查看購物車
  • Simplified Chinese
  • English
  • Japanese
封面
市場調查報告書
商品編碼
1787890

2032 年碳化矽設備市場預測：按產品類型、額定電壓、材料、製造方法、功率範圍、應用和地區進行的全球分析

Silicon Carbide Devices Market Forecasts to 2032 - Global Analysis By Product Type, Voltage Rating, Material, Production Method, Power Range, Application and By Geography
出版日期: | 出版商: Stratistics Market Research Consulting | 英文 200+ Pages | 商品交期: 2-3個工作天內

價格

根據 Stratistics MRC 的數據，全球碳化矽 (SiC) 設備市場預計在 2025 年達到 40.2 億美元，到 2032 年將達到 188.8 億美元，預測期內的複合年成長率為 24.7%。

碳化矽元件是公認的先進半導體元件，在高功率、高溫和高頻應用中性能卓越。碳化矽元件具有優異的性能，包括比傳統矽基元件更寬的能隙、更高的熱導率和更強的電場擊穿強度。這些優勢使碳化矽元件成為電動車、電力電子、可再生能源系統和航太應用的理想選擇，使其在惡劣條件下也能更有效率、更可靠地運作。此外，由於碳化矽技術能夠降低能量損耗並提高功率密度，因此它在下一代電子系統中的應用日益普及。

根據美國能源局的情況說明書，SiC 電力電子裝置可承受高達 600°C 的結溫，並可在高電壓、高開關頻率和高電流密度下運行，這些功能可顯著提高電力系統的能源效率。

擴大電動車（EV）的使用

SiC 裝置市場的主要驅動力之一是電動車 (EV) 產業。基於 SiC 的 MOSFET 和二極體擴大應用於電動車動力傳動系統、車載電池充電器 (OBC) 和直流-直流轉換器，因為它們能夠承受比傳統矽元件更高的電壓和溫度，從而提高效率並最大限度地減少能量損失。更長的續航里程、更小的冷卻系統以及快速充電都是這些特性帶來的優勢，也是電動車市場的關鍵賣點。此外，隨著全球電動車產量持續成長以及政府法規日益支持電氣化，預計 SiC 裝置的需求將激增。

製造和材料成本過高

與傳統的矽基元件相比，SiC元件的高製造成本是其廣泛應用的最大障礙之一。 SiC晶體生長困難，加工過程耗時長，且良產量比率，使得生產高品質SiC晶圓的成本顯著提高。例如，SiC晶圓需要高溫化學氣相沉積 (CVD) 工藝，難以獲得無缺陷的晶體結構，而矽晶圓則可以透過成熟且經濟最佳化的基礎設施來實現量產。此外，SiC基板和外延層的成本比矽高出數倍。

與智慧電網和可再生能源系統的整合

隨著全球能源結構向再生能源來源轉型，碳化矽 (SiC) 裝置的定位是提高太陽能逆變器、風力發電機、電池儲能系統和智慧電網應用的功率轉換效率和系統可靠性。尤其是在公用事業規模的裝置中，基於碳化矽的元件可以在更高的電壓和頻率下工作，從而實現更緊湊、更高效的逆變器。此外，智慧電網現代化需要高性能電力電子裝置，以實現快速開關、精確控制和雙向功率流動——而這些都是碳化矽的優勢。清潔能源和電網彈性正獲得政府和能源公司的大量投資，為碳化矽技術在這些領域的發展創造了強勁的環境。

供應鏈薄弱和材料短缺

高純度SiC基板和晶圓仍由少數供應商生產，這使得SiC供應鏈高度受限且集中。貿易限制、自然災害、勞動力短缺或地緣政治不穩定導致的供應中斷，可能會嚴重影響設備可用性和成本。新冠疫情等事件揭露了國際半導體供應鏈的弱點，本已競爭激烈的SiC晶圓市場也可能受到類似中斷的影響。此外，SiC晶圓製造耗能且耗時，難以快速擴大規模，並且容易受到不可預見的需求激增和物流問題的影響。

