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市場調查報告書
商品編碼
1755881
碳化矽 (SiC) 半導體裝置市場預測(至 2032 年):按產品、組件、晶圓尺寸、電壓範圍、應用、最終用戶和地區進行的全球分析Silicon Carbide Semiconductor Devices Market Forecasts to 2032 - Global Analysis By Product (Optoelectronic Devices, Power Semiconductors and Frequency Devices), Component, Wafer Size, Voltage Range, Application, End User and By Geography |
根據 Stratistics MRC 的數據,全球碳化矽 (SiC) 半導體裝置市場預計在 2025 年達到 36 億美元,到 2032 年將達到 160.4 億美元,預測期內的複合年成長率為 23.8%。
碳化矽 (SiC) 半導體元件是由碳化矽(矽和碳的化合物)製成的先進電子元件,以其卓越的導熱性、高電場強度和寬能能隙而聞名。這些元件包括二極體、MOSFET、功率模組等,由於其能夠在比傳統矽基元件更高的電壓、溫度和開關頻率下工作,因此可用於高功率和高頻應用。 SiC 半導體能夠提高效率、減少能量損耗並實現緊湊的系統設計,使其成為電動車、可再生能源系統、工業馬達驅動器以及性能和可靠性至關重要的航太應用的理想選擇。
電動車(EV)的普及率迅速提高
電動車 (EV) 的日益普及正在加速 SiC(碳化矽)半導體裝置市場的擴張。 SiC 裝置能夠提高效率、加快開關速度並增強導熱性,使其成為逆變器、車載充電器和動力傳動系統等電動車應用的理想選擇。隨著汽車製造商專注於提升效能、加快充電速度和延長續航里程,對 SiC 元件的需求也不斷成長。市場正在不斷擴大,SiC 半導體技術在電動車電力電子系統中的日益整合也刺激了其創新。
製造和材料成本高
高昂的製造成本和材料成本是阻礙SiC(碳化矽)半導體裝置市場成長的主要因素。複雜的製造流程和高純度碳化矽晶圓等原料的昂貴價格,導致製造成本增加。這些高昂的成本限制了SiC的大規模應用,尤其是在中小型製造商中,削弱了市場競爭力。因此,成本敏感的應用往往傾向於採用傳統的矽基替代品,這阻礙了SiC裝置的廣泛市場滲透。
可再生能源與電力電子
再生能源來源的日益普及以及電力電子技術的進步,正在推動碳化矽 (SiC) 半導體裝置市場的發展。 SiC 裝置具有高效率、快速開關和優異的熱性能,使其成為太陽能逆變器、風力發電機和智慧電網應用的理想選擇。全球脫碳趨勢的日益增強,推動了可再生能源系統對 SiC 基解決方案的需求,從而刺激了技術創新,並擴大了清潔能源和電力電子領域的市場機會。
晶圓供應有限和品質問題
晶圓供應有限且持續存在的品質問題嚴重阻礙了SiC(碳化矽)半導體裝置市場的成長。這些限制因素導致生產延遲、製造成本上升和產量比率下降,影響了供應鏈效率和整體市場的可擴展性。此外,由於無法滿足電動車和電力電子等高成長領域日益成長的需求,也阻礙了技術進步,並抑制了SiC裝置開發的潛在投資。
COVID-19的影響
新冠疫情最初擾亂了SiC(碳化矽)半導體裝置市場,原因是供應鏈中斷、工廠停工以及工業活動減少。然而,隨著電動車和可再生能源領域對節能解決方案的需求不斷成長,市場逐漸復甦。疫情加速了數位轉型,並推動了SiC裝置在高性能電子設備中的應用,使其在後謀殺時代更具韌性和適應性。
預計電源模組市場在預測期內將佔據最大佔有率
功率模組領域預計將在預測期內佔據最大的市場佔有率,因為它們具有更高的能源效率、高壓能力和卓越的熱性能。這些模組可實現緊湊輕巧的設計,使其成為電動車、可再生能源系統和工業應用的理想選擇。對快速開關速度和低能量損耗的需求日益成長,正在加速碳化矽功率模組的採用,從而推動技術進步並提高其與整體高性能電力電子系統的整合度。
預計預測期內 LED 照明領域將以最高的複合年成長率成長。
由於對高效電力電子裝置的需求,預計LED照明領域將在預測期內實現最高成長率。 SiC裝置具有高導熱性、更高的耐壓性和更高的能效,使其成為LED電源和驅動器的理想選擇。隨著節能照明日益普及,尤其是在商業和工業環境中,對可靠且緊湊的SiC基解決方案的需求也日益成長。
預計亞太地區將在預測期內佔據最大的市場佔有率,這得益於工業自動化水平的提高、電動汽車的廣泛普及以及可再生能源的廣泛應用。中國、日本和韓國等國在高效能電力電子領域的大力投資,增加了碳化矽元件的需求。政府鼓勵綠色技術和能源效率的計劃也推動了市場成長,使亞太地區成為碳化矽半導體開發和生產的主要樞紐。
預計北美地區在預測期內將實現最高的複合年成長率,這得益於電動車 (EV) 行業的擴張、可再生能源的普及以及工業自動化的進步。與傳統矽相比,SiC 裝置具有更高的效率、熱性能和耐用性,使其成為高功率應用的理想選擇。政府的支持性政策、智慧電網基礎設施投資的增加以及對節能解決方案日益成長的需求,進一步刺激了市場應用,使北美成為 SiC 技術發展的關鍵樞紐。
