新興非揮發性記憶體：市場佔有率分析、產業趨勢與統計及成長預測（2026-2031 年）

據 Mordor Intelligence 稱，新興的非揮發性記憶體市場在 2025 年的價值為 70.6 億美元，預計到 2031 年將從 2026 年的 83.1 億美元成長到 188 億美元，在預測期（2026-2031 年成長率）內的複合年成長率為 17.72%。

本報告按儲存技術（MRAM、ReRAM 等）、類型（獨立式和嵌入式）、最終用戶（家用電子電器、工業、企業和資料中心、汽車和交通運輸等）、應用程式（高速快取和企業儲存、行動電話和穿戴式裝置等）以及地區進行細分。市場預測以美元計價。

全球新興非揮發性記憶體市場趨勢及洞察

人工智慧資料中心對低延遲、高頻寬儲存的需求激增

運行大規模語言模型的超大規模營運商正面臨「記憶體牆」的挑戰，即DRAM和NAND之間資料傳輸消耗的能量超過了計算本身消耗的能量。新興的非揮發性記憶體提供亞奈秒的存取速度和位元組級定址能力，即使在多次斷電重啟後，訓練資料集也能持久保存，從而降低對高成本的DRAM層的依賴。三星於2024年發布的Gigabit自旋傳輸力矩（STT）MRAM原型機展示了10奈秒的寫入速度，證實了其在延遲方面優於NAND。英特爾Optane於2022年停產，進一步加速了向MRAM和ReRAM層的過渡。隨著變壓器模型中的參數數量接近兆，持久性記憶體對於頻繁的查核點操作至關重要，這促使其在建議系統和詐欺偵測流程中得到更廣泛的應用。

向物聯網和穿戴式裝置的高效記憶體過渡

在電池續航力有限的設備中，鐵電存取記憶體 (FRAM) 和磁性隨機存取記憶體 (MRAM) 正日益被用作串行 NOR 快閃記憶體的替代方案，以消除高寫入電流和「先擦除後寫入」帶來的開銷。 2024 年，意法半導體 (STMicroelectronics) 展示了嵌入式 FRAM 可以將超低功耗微控制器的系統功耗降低 40%。始終線上語音助理和持續健康監測設備需要瞬時啟動和運作模式下零漏電流，這與 FRAM 亞微安培級的待機電流特性相符。歐盟的生態設計法規（強制要求能源效率標籤）也推動了 FRAM 的應用。

20奈米以下製程製程面臨高昂的製造成本和良率挑戰。

新興的非揮發性記憶體堆疊技術採用了專用掩模層和原子層沉積（ALD）工藝，與標準CMOS製程相比，晶圓成本增加了20-30%。極紫外線（EUV）光刻設備單價超過1.5億美元，且集中在少數晶圓廠，限制了供應彈性。早期試生產報告顯示，其缺陷密度比成熟的NAND製程高出2-3倍，這延緩了消費性電子設備成本與NAND記憶體成本持平的進程，並減緩了短期銷售成長。

細分市場分析

磁阻隨機存取記憶體 (MRAM) 在 2025 年的銷售額佔比達到 36.74%，這主要得益於汽車微控制器和工業控制器認證的需求，這些應用需要即時啟動功能。電阻式隨機存取記憶體 (RRAM) 預計到 2031 年將以 20.12% 的年成長率成長，這得益於其雙端單元結構，使其能夠利用現有的高介電常數閘極製造設備。 RRAM 的成本趨勢對那些尋求無需磁沉澱設備即可替代快閃記憶體的無晶圓廠設計人員來說極具吸引力。相變記憶體在汽車黑盒子和航太記錄器等對確定性寫入和抗輻射性能要求極高的應用領域仍然是一個小眾選擇。鐵電隨機存取記憶體 (FRAM) 在超低功耗微控制器和 RFID 標籤中繼續發揮至關重要的作用，其無限的使用壽命彌補了密度方面的限制。諸如 3D XPoint 之類的交叉點架構正在重新評估，以用於邊緣 AI 加速器，這些加速器必須在重新啟動後保留模型權重。三星的 1Gigabit原型表明，與自旋軌道力矩方法相比，自旋傳輸方法設計縮小了延遲差距，進一步鞏固了 MRAM 的優勢。

