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1755921

2032 年 RF GaN 市場預測：按材料類型、裝置類型、晶圓尺寸、應用、最終用戶和地區進行的全球分析

RF GaN Market Forecasts to 2032 - Global Analysis By Material Type (GaN-on-SiC, GaN-on-Silicon, GaN-on-Diamond and Other Materials), Device Type, Wafer Size, Application, End User and By Geography
出版日期: | 出版商: Stratistics Market Research Consulting | 英文 200+ Pages | 商品交期: 2-3個工作天內

價格

根據 Stratistics MRC 的數據，全球 RF GaN 市場預計在 2025 年達到 17 億美元，到 2032 年將達到 72 億美元，預測期內的複合年成長率為 22.2%。

「射頻 GaN」指的是氮化鎵半導體在射頻環境中的應用。射頻 GaN 以其高電壓、高功率密度和高效率而聞名，可實現衛星通訊、雷達系統和無線基礎設施中緊湊、高效的組件。 GaN 的溫度和頻率性能優於矽和砷化鎵等傳統材料，使其成為高頻、高功率射頻裝置的理想選擇。

根據普華永道報告，預計2030年5G技術將為全球GDP貢獻1.3兆美元。

雷達和電子戰系統的需求不斷增加

雷達和電子戰系統日益成長的需求是射頻 GaN 市場的關鍵驅動力。這些應用需要高頻、高功率和高效率的組件，而 GaN 正是這些組件的優勢所在。全球國防系統的現代化，尤其是先進雷達和電子戰能力的整合，正在加速射頻 GaN 裝置的普及。基於 GaN 的解決方案卓越的功率密度和熱性能對於下一代軍事和航太平台至關重要，從而推動了市場的強勁成長。

溫度控管挑戰

GaN元件在高功率密度和高頻率下工作，會產生大量熱量，如果無法有效散熱，可能會損害裝置的可靠性和壽命。此外，將GaN整合到緊湊的高性能系統中會加劇這些挑戰，需要先進的冷卻解決方案和創新的封裝技術。這些額外的複雜性增加了開發成本和上市時間，可能會限制其廣泛應用，尤其是在成本敏感的應用中。

與基於人工智慧的防禦系統整合

將先進的人工智慧演算法與高頻、高功率的氮化鎵元件結合，將實現現代國防平台的即時資料處理、自適應訊號管理和增強型威脅偵測。此外，人工智慧與氮化鎵的協同效應將增強雷達、電子戰和通訊系統的效能，為更智慧、更自主的軍事行動鋪路。預計這種融合將刺激該領域的大量投資和創新。

GaN晶圓與基板供應鏈中斷

GaN晶圓和基板供應鏈中斷對射頻GaN市場構成重大威脅。依賴有限數量的高品質GaN材料供應商，使製造商面臨地緣政治緊張局勢、自然災害和物流瓶頸等風險。此外，碳化矽(SiC)和高純度GaN等關鍵基板的供應中斷可能導致生產延遲、成本上升和需求無法滿足。

COVID-19的影響：

新冠疫情最初擾亂了射頻氮化鎵市場，因為供應鏈中斷和終端產業需求下降。然而，這場危機加速了數位化、遠端辦公和通訊基礎設施的擴張，從而推動了對高效能射頻組件的需求。隨著產業適應和監管放鬆，通訊、國防和消費電子等領域恢復了成長勢頭，帶動了射頻氮化鎵市場快速復甦和成長。

預計在預測期內，GaN-on-SiC 部分將成為最大的部分。

預計在預測期內，GaN-on-SiC領域將佔據最大的市場佔有率，因為GaN-on-SiC裝置卓越的導熱性、效率和功率處理能力對於高效能射頻應用至關重要。此外，它們能夠在高功率密度和高頻率下可靠運行，使其成為通訊、國防和航太等高要求領域的首選。製造流程和成本效率的持續進步進一步鞏固了該領域的市場領先地位。

