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2124321

極紫外光刻：市場佔有率分析、產業趨勢與統計及成長預測（2026-2031）

Extreme Ultraviolet Lithography - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2026 - 2031)
出版日期: | 出版商: Mordor Intelligence | 英文 120 Pages | 商品交期: 2-3個工作天內

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簡介目錄

根據Mordor Intelligence預測，極紫外光刻市場規模預估在2026年達到259.3億美元，高於2025年的237.1億美元。預計到2031年，該市場規模將達到405.4億美元，2026年至2031年的複合年成長率為9.35%。

極紫外光刻市場-IMG1

本報告按產品類型（光源、反射鏡及光學元件、其他）、終端用戶類型（代工廠、垂直整合裝置製造商 (IDM)）、技術節點（7nm 及以上、5nm、其他）、光源技術（雷射等離子體、氣體放電等離子體、其他）和地區（北美、歐洲、其他）進行細分。市場預測以美元 (USD) 為單位。

全球極紫外線（EUV）微影市場趨勢與洞察

對小於5奈米製程節點的需求

計畫於2025年開始量產的2nm晶片需要極窄的線寬，而這只有透過EUV光刻技術才能實現。台積電已為其EUV設備累計123億美元，目標是與3nm設計相比，速度提升10-15%或功耗降低25-30%。智慧型手機和資料中心晶片的採購商已經下了訂單，使得供應商的訂單訂單量達到了數年之久。因此，隨著製程節點的不斷縮小，EUV微影市場的出貨量也趨於穩定。

加速擴大人工智慧/5G/高效能運算應用領域的產能。

人工智慧加速器、5G基頻半導體和高頻寬記憶體都需要細間距金屬化技術。台積電2024年第四季營收達268.8億美元，年增37%，充分展現了市場需求的規模。為滿足此需求，台積電已累計320億至360億美元用於2025年的資本支出，其中包括約60台極紫外光刻機。此類訂單將縮短設備前置作業時間，使小規模光阻供應商（如光阻膜、掩模坯和抗蝕劑）也能搭上極紫外光刻市場成長的順風車。

系統成本超過 1.5 億美元，晶圓廠維修非常複雜。

一台標準的EUV掃描儀的價格約為1.5億美元，但高數值孔徑（NA）型號的價格是其兩倍以上。此外，製造商還需要升級無塵室的氣流系統、振動抑制裝置和電源線。中小型代工廠難以攤銷這些費用，這可能導致技術差距擴大，最終導致EUV光刻市場潛在客戶群的萎縮。而運作DUV和EUV的雙通道系統則進一步增加了資本投資預算。

細分市場分析

預計到2025年，光源將佔極紫外光刻市場規模的45.85%，鞏固了其作為掃描儀中最昂貴子系統的地位。目前的雷射等離子體（LPP）模組將二氧化碳雷射脈衝和錫液滴轉換為13.5nm波長的光，但轉換效率仍低於5%，因此人們仍在不斷研究自由電子系統等替代技術。高平均輸出功率也推動了先進收集鏡鍍膜和碎屑過濾器等升級，而保證輸出穩定性的服務合約則為供應商提供了持續的收入。

薄膜是成長最快的產品，預計到2031年複合年成長率將達到17.9% 。奈米碳管（CNT）薄膜的透光率目前已達到97-98%，並能承受1000瓦的輻照，這相比傳統的氮化矽薄膜而言是一項重大突破。主要代工廠已批准在2奈米製程中使用CNT薄膜，從而啟動了所有掩模層都需要保護的更換週期。由於規模擴大，單位成本已經開始下降。

由於晶圓代工廠依賴契約製造，預計到2025年，它們將佔據EUV微影市場52.75%的佔有率。專業化使得晶圓代工廠能夠大量訂購掃描儀，確保服務能力，並與設備供應商共同開發製程。光是台積電一家就擁有56%的EUV曝光產能，其在台灣的集中佈局正透過學習曲線提升供應鏈效率並降低成本。

同時，垂直整合半導體製造商（IDM）正以13.6%的複合年成長率快速擴張。英特爾的「IDM 2.0」模式向外部客戶開放其晶圓廠，同時增加了高數值孔徑（NA）產能，並確保其產能持續到2025年。補貼降低了實際資本成本，縮小了與純晶圓代工企業的單位成本差距。隨著IDM向環柵（GAA）電晶體轉型，它們將把設計和製程回饋迴路納入內部，預計這一優勢將在未來十年內提升IDM在極紫外光刻（EUV）市場的佔有率。

