射頻氮化鎵半導體市場－全球產業規模、佔有率、趨勢、機會和預測，按材料、應用、最終用戶、地區和競爭格局分類，2020-2030年預測

2024年全球射頻氮化鎵（GaN）半導體裝置市場規模為24.2億美元，預計到2030年將以20.83%的複合年成長率成長至75.3億美元。射頻氮化鎵半導體裝置利用氮化鎵的寬頻隙特性，在高頻和高功率射頻應用中展現出卓越的性能，其特點是高擊穿電壓、更高的功率密度和高效的運作。市場成長的根本動力在於全球5G通訊基礎設施的廣泛部署，這需要先進的射頻組件來管理更高的頻率和功率位準。

主要市場促進因素

主要市場挑戰

主要市場趨勢

目錄

第1章：產品概述

第2章：研究方法

第3章：執行概要

第4章：顧客之聲

第5章：全球射頻氮化鎵半導體裝置市場展望

• 市場規模及預測
  • 按價值
• 市佔率及預測
  • 依材料分類（碳化矽上氮化鎵、矽上氮化鎵、鑽石上氮化鎵）
  • 依最終用戶（航太與國防、IT與電信、消費性電子、汽車、其他）分類
  • 按應用領域（無線基礎設施、儲能、衛星通訊、光伏逆變器、其他）
  • 按地區
  • 按公司（2024 年）
• 市場地圖

第6章：北美射頻氮化鎵半導體裝置市場展望

• 市場規模及預測
• 市佔率及預測
• 北美洲：國家分析
  • 美國
  • 加拿大
  • 墨西哥

第7章：歐洲射頻氮化鎵半導體裝置市場展望

• 市場規模及預測
• 市佔率及預測
• 歐洲：國家分析
  • 德國
  • 法國
  • 英國
  • 義大利
  • 西班牙

第8章：亞太地區射頻氮化鎵半導體裝置市場展望

• 市場規模及預測
• 市佔率及預測
• 亞太地區：國家分析
  • 中國
  • 印度
  • 日本
  • 韓國
  • 澳洲

第9章：中東和非洲射頻氮化鎵半導體裝置市場展望

• 市場規模及預測
• 市佔率及預測
• 中東和非洲：國家分析
  • 沙烏地阿拉伯
  • 阿拉伯聯合大公國
  • 南非

第10章：南美洲射頻氮化鎵半導體裝置市場展望

• 市場規模及預測
• 市佔率及預測
• 南美洲：國家分析
  • 巴西
  • 哥倫比亞
  • 阿根廷

第11章：市場動態

• 促進要素
• 挑戰

第12章：市場趨勢與發展

• 併購（如有）
• 產品發布（如有）
• 最新進展

第13章：全球射頻氮化鎵半導體裝置市場：SWOT分析

第14章：波特五力分析

• 產業競爭
• 新進入者的潛力
• 供應商議價能力
• 顧客的力量
• 替代產品的威脅

第15章：競爭格局

• Taiwan Semiconductor Manufacturing Company Limited
• Samsung Electronics Co., Ltd.
• Intel Corporation
• GlobalFoundries Inc.
• United Microelectronics Corporation
• Micron Technology, Inc.
• Semiconductor Manufacturing International Corporation
• STMicroelectronics International NV
• NXP Semiconductors NV
• Analog devises Inc.

第16章：策略建議

第17章調查會社について,免責事項

The Global RF GaN Semiconductor Device Market, valued at USD 2.42 Billion in 2024, is projected to experience a CAGR of 20.83% to reach USD 7.53 Billion by 2030. RF Gallium Nitride (GaN) semiconductor devices are components leveraging the wide-bandgap properties of Gallium Nitride to deliver superior performance in high-frequency and high-power radio frequency applications, characterized by high breakdown voltage, enhanced power density, and efficient operation. The market's growth is fundamentally supported by the extensive global deployment of 5G telecommunications infrastructure, requiring advanced RF components for base stations to manage higher frequencies and power levels.

Key Market Drivers

The accelerated global deployment of 5G networks is a significant driver for RF GaN semiconductor devices. Gallium nitride's high power density and efficiency at high frequencies make it an optimal material for the power amplifiers and front-end modules essential to 5G base stations and active antenna systems. This technology enables telecommunication infrastructure to support increased bandwidth and lower latency, facilitating denser network coverage and faster data transmission

Key Market Challenges

The inherent manufacturing complexity and elevated production costs present a significant challenge to the sustained growth of the Global RF GaN Semiconductor Device Market. Producing GaN devices requires highly specialized fabrication processes, including stringent environmental controls and costly, dedicated equipment. This substantially increases per-unit expenses and often results in lower manufacturing yields when compared to more mature silicon technologies. These factors directly impede market expansion by making RF GaN components less competitive in price-sensitive applications and limiting broader adoption, despite their superior performance attributes.