預計通訊業在預測期內將實現最高複合年成長率

預計通訊業將在預測期內實現最高成長率。 5G 網路的快速部署和高速資料通訊的激增，正在推動射頻 GaN 裝置在該領域的應用。此外，GaN 技術固有的優勢（例如高功率密度、高效率和高頻寬）能夠增強基地台和基礎設施的訊號完整性和網路效能。隨著全球對先進無線連接的需求不斷成長，預計通訊行業的市場擴張速度將繼續超過其他應用領域。

佔比最大的地區：

預計北美將在預測期內佔據最大市場佔有率，這得益於該地區先進的國防基礎設施、5G技術的早期採用以及在研發方面的大量投資。此外，主要半導體製造商的存在以及政府對先進通訊和國防能力的大力支持進一步鞏固了北美的主導地位。

複合年成長率最高的地區：

預計亞太地區在預測期內將實現最高的複合年成長率。該地區快速的工業化、快速發展的通訊基礎設施以及強大的製造能力，正在推動對射頻 GaN 裝置的巨大需求。此外，中國、日本和韓國等國家在先進半導體技術的採用和生產方面處於領先地位。政府支持國內製造業和技術創新的舉措將進一步推動市場成長。

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目錄

第1章執行摘要

第2章 前言

  • 概述
  • 相關利益者
  • 研究範圍
  • 調查方法
    • 資料探勘
    • 數據分析
    • 數據檢驗
    • 研究途徑
  • 研究材料

第3章市場走勢分析

  • 驅動程式
  • 限制因素
  • 機會
  • 威脅
  • 應用分析
  • 最終用戶分析
  • 新興市場
  • COVID-19的影響

第4章 波特五力分析

  • 供應商的議價能力
  • 買家的議價能力
  • 替代品的威脅
  • 新進入者的威脅
  • 競爭對手之間的競爭

5. 全球RF GaN市場（依材料類型）

  • GaN-on-SiC
  • 矽基氮化鎵
  • 鑽石基氮化鎵
  • 其他材料類型

6.全球RF GaN 市場（以設備類型）

  • 分立元件
  • 整合設備（MMIC）

7. 全球RF GaN市場（依晶圓尺寸）

  • 小於150毫米
  • 150毫米或以上

8. 全球RF GaN市場（按應用）

  • 無線基礎設施
  • 雷達系統
  • 衛星通訊
  • 測試與測量設備
  • 電子戰
  • 射頻能量
  • 其他用途

第9章全球RF GaN 市場（按最終用戶）

  • 航太和國防
  • 通訊
  • 車
  • 衛生保健
  • 產業
  • 其他最終用戶

第10章全球RF GaN 市場（按地區）

  • 北美洲
    • 美國
    • 加拿大
    • 墨西哥
  • 歐洲
    • 德國
    • 英國
    • 義大利
    • 法國
    • 西班牙
    • 其他歐洲國家
  • 亞太地區
    • 日本
    • 中國
    • 印度
    • 澳洲
    • 紐西蘭
    • 韓國
    • 其他亞太地區
  • 南美洲
    • 阿根廷
    • 巴西
    • 智利
    • 南美洲其他地區
  • 中東和非洲
    • 沙烏地阿拉伯
    • 阿拉伯聯合大公國
    • 卡達
    • 南非
    • 其他中東和非洲地區

第11章 重大進展

  • 協議、夥伴關係、合作和合資企業
  • 收購與合併
  • 新產品發布
  • 業務擴展
  • 其他關鍵策略

第12章 公司概況

  • Cree, Inc.（Wolfspeed）
  • Qorvo, Inc.
  • Skyworks Solutions, Inc.
  • Infineon Technologies AG
  • MACOM Technology Solutions Holdings, Inc.
  • NXP Semiconductors NV
  • STMicroelectronics NV
  • Mitsubishi Electric Corporation
  • Analog Devices, Inc.
  • Panasonic Corporation
  • Texas Instruments Incorporated
  • Toshiba Corporation
  • Sumitomo Electric Industries, Ltd.
  • GaN Systems Inc.
  • Analogic Corporation
  • United Monolithic Semiconductors（UMS）
  • Transphorm, Inc.
Product Code: SMRC29815

