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碳化矽 (SiC) 裝置市場預測至 2032 年：按裝置類型、製造流程、封裝類型、供應鏈層級、最終用戶和地區分類的全球分析

Silicon Carbide Devices Market Forecasts to 2032 - Global Analysis By Device Type, Manufacturing Process, Packaging Type, Supply Chain Tier, End User, and By Geography
出版日期: | 出版商: Stratistics Market Research Consulting | 英文 | 商品交期: 2-3個工作天內

價格

根據 Stratistics MRC 的一項研究，預計 2025 年全球碳化矽 (SiC) 裝置市場價值將達到 41 億美元，到 2032 年將達到 213 億美元，預測期內複合年成長率為 26.5%。

碳化矽 (SiC) 裝置是先進的半導體元件，具有卓越的導熱性、耐久性和高壓性能。這些元件包括 MOSFET、二極體和功率模組，與傳統的矽元件相比，效率顯著提高。其獨特的材料特性使其能夠實現緊湊、輕巧和節能的設計，使其成為高要求應用的理想選擇。 SiC 裝置廣泛應用於電動車、可再生能源系統和工業電力電子領域，能夠實現更快的開關速度、更低的能量損耗和更高的可靠性，從而推動下一代電氣化和永續技術解決方案的發展。

電動車日益普及正在推動需求成長。

電動車的日益普及是碳化矽 (SiC) 裝置市場的主要驅動力。與矽基元件相比，SiC 半導體具有更高的效率、更快的開關速度和更優異的熱性能。 SiC 功率模組正擴大應用於電動車逆變器、車載充電器和 DC-DC 轉換器中，以延長續航里程並降低能源損耗。在政府補貼、排放氣體法規和 OEM 電氣化策略的推動下，電動車產量的成長直接加速了對 SiC MOSFET 和二極體的需求。

高昂的製造成本和材料成本

高昂的製造成本和原料成本是碳化矽 (SiC) 裝置市場的主要阻礙因素。 SiC 晶圓製造流程複雜、資本密集，且產量比率低於傳統的矽加工製程。由於高品質 SiC基板供應有限、外延生長技術要求高以及製造設備昂貴，裝置價格居高不下。儘管基於 SiC 的功率電子裝置具有長期的效率和性能優勢，但這些成本障礙可能會阻礙其在對成本敏感的應用領域以及新興電動車製造商中的普及。

擴大可再生能源併網

可再生能源的日益普及為碳化矽 (SiC) 裝置市場帶來了巨大的發展機遇，尤其是在太陽能逆變器、風力發電系統和儲能基礎設施領域。 SiC 裝置能夠承受更高的工作電壓、高溫環境，並具有優異的功率密度，使其成為下一代可再生能源轉換設備的理想之選。在全球脫碳目標和電網現代化舉措的推動下，市場對高效電源管理解決方案的需求不斷成長，這為 SiC 裝置在公用事業規模和分散式能源系統中的長期發展創造了巨大潛力。

地緣政治和貿易限制因素

鑑於碳化矽（SiC）原料供應和製造能力的區域集中性，地緣政治緊張局勢和貿易限制對碳化矽元件市場構成重大威脅。出口管制、關稅和跨境監管限制可能擾亂碳化矽晶圓的供應和裝置分銷。受半導體技術領域策略競爭的影響，這些限制可能導致成本增加和前置作業時間。長期的地緣政治不確定性可能阻礙產能擴張計劃，並影響碳化矽元件在全球汽車和能源產業的應用。

新冠疫情的影響：

新冠疫情初期，碳化矽（SiC）裝置市場受到衝擊，供應鏈中斷、晶圓廠運作放緩以及汽車生產延誤導致市場需求下降。電動車（EV）製造和可再生能源計劃的推遲也降低了短期需求。然而，隨著各國政府優先發展清潔旅遊和能源舉措，市場復甦加速。疫情後，對電動車基礎設施、電力電子和電網韌性的投資提振了需求，推動碳化矽（SiC）裝置在復甦期後持續成長。