區域分析

預計亞太地區將成為EUV光刻市場的主要驅動力，到2025年將佔全球銷售額的63.85%。光是在台灣，台積電就已部署了約60台掃描器，這些掃描器由前述123億美元的EUV預算資金籌措。三星位於韓國的晶圓廠計劃於2025年第一季開始運作其首台高數值孔徑（High-NA）系統。日本供應商，例如HOYA，仍然是EUV光刻掩模坯的主要來源，進一步加劇了區域集中度。

北美地區的創新動能正日益強勁。根據《晶片創新與創新法案》（CHIPS Act），奧爾巴尼的極紫外光刻加速器計畫已獲得8.25億美元的撥款，英特爾的高數值孔徑（NA）設備部署也得益於其提前使用所有第一代掃描器。此外，美國能源部也津貼勞倫斯·利弗莫爾國家實驗室進行下一代光源研究，該地區正逐步成為創新中心。

中東和非洲地區雖然基數較小，但預計到2031年將以10.9%的複合年成長率成長。阿拉伯聯合大公國和沙烏地阿拉伯等國的政府資金正在投資人工智慧基礎設施，而這些基礎設施未來將需要先進的晶片供應。目前，該地區已與美國設備供應商簽署了早期合作備忘錄，內容包括試點晶圓廠和無塵室的設計。隨著生態系的成熟，採用極紫外光刻（EUV）技術的道路可望更加暢通。

其他好處

  • Excel格式的市場預測（ME）表
  • 3個月的分析師支持

目錄

第1章：引言

  • 研究假設和市場定義
  • 調查範圍

第2章：調查方法

第3章執行摘要

第4章 市場狀況

  • 市場概覽
  • 市場促進因素
    • 對小於 5nm 的邏輯和記憶體節點的需求 <5nm 邏輯和記憶體節點
    • 加速擴大人工智慧、5G 和高效能運算的產能。
    • 政府資助的半導體補貼計劃
    • 過渡到高數值孔徑（0.55 NA）EUV平台
    • 由於薄膜技術的突破，生產效率得到了顯著提高。
    • 利用ERLs進行緊湊型EUV光源的研究開發進展
  • 市場限制因素
    • 系統成本超過 1.5 億美元，晶圓廠維修非常複雜。
    • 對單一供應商的依賴與供應鏈瓶頸
    • EUV光阻劑的隨機缺陷率
    • 缺乏接受EUV訓練的現場服務工程師
  • 價值鏈分析
  • 監理情勢
  • 技術展望
  • 波特五力分析
  • 宏觀經濟因素影響評估

第5章 市場規模與成長預測

  • 依產品類型
    • 光源
    • 鏡面和光學系統
    • 面具
    • 薄膜
    • 口罩空白
  • 按最終用戶類型
    • 鑄造廠
    • 垂直整合設備製造商（IDM）
  • 依技術節點
    • 7奈米或以上
    • 5nm
    • 3nm
    • 2奈米或更小
  • 透過光源技術
    • 雷射等離子體（LPP）
    • 氣體放電等離子體
    • 真空火花
    • ERL-EUV
  • 按地區
    • 北美洲
      • 美國
      • 加拿大
    • 南美洲
      • 巴西
      • 其他南美國家
    • 歐洲
      • 德國
      • 荷蘭
      • 英國
      • 法國
      • 義大利
      • 俄羅斯
      • 其他歐洲國家
    • 亞太地區
      • 台灣
      • 韓國
      • 日本
      • 中國
      • 新加坡
      • 其他亞太國家
    • 中東和非洲
      • 中東
        • GCC
        • 土耳其
        • 沙烏地阿拉伯
        • 其他中東國家
      • 非洲
        • 南非
        • 其他非洲地區

第6章 競爭情勢

  • 市場集中度
  • 策略趨勢
  • 市佔率分析
  • 公司簡介
    • ASML Holding NV
    • Canon Inc.
    • Nikon Corporation
    • ZEISS SMT
    • Ushio Inc.
    • Gigaphoton Inc.
    • Cymer LLC
    • Toppan Photomasks Inc.
    • Hoya Corporation
    • AGC Inc.
    • Shin-Etsu Chemical Co.
    • JSR Corp.
    • Tokyo Ohka Kogyo（TOK）
    • DuPont de Nemours Inc.
    • Carl Zeiss High-NA Systems
    • Eulitha AG
    • Heidelberg Instruments Mikrotechnik GmbH
    • KLA Corporation
    • Applied Materials Inc.
    • Lam Research Corp.
    • Hitachi High-Tech Corp.
    • Inpria Corporation
    • JEOL Ltd.
    • Veeco Instruments Inc.
    • Onto Innovation Inc.