According to Stratistics MRC, the Global RF GaN Market is accounted for $1.7 billion in 2025 and is expected to reach $7.2 billion by 2032 growing at a CAGR of 22.2% during the forecast period. "RF GaN" describes the utilization of gallium nitride semiconductors in radio frequency settings. Compact, high-performance components in satellite communications, radar systems, and wireless infrastructure are made possible by RF GaN, which is well-known for its high breakdown voltage, power density, and efficiency. GaN provides better temperature and frequency performance than conventional materials like silicon or GaAs, which makes it perfect for high-frequency, high-power radio frequency devices.

According to a PwC report, 5G technology is expected to contribute $1.3 trillion to global GDP by 2030.

Market Dynamics:

Driver:

Rising demand in radar and electronic warfare systems

The escalating demand for radar and electronic warfare systems is a pivotal driver for the RF GaN market. These applications require high-frequency, high-power, and high-efficiency components attributes where GaN excels. The modernization of defense systems globally, especially with the integration of advanced radar and electronic warfare capabilities, has accelerated the adoption of RF GaN devices. The superior power density and thermal performance of GaN-based solutions make them indispensable for next-generation military and aerospace platforms, fueling robust market growth.

Restraint:

Thermal management challenges

GaN devices operate at higher power densities and frequencies, they generate substantial heat, which can compromise reliability and device lifespan if not effectively dissipated. Moreover, the integration of GaN in compact, high-performance systems intensifies these challenges, necessitating advanced cooling solutions and innovative packaging techniques. These added complexities increase both development costs and time to market, potentially limiting broader adoption, especially in cost-sensitive applications.

Opportunity:

Integration with AI-based defense systems

Advanced AI algorithms, when combined with high-frequency, high-power GaN devices, enable real-time data processing, adaptive signal management, and enhanced threat detection in modern defense platforms. Additionally, the synergy between AI and GaN amplifies the effectiveness of radar, electronic warfare, and communication systems, paving the way for smarter, more autonomous military operations. This convergence is expected to drive significant investments and innovation in the sector.

Threat:

Supply chain disruptions for GaN wafers and substrates

Supply chain disruptions for GaN wafers and substrates pose a considerable threat to the RF GaN market. The reliance on a limited number of suppliers for high-quality GaN materials exposes manufacturers to risks such as geopolitical tensions, natural disasters, and logistical bottlenecks. Furthermore, any interruption in the supply of critical substrates like silicon carbide (SiC) or high-purity GaN can lead to production delays, increased costs, and unmet demand.

Covid-19 Impact:

The COVID-19 pandemic initially disrupted the RF GaN market due to supply chain interruptions and reduced demand from end-use industries. However, the crisis accelerated digitalization, remote work, and the expansion of telecommunications infrastructure, which in turn boosted demand for high-performance RF components. As industries adapted and restrictions eased, sectors such as telecommunications, defense, and consumer electronics regained momentum, leading to a swift recovery and renewed growth in the RF GaN market.

The GaN-on-SiC segment is expected to be the largest during the forecast period

The GaN-on-SiC segment is expected to account for the largest market share during the forecast period due to the superior thermal conductivity, efficiency, and power handling capabilities of GaN-on-SiC devices, which are crucial for high-performance RF applications. Moreover, their ability to operate reliably at elevated power densities and frequencies makes them the preferred choice for demanding sectors such as telecommunications, defense, and aerospace. Continuous advancements in fabrication processes and cost-effectiveness further reinforce the segment's leadership in the market.