預計在預測期內，SiC MOSFET細分市場將佔據最大的市場佔有率。

由於碳化矽 (SiC) MOSFET 相較於傳統的矽基元件具有更高的效率、更高的電壓承受能力和更優異的熱性能，預計在預測期內，SiC MOSFET 將成為市佔率最大的裝置。在電動車、快速充電基礎設施和可再生能源系統等快速應用領域的推動下，SiC MOSFET 可提供更高的開關頻率和更低的能量損耗。此外，成本的持續降低和產能的不斷提升也促進了其在工業和電力電子應用領域的大規模應用。

預計在預測期內，塊狀碳化矽（SiC）成長領域將呈現最高的複合年成長率。

預計在預測期內，體矽碳化矽（SiC）生長領域將實現最高成長率，這主要得益於對高品質基板和晶圓日益成長的需求。隨著SiC基功率元件產量的不斷提高，該領域受益於晶體生長技術的持續進步和良率的產量比率。此外，半導體價值鏈上製造能力的擴張和策略合作的建立也加速了該技術的應用，使體矽碳化矽生長成為一個高成長領域。

佔比最大的地區：

由於亞太地區擁有強大的製造業基礎和高度集中的半導體代工廠，預計該地區將在預測期內佔據最大的市場佔有率。在中國、日本和韓國等國家電動車產量快速成長、可再生能源普及以及家用電子電器製造業蓬勃發展的推動下，該地區受益於穩健的供應鏈和有利於先進電力電子技術應用的政府政策。

年複合成長率最高的地區：

由於對電動車、電網現代化和國防電子領域的投資不斷增加，預計北美地區在預測期內將實現最高的複合年成長率。在強勁的研發活動、技術創新以及政府對國內半導體製造業的支持下，該地區正經歷碳化矽元件的快速商業化。因此，北美正在崛起為碳化矽技術的高成長市場。

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目錄

第1章執行摘要

第2章 前言

  • 摘要
  • 相關利益者
  • 調查範圍
  • 調查方法
  • 研究材料

第3章 市場趨勢分析

  • 促進要素
  • 抑制因素
  • 機會
  • 威脅
  • 終端用戶分析
  • 新興市場
  • 新冠疫情的感染疾病

第4章 波特五力分析

  • 供應商的議價能力
  • 買方的議價能力
  • 替代品的威脅
  • 新進入者的威脅
  • 競爭對手之間的競爭

5. 全球碳化矽 (SiC) 裝置市場（依元件類型分類）

  • SiC MOSFET
  • 碳化矽二極體
  • SiC功率模組
  • SiC逆變器模組
  • 其他設備類型

6. 全球碳化矽 (SiC) 裝置市場依製造流程分類

  • 體矽碳化物生長
  • 外延層沉積
  • 離子布植和退火
  • 晶圓減薄和切割

7. 全球碳化矽 (SiC) 裝置市場（依封裝類型分類）

  • 獨立包裝
  • 電源模組
  • 裸晶/板載晶片
  • 先進包裝

8. 全球碳化矽（SiC）元件市場依供應鏈層級分類

  • 晶圓供應商
  • 設備製造商
  • 模組整合製造商
  • OEM系統整合商

9. 全球碳化矽 (SiC) 裝置市場（依最終用戶分類）

  • 汽車製造商
  • 電力電子製造商
  • 能源和輸電營運商
  • 工業公司
  • 航太/國防

10. 全球碳化矽 (SiC) 裝置市場（按地區分類）

  • 北美洲
    • 美國
    • 加拿大
    • 墨西哥
  • 歐洲
    • 德國
    • 英國
    • 義大利
    • 法國
    • 西班牙
    • 其他歐洲
  • 亞太地區
    • 日本
    • 中國
    • 印度
    • 澳洲
    • 紐西蘭
    • 韓國
    • 亞太其他地區
  • 南美洲
    • 阿根廷
    • 巴西
    • 智利
    • 其他南美國家
  • 中東和非洲
    • 沙烏地阿拉伯
    • 阿拉伯聯合大公國
    • 卡達
    • 南非
    • 其他中東和非洲地區