COVID-19的影響

新冠疫情對碳化矽設備市場產生了許多重大影響。工廠關閉、勞動力短缺和供應鏈中斷造成了短期市場波動，主要影響了碳化矽晶圓和設備的生產和交付。這些限制措施導致工業製造、汽車和其他行業出現瓶頸，並導致正在進行的計劃延期。然而，疫情也加速了向電氣化、可再生能源和數位基礎設施轉變等長期趨勢。隨著經濟開始復甦，對永續技術和穩健供應鏈的日益重視刺激了公共和私營部門對碳化矽製造業的投資，為疫情後的強勁成長鋪平了道路。

預計 SiC MOSFET 市場在預測期內將佔據最大佔有率

預計碳化矽 (SiC) MOSFET 領域將在預測期內佔據最大市場佔有率，這得益於其在高壓、高效應用中的廣泛應用，主要應用於馬達驅動器、工業電源、可再生能源系統和電動車 (EV)。這些電晶體的性能優於傳統的矽基 MOSFET，因為它們具有更快的開關速度、更低的傳導損耗以及更高的工作溫度和電壓。此外，隨著汽車製造商和電力系統設計師日益追求電氣化和能源效率，對碳化矽 MOSFET 的需求也快速成長，使其成為碳化矽元件生態系統的關鍵產品類型。

預計化學氣相沉積（CVD）領域在預測期內的複合年成長率最高

預計化學氣相沉積 (CVD) 領域將在預測期內實現最高成長率。製造先進的 SiC 功率元件（例如 MOSFET 和肖特基二極體）需要在 SiC基板上沉積高品質的外延層，而 CVD 是這項製程的關鍵。此製程可精確控制層厚度、摻雜濃度和均勻性，從而製造工業電力電子、可再生能源系統和電動車所需的高壓、低缺陷裝置。此外，隨著對高性能 SiC 裝置的需求不斷成長，尤其是在汽車和能源領域，CVD 滿足嚴格品質和效率要求的能力也推動了其應用。

佔比最高的地區

預計亞太地區將在預測期內佔據最大的市場佔有率，這得益於其在電力電子、工業自動化和電動車生產領域的強勁表現。在政府的大力支持、快速的工業化進程以及羅姆、三菱電機和意法半導體等領先企業的推動下，中國、日本和韓國等國家在碳化矽設備消費和生產方面處於領先地位。此外，由於國內半導體製造和技術基礎設施投資的不斷增加，亞太地區已成為碳化矽創新、製造和終端用戶應用的主要樞紐，確保了該地區在全球市場佔有率中的持續主導地位。

複合年成長率最高的地區

在預測期內，受國防、航太、可再生能源和電動車技術快速發展的推動，北美預計將呈現最高的複合年成長率。強而有力的政府項目，例如美國《晶片法案》和美國能源部優先支持碳化矽（SiC）等寬能能隙技術的資助項目，正在支持該地區半導體製造的在地化。為了減少對海外供應鏈的依賴，Wolfspeed、安森美半導體和通用電氣等領先公司正在加強其在美國的碳化矽製造能力和研發活動。此外，北美對戰略國防技術和高效能能源基礎設施的日益重視也推動了對碳化矽設備的需求，使其成為預測期內成長最快的地區。

免費客製化服務

訂閱此報告的客戶可享有以下免費自訂選項之一：

  • 公司簡介
    • 對最多三家其他市場參與企業進行全面分析
    • 主要企業的SWOT分析（最多3家公司）
  • 區域細分
    • 根據客戶興趣對主要國家進行的市場估計、預測和複合年成長率（註：基於可行性檢查）
  • 競爭基準化分析
    • 透過產品系列、地理分佈和策略聯盟對主要企業基準化分析

目錄

第1章執行摘要

第2章 前言

  • 概述
  • 相關利益者
  • 調查範圍
  • 調查方法
    • 資料探勘
    • 數據分析
    • 數據檢驗
    • 研究途徑
  • 研究材料
    • 主要研究資料
    • 二手研究資料
    • 先決條件