Key Market Trends

Miniaturization and monolithic integration of devices represent a key advancement, driving the development of smaller, more powerful, and thermally efficient RF systems. This trend allows for greater functionality in reduced footprints, essential for integrating advanced RF capabilities into a wider array of platforms. As companies invest heavily in such technological progress, according to the Semiconductor Industry Association, U. S. semiconductor industry investment in research and development totaled $59.3 billion in 2023, representing a 0.9% increase over 2022. This sustained investment supports the intricate fabrication processes required for highly integrated GaN solutions.

Key Market Players

• Taiwan Semiconductor Manufacturing Company Limited
• Samsung Electronics Co., Ltd.
• Intel Corporation
• GlobalFoundries Inc.
• United Microelectronics Corporation
• Micron Technology, Inc.
• Semiconductor Manufacturing International Corporation
• STMicroelectronics International N.V.
• NXP Semiconductors N.V.
• Analog devises Inc.

Report Scope:

In this report, the Global RF GaN Semiconductor Device Market has been segmented into the following categories, in addition to the industry trends which have also been detailed below:

RF GaN Semiconductor Device Market, By Material:

• GaN-On-SiC
• GaN-On-Silicon
• GaN-On-Diamond

RF GaN Semiconductor Device Market, By End-Users:

• Aerospace & Defense
• IT & Telecom
• Consumer Electronics
• Automotive
• Others

RF GaN Semiconductor Device Market, By Application:

• Wireless Infrastructure
• Power Storage
• Satellite Communication
• PV Inverter
• Others

RF GaN Semiconductor Device Market, By Region:

• North America
  • United States
  • Canada
  • Mexico
• Europe
  • France
  • United Kingdom
  • Italy
  • Germany
  • Spain
• Asia Pacific
  • China
  • India
  • Japan
  • Australia
  • South Korea
• South America
  • Brazil
  • Argentina
  • Colombia
• Middle East & Africa
  • South Africa
  • Saudi Arabia
  • UAE

Competitive Landscape

Company Profiles: Detailed analysis of the major companies presents in the Global RF GaN Semiconductor Device Market.

Available Customizations:

Global RF GaN Semiconductor Device Market report with the given market data, TechSci Research offers customizations according to a company's specific needs. The following customization options are available for the report:

Company Information

• Detailed analysis and profiling of additional market players (up to five).

Table of Contents

1. Product Overview

• 1.1. Market Definition
• 1.2. Scope of the Market
  • 1.2.1. Markets Covered
  • 1.2.2. Years Considered for Study
  • 1.2.3. Key Market Segmentations

2. Research Methodology

• 2.1. Objective of the Study
• 2.2. Baseline Methodology
• 2.3. Key Industry Partners
• 2.4. Major Association and Secondary Sources
• 2.5. Forecasting Methodology
• 2.6. Data Triangulation & Validation
• 2.7. Assumptions and Limitations

3. Executive Summary

• 3.1. Overview of the Market
• 3.2. Overview of Key Market Segmentations
• 3.3. Overview of Key Market Players
• 3.4. Overview of Key Regions/Countries
• 3.5. Overview of Market Drivers, Challenges, Trends

4. Voice of Customer

5. Global RF GaN Semiconductor Device Market Outlook

• 5.1. Market Size & Forecast
  • 5.1.1. By Value
• 5.2. Market Share & Forecast
  • 5.2.1. By Material (GaN-On-SiC, GaN-On-Silicon, GaN-On-Diamond)
  • 5.2.2. By End-Users (Aerospace & Defense, IT & Telecom, Consumer Electronics, Automotive, Others)
  • 5.2.3. By Application (Wireless Infrastructure, Power Storage, Satellite Communication, PV Inverter, Others)
  • 5.2.4. By Region
  • 5.2.5. By Company (2024)
• 5.3. Market Map