The telecommunications segment is expected to have the highest CAGR during the forecast period

Over the forecast period, the telecommunications segment is predicted to witness the highest growth rate. The rapid rollout of 5G networks and the surge in high-speed data communication are driving the adoption of RF GaN devices in this sector. Furthermore, GaN technology's inherent advantages, such as high power density, efficiency, and wide bandwidth, enable enhanced signal integrity and network performance in base stations and infrastructure. As global demand for advanced wireless connectivity rises, the telecommunications segment will continue to outpace other applications in market expansion.

Region with largest share:

During the forecast period, the North America region is expected to hold the largest market share, fueled by the region's advanced defense infrastructure, early adoption of 5G technologies, and significant investments in research and development. Additionally, the presence of major semiconductor manufacturers and robust government support for advanced communications and defense capabilities further consolidate North America's dominant position.

Region with highest CAGR:

Over the forecast period, the Asia Pacific region is anticipated to exhibit the highest CAGR. The region's rapid industrialization, burgeoning telecommunications infrastructure, and strong manufacturing capabilities drive exceptional demand for RF GaN devices. Moreover, countries such as China, Japan, and South Korea are leading in both the adoption and production of advanced semiconductor technologies. Government initiatives supporting domestic manufacturing and technological innovation further accelerate market growth.

Key players in the market

Some of the key players in RF GaN Market include Cree, Inc. (Wolfspeed), Qorvo, Inc., Skyworks Solutions, Inc., Infineon Technologies AG, MACOM Technology Solutions Holdings, Inc., NXP Semiconductors N.V., STMicroelectronics N.V., Mitsubishi Electric Corporation, Analog Devices, Inc., Panasonic Corporation, Texas Instruments Incorporated, Toshiba Corporation, Sumitomo Electric Industries, Ltd., GaN Systems Inc., Analogic Corporation, United Monolithic Semiconductors (UMS), and Transphorm, Inc.

Key Developments:

In March 2025 - At SATELLITE 2025, MACOM showcased new high power C Band, Q Band, and Ka Band GaN MMIC PAs using PURE CARBIDE(TM) GaN technology, supporting 125 W and above with improved efficiency.

In January 2025, Infineon Technologies AG a leader in power, automotive and IoT semiconductors announced the formation of a new business unit to drive the company's growth in the area of sensors by combining the existing Sensor and Radio Frequency (RF) businesses into one dedicated organization. The new business unit SURF (Sensor Units & Radio Frequency) will be part of the Power & Sensor Systems (PSS) division and include the former Automotive and Multi-market Sense & Control businesses.

Material Types Covered:

  • GaN-on-SiC
  • GaN-on-Silicon
  • GaN-on-Diamond
  • Other Material Types

Device Types Covered:

  • Discrete Devices
  • Integrated Devices (MMICs)

Wafer Sizes Covered:

  • <150 mm
  • 150 mm and Larger

Applications Covered:

  • Wireless Infrastructure
  • Radar Systems
  • Satellite Communication
  • Test & Measurement Equipment
  • Electronic Warfare
  • RF energy
  • Other Applications

End Users Covered:

  • Aerospace & Defense
  • Telecommunications
  • Automotive
  • Healthcare
  • Industrial
  • Other End Users

Regions Covered:

  • North America
    • US
    • Canada
    • Mexico
  • Europe
    • Germany
    • UK
    • Italy
    • France
    • Spain
    • Rest of Europe
  • Asia Pacific
    • Japan
    • China
    • India
    • Australia
    • New Zealand
    • South Korea
    • Rest of Asia Pacific
  • South America
    • Argentina
    • Brazil
    • Chile
    • Rest of South America
  • Middle East & Africa
    • Saudi Arabia
    • UAE
    • Qatar
    • South Africa
    • Rest of Middle East & Africa

What our report offers:

  • Market share assessments for the regional and country-level segments
  • Strategic recommendations for the new entrants
  • Covers Market data for the years 2024, 2025, 2026, 2028, and 2032
  • Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations)
  • Strategic recommendations in key business segments based on the market estimations
  • Competitive landscaping mapping the key common trends
  • Company profiling with detailed strategies, financials, and recent developments
  • Supply chain trends mapping the latest technological advancements