第3章市場走勢分析

  • 介紹
  • 驅動程式
  • 抑制因素
  • 機會
  • 威脅
  • 產品分析
  • 應用分析
  • 新興市場
  • COVID-19的影響

第4章 波特五力分析

  • 供應商的議價能力
  • 買方的議價能力
  • 替代品的威脅
  • 新進入者的威脅
  • 競爭對手之間的競爭

5. 全球碳化矽設備市場（依產品類型）

  • 介紹
  • SiC MOSFET
  • SiC模組
  • SiC分立元件
  • SiC二極體/肖特基勢壘二極體
  • 其他

6. 全球碳化矽設備市場（依額定電壓）

  • 介紹
  • 最大650V
  • 650V～1200V
  • 1,200V～1,700V
  • 1,700V 或以上

7. 全球碳化矽設備市場（依材料）

  • 介紹
  • 黑碳化矽
  • 綠碳化矽
  • 其他

8. 全球碳化矽設備市場（依生產方法）

  • 介紹
  • 艾奇遜法案
  • 物理蒸氣傳輸（PVT）
  • 化學氣相沉積（CVD）
  • 其他製造方法

9. 全球碳化矽設備市場（依功率範圍）

  • 介紹
  • 低功率（1kW或以下）
  • 中功率（1kW至50kW）
  • 高功率（超過50kW）

第10章 全球碳化矽設備市場（依應用）

  • 介紹
  • 車
    • 電動車（EV）
    • 內燃機汽車（ICE）
    • 混合動力汽車
  • 產業
  • 能源公共產業
    • 可再生能源
    • 配電和輸電
    • 電動車充電基礎設施
  • 航太和國防
  • 家用電子電器
  • 其他

第11章全球碳化矽設備市場（按區域）

  • 介紹
  • 北美洲
    • 美國
    • 加拿大
    • 墨西哥
  • 歐洲
    • 德國
    • 英國
    • 義大利
    • 法國
    • 西班牙
    • 其他歐洲國家
  • 亞太地區
    • 日本
    • 中國
    • 印度
    • 澳洲
    • 紐西蘭
    • 韓國
    • 其他亞太地區
  • 南美洲
    • 阿根廷
    • 巴西
    • 智利
    • 南美洲其他地區
  • 中東和非洲
    • 沙烏地阿拉伯
    • 阿拉伯聯合大公國
    • 卡達
    • 南非
    • 其他中東和非洲地區

第12章 重大進展

  • 協議、夥伴關係、合作和合資企業
  • 收購與合併
  • 新產品發布
  • 業務擴展
  • 其他關鍵策略

第13章：公司概況

  • Infineon Technologies AG
  • NXP Semiconductors
  • Microchip Technology Inc.
  • BASiC Semiconductor Co., Ltd.
  • Renesas Electronics Corporation
  • Fuji Electric Co., Ltd.
  • ON Semiconductor
  • Mitsubishi Electric Corporation
  • Coherent Corp.
  • Wolfspeed, Inc.
  • STMicroelectronics NV
  • ROHM Co., Ltd.
  • Toshiba Corporation
  • GeneSiC Semiconductor Inc.
  • Littelfuse, Inc.
Product Code: SMRC30155

According to Stratistics MRC, the Global Silicon Carbide (SiC) Devices Market is accounted for $4.02 billion in 2025 and is expected to reach $18.88 billion by 2032 growing at a CAGR of 24.7% during the forecast period. Advanced semiconductor components known for their remarkable performance in high-power, high-temperature, and high-frequency applications are silicon carbide (SiC) devices. SiC has a better characteristic than conventional silicon-based devices, including a wider band gap, increased thermal conductivity, and a stronger electric field breakdown. SiC devices are perfect for use in electric vehicles, power electronics, renewable energy systems, and aerospace applications because of these benefits, which allow them to function more effectively and dependably under challenging conditions. Moreover, SiC technology is becoming more and more popular in next-generation electronic systems due to its capacity to lower energy losses and boost power density.

According to a fact sheet by the U.S. Department of Energy, SiC power electronic devices can withstand junction temperatures up to 600 °C and can operate at higher voltage, higher switching frequency, and with greater current density. These capabilities lead to significant energy efficiency gains in power systems.