第11章 重大進展

  • 協議、夥伴關係、合作和合資企業
  • 併購
  • 新產品發布
  • 業務拓展
  • 其他關鍵策略

第12章 企業概況

  • Wolfspeed
  • STMicroelectronics
  • Fuji Electric
  • ROHM Co., Ltd.
  • Infineon Technologies
  • onsemi
  • Toshiba
  • Microchip Technology
  • Renesas Electronics
  • General Electric
  • GeneSiC
  • Alpha &Omega Semiconductor
  • Microsemi
  • Qorvo
  • Power Integrations
  • Littelfuse
Product Code: SMRC32843

According to Stratistics MRC, the Global Silicon Carbide Devices Market is accounted for $4.1 billion in 2025 and is expected to reach $21.3 billion by 2032 growing at a CAGR of 26.5% during the forecast period. Silicon carbide (SiC) devices are advanced semiconductor components engineered for superior thermal conductivity, durability, and high voltage performance. Encompassing MOSFETs, diodes, and power modules, they deliver significant efficiency gains compared to conventional silicon devices. Their unique material properties allow compact, lightweight, and energy efficient designs, making them ideal for demanding applications. Widely adopted in electric vehicles, renewable energy systems, and industrial power electronics, SiC devices enable faster switching, reduced energy losses, and enhanced reliability, driving next generation electrification and sustainable technology solutions.

Market Dynamics:

Driver:

Rising EV adoption boosts demand

Rising adoption of electric vehicles is a major driver of the Silicon Carbide (SiC) Devices market, as SiC semiconductors enable higher efficiency, faster switching, and improved thermal performance compared to silicon-based devices. SiC power modules are increasingly used in EV inverters, onboard chargers, and DC-DC converters to extend driving range and reduce energy losses. Fueled by government incentives, emission regulations, and OEM electrification strategies, EV production growth is directly accelerating demand for SiC MOSFETs and diodes.

Restraint:

High manufacturing and material costs

High manufacturing and raw material costs act as a key restraint in the Silicon Carbide Devices market. SiC wafer production is complex, capital-intensive, and characterized by lower yields compared to conventional silicon processing. Spurred by limited availability of high-quality SiC substrates, advanced epitaxy requirements, and costly fabrication equipment, device pricing remains elevated. These cost barriers can slow adoption among cost-sensitive applications and emerging EV manufacturers, despite the long-term efficiency and performance advantages offered by SiC-based power electronics.

Opportunity:

Expansion in renewable energy integration

Expansion in renewable energy integration presents a strong opportunity for the Silicon Carbide Devices market, particularly in solar inverters, wind power systems, and energy storage infrastructure. SiC devices support higher operating voltages, elevated temperatures, and superior power density, making them ideal for next-generation renewable energy converters. Driven by global decarbonization targets and grid modernization initiatives, demand for efficient power management solutions is rising. This creates long-term growth potential for SiC devices across utility-scale and distributed energy systems.

Threat:

Geopolitical and trade restrictions

Geopolitical tensions and trade restrictions pose a notable threat to the Silicon Carbide Devices market, given the concentration of raw material sourcing and manufacturing capabilities in specific regions. Export controls, tariffs, and cross-border regulatory constraints can disrupt SiC wafer supply and device distribution. Influenced by strategic competition in semiconductor technologies, such restrictions may increase costs and lead times. Prolonged geopolitical uncertainty could hinder capacity expansion plans and affect global adoption of SiC devices across automotive and energy sectors.

Covid-19 Impact:

The COVID-19 pandemic initially disrupted the Silicon Carbide Devices market through supply chain interruptions, fab slowdowns, and delays in automotive production. Short-term demand declined as EV manufacturing and renewable energy projects were postponed. However, recovery accelerated as governments prioritized clean mobility and energy transition initiatives. Post-pandemic investments in EV infrastructure, power electronics, and grid resilience strengthened demand, positioning SiC devices for sustained growth beyond the recovery phase.

The SiC MOSFETs segment is expected to be the largest during the forecast period

The SiC MOSFETs segment is expected to account for the largest market share during the forecast period, driven by its superior efficiency, high-voltage capability, and thermal performance compared to conventional silicon-based devices. Fueled by accelerating adoption in electric vehicles, fast-charging infrastructure, and renewable energy systems, SiC MOSFETs enable higher switching frequencies and reduced energy losses. Additionally, ongoing cost reductions and increased production capacity are reinforcing their large-scale deployment across industrial and power electronics applications.