ReRAM 可在氧化鉭、氧化鉿和氧化鈦等材料之間靈活切換，使代工廠能夠適應特定節點的要求。 Weebit Nano 與 SkyWater 於 2024 年合作，認證 130nm ReRAM 用於抗輻射加固的航太應用，證明了其適用於特殊節點。鐵電存取記憶體 (FRAM) 的耐久性超過 10^14 次循環，在智慧電錶的部署中繼續發揮至關重要的作用，智慧電錶可以每隔幾秒鐘記錄一次感測器數據，持續數十年。混合設計，例如三星的 Z-NAND，將 MRAM 緩衝器與高密度 NAND 結合，以提高寫入密集型工作負載下的耐久性。

到2025年，獨立模組將佔出貨量的63.12%，並正被應用於企業儲存陣列和工業控制器等對現場可更換封裝要求較高的應用領域。受系統晶片的趨勢推動，嵌入式非揮發性記憶體預計到2031年將以18.67%的年均成長率成長。台積電的22nm eMRAM和格羅方德的12nm eMRAM平台支援韌體、運作資料和神經網路權重的片上存儲。隨著家用電子電器中常開感測技術的普及，面向嵌入式應用的非揮發性記憶體新興市場預計將快速擴張。

在儲存區域網路和工業PLC等對容量和可維護性要求極高的領域，獨立模組仍然是首選。 Everspin的256兆位元MRAM模組面向快取層，在這些應用中，斷電保護和無限壽命比更高的成本更為重要。雖然嵌入式產品的認證週期較長，因為代工廠需要檢驗整個製程窗口內的熱穩定性，但基板面積和組裝成本的降低正在推動這一轉變。

區域分析

預計到2025年，亞太地區將佔全球銷售額的40.35%，並在2031年之前以19.82%的年均成長率成長。該地區受益於三星和SK海力士在韓國的試點生產線、台積電在台灣的22nm eMRAM以及中國政府主導的旨在實現電阻式隨機存取記憶體（RRAM）本地化生產的計劃。緊密相連的家用電子電器和汽車供應鏈正在推動從原型到量產的良性循環。亞太地區電池式電動車（BEV）的日益普及進一步推動了新興的非揮發性記憶體市場的發展，因為電動車需要耐高溫、高耐久性的儲存設備。

在北美，抗輻射加固記憶體正被開發用於航太和國防領域，GlobalFoundries 的 12nm eMRAM 已被應用於汽車和工業微控制器。美國的《晶片與科學法案》透過向國內晶圓廠撥款，提高了國防相關企業的供應穩定性。在歐洲，430 億歐元的《晶片與科學法案》正被用於擴大半導體產能，英飛凌和義法半導體正在進行嵌入式 MRAM 在汽車電氣化的示範實驗。由於歐洲嚴格的功能安全標準有利於 MRAM 的發展，新興的非揮發性記憶體市場佔有率正在擴大。

在南美洲、中東和非洲，MRAM技術的部署仍處於早期階段，主要集中在智慧電網測量、遠端油氣監測和行動支付領域。沙烏地阿拉伯的NEOM專案正在展示基於MRAM的能源管理資料記錄器，而非洲的部署則專注於需要低功耗、高耐用性記憶體的離網太陽能控制器。