Market Dynamics:

Driver:

Growing uptake of electric cars (EVs)

One of the major factors propelling the market for SiC devices is the electric vehicle (EV) industry. Because SiC-based MOSFETs and diodes can withstand higher voltages and temperatures than conventional silicon devices, improve efficiency, and minimize energy losses, they are being utilized more and more in EV powertrains, on-board chargers (OBCs), and DC-DC converters. Longer driving ranges, smaller cooling systems, and quicker charging are all benefits of these characteristics that are important selling points in the EV market. Additionally, the demand for SiC devices is anticipated to rise sharply as EV production continues to increase globally and government regulations favor electrification more and more.

Restraint:

Exorbitant production and material expenses

The high cost of manufacturing SiC devices in comparison to conventional silicon-based components is one of the biggest obstacles preventing their widespread use. Because SiC crystals are difficult to grow, processing takes longer, and yields are lower, the cost of producing high-quality SiC wafers is significantly higher. For example, SiC wafers need high-temperature chemical vapor deposition (CVD) and have difficulties in obtaining defect-free crystal structures, whereas silicon wafers are mass-produced on well-established and economically optimized infrastructure. Furthermore, SiC substrates and epitaxial layers continue to be several times more expensive than silicon.

Opportunity:

Integration with smart grid and renewable energy systems

SiC devices are positioned to improve power conversion efficiency and system reliability in solar inverters, wind turbines, battery storage systems, and smart grid applications as the world's energy mix moves toward renewable sources. Particularly in utility-scale installations, SiC-based components can function at higher voltages and frequencies, enabling more compact and effective inverters. Moreover, the modernization of the smart grid necessitates high-performance power electronics that can facilitate fast switching, precise control, and bi-directional power flow-all of which are advantages of SiC. Clean energy and grid resiliency are receiving significant investments from governments and energy companies, which is fostering a strong growth environment for SiC technologies in these fields.

Threat:

Supply chain weaknesses and material scarcity

High-purity SiC substrates and wafers are still produced by a small number of suppliers, making the SiC supply chain still rather constrained and concentrated. The availability and cost of devices can be greatly impacted by disruptions in this supply, which can be brought on by trade restrictions, natural disasters, labor shortages, or geopolitical instability. Events like the COVID-19 pandemic, for instance, revealed weaknesses in international semiconductor supply chains, and the already competitive SiC wafer market may be impacted by similar disruptions. Furthermore, SiC wafer manufacturing's energy-intensive and time-consuming nature prevents quick scale-up, leaving the sector susceptible to unforeseen demand spikes or logistical problems.

Covid-19 Impact:

In the market for silicon carbide (SiC) devices, the COVID-19 pandemic had a mixed but noticeable effect. Factory closures, labor shortages, and supply chain disruptions caused short-term market disruptions that primarily affected the manufacturing and delivery of SiC wafers and devices. These limitations resulted in bottlenecks in industries like industrial manufacturing and the automotive sector as well as delays in ongoing projects. But long-term trends like the move toward electrification, renewable energy, and digital infrastructure-all of which depend on SiC devices to enable high-efficiency power conversion-were also accelerated by the pandemic. The increased emphasis on sustainable technologies and robust supply chains as economies started to recover spurred both public and private investment in SiC manufacturing, paving the way for strong post-pandemic growth.

The SiC MOSFETs segment is expected to be the largest during the forecast period

The SiC MOSFETs segment is expected to account for the largest market share during the forecast period, mainly due to their extensive use in high-voltage, high-efficiency applications like motor drives, industrial power supplies, renewable energy systems, and electric vehicles (EVs). By enabling faster switching speeds, lower conduction losses, and operation at higher temperatures and voltages, these transistors outperform conventional silicon MOSFETs. Moreover, the demand for SiC MOSFETs is rising quickly as automakers and power system designers move more and more toward electrification and energy efficiency, making them the leading product category in the larger SiC device ecosystem.