Free Customization Offerings:

All the customers of this report will be entitled to receive one of the following free customization options:

  • Company Profiling
    • Comprehensive profiling of additional market players (up to 3)
    • SWOT Analysis of key players (up to 3)
  • Regional Segmentation
    • Market estimations, Forecasts and CAGR of any prominent country as per the client's interest (Note: Depends on feasibility check)
  • Competitive Benchmarking
    • Benchmarking of key players based on product portfolio, geographical presence, and strategic alliances

Table of Contents

1 Executive Summary

2 Preface

  • 2.1 Abstract
  • 2.2 Stake Holders
  • 2.3 Research Scope
  • 2.4 Research Methodology
    • 2.4.1 Data Mining
    • 2.4.2 Data Analysis
    • 2.4.3 Data Validation
    • 2.4.4 Research Approach
  • 2.5 Research Sources
    • 2.5.1 Primary Research Sources
    • 2.5.2 Secondary Research Sources
    • 2.5.3 Assumptions

3 Market Trend Analysis

  • 3.1 Introduction
  • 3.2 Drivers
  • 3.3 Restraints
  • 3.4 Opportunities
  • 3.5 Threats
  • 3.6 Application Analysis
  • 3.7 End User Analysis
  • 3.8 Emerging Markets
  • 3.9 Impact of Covid-19

4 Porters Five Force Analysis

  • 4.1 Bargaining power of suppliers
  • 4.2 Bargaining power of buyers
  • 4.3 Threat of substitutes
  • 4.4 Threat of new entrants
  • 4.5 Competitive rivalry

5 Global RF GaN Market, By Material Type

  • 5.1 Introduction
  • 5.2 GaN-on-SiC
  • 5.3 GaN-on-Silicon
  • 5.4 GaN-on-Diamond
  • 5.5 Other Material Types

6 Global RF GaN Market, By Device Type

  • 6.1 Introduction
  • 6.2 Discrete Devices
  • 6.3 Integrated Devices (MMICs)

7 Global RF GaN Market, By Wafer Size

  • 7.1 Introduction
  • 7.2 <150 mm
  • 7.3 150 mm and Larger

8 Global RF GaN Market, By Application

  • 8.1 Introduction
  • 8.2 Wireless Infrastructure
  • 8.3 Radar Systems
  • 8.4 Satellite Communication
  • 8.5 Test & Measurement Equipment
  • 8.6 Electronic Warfare
  • 8.7 RF energy
  • 8.8 Other Applications

9 Global RF GaN Market, By End User

  • 9.1 Introduction
  • 9.2 Aerospace & Defense
  • 9.3 Telecommunications
  • 9.4 Automotive
  • 9.5 Healthcare
  • 9.6 Industrial
  • 9.7 Other End Users

10 Global RF GaN Market, By Geography

  • 10.1 Introduction
  • 10.2 North America
    • 10.2.1 US
    • 10.2.2 Canada
    • 10.2.3 Mexico
  • 10.3 Europe
    • 10.3.1 Germany
    • 10.3.2 UK
    • 10.3.3 Italy
    • 10.3.4 France
    • 10.3.5 Spain
    • 10.3.6 Rest of Europe
  • 10.4 Asia Pacific
    • 10.4.1 Japan
    • 10.4.2 China
    • 10.4.3 India
    • 10.4.4 Australia
    • 10.4.5 New Zealand
    • 10.4.6 South Korea
    • 10.4.7 Rest of Asia Pacific
  • 10.5 South America
    • 10.5.1 Argentina
    • 10.5.2 Brazil
    • 10.5.3 Chile
    • 10.5.4 Rest of South America
  • 10.6 Middle East & Africa
    • 10.6.1 Saudi Arabia
    • 10.6.2 UAE
    • 10.6.3 Qatar
    • 10.6.4 South Africa
    • 10.6.5 Rest of Middle East & Africa