第7章 市場機會與未來展望

簡介目錄
Product Code: 70357

According to Mordor Intelligence, the extreme ultraviolet lithography market size in 2026 is estimated at USD 25.93 billion, growing from the 2025 value of USD 23.71 billion, with 2031 projections showing USD 40.54 billion, growing at a 9.35% CAGR over 2026-2031.

Extreme Ultraviolet Lithography - Market - IMG1

This report is Segmented by Product Type (Light Sources, Mirrors / Optics, and More), End-User Type (Foundries, and Integrated Device Manufacturers (IDMs)), Technology Node (7 Nm and Above, 5 Nm, and More), Light-Source Technology (Laser-Produced Plasma, Gas-Discharge Plasma, and More), and Geography (North America, Europe and More). The Market Forecasts are Provided in Terms of Value (USD).

Global Extreme Ultraviolet Lithography Market Trends and Insights

Demand for Sub-5 nm Nodes

Mass-production plans for 2 nm chips scheduled for 2025 call for line widths that only EUV exposure can achieve. TSMC has set aside USD 12.3 billion for its EUV tool fleet, a budget that targets 10-15% speed gains or 25-30% power cuts versus 3 nm designs. Smartphone and data-center chip buyers have already queued for those nodes, allowing equipment vendors to lock in multi-year backlogs. As a result, the EUV lithography market enjoys a predictable shipment pipeline that mirrors each successive node shrink.

Accelerated AI/5G/HPC Capacity Build-out

AI accelerators, 5G base-band silicon, and high-bandwidth memory all need tight pitch metallization. TSMC's Q4 2024 revenue rose 37% year-on-year to USD 26.88 billion, illustrating the scale of demand. To keep pace, the company budgeted USD 32-36 billion for capex in 2025, including roughly 60 EUV scanners. Such orders shorten tool lead times and bring smaller suppliers-pellicle, mask blank, and resist vendors-into the growth loop of the EUV lithography market.

USD 150 m+ System Cost and Fab Retrofit Complexity

Baseline EUV scanners list at roughly USD 150 million, and high-NA units more than double that figure. Fabs also upgrade clean-room airflow, vibration damping, and power distribution. Smaller foundries struggle to amortize such outlays, risking a technology gap that narrows potential customers for the EUV lithography market. Dual-lane operations, where DUV and EUV run in parallel, further enlarge capital budgets.

Other drivers and restraints analyzed in the detailed report include:

  1. Government Semiconductor Subsidy Programs
  2. Transition to High-NA EUV Platforms
  3. Single-Vendor Dependency and Supply-Chain Bottlenecks

For complete list of drivers and restraints, kindly check the Table Of Contents.

Segment Analysis

Light sources accounted for 45.85% of the EUV lithography market size in 2025, underscoring their status as the most expensive subsystem in a scanner. Current laser-produced-plasma (LPP) modules convert CO2-laser pulses and tin droplets into 13.5 nm radiation, but sub-5% conversion efficiency continues to spur research into free-electron alternatives. High average power also drives upgrades such as advanced collector-mirror coatings and debris filters, with service contracts that guarantee power stability, adding annuity revenue for suppliers.

Pellicles are the fastest-growing product, with an 17.9% CAGR projected through 2031. Carbon-nanotube membranes now deliver 97-98% transmittance and withstand 1,000 W exposure, a step change from earlier silicon-nitride films. Major foundries have cleared CNT pellicles for 2 nm process flows, opening a replacement cycle in which every mask layer needs protection; rising scale is already trimming unit cost.

Foundries accounted for 52.75% of the EUV lithography market in 2025 because fab-less customers rely on contract manufacturing. Their specialization lets them order scanners in batches, lock in service capacity, and co-develop processes with tool suppliers. TSMC alone controlled 56% of installed EUV exposure capacity, translating geographic clustering in Taiwan into supply-chain efficiencies and learning-curve cost reductions.