The chemical vapor deposition (CVD) segment is expected to have the highest CAGR during the forecast period

Over the forecast period, the chemical vapor deposition (CVD) segment is predicted to witness the highest growth rate. In order to produce sophisticated SiC power devices like MOSFETs and Schottky diodes, high-quality epitaxial layers must be deposited on SiC substrates, and CVD is vital to this process. In order to create high-voltage, low-defect devices that are needed in industrial power electronics, renewable energy systems, and electric vehicles, this process enables exact control over layer thickness, doping levels, and uniformity. Additionally, the ability of CVD to meet stringent quality and efficiency requirements is driving its adoption as the need for higher-performance SiC devices increases, particularly in the automotive and energy sectors.

Region with largest share:

During the forecast period, the Asia-Pacific region is expected to hold the largest market share, propelled by its robust presence in power electronics, industrial automation, and the production of electric vehicles. Due to strong government support, quick industrialization, and the presence of significant players like ROHM, Mitsubishi Electric, and STMicroelectronics, nations like China, Japan, and South Korea are at the forefront of SiC device consumption and production. Furthermore, Asia-Pacific is now a major center for SiC innovation, fabrication, and end-user applications due to rising investments in domestic semiconductor manufacturing and technology infrastructure, guaranteeing the region's sustained dominance in the global market share.

Region with highest CAGR:

Over the forecast period, the North America region is anticipated to exhibit the highest CAGR, propelled by quick developments in defense, aerospace, renewable energy, and electric car technologies. Strong government programs, like the U.S. CHIPS Act and Department of Energy funding programs that give priority to wide-bandgap technologies like SiC, help the region localize semiconductor manufacturing. In an effort to lessen dependency on foreign supply chains, major companies like Wolfspeed, ON Semiconductor, and General Electric are increasing their SiC manufacturing capabilities and R&D activities in the United States. Moreover, the demand for SiC devices is also being driven by North America's increasing emphasis on strategic defense technologies and high-efficiency energy infrastructure, which will make it the region with the fastest rate of growth during the forecast period.

Key players in the market

Some of the key players in Silicon Carbide (SiC) Devices Market include Infineon Technologies AG, NXP Semiconductors, Microchip Technology Inc., BASiC Semiconductor Co., Ltd., Renesas Electronics Corporation, Fuji Electric Co., Ltd., ON Semiconductor, Mitsubishi Electric Corporation, Coherent Corp., Wolfspeed, Inc., STMicroelectronics N.V., ROHM Co., Ltd., Toshiba Corporation, GeneSiC Semiconductor Inc. and Littelfuse, Inc.

Key Developments:

In June 2025, NXP Semiconductors has announced the conclusion of the acquisition of Vienna-based TTTech Auto, a pioneer in the development of distinctive safety-critical technologies and middleware for software-defined vehicles (SDVs). The open and modular NXP CoreRide platform and TTTech Auto's MotionWise safety middleware help automakers get past obstacles to software and hardware integration while lowering complexity and development efforts and boosting the scalability and cost-effectiveness needed for next-generation vehicles.

In May 2025, Fuji Electric Co. Ltd (Fuji Electric) has been awarded the contract to supply the complete set of power generation equipment for the Muara Laboh Stage 2 geothermal power project of PT Supreme Energy Muara Laboh (SEML) in West Sumatra, Indonesia. The project has a planned installed capacity of 80 MW and is targeting commercial operations by 2027.

In February 2025, Teradyne and Infineon Technologies AG have announced that they have entered into a strategic agreement to advance power semiconductor test. As part of the agreement, Teradyne will acquire part of Infineon's automated test equipment team in Regensburg, Germany. For its part, Infineon will enter into a service agreement to secure continued manufacturing support as well as enhanced flexibility to respond to internal demand for this specialized test equipment as well as benefit from Teradyne's economy of scale.