其他好處：

• Excel格式的市場預測（ME）表
• 3個月的分析師支持

目錄

第1章：引言

• 研究假設和市場定義
• 調查範圍

第2章：調查方法

第3章執行摘要

第4章 市場狀況

• 市場概覽
• 市場促進因素
  • 人工智慧資料中心對低延遲、高頻寬儲存的需求正在激增。
  • 向物聯網和穿戴式裝置的高效記憶體過渡
  • 汽車電氣化和高級駕駛輔助系統 (ADAS) 需要能夠承受高溫且具有高耐久性的自然體積車輛 (NVM)。
  • 28nm 或更小製程的嵌入式 MRAM 和 ReRAM 獲得代工廠認證後，即可取代快閃記憶體。
  • 市場對記憶體內運算的需求日益成長，旨在降低邊緣人工智慧晶片中資料傳輸相關的能耗。
  • 日本政府為確保半導體主權而採取的優惠措施，正在推動新興的非揮發性記憶體（NVM）製造在日本的擴張。
• 市場限制因素
  • 20奈米以下製程製程面臨高昂的製造成本和良率挑戰。
  • 控制器介面和軟體堆疊缺乏統一標準
  • 設備層面的耐久性差異限制了高寫入工作負載。
  • 供應鏈對關鍵磁性材料和稀土元素材料的依賴性
• 產業價值鏈分析
• 宏觀經濟因素的影響
• 監理情勢
• 技術展望
• 波特五力分析

第5章 市場規模與成長預測

• 透過儲存技術
  • 磁阻式隨機存取記憶體（MRAM）
  • 阻變式隨機存取記憶體（ReRAM）
  • 相變記憶體（PCM）
  • 鐵電存取記憶體（FRAM）
  • 3D XPoint/其他新興技術
• 按類型
  • 獨立型
  • 嵌入式
• 按最終用戶行業分類
  • 家用電子產品
  • 產業
  • 企業和資料中心
  • 汽車和運輸業
  • 醫療保健和醫療設備
  • 航太/國防
  • 其他終端用戶產業
• 透過使用
  • 快取記憶體和企業存儲
  • 行動電話和穿戴式裝置
  • 工業和汽車控制
  • 大容量儲存設備
  • 嵌入式微控制器和智慧卡
  • 其他用途
• 按地區
  • 北美洲
    • 美國
    • 加拿大
    • 墨西哥
  • 南美洲
    • 巴西
    • 阿根廷
    • 其他南美國家
  • 歐洲
    • 德國
    • 英國
    • 法國
    • 義大利
    • 西班牙
    • 俄羅斯
    • 其他歐洲國家
  • 亞太地區
    • 中國
    • 日本
    • 印度
    • 韓國
    • 澳洲
    • 其他亞太國家
  • 中東和非洲
    • 中東
      • 沙烏地阿拉伯
      • 阿拉伯聯合大公國
      • 土耳其
      • 其他中東國家
    • 非洲
      • 南非
      • 奈及利亞
      • 埃及
      • 其他非洲國家

第6章 競爭情勢

• 市場集中度
• 策略趨勢
• 市佔率分析
• 公司簡介
  • Samsung Electronics Co. Ltd.
  • SK Hynix Inc.
  • Micron Technology Inc.
  • Intel Corporation
  • Western Digital Corporation
  • Kioxia Holdings Corporation
  • Everspin Technologies Inc.
  • Crossbar Inc.
  • Weebit Nano Ltd.
  • Nantero Inc.
  • Fujitsu Ltd.
  • Texas Instruments Incorporated
  • Infineon Technologies AG
  • STMicroelectronics NV
  • Renesas Electronics Corporation
  • TSMC（Taiwan Semiconductor Manufacturing Company Limited）
  • GlobalFoundries Inc.
  • United Microelectronics Corporation
  • Avalanche Technology Inc.
  • Adesto Technologies Corporation
  • Toshiba Electronic Devices and Storage Corporation
  • Winbond Electronics Corporation
  • NXP Semiconductors NV

第7章 市場機會與未來展望

According to Mordor Intelligence, the emerging non-volatile memory market size was valued at USD 7.06 billion in 2025 and estimated to grow from USD 8.31 billion in 2026 to reach USD 18.8 billion by 2031, at a CAGR of 17.72% during the forecast period (2026-2031).

This report is Segmented by Memory Technology (MRAM, Reram, and More), Type (Stand-Alone and Embedded), End-User (Consumer Electronics, Industrial, Enterprise and Data Center, Automotive and Transportation, and More), Application (Cache Memory and Enterprise Storage, Mobile Phones and Wearables, and More), and Geography. The Market Forecasts are Provided in Terms of Value (USD).