6. North America RF GaN Semiconductor Device Market Outlook

• 6.1. Market Size & Forecast
  • 6.1.1. By Value
• 6.2. Market Share & Forecast
  • 6.2.1. By Material
  • 6.2.2. By End-Users
  • 6.2.3. By Application
  • 6.2.4. By Country
• 6.3. North America: Country Analysis
  • 6.3.1. United States RF GaN Semiconductor Device Market Outlook
    • 6.3.1.1. Market Size & Forecast
      • 6.3.1.1.1. By Value
    • 6.3.1.2. Market Share & Forecast
      • 6.3.1.2.1. By Material
      • 6.3.1.2.2. By End-Users
      • 6.3.1.2.3. By Application
  • 6.3.2. Canada RF GaN Semiconductor Device Market Outlook
    • 6.3.2.1. Market Size & Forecast
      • 6.3.2.1.1. By Value
    • 6.3.2.2. Market Share & Forecast
      • 6.3.2.2.1. By Material
      • 6.3.2.2.2. By End-Users
      • 6.3.2.2.3. By Application
  • 6.3.3. Mexico RF GaN Semiconductor Device Market Outlook
    • 6.3.3.1. Market Size & Forecast
      • 6.3.3.1.1. By Value
    • 6.3.3.2. Market Share & Forecast
      • 6.3.3.2.1. By Material
      • 6.3.3.2.2. By End-Users
      • 6.3.3.2.3. By Application

7. Europe RF GaN Semiconductor Device Market Outlook

• 7.1. Market Size & Forecast
  • 7.1.1. By Value
• 7.2. Market Share & Forecast
  • 7.2.1. By Material
  • 7.2.2. By End-Users
  • 7.2.3. By Application
  • 7.2.4. By Country
• 7.3. Europe: Country Analysis
  • 7.3.1. Germany RF GaN Semiconductor Device Market Outlook
    • 7.3.1.1. Market Size & Forecast
      • 7.3.1.1.1. By Value
    • 7.3.1.2. Market Share & Forecast
      • 7.3.1.2.1. By Material
      • 7.3.1.2.2. By End-Users
      • 7.3.1.2.3. By Application
  • 7.3.2. France RF GaN Semiconductor Device Market Outlook
    • 7.3.2.1. Market Size & Forecast
      • 7.3.2.1.1. By Value
    • 7.3.2.2. Market Share & Forecast
      • 7.3.2.2.1. By Material
      • 7.3.2.2.2. By End-Users
      • 7.3.2.2.3. By Application
  • 7.3.3. United Kingdom RF GaN Semiconductor Device Market Outlook
    • 7.3.3.1. Market Size & Forecast
      • 7.3.3.1.1. By Value
    • 7.3.3.2. Market Share & Forecast
      • 7.3.3.2.1. By Material
      • 7.3.3.2.2. By End-Users
      • 7.3.3.2.3. By Application
  • 7.3.4. Italy RF GaN Semiconductor Device Market Outlook
    • 7.3.4.1. Market Size & Forecast
      • 7.3.4.1.1. By Value
    • 7.3.4.2. Market Share & Forecast
      • 7.3.4.2.1. By Material
      • 7.3.4.2.2. By End-Users
      • 7.3.4.2.3. By Application
  • 7.3.5. Spain RF GaN Semiconductor Device Market Outlook
    • 7.3.5.1. Market Size & Forecast
      • 7.3.5.1.1. By Value
    • 7.3.5.2. Market Share & Forecast
      • 7.3.5.2.1. By Material
      • 7.3.5.2.2. By End-Users
      • 7.3.5.2.3. By Application

8. Asia Pacific RF GaN Semiconductor Device Market Outlook

• 8.1. Market Size & Forecast
  • 8.1.1. By Value
• 8.2. Market Share & Forecast
  • 8.2.1. By Material
  • 8.2.2. By End-Users
  • 8.2.3. By Application
  • 8.2.4. By Country
• 8.3. Asia Pacific: Country Analysis
  • 8.3.1. China RF GaN Semiconductor Device Market Outlook
    • 8.3.1.1. Market Size & Forecast
      • 8.3.1.1.1. By Value
    • 8.3.1.2. Market Share & Forecast
      • 8.3.1.2.1. By Material
      • 8.3.1.2.2. By End-Users
      • 8.3.1.2.3. By Application
  • 8.3.2. India RF GaN Semiconductor Device Market Outlook
    • 8.3.2.1. Market Size & Forecast
      • 8.3.2.1.1. By Value
    • 8.3.2.2. Market Share & Forecast
      • 8.3.2.2.1. By Material
      • 8.3.2.2.2. By End-Users
      • 8.3.2.2.3. By Application
  • 8.3.3. Japan RF GaN Semiconductor Device Market Outlook
    • 8.3.3.1. Market Size & Forecast
      • 8.3.3.1.1. By Value
    • 8.3.3.2. Market Share & Forecast
      • 8.3.3.2.1. By Material
      • 8.3.3.2.2. By End-Users
      • 8.3.3.2.3. By Application
  • 8.3.4. South Korea RF GaN Semiconductor Device Market Outlook
    • 8.3.4.1. Market Size & Forecast
      • 8.3.4.1.1. By Value
    • 8.3.4.2. Market Share & Forecast
      • 8.3.4.2.1. By Material
      • 8.3.4.2.2. By End-Users
      • 8.3.4.2.3. By Application
  • 8.3.5. Australia RF GaN Semiconductor Device Market Outlook
    • 8.3.5.1. Market Size & Forecast
      • 8.3.5.1.1. By Value
    • 8.3.5.2. Market Share & Forecast
      • 8.3.5.2.1. By Material
      • 8.3.5.2.2. By End-Users
      • 8.3.5.2.3. By Application