Product Types Covered:

  • SiC MOSFETs
  • SiC Modules
  • SiC Discrete Devices
  • SiC Diodes / Schottky Barrier Diodes
  • Other Product Types

Voltage Ratings Covered:

  • Up to 650V
  • 650V-1200V
  • 1200V-1700V
  • Above 1700V

Materials Covered:

  • Black Silicon Carbide
  • Green Silicon Carbide
  • Other Materials

Production Methods Covered:

  • Acheson Process
  • Physical Vapor Transport (PVT)
  • Chemical Vapor Deposition (CVD)
  • Other Production Methods

Power Ranges Covered:

  • Low Power (<1 kW)
  • Medium Power (1 kW-50 kW)
  • High Power (>50 kW)

Applications Covered:

  • Automotive
  • Industrial
  • Energy & Utilities
  • Aerospace & Defense
  • Consumer Electronics
  • Other Applications

Regions Covered:

  • North America
    • US
    • Canada
    • Mexico
  • Europe
    • Germany
    • UK
    • Italy
    • France
    • Spain
    • Rest of Europe
  • Asia Pacific
    • Japan
    • China
    • India
    • Australia
    • New Zealand
    • South Korea
    • Rest of Asia Pacific
  • South America
    • Argentina
    • Brazil
    • Chile
    • Rest of South America
  • Middle East & Africa
    • Saudi Arabia
    • UAE
    • Qatar
    • South Africa
    • Rest of Middle East & Africa

What our report offers:

  • Market share assessments for the regional and country-level segments
  • Strategic recommendations for the new entrants
  • Covers Market data for the years 2024, 2025, 2026, 2028, and 2032
  • Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations)
  • Strategic recommendations in key business segments based on the market estimations
  • Competitive landscaping mapping the key common trends
  • Company profiling with detailed strategies, financials, and recent developments
  • Supply chain trends mapping the latest technological advancements

Free Customization Offerings:

All the customers of this report will be entitled to receive one of the following free customization options:

  • Company Profiling
    • Comprehensive profiling of additional market players (up to 3)
    • SWOT Analysis of key players (up to 3)
  • Regional Segmentation
    • Market estimations, Forecasts and CAGR of any prominent country as per the client's interest (Note: Depends on feasibility check)
  • Competitive Benchmarking
    • Benchmarking of key players based on product portfolio, geographical presence, and strategic alliances

Table of Contents

1 Executive Summary

2 Preface

  • 2.1 Abstract
  • 2.2 Stake Holders
  • 2.3 Research Scope
  • 2.4 Research Methodology
    • 2.4.1 Data Mining
    • 2.4.2 Data Analysis
    • 2.4.3 Data Validation
    • 2.4.4 Research Approach
  • 2.5 Research Sources
    • 2.5.1 Primary Research Sources
    • 2.5.2 Secondary Research Sources
    • 2.5.3 Assumptions

3 Market Trend Analysis

  • 3.1 Introduction
  • 3.2 Drivers
  • 3.3 Restraints
  • 3.4 Opportunities
  • 3.5 Threats
  • 3.6 Product Analysis
  • 3.7 Application Analysis
  • 3.8 Emerging Markets
  • 3.9 Impact of Covid-19

4 Porters Five Force Analysis

  • 4.1 Bargaining power of suppliers
  • 4.2 Bargaining power of buyers
  • 4.3 Threat of substitutes
  • 4.4 Threat of new entrants
  • 4.5 Competitive rivalry

5 Global Silicon Carbide (SiC) Devices Market, By Product Type

  • 5.1 Introduction
  • 5.2 SiC MOSFETs
  • 5.3 SiC Modules
  • 5.4 SiC Discrete Devices
  • 5.5 SiC Diodes / Schottky Barrier Diodes
  • 5.6 Other Product Types

6 Global Silicon Carbide (SiC) Devices Market, By Voltage Rating

  • 6.1 Introduction
  • 6.2 Up to 650V
  • 6.3 650V-1200V
  • 6.4 1200V-1700V
  • 6.5 Above 1700V

7 Global Silicon Carbide (SiC) Devices Market, By Material

  • 7.1 Introduction
  • 7.2 Black Silicon Carbide
  • 7.3 Green Silicon Carbide
  • 7.4 Other Materials

8 Global Silicon Carbide (SiC) Devices Market, By Production Method

  • 8.1 Introduction
  • 8.2 Acheson Process
  • 8.3 Physical Vapor Transport (PVT)
  • 8.4 Chemical Vapor Deposition (CVD)
  • 8.5 Other Production Methods