According to Stratistics MRC, the Global Silicon Carbide Semiconductor Devices Market is accounted for $3.6 billion in 2025 and is expected to reach $16.04 billion by 2032 growing at a CAGR of 23.8% during the forecast period. Silicon Carbide (SiC) semiconductor devices are advanced electronic components made from silicon carbide, a compound of silicon and carbon known for its exceptional thermal conductivity, high electric field strength, and wide bandgap. These devices, including diodes, MOSFETs, and power modules, are used in high-power and high-frequency applications due to their ability to operate at higher voltages, temperatures, and switching frequencies compared to traditional silicon-based devices. SiC semiconductors offer improved efficiency, reduced energy losses, and compact system designs, making them ideal for electric vehicles, renewable energy systems, industrial motor drives, and aerospace applications where performance and reliability are critical.
Surging Electric Vehicle (EV) Adoption
The growing popularity of electric vehicles (EVs) is accelerating the expansion of the Silicon Carbide (SiC) semiconductor device market. SiC devices offer improved efficiency, faster switching, and stronger thermal conductivity, making them excellent for EV applications like inverters, onboard chargers, and powertrains. The demand for SiC components is increasing as automakers place a higher priority on enhanced performance, faster charging, and longer range. The market is expanding and SiC semiconductor technology innovation is being stimulated by this increasing integration in EV power electronics.
High Manufacturing & Material Costs
High manufacturing and material costs significantly hinder the growth of the Silicon Carbide (SiC) Semiconductor Devices Market. The complex fabrication process and the expensive nature of raw materials like high-purity silicon carbide wafers lead to increased production expenses. These high costs limit mass adoption, especially among small and mid-sized manufacturers, and constrain market competitiveness. Consequently, cost-sensitive applications tend to favor traditional silicon-based alternatives, impeding broader market penetration of SiC devices.
Renewable Energy & Power Electronics
The growing adoption of renewable energy sources and advancements in power electronics are significantly propelling the Silicon Carbide (SiC) Semiconductor Devices Market. SiC devices offer high efficiency, faster switching, and better thermal performance, making them ideal for solar inverters, wind turbines, and smart grid applications. As the global push toward decarbonization intensifies, the demand for SiC-based solutions in renewable energy systems rises, driving innovation and expanding market opportunities across the clean energy and power electronics sectors.