IDMs, however, are expanding faster at a 13.6% CAGR. Intel's IDM 2.0 model reopens its fabs to external clients while adding High-NA capacity reserved through 2025. Subsidy grants lower its effective capital cost, narrowing the unit-cost gap with pure-play foundries. As IDMs upgrade to gate-all-around transistors, they internalize design-process feedback loops, an advantage that should lift their share of the EUV lithography market over the decade.

Complete Report Scope:

  • By Product Type
    • Light Sources
    • Mirrors / Optics
    • Masks
    • Pellicles
    • Mask Blanks
  • By End-User Type
    • Foundries
    • Integrated Device Manufacturers (IDMs)
  • By Technology Node
    • 7 nm and above
    • 5 nm
    • 3 nm
    • 2 nm and below
  • By Light-Source Technology
    • Laser-Produced Plasma (LPP)
    • Gas-Discharge Plasma
    • Vacuum Spark
    • ERL-EUV
  • By Geography
    • North America
      • United States
      • Canada
    • South America
      • Brazil
      • Rest of South America
    • Europe
      • Germany
      • Netherlands
      • United Kingdom
      • France
      • Italy
      • Russia
      • Rest of Europe
    • Asia-Pacific
      • Taiwan
      • South Korea
      • Japan
      • China
      • Singapore
      • Rest of Asia-Pacific
    • Middle East and Africa
      • Middle East
        • GCC
        • Turkey
        • Saudi Arabia
        • Rest of Middle East
      • Africa
        • South Africa
        • Rest of Africa

Geography Analysis

Asia-Pacific led the EUV lithography market with 63.85% of 2025 revenue. Taiwan's TSMC alone has installed roughly 60 scanners financed by the USD 12.3 billion EUV budget noted above. Samsung's Korean fabs will bring their first High-NA tool online in Q1 2025. Japanese suppliers such as Hoya remain the primary source of EUV mask blanks, further reinforcing regional clustering.

North America is gaining momentum. The CHIPS Act earmarks USD 825 million for an EUV Accelerator in Albany, while Intel's High-NA roll-out benefits from early access to all first-wave scanners. Department of Energy grants fund next-generation light-source research at Lawrence Livermore National Laboratory, positioning the region as an innovation hub.

The Middle East and Africa region, although starting from a small base, is forecast to grow at an 10.9% CAGR to 2031 as sovereign wealth funds in the UAE and Saudi Arabia invest in AI infrastructure that will ultimately require advanced chip supply. Early memoranda with U.S. tool vendors cover pilot fabs and clean-room engineering, leaving open a path to EUV adoption once ecosystems mature.

  1. ASML Holding N.V.
  2. Canon Inc.
  3. Nikon Corporation
  4. ZEISS SMT
  5. Ushio Inc.
  6. Gigaphoton Inc.
  7. Cymer LLC
  8. Toppan Photomasks Inc.
  9. Hoya Corporation
  10. AGC Inc.
  11. Shin-Etsu Chemical Co.
  12. JSR Corp.
  13. Tokyo Ohka Kogyo (TOK)
  14. DuPont de Nemours Inc.
  15. Carl Zeiss High-NA Systems
  16. Eulitha AG
  17. Heidelberg Instruments Mikrotechnik GmbH
  18. KLA Corporation
  19. Applied Materials Inc.
  20. Lam Research Corp.
  21. Hitachi High-Tech Corp.
  22. Inpria Corporation
  23. JEOL Ltd.
  24. Veeco Instruments Inc.
  25. Onto Innovation Inc.

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Assumptions and Market Definition
  • 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE

  • 4.1 Market Overview
  • 4.2 Market Drivers
    • 4.2.1 Demand for < 5 nm logic and memory nodes
    • 4.2.2 Accelerated AI/5G/HPC capacity build-out
    • 4.2.3 Government semiconductor subsidy programs
    • 4.2.4 Transition to High-NA (0.55 NA) EUV platforms
    • 4.2.5 Productivity leap from pellicle membrane breakthroughs
    • 4.2.6 ERL-based compact EUV light-source R&D momentum
  • 4.3 Market Restraints
    • 4.3.1 USD 150 m+ system cost and fab retrofit complexity
    • 4.3.2 Single-vendor dependency and supply-chain bottlenecks
    • 4.3.3 Stochastic defectivity of EUV photo-resists
    • 4.3.4 Scarcity of EUV-trained field service engineers
  • 4.4 Value Chain Analysis
  • 4.5 Regulatory Landscape
  • 4.6 Technological Outlook
  • 4.7 Porter's Five Forces Analysis
    • 4.7.1 Bargaining Power of Suppliers
    • 4.7.2 Bargaining Power of Buyers
    • 4.7.3 Threat of New Entrants
    • 4.7.4 Threat of Substitutes
    • 4.7.5 Intensity of Competitive Rivalry
  • 4.8 Assessment of the Impact of Macroeconomic Factors