9 Global Silicon Carbide (SiC) Devices Market, By Power Range

  • 9.1 Introduction
  • 9.2 Low Power (<1 kW)
  • 9.3 Medium Power (1 kW-50 kW)
  • 9.4 High Power (>50 kW)

10 Global Silicon Carbide (SiC) Devices Market, By Application

  • 10.1 Introduction
  • 10.2 Automotive
    • 10.2.1 Electric Vehicles (EVs)
    • 10.2.2 Internal Combustion Engine Vehicles (ICE)
    • 10.2.3 Hybrid Vehicles
  • 10.3 Industrial
  • 10.4 Energy & Utilities
    • 10.4.1 Renewable Energy
    • 10.4.2 Power Distribution & Transmission
    • 10.4.3 EV Charging Infrastructure
  • 10.5 Aerospace & Defense
  • 10.6 Consumer Electronics
  • 10.7 Other Applications

11 Global Silicon Carbide (SiC) Devices Market, By Geography

  • 11.1 Introduction
  • 11.2 North America
    • 11.2.1 US
    • 11.2.2 Canada
    • 11.2.3 Mexico
  • 11.3 Europe
    • 11.3.1 Germany
    • 11.3.2 UK
    • 11.3.3 Italy
    • 11.3.4 France
    • 11.3.5 Spain
    • 11.3.6 Rest of Europe
  • 11.4 Asia Pacific
    • 11.4.1 Japan
    • 11.4.2 China
    • 11.4.3 India
    • 11.4.4 Australia
    • 11.4.5 New Zealand
    • 11.4.6 South Korea
    • 11.4.7 Rest of Asia Pacific
  • 11.5 South America
    • 11.5.1 Argentina
    • 11.5.2 Brazil
    • 11.5.3 Chile
    • 11.5.4 Rest of South America
  • 11.6 Middle East & Africa
    • 11.6.1 Saudi Arabia
    • 11.6.2 UAE
    • 11.6.3 Qatar
    • 11.6.4 South Africa
    • 11.6.5 Rest of Middle East & Africa

12 Key Developments

  • 12.1 Agreements, Partnerships, Collaborations and Joint Ventures
  • 12.2 Acquisitions & Mergers
  • 12.3 New Product Launch
  • 12.4 Expansions
  • 12.5 Other Key Strategies

13 Company Profiling

  • 13.1 Infineon Technologies AG
  • 13.2 NXP Semiconductors
  • 13.3 Microchip Technology Inc.
  • 13.4 BASiC Semiconductor Co., Ltd.
  • 13.5 Renesas Electronics Corporation
  • 13.6 Fuji Electric Co., Ltd.
  • 13.7 ON Semiconductor
  • 13.8 Mitsubishi Electric Corporation
  • 13.9 Coherent Corp.
  • 13.10 Wolfspeed, Inc.
  • 13.11 STMicroelectronics N.V.
  • 13.12 ROHM Co., Ltd.
  • 13.13 Toshiba Corporation
  • 13.14 GeneSiC Semiconductor Inc.
  • 13.15 Littelfuse, Inc.

