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市場調查報告書
商品編碼
1737103
全球 GaN基板和 GaN 晶圓市場規模(按類型、應用、地區、範圍和預測)Global GaN Substrate And GaN Wafer Market Size By Type (Sapphire, GaN on SiC, GaN on Si), By End-Use (Healthcare, Automobiles, Consumer Electronics), By Geographic Scope And Forecast |
2024 年 GaN基板和 GaN 晶圓市場規模價值為 25.5 億美元,預計到 2032 年將達到 84.1 億美元,2026 年至 2032 年的複合年成長率為 16.07%。
GaN製造商和商業化業務的增加、家用電器和汽車需求的不斷成長,以及對低功耗設備日益成長的需求,都推動了市場的擴張。本報告對全球GaN基板和GaN晶圓市場進行了全面評估,並全面分析了關鍵細分市場、趨勢、市場促進因素、限制因素、競爭格局以及影響市場發展的主要因素。
定義全球GaN基板和GaN晶圓市場
具有高熱導率和熱容量的硬質半導體材料包括GaN基板和GaN晶片。這些材料因其高耐壓性而用於製造功率放大器和電晶體。由於其高飽和速度和飽和溫度,它們也用於微波應用。由於技術進步和透過電子元件實現的智慧電源管理,GaN晶片在家用電子電器領域的需求量很大。由於消費需求的成長,行動組件和電子設備市場預計將蓬勃發展。
矽基氮化鎵 (GaN) 和藍寶石基氮化鎵 (GaN) 都已被證明是電子領域非常強大的半導體。對高效能電力傳輸和低功耗的需求,以及 LED 技術日益普及,正在推動該市場的擴張。 GaN基板和晶圓在汽車行業中用於製造各種電子和汽車零件。在航太和國防工業中,雷達系統中使用的積體電路採用 GaN 可實現有效的空中交通管制、導航和即時空中交通更新。智慧型手機和筆記型電腦等智慧型裝置的使用以及物聯網 (IoT) 的發展預計將增加 GaN基板和晶圓的產量。
我們的報告包含可操作的數據和前瞻性的分析,可協助您制定宣傳方案、建立商業計劃、組織簡報或撰寫提案。
全球GaN基板及GaN晶圓市場概況
GaN製造商和商業企業數量的不斷成長、家用電器和汽車市場需求的不斷成長以及對低功耗設備日益成長的需求,都推動了市場的擴張。此外,GaN正日益普及,並正在取代電子元件中的傳統矽半導體,預計將推動該市場的收益成長。然而,該領域醫學研究的匱乏可能會阻礙整體市場的成長。市場上也存在一些主要競爭對手,他們正致力於建立合作夥伴關係,以推動GaN技術的進步。
例如,東芝公司開發了閘極介電製程技術,以減少GaN功率元件閾值電壓等特性的波動,並提高其可靠性。 GaN技術開發正受到包括美國空軍研究實驗室、馬克斯普朗克學會和亥姆霍茲學會在內的許多研究機構的優先重視。
GaN Substrate And GaN Wafer Market size was valued at USD 2.55 Billion in 2024 and is projected to reach USD 8.41 Billion by 2032, growing at a CAGR of 16.07% from 2026 to 2032.
A growing number of GaN manufacturers and commercial businesses, rising consumer electronics and automotive demand, and increased need for low-power consumption devices are all contributing to the market's expansion. The Global GaN Substrate And GaN Wafer Market report provides a holistic evaluation of the market. The report offers a comprehensive analysis of key segments, trends, drivers, restraints, competitive landscape, and factors that are playing a substantial role in the market.
Global GaN Substrate And GaN Wafer Market Definition
Hard semiconductor materials with a high thermal conductivity and heat capacity include GaN Substrate and GaN Wafer. These materials are utilized to create power amplifiers and transistors as they have a high voltage carrying capacity. It is employed in microwave applications due to its high saturation velocity and temperature. GaN wafers are in high demand in the consumer electronics sector due to technical advancements and smart power management by electronic components. The market for portable components and gadgets is anticipated to develop as a result of rising consumer demand.
GaN on Silicon and GaN on Sapphire both demonstrate to be very powerful semiconductors in the electronics sector. The necessity for effective electric power transmission and low power consumption, together with the rising adoption rate of LED technology, is what is driving this market's expansion. GaN substrates and wafers are used by the automobile sector to produce a variety of electronic and car parts. For the aerospace and defence industries, effective air control, navigation, and real-time air traffic updates are made possible by the employment of GaN in the IC used in radar systems. The use of smart gadgets like smartphones and laptops as well as the Internet of Things (IoT) are all predicted to increase the production of GaN substrates and wafers.
Our reports include actionable data and forward-looking analysis that help you craft pitches, create business plans, build presentations and write proposals.
Global GaN Substrate And GaN Wafer Market Overview
A growing number of GaN manufacturers and commercial businesses, rising consumer electronics and automotive demand, and increased need for low-power consumption devices are all contributing to the market's expansion. Additionally, GaN is increasingly popular and is replacing conventional silicon semiconductors in electronic components, which is anticipated to drive this market's revenue growth. The market's total growth, however, could be hampered by a dearth of medical research in this area. A few key competitors in the market are also concentrating on partnerships and collaborations for the advancement of the GaN technology.
As an illustration, Toshiba Corporation has created a gate dielectric process technology to lower changes in GaN power device properties, such as the threshold voltage, and increase their dependability. The development of GaN technology is being prioritized by numerous research organizations, including The Air Force Research Laboratory, Max-Planck-Gesellschaft, and Helmholtz Association.
The Global GaN Substrate And GaN Wafer Market is segmented on the basis of Type, End-Use, and Geography.
Based on Type, the market is segmented into GaN on Sapphire, GaN on SiC, GaN on Si, and GaN on GaN.
Based on End-Use, the market is segmented into Healthcare, Automobiles, Consumer Electronics, General Lighting, and Military and Defence.
The "Global GaN Substrate And GaN Wafer Market" study report will provide valuable insight with an emphasis on the global market. The major players in the market are Saint Gobain Ltd, Aixtron Ltd, Soitec Pte Ltd, Sumitomo Electric Industries, Ltd, Fujitsu Limited, Toshiba Corporation, NTT Advanced Technology Corporation, Kyma Technologies. Mitsubishi Chemical Corporation, EpiGaN NV.
Our market analysis includes a section specifically devoted to such major players, where our analysts give an overview of each player's financial statements, along with product benchmarking and SWOT analysis. Key development strategies, market share analysis, and market positioning analysis of the aforementioned players globally are also included in the competitive landscape section.