Global Emerging Non-Volatile Memory Market Trends and Insights

Exploding Demand for Low-Latency, High-Bandwidth Storage in AI Data Centers

Hyperscale operators running large language models are hitting the memory wall, where the energy used to shuttle data between DRAM and NAND exceeds the energy used for computation. Emerging non-volatile memory supplies sub-100-nanosecond access and byte-addressability, allowing training datasets to persist in place through power cycles and cutting reliance on costly DRAM tiers. Samsung's 1-gigabit spin-transfer-torque MRAM prototype demonstrated 10-nanosecond writes in 2024, validating the latency advantage over NAND. The discontinuation of Intel Optane in 2022 intensified the push toward MRAM and ReRAM tiers. As transformer models scale past one trillion parameters, persistent memory becomes essential for frequent checkpointing, boosting adoption across recommender systems and fraud-detection pipelines.

Shift Toward Energy-Efficient Memory for IoT and Wearable Devices

Battery-constrained devices are replacing serial NOR flash with ferroelectric RAM and MRAM to remove high write currents and erase-before-write overhead. STMicroelectronics disclosed in 2024 that embedded FRAM lowered system energy by 40% in ultra-low-power microcontrollers. Always-on voice assistants and continuous health monitors need instant wake-up and zero standby leakage, benefits that align with FRAM's sub-microampere standby current. European Union Ecodesign rules, which mandate energy-efficiency labeling, are reinforcing adoption.

High Fabrication Cost and Yield Challenges at Sub-20 nm Nodes

Emerging non-volatile memory stacks incorporate specialized mask layers and atomic-layer deposition steps, which increase wafer cost by 20%-30% over baseline CMOS. Extreme-ultraviolet scanners, which exceed USD 150 million each, concentrate capacity at a handful of fabs, limiting supply elasticity. Early pilot runs report defect densities two to three times higher than mature NAND processes, postponing cost parity in consumer devices and tempering near-term unit growth.

Other drivers and restraints analyzed in the detailed report include:

1. Automotive Electrification and ADAS Requiring High-Temperature, High-Endurance NVM
2. Foundry Qualification of Embedded MRAM Below 28 nm Enables Flash Replacement
3. Lack of Unified Standards for Controller Interfaces and Software Stacks

For complete list of drivers and restraints, kindly check the Table Of Contents.

Segment Analysis

Magnetoresistive RAM accounted for 36.74% of 2025 revenue, supported by qualification in automotive microcontrollers and industrial controllers that demand instant-on capability. Resistive RAM is forecast to grow at a 20.12% annual rate to 2031, as its two-terminal cell structure leverages existing high-k gate tooling. ReRAM's cost trajectory appeals to fabless designers seeking drop-in flash replacements without the need for magnetic-deposition equipment. Phase-change memory remains a niche option in automotive black boxes and aerospace recorders, which value deterministic writes and radiation tolerance. Ferroelectric RAM retains a role in ultra-low-power microcontrollers and RFID tags, where unlimited endurance offsets density limitations. Cross-point architectures such as 3D XPoint are being repositioned for edge-AI accelerators that must preserve model weights across reboots. Samsung's 1-gigabit prototype verifies that spin-transfer designs are narrowing the latency gap with spin-orbit-torque variants, reinforcing MRAM's dominance.

ReRAM's flexibility in switching materials, such as tantalum oxide, hafnium oxide, and titanium oxide, allows foundries to adapt to node-specific requirements. Weebit Nano's 2024 partnership with SkyWater to qualify 130-nm ReRAM for radiation-hardened space applications shows suitability for specialty nodes. Ferroelectric RAM's endurance, exceeding 10^14 cycles, keeps it relevant in smart-meter deployments, where it logs sensor data every few seconds over multi-decade lifetimes. Hybrid designs such as Samsung's Z-NAND combine MRAM buffers with high-density NAND to extend endurance in write-intensive workloads.