The bulk SiC growth segment is expected to have the highest CAGR during the forecast period

Over the forecast period, the bulk SiC growth segment is predicted to witness the highest growth rate, supported by increasing demand for high-quality substrates and wafers. Propelled by rising production of SiC-based power devices, this segment benefits from continuous advancements in crystal growth techniques and yield improvement. Furthermore, expanding fabrication capacity and strategic partnerships across the semiconductor value chain are accelerating adoption, positioning bulk SiC growth as a high-growth segment.

Region with largest share:

During the forecast period, the Asia Pacific region is expected to hold the largest market share, attributed to the strong manufacturing base and high concentration of semiconductor foundries. Driven by rapid EV production growth, renewable energy deployment, and consumer electronics manufacturing in countries such as China, Japan, and South Korea, the region benefits from robust supply chains and favorable government policies supporting advanced power electronics adoption.

Region with highest CAGR:

Over the forecast period, the North America region is anticipated to exhibit the highest CAGR associated with increasing investments in electric mobility, grid modernization, and defense electronics. Fueled by strong R&D activities, technological innovation, and government support for domestic semiconductor manufacturing, the region is witnessing rapid commercialization of SiC devices. Consequently, North America is emerging as a high-growth market for silicon carbide technologies.

Key players in the market

Some of the key players in Silicon Carbide Devices Market include Wolfspeed, STMicroelectronics, Fuji Electric, ROHM Co., Ltd., Infineon Technologies, onsemi, Toshiba, Microchip Technology, Renesas Electronics, General Electric, GeneSiC, Alpha & Omega Semiconductor, Microsemi, Qorvo, Power Integrations, and Littelfuse.

Key Developments:

In September 2025, Wolfspeed announced the commercial launch of its 200mm Silicon Carbide materials portfolio, enabling large-scale manufacturing of SiC devices. This milestone strengthens Wolfspeed's leadership in SiC substrates and supports next-generation EV and industrial power applications.

In April 2025, STMicroelectronics unveiled its new generation of SiC power technology tailored for next-generation EV traction inverters. The rollout across 750V and 1200V classes will expand SiC adoption from premium EVs to mid-size and compact models.

In April 2025, ROHM developed new high-power density SiC molded modules (4-in-1 and 6-in-1) optimized for onboard chargers (OBCs) in EVs. These modules improve heat dissipation and efficiency in compact designs.

Device Types Covered:

  • SiC MOSFETs
  • SiC Diodes
  • SiC Power Modules
  • SiC Inverter Modules
  • Other Device Types

Manufacturing Processes Covered:

  • Bulk SiC Growth
  • Epitaxial Layer Deposition
  • Ion Implantation & Annealing
  • Wafer Thinning & Dicing

Packaging Types Covered:

  • Discrete Packages
  • Power Modules
  • Bare Die / Chip-on-Board
  • Advanced Packaging

Supply Chain Tiers Covered:

  • Wafer Suppliers
  • Device Fabricators
  • Module Integrators
  • OEM System Integrators

End Users Covered:

  • Automotive OEMs
  • Power Electronics Manufacturers
  • Energy & Grid Operators
  • Industrial Enterprises
  • Aerospace & Defense

Regions Covered:

  • North America
    • US
    • Canada
    • Mexico
  • Europe
    • Germany
    • UK
    • Italy
    • France
    • Spain
    • Rest of Europe
  • Asia Pacific
    • Japan
    • China
    • India
    • Australia
    • New Zealand
    • South Korea
    • Rest of Asia Pacific
  • South America
    • Argentina
    • Brazil
    • Chile
    • Rest of South America
  • Middle East & Africa
    • Saudi Arabia
    • UAE
    • Qatar
    • South Africa
    • Rest of Middle East & Africa

What our report offers:

  • Market share assessments for the regional and country-level segments
  • Strategic recommendations for the new entrants
  • Covers Market data for the years 2024, 2025, 2026, 2028, and 2032
  • Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations)
  • Strategic recommendations in key business segments based on the market estimations
  • Competitive landscaping mapping the key common trends
  • Company profiling with detailed strategies, financials, and recent developments
  • Supply chain trends mapping the latest technological advancements

Free Customization Offerings:

All the customers of this report will be entitled to receive one of the following free customization options:

  • Company Profiling
    • Comprehensive profiling of additional market players (up to 3)
    • SWOT Analysis of key players (up to 3)
  • Regional Segmentation
    • Market estimations, Forecasts and CAGR of any prominent country as per the client's interest (Note: Depends on feasibility check)
  • Competitive Benchmarking
    • Benchmarking of key players based on product portfolio, geographical presence, and strategic alliances

Table of Contents

1 Executive Summary

2 Preface

  • 2.1 Abstract
  • 2.2 Stake Holders
  • 2.3 Research Scope
  • 2.4 Research Methodology
    • 2.4.1 Data Mining
    • 2.4.2 Data Analysis
    • 2.4.3 Data Validation
    • 2.4.4 Research Approach
  • 2.5 Research Sources
    • 2.5.1 Primary Research Sources
    • 2.5.2 Secondary Research Sources
    • 2.5.3 Assumptions

3 Market Trend Analysis

  • 3.1 Introduction
  • 3.2 Drivers
  • 3.3 Restraints
  • 3.4 Opportunities
  • 3.5 Threats
  • 3.6 End User Analysis
  • 3.7 Emerging Markets
  • 3.8 Impact of Covid-19

4 Porters Five Force Analysis

  • 4.1 Bargaining power of suppliers
  • 4.2 Bargaining power of buyers
  • 4.3 Threat of substitutes
  • 4.4 Threat of new entrants
  • 4.5 Competitive rivalry

5 Global Silicon Carbide Devices Market, By Device Type

  • 5.1 Introduction
  • 5.2 SiC MOSFETs
  • 5.3 SiC Diodes
  • 5.4 SiC Power Modules
  • 5.5 SiC Inverter Modules
  • 5.6 Other Device Types

6 Global Silicon Carbide Devices Market, By Manufacturing Process

  • 6.1 Introduction
  • 6.2 Bulk SiC Growth
  • 6.3 Epitaxial Layer Deposition
  • 6.4 Ion Implantation & Annealing
  • 6.5 Wafer Thinning & Dicing

7 Global Silicon Carbide Devices Market, By Packaging Type

  • 7.1 Introduction
  • 7.2 Discrete Packages
  • 7.3 Power Modules
  • 7.4 Bare Die / Chip-on-Board
  • 7.5 Advanced Packaging

8 Global Silicon Carbide Devices Market, By Supply Chain Tier

  • 8.1 Introduction
  • 8.2 Wafer Suppliers
  • 8.3 Device Fabricators
  • 8.4 Module Integrators
  • 8.5 OEM System Integrators

9 Global Silicon Carbide Devices Market, By End User

  • 9.1 Introduction
  • 9.2 Automotive OEMs
  • 9.3 Power Electronics Manufacturers
  • 9.4 Energy & Grid Operators
  • 9.5 Industrial Enterprises
  • 9.6 Aerospace & Defense

10 Global Silicon Carbide Devices Market, By Geography

  • 10.1 Introduction
  • 10.2 North America
    • 10.2.1 US
    • 10.2.2 Canada
    • 10.2.3 Mexico
  • 10.3 Europe
    • 10.3.1 Germany
    • 10.3.2 UK
    • 10.3.3 Italy
    • 10.3.4 France
    • 10.3.5 Spain
    • 10.3.6 Rest of Europe
  • 10.4 Asia Pacific
    • 10.4.1 Japan
    • 10.4.2 China
    • 10.4.3 India
    • 10.4.4 Australia
    • 10.4.5 New Zealand
    • 10.4.6 South Korea
    • 10.4.7 Rest of Asia Pacific
  • 10.5 South America
    • 10.5.1 Argentina
    • 10.5.2 Brazil
    • 10.5.3 Chile
    • 10.5.4 Rest of South America
  • 10.6 Middle East & Africa
    • 10.6.1 Saudi Arabia
    • 10.6.2 UAE
    • 10.6.3 Qatar
    • 10.6.4 South Africa
    • 10.6.5 Rest of Middle East & Africa

11 Key Developments

  • 11.1 Agreements, Partnerships, Collaborations and Joint Ventures
  • 11.2 Acquisitions & Mergers
  • 11.3 New Product Launch
  • 11.4 Expansions
  • 11.5 Other Key Strategies