11 Key Developments

  • 11.1 Agreements, Partnerships, Collaborations and Joint Ventures
  • 11.2 Acquisitions & Mergers
  • 11.3 New Product Launch
  • 11.4 Expansions
  • 11.5 Other Key Strategies

12 Company Profiling

  • 12.1 Cree, Inc. (Wolfspeed)
  • 12.2 Qorvo, Inc.
  • 12.3 Skyworks Solutions, Inc.
  • 12.4 Infineon Technologies AG
  • 12.5 MACOM Technology Solutions Holdings, Inc.
  • 12.6 NXP Semiconductors N.V.
  • 12.7 STMicroelectronics N.V.
  • 12.8 Mitsubishi Electric Corporation
  • 12.9 Analog Devices, Inc.
  • 12.10 Panasonic Corporation
  • 12.11 Texas Instruments Incorporated
  • 12.12 Toshiba Corporation
  • 12.13 Sumitomo Electric Industries, Ltd.
  • 12.14 GaN Systems Inc.
  • 12.15 Analogic Corporation
  • 12.16 United Monolithic Semiconductors (UMS)
  • 12.17 Transphorm, Inc.

List of Tables

  • Table 1 Global RF GaN Market Outlook, By Region (2024-2032) ($MN)
  • Table 2 Global RF GaN Market Outlook, By Material Type (2024-2032) ($MN)
  • Table 3 Global RF GaN Market Outlook, By GaN-on-SiC (2024-2032) ($MN)
  • Table 4 Global RF GaN Market Outlook, By GaN-on-Silicon (2024-2032) ($MN)
  • Table 5 Global RF GaN Market Outlook, By GaN-on-Diamond (2024-2032) ($MN)
  • Table 6 Global RF GaN Market Outlook, By Other Material Types (2024-2032) ($MN)
  • Table 7 Global RF GaN Market Outlook, By Device Type (2024-2032) ($MN)
  • Table 8 Global RF GaN Market Outlook, By Discrete Devices (2024-2032) ($MN)
  • Table 9 Global RF GaN Market Outlook, By Integrated Devices (MMICs) (2024-2032) ($MN)
  • Table 10 Global RF GaN Market Outlook, By Wafer Size (2024-2032) ($MN)
  • Table 11 Global RF GaN Market Outlook, By <150 mm (2024-2032) ($MN)
  • Table 12 Global RF GaN Market Outlook, By 150 mm and Larger (2024-2032) ($MN)
  • Table 13 Global RF GaN Market Outlook, By Application (2024-2032) ($MN)
  • Table 14 Global RF GaN Market Outlook, By Wireless Infrastructure (2024-2032) ($MN)
  • Table 15 Global RF GaN Market Outlook, By Radar Systems (2024-2032) ($MN)
  • Table 16 Global RF GaN Market Outlook, By Satellite Communication (2024-2032) ($MN)
  • Table 17 Global RF GaN Market Outlook, By Test & Measurement Equipment (2024-2032) ($MN)
  • Table 18 Global RF GaN Market Outlook, By Electronic Warfare (2024-2032) ($MN)
  • Table 19 Global RF GaN Market Outlook, By RF energy (2024-2032) ($MN)
  • Table 20 Global RF GaN Market Outlook, By Other Applications (2024-2032) ($MN)
  • Table 21 Global RF GaN Market Outlook, By End User (2024-2032) ($MN)
  • Table 22 Global RF GaN Market Outlook, By Aerospace & Defense (2024-2032) ($MN)
  • Table 23 Global RF GaN Market Outlook, By Telecommunications (2024-2032) ($MN)
  • Table 24 Global RF GaN Market Outlook, By Automotive (2024-2032) ($MN)
  • Table 25 Global RF GaN Market Outlook, By Healthcare (2024-2032) ($MN)
  • Table 26 Global RF GaN Market Outlook, By Industrial (2024-2032) ($MN)
  • Table 27 Global RF GaN Market Outlook, By Other End Users (2024-2032) ($MN)

Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.