Stand-alone modules contributed 63.12% of 2025 shipments, serving enterprise storage arrays and industrial controllers that value field-replaceable packages. Embedded non-volatile memory is projected to grow at a 18.67% annual rate through 2031, driven by system-on-chip designers eliminating external serial flash to reduce latency and lower power budgets. TSMC's 22-nm eMRAM and GlobalFoundries' 12-nm eMRAM platforms allow firmware, calibration data, and neural-network weights to reside on-die. The emerging non-volatile memory market size for embedded applications is projected to expand rapidly as consumer electronics adopt always-on sensing.

Stand-alone modules remain the preferred choice where capacity and serviceability are crucial, such as in storage-area networks and industrial PLCs. Everspin's 256-megabit MRAM module targets cache tiers where power-fail protection and unlimited endurance outweigh cost premiums. Qualification cycles for embedded variants are longer because foundries must validate thermal stability across the entire process window; however, the savings in board area and assembly cost reinforce the migration trajectory.

Complete Report Scope:

• By Memory Technology
  • Magnetoresistive RAM (MRAM)
  • Resistive RAM (ReRAM)
  • Phase-Change Memory (PCM)
  • Ferroelectric RAM (FRAM)
  • 3D XPoint / Other Emerging
• By Type
  • Stand-Alone
  • Embedded
• By End-user Industry
  • Consumer Electronics
  • Industrial
  • Enterprise and Data Center
  • Automotive and Transportation
  • Healthcare and Medical Devices
  • Aerospace and Defense
  • Other End-user Industries
• By Application
  • Cache Memory and Enterprise Storage
  • Mobile Phones and Wearables
  • Industrial and Automotive Control
  • Mass Storage
  • Embedded MCU and Smart Cards
  • Other Applications
• By Geography
  • North America
    • United States
    • Canada
    • Mexico
  • South America
    • Brazil
    • Argentina
    • Rest of South America
  • Europe
    • Germany
    • United Kingdom
    • France
    • Italy
    • Spain
    • Russia
    • Rest of Europe
  • Asia Pacific
    • China
    • Japan
    • India
    • South Korea
    • Australia
    • Rest of Asia Pacific
  • Middle East and Africa
    • Middle East
      • Saudi Arabia
      • United Arab Emirates
      • Turkey
      • Rest of Middle East
    • Africa
      • South Africa
      • Nigeria
      • Egypt
      • Rest of Africa

Geography Analysis

The Asia Pacific region held 40.35% of 2025 revenue and is projected to grow at an annual rate of 19.82% through 2031. The region benefits from Samsung and SK Hynix pilot lines in South Korea, TSMC's 22-nm eMRAM in Taiwan, and state-backed Chinese programs to localize resistive RAM production. Dense consumer-electronics and automotive supply chains reinforce a virtuous cycle of prototype and volume ramp. The emerging non-volatile memory market is further bolstered by the Asia-Pacific's growing adoption of battery-electric vehicles, which require high-temperature, high-endurance storage.

North America pursues radiation-hardened memory for aerospace and defense, with GlobalFoundries' 12-nm eMRAM serving automotive and industrial microcontrollers. The U.S. CHIPS and Science Act allocates funds to domestic fabs, thereby enhancing supply security for defense contractors. Europe leverages the EUR 43 billion Chips Act to expand semiconductor capacity; Infineon and STMicroelectronics are piloting embedded MRAM for automotive electrification. The emerging non-volatile memory market share in Europe rises due to stringent functional-safety standards that favor MRAM.

South America, the Middle East, and Africa remain at early adoption stages, focusing on smart grid metering, oil and gas telemetry, and mobile payments. Saudi Arabia's NEOM project is piloting MRAM-based data loggers for energy management, while African deployments focus on off-grid solar controllers that require low-power, high-endurance memory.