12 Company Profiling

  • 12.1 Wolfspeed
  • 12.2 STMicroelectronics
  • 12.3 Fuji Electric
  • 12.4 ROHM Co., Ltd.
  • 12.5 Infineon Technologies
  • 12.6 onsemi
  • 12.7 Toshiba
  • 12.8 Microchip Technology
  • 12.9 Renesas Electronics
  • 12.10 General Electric
  • 12.11 GeneSiC
  • 12.12 Alpha & Omega Semiconductor
  • 12.13 Microsemi
  • 12.14 Qorvo
  • 12.15 Power Integrations
  • 12.16 Littelfuse

List of Tables

  • Table 1 Global Silicon Carbide Devices Market Outlook, By Region (2024-2032) ($MN)
  • Table 2 Global Silicon Carbide Devices Market Outlook, By Device Type (2024-2032) ($MN)
  • Table 3 Global Silicon Carbide Devices Market Outlook, By SiC MOSFETs (2024-2032) ($MN)
  • Table 4 Global Silicon Carbide Devices Market Outlook, By SiC Diodes (2024-2032) ($MN)
  • Table 5 Global Silicon Carbide Devices Market Outlook, By SiC Power Modules (2024-2032) ($MN)
  • Table 6 Global Silicon Carbide Devices Market Outlook, By SiC Inverter Modules (2024-2032) ($MN)
  • Table 7 Global Silicon Carbide Devices Market Outlook, By Other Device Types (2024-2032) ($MN)
  • Table 8 Global Silicon Carbide Devices Market Outlook, By Manufacturing Process (2024-2032) ($MN)
  • Table 9 Global Silicon Carbide Devices Market Outlook, By Bulk SiC Growth (2024-2032) ($MN)
  • Table 10 Global Silicon Carbide Devices Market Outlook, By Epitaxial Layer Deposition (2024-2032) ($MN)
  • Table 11 Global Silicon Carbide Devices Market Outlook, By Ion Implantation & Annealing (2024-2032) ($MN)
  • Table 12 Global Silicon Carbide Devices Market Outlook, By Wafer Thinning & Dicing (2024-2032) ($MN)
  • Table 13 Global Silicon Carbide Devices Market Outlook, By Packaging Type (2024-2032) ($MN)
  • Table 14 Global Silicon Carbide Devices Market Outlook, By Discrete Packages (2024-2032) ($MN)
  • Table 15 Global Silicon Carbide Devices Market Outlook, By Power Modules (2024-2032) ($MN)
  • Table 16 Global Silicon Carbide Devices Market Outlook, By Bare Die / Chip-on-Board (2024-2032) ($MN)
  • Table 17 Global Silicon Carbide Devices Market Outlook, By Advanced Packaging (2024-2032) ($MN)
  • Table 18 Global Silicon Carbide Devices Market Outlook, By Supply Chain Tier (2024-2032) ($MN)
  • Table 19 Global Silicon Carbide Devices Market Outlook, By Wafer Suppliers (2024-2032) ($MN)
  • Table 20 Global Silicon Carbide Devices Market Outlook, By Device Fabricators (2024-2032) ($MN)
  • Table 21 Global Silicon Carbide Devices Market Outlook, By Module Integrators (2024-2032) ($MN)
  • Table 22 Global Silicon Carbide Devices Market Outlook, By OEM System Integrators (2024-2032) ($MN)
  • Table 23 Global Silicon Carbide Devices Market Outlook, By End User (2024-2032) ($MN)
  • Table 24 Global Silicon Carbide Devices Market Outlook, By Automotive OEMs (2024-2032) ($MN)
  • Table 25 Global Silicon Carbide Devices Market Outlook, By Power Electronics Manufacturers (2024-2032) ($MN)
  • Table 26 Global Silicon Carbide Devices Market Outlook, By Energy & Grid Operators (2024-2032) ($MN)
  • Table 27 Global Silicon Carbide Devices Market Outlook, By Industrial Enterprises (2024-2032) ($MN)
  • Table 28 Global Silicon Carbide Devices Market Outlook, By Aerospace & Defense (2024-2032) ($MN)

Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.