9. Middle East & Africa RF GaN Semiconductor Device Market Outlook

• 9.1. Market Size & Forecast
  • 9.1.1. By Value
• 9.2. Market Share & Forecast
  • 9.2.1. By Material
  • 9.2.2. By End-Users
  • 9.2.3. By Application
  • 9.2.4. By Country
• 9.3. Middle East & Africa: Country Analysis
  • 9.3.1. Saudi Arabia RF GaN Semiconductor Device Market Outlook
    • 9.3.1.1. Market Size & Forecast
      • 9.3.1.1.1. By Value
    • 9.3.1.2. Market Share & Forecast
      • 9.3.1.2.1. By Material
      • 9.3.1.2.2. By End-Users
      • 9.3.1.2.3. By Application
  • 9.3.2. UAE RF GaN Semiconductor Device Market Outlook
    • 9.3.2.1. Market Size & Forecast
      • 9.3.2.1.1. By Value
    • 9.3.2.2. Market Share & Forecast
      • 9.3.2.2.1. By Material
      • 9.3.2.2.2. By End-Users
      • 9.3.2.2.3. By Application
  • 9.3.3. South Africa RF GaN Semiconductor Device Market Outlook
    • 9.3.3.1. Market Size & Forecast
      • 9.3.3.1.1. By Value
    • 9.3.3.2. Market Share & Forecast
      • 9.3.3.2.1. By Material
      • 9.3.3.2.2. By End-Users
      • 9.3.3.2.3. By Application

10. South America RF GaN Semiconductor Device Market Outlook

• 10.1. Market Size & Forecast
  • 10.1.1. By Value
• 10.2. Market Share & Forecast
  • 10.2.1. By Material
  • 10.2.2. By End-Users
  • 10.2.3. By Application
  • 10.2.4. By Country
• 10.3. South America: Country Analysis
  • 10.3.1. Brazil RF GaN Semiconductor Device Market Outlook
    • 10.3.1.1. Market Size & Forecast
      • 10.3.1.1.1. By Value
    • 10.3.1.2. Market Share & Forecast
      • 10.3.1.2.1. By Material
      • 10.3.1.2.2. By End-Users
      • 10.3.1.2.3. By Application
  • 10.3.2. Colombia RF GaN Semiconductor Device Market Outlook
    • 10.3.2.1. Market Size & Forecast
      • 10.3.2.1.1. By Value
    • 10.3.2.2. Market Share & Forecast
      • 10.3.2.2.1. By Material
      • 10.3.2.2.2. By End-Users
      • 10.3.2.2.3. By Application
  • 10.3.3. Argentina RF GaN Semiconductor Device Market Outlook
    • 10.3.3.1. Market Size & Forecast
      • 10.3.3.1.1. By Value
    • 10.3.3.2. Market Share & Forecast
      • 10.3.3.2.1. By Material
      • 10.3.3.2.2. By End-Users
      • 10.3.3.2.3. By Application

11. Market Dynamics

• 11.1. Drivers
• 11.2. Challenges

12. Market Trends & Developments

• 12.1. Merger & Acquisition (If Any)
• 12.2. Product Launches (If Any)
• 12.3. Recent Developments

13. Global RF GaN Semiconductor Device Market: SWOT Analysis

14. Porter's Five Forces Analysis

• 14.1. Competition in the Industry
• 14.2. Potential of New Entrants
• 14.3. Power of Suppliers
• 14.4. Power of Customers
• 14.5. Threat of Substitute Products

15. Competitive Landscape

• 15.1. Taiwan Semiconductor Manufacturing Company Limited
  • 15.1.1. Business Overview
  • 15.1.2. Products & Services
  • 15.1.3. Recent Developments
  • 15.1.4. Key Personnel
  • 15.1.5. SWOT Analysis
• 15.2. Samsung Electronics Co., Ltd.
• 15.3. Intel Corporation
• 15.4. GlobalFoundries Inc.
• 15.5. United Microelectronics Corporation
• 15.6. Micron Technology, Inc.
• 15.7. Semiconductor Manufacturing International Corporation
• 15.8. STMicroelectronics International N.V.
• 15.9. NXP Semiconductors N.V.
• 15.10. Analog devises Inc.

16. Strategic Recommendations

17. About Us & Disclaimer