List of Tables

  • Table 1 Global Silicon Carbide (SiC) Devices Market Outlook, By Region (2024-2032) ($MN)
  • Table 2 Global Silicon Carbide (SiC) Devices Market Outlook, By Product Type (2024-2032) ($MN)
  • Table 3 Global Silicon Carbide (SiC) Devices Market Outlook, By SiC MOSFETs (2024-2032) ($MN)
  • Table 4 Global Silicon Carbide (SiC) Devices Market Outlook, By SiC Modules (2024-2032) ($MN)
  • Table 5 Global Silicon Carbide (SiC) Devices Market Outlook, By SiC Discrete Devices (2024-2032) ($MN)
  • Table 6 Global Silicon Carbide (SiC) Devices Market Outlook, By SiC Diodes / Schottky Barrier Diodes (2024-2032) ($MN)
  • Table 7 Global Silicon Carbide (SiC) Devices Market Outlook, By Other Product Types (2024-2032) ($MN)
  • Table 8 Global Silicon Carbide (SiC) Devices Market Outlook, By Voltage Rating (2024-2032) ($MN)
  • Table 9 Global Silicon Carbide (SiC) Devices Market Outlook, By Up to 650V (2024-2032) ($MN)
  • Table 10 Global Silicon Carbide (SiC) Devices Market Outlook, By 650V-1200V (2024-2032) ($MN)
  • Table 11 Global Silicon Carbide (SiC) Devices Market Outlook, By 1200V-1700V (2024-2032) ($MN)
  • Table 12 Global Silicon Carbide (SiC) Devices Market Outlook, By Above 1700V (2024-2032) ($MN)
  • Table 13 Global Silicon Carbide (SiC) Devices Market Outlook, By Material (2024-2032) ($MN)
  • Table 14 Global Silicon Carbide (SiC) Devices Market Outlook, By Black Silicon Carbide (2024-2032) ($MN)
  • Table 15 Global Silicon Carbide (SiC) Devices Market Outlook, By Green Silicon Carbide (2024-2032) ($MN)
  • Table 16 Global Silicon Carbide (SiC) Devices Market Outlook, By Other Materials (2024-2032) ($MN)
  • Table 17 Global Silicon Carbide (SiC) Devices Market Outlook, By Production Method (2024-2032) ($MN)
  • Table 18 Global Silicon Carbide (SiC) Devices Market Outlook, By Acheson Process (2024-2032) ($MN)
  • Table 19 Global Silicon Carbide (SiC) Devices Market Outlook, By Physical Vapor Transport (PVT) (2024-2032) ($MN)
  • Table 20 Global Silicon Carbide (SiC) Devices Market Outlook, By Chemical Vapor Deposition (CVD) (2024-2032) ($MN)
  • Table 21 Global Silicon Carbide (SiC) Devices Market Outlook, By Other Production Methods (2024-2032) ($MN)
  • Table 22 Global Silicon Carbide (SiC) Devices Market Outlook, By Power Range (2024-2032) ($MN)
  • Table 23 Global Silicon Carbide (SiC) Devices Market Outlook, By Low Power (<1 kW) (2024-2032) ($MN)
  • Table 24 Global Silicon Carbide (SiC) Devices Market Outlook, By Medium Power (1 kW-50 kW) (2024-2032) ($MN)
  • Table 25 Global Silicon Carbide (SiC) Devices Market Outlook, By High Power (>50 kW) (2024-2032) ($MN)
  • Table 26 Global Silicon Carbide (SiC) Devices Market Outlook, By Application (2024-2032) ($MN)
  • Table 27 Global Silicon Carbide (SiC) Devices Market Outlook, By Automotive (2024-2032) ($MN)
  • Table 28 Global Silicon Carbide (SiC) Devices Market Outlook, By Electric Vehicles (EVs) (2024-2032) ($MN)
  • Table 29 Global Silicon Carbide (SiC) Devices Market Outlook, By Internal Combustion Engine Vehicles (ICE) (2024-2032) ($MN)
  • Table 30 Global Silicon Carbide (SiC) Devices Market Outlook, By Hybrid Vehicles (2024-2032) ($MN)
  • Table 31 Global Silicon Carbide (SiC) Devices Market Outlook, By Industrial (2024-2032) ($MN)
  • Table 32 Global Silicon Carbide (SiC) Devices Market Outlook, By Energy & Utilities (2024-2032) ($MN)
  • Table 33 Global Silicon Carbide (SiC) Devices Market Outlook, By Renewable Energy (2024-2032) ($MN)
  • Table 34 Global Silicon Carbide (SiC) Devices Market Outlook, By Power Distribution & Transmission (2024-2032) ($MN)
  • Table 35 Global Silicon Carbide (SiC) Devices Market Outlook, By EV Charging Infrastructure (2024-2032) ($MN)
  • Table 36 Global Silicon Carbide (SiC) Devices Market Outlook, By Aerospace & Defense (2024-2032) ($MN)
  • Table 37 Global Silicon Carbide (SiC) Devices Market Outlook, By Consumer Electronics (2024-2032) ($MN)
  • Table 38 Global Silicon Carbide (SiC) Devices Market Outlook, By Other Applications (2024-2032) ($MN)

Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.