Limited Wafer Supply & Quality Issues
Limited wafer supply and persistent quality issues are significantly hindering the growth of the Silicon Carbide (SiC) semiconductor devices market. These constraints lead to production delays, increased manufacturing costs, and reduced yield rates, affecting supply chain efficiency and overall market scalability. Moreover, the inability to meet rising demand from high-growth sectors like electric vehicles and power electronics hampers technological advancements and discourages potential investments in SiC device development.
Covid-19 Impact
The COVID-19 pandemic initially disrupted the Silicon Carbide (SiC) Semiconductor Devices Market due to supply chain interruptions, factory shutdowns, and reduced industrial activities. However, the market gradually rebounded with increased demand for energy-efficient solutions in electric vehicles and renewable energy. The pandemic accelerated digital transformation, boosting the adoption of SiC devices in high-performance electronics, leading to a resilient and adaptive recovery in the post-COVID landscape.
The power modules segment is expected to be the largest during the forecast period
The power modules segment is expected to account for the largest market share during the forecast period as it offers enhanced energy efficiency, high voltage capability, and superior thermal performance. These modules enable compact, lightweight designs, making them ideal for electric vehicles, renewable energy systems, and industrial applications. The rising demand for fast switching speeds and lower energy losses is accelerating the adoption of SiC power modules, thereby driving technological advancements and increasing their integration across high-performance power electronics systems.
The LED lighting segment is expected to have the highest CAGR during the forecast period
Over the forecast period, the LED lighting segment is predicted to witness the highest growth rate, due to demand for power electronics with great efficiency. SiC devices are perfect for LED power supply and drivers because of their enhanced thermal conductivity, increased voltage tolerance, and increased energy efficiency. The need for dependable and small SiC-based solutions increases as energy-efficient lighting becomes more widely used, particularly in commercial and industrial settings.
During the forecast period, the Asia Pacific region is expected to hold the largest market share because of improvements in industrial automation, the growing use of electric cars, and the incorporation of renewable energy. Demand for SiC devices is increasing as a result of significant investments made in high-efficiency power electronics by nations like China, Japan, and South Korea. Government programs encouraging green technology and energy efficiency also hasten market growth, establishing Asia Pacific as a major center for the development and production of SiC semiconductors.
Over the forecast period, the North America region is anticipated to exhibit the highest CAGR, owing to expanding electric vehicle (EV) sector, renewable energy adoption, and advancements in industrial automation. SiC devices offer superior efficiency, thermal performance, and durability compared to traditional silicon, making them ideal for high-power applications. Supportive government policies, increasing investments in smart grid infrastructure, and rising demand for energy-efficient solutions are further accelerating market adoption, positioning North America as a key hub for SiC technology development.
Key players in the market
Some of the key players profiled in the Silicon Carbide Semiconductor Devices Market include Wolfspeed, Inc., STMicroelectronics, Infineon Technologies AG, ON Semiconductor, ROHM Semiconductor, Mitsubishi Electric Corporation, Toshiba Corporation, Littelfuse, Inc., Fuji Electric Co., Ltd., Renesas Electronics Corporation, Microchip Technology Inc., United Silicon Carbide, Inc., Power Integrations, Inc., Global Power Technologies Group, SemiQ Inc., Diodes Incorporated and Alpha and Omega Semiconductor.
In February 2025, Mitsubishi Electric has reached an agreement with HD Renewable Energy, a Taipei-based solar power and battery energy storage systems (BESS) developer, to collaborate on projects aimed at achieving carbon neutrality.
In January 2025, Mitsubishi Electric Corporation, has announced plans to acquire a strategic stake in Bengaluru based Gervigreind Data Science Pvt. Ltd. This collaboration focuses on co developing and marketing no code data analysis and report generation tools that integrate seamlessly with Mitsubishi Electric's factory automation (FA) equipment and GENESIS64(TM) SCADA software-developed by ICONICS, its U.S.
Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.