5 MARKET SIZE AND GROWTH FORECASTS (VALUE)

  • 5.1 By Product Type
    • 5.1.1 Light Sources
    • 5.1.2 Mirrors / Optics
    • 5.1.3 Masks
    • 5.1.4 Pellicles
    • 5.1.5 Mask Blanks
  • 5.2 By End-User Type
    • 5.2.1 Foundries
    • 5.2.2 Integrated Device Manufacturers (IDMs)
  • 5.3 By Technology Node
    • 5.3.1 7 nm and above
    • 5.3.2 5 nm
    • 5.3.3 3 nm
    • 5.3.4 2 nm and below
  • 5.4 By Light-Source Technology
    • 5.4.1 Laser-Produced Plasma (LPP)
    • 5.4.2 Gas-Discharge Plasma
    • 5.4.3 Vacuum Spark
    • 5.4.4 ERL-EUV
  • 5.5 By Geography
    • 5.5.1 North America
      • 5.5.1.1 United States
      • 5.5.1.2 Canada
    • 5.5.2 South America
      • 5.5.2.1 Brazil
      • 5.5.2.2 Rest of South America
    • 5.5.3 Europe
      • 5.5.3.1 Germany
      • 5.5.3.2 Netherlands
      • 5.5.3.3 United Kingdom
      • 5.5.3.4 France
      • 5.5.3.5 Italy
      • 5.5.3.6 Russia
      • 5.5.3.7 Rest of Europe
    • 5.5.4 Asia-Pacific
      • 5.5.4.1 Taiwan
      • 5.5.4.2 South Korea
      • 5.5.4.3 Japan
      • 5.5.4.4 China
      • 5.5.4.5 Singapore
      • 5.5.4.6 Rest of Asia-Pacific
    • 5.5.5 Middle East and Africa
      • 5.5.5.1 Middle East
        • 5.5.5.1.1 GCC
        • 5.5.5.1.2 Turkey
        • 5.5.5.1.3 Saudi Arabia
        • 5.5.5.1.4 Rest of Middle East
      • 5.5.5.2 Africa
        • 5.5.5.2.1 South Africa
        • 5.5.5.2.2 Rest of Africa

6 COMPETITIVE LANDSCAPE

  • 6.1 Market Concentration
  • 6.2 Strategic Moves
  • 6.3 Market Share Analysis
  • 6.4 Company Profiles (includes Global level Overview, Market level overview, Core Segments, Financials as available, Strategic Information, Market Rank/Share, Products and Services, Recent Developments)
    • 6.4.1 ASML Holding N.V.
    • 6.4.2 Canon Inc.
    • 6.4.3 Nikon Corporation
    • 6.4.4 ZEISS SMT
    • 6.4.5 Ushio Inc.
    • 6.4.6 Gigaphoton Inc.
    • 6.4.7 Cymer LLC
    • 6.4.8 Toppan Photomasks Inc.
    • 6.4.9 Hoya Corporation
    • 6.4.10 AGC Inc.
    • 6.4.11 Shin-Etsu Chemical Co.
    • 6.4.12 JSR Corp.
    • 6.4.13 Tokyo Ohka Kogyo (TOK)
    • 6.4.14 DuPont de Nemours Inc.
    • 6.4.15 Carl Zeiss High-NA Systems
    • 6.4.16 Eulitha AG
    • 6.4.17 Heidelberg Instruments Mikrotechnik GmbH
    • 6.4.18 KLA Corporation
    • 6.4.19 Applied Materials Inc.
    • 6.4.20 Lam Research Corp.
    • 6.4.21 Hitachi High-Tech Corp.
    • 6.4.22 Inpria Corporation
    • 6.4.23 JEOL Ltd.
    • 6.4.24 Veeco Instruments Inc.
    • 6.4.25 Onto Innovation Inc.

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK

  • 7.1 White-space and Unmet-need Assessment