1. Samsung Electronics Co. Ltd.
2. SK Hynix Inc.
3. Micron Technology Inc.
4. Intel Corporation
5. Western Digital Corporation
6. Kioxia Holdings Corporation
7. Everspin Technologies Inc.
8. Crossbar Inc.
9. Weebit Nano Ltd.
10. Nantero Inc.
11. Fujitsu Ltd.
12. Texas Instruments Incorporated
13. Infineon Technologies AG
14. STMicroelectronics N.V.
15. Renesas Electronics Corporation
16. TSMC (Taiwan Semiconductor Manufacturing Company Limited)
17. GlobalFoundries Inc.
18. United Microelectronics Corporation
19. Avalanche Technology Inc.
20. Adesto Technologies Corporation
21. Toshiba Electronic Devices and Storage Corporation
22. Winbond Electronics Corporation
23. NXP Semiconductors N.V.

Additional Benefits:

• The market estimate (ME) sheet in Excel format
• 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

• 1.1 Study Assumptions and Market Definition
• 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE

• 4.1 Market Overview
• 4.2 Market Drivers
  • 4.2.1 Exploding demand for low-latency, high-bandwidth storage in AI data centers
  • 4.2.2 Shift toward energy-efficient memory for IoT and wearable devices
  • 4.2.3 Automotive electrification and ADAS requiring high-temperature, high-endurance NVM
  • 4.2.4 Foundry qualification of embedded MRAM and ReRAM below 28 nm enables flash replacement
  • 4.2.5 Market pull for in-memory compute to cut data-movement energy in edge AI chips
  • 4.2.6 Government semiconductor-sovereignty incentives expanding domestic emerging NVM fabs
• 4.3 Market Restraints
  • 4.3.1 High fabrication cost and yield challenges at sub-20 nm nodes
  • 4.3.2 Lack of unified standards for controller interfaces and software stacks
  • 4.3.3 Device-level endurance variability limiting high-write workloads
  • 4.3.4 Supply-chain dependence on critical magnetic and rare-earth materials
• 4.4 Industry Value Chain Analysis
• 4.5 Impact of Macroeconomic Factors
• 4.6 Regulatory Landscape
• 4.7 Technological Outlook
• 4.8 Porter's Five Forces Analysis
  • 4.8.1 Bargaining Power of Suppliers
  • 4.8.2 Bargaining Power of Buyers
  • 4.8.3 Threat of New Entrants
  • 4.8.4 Threat of Substitutes
  • 4.8.5 Intensity of Competitive Rivalry

5 MARKET SIZE AND GROWTH FORECASTS (VALUES)

• 5.1 By Memory Technology
  • 5.1.1 Magnetoresistive RAM (MRAM)
  • 5.1.2 Resistive RAM (ReRAM)
  • 5.1.3 Phase-Change Memory (PCM)
  • 5.1.4 Ferroelectric RAM (FRAM)
  • 5.1.5 3D XPoint / Other Emerging
• 5.2 By Type
  • 5.2.1 Stand-Alone
  • 5.2.2 Embedded
• 5.3 By End-user Industry
  • 5.3.1 Consumer Electronics
  • 5.3.2 Industrial
  • 5.3.3 Enterprise and Data Center
  • 5.3.4 Automotive and Transportation
  • 5.3.5 Healthcare and Medical Devices
  • 5.3.6 Aerospace and Defense
  • 5.3.7 Other End-user Industries
• 5.4 By Application
  • 5.4.1 Cache Memory and Enterprise Storage
  • 5.4.2 Mobile Phones and Wearables
  • 5.4.3 Industrial and Automotive Control
  • 5.4.4 Mass Storage
  • 5.4.5 Embedded MCU and Smart Cards
  • 5.4.6 Other Applications
• 5.5 By Geography
  • 5.5.1 North America
    • 5.5.1.1 United States
    • 5.5.1.2 Canada
    • 5.5.1.3 Mexico
  • 5.5.2 South America
    • 5.5.2.1 Brazil
    • 5.5.2.2 Argentina
    • 5.5.2.3 Rest of South America
  • 5.5.3 Europe
    • 5.5.3.1 Germany
    • 5.5.3.2 United Kingdom
    • 5.5.3.3 France
    • 5.5.3.4 Italy
    • 5.5.3.5 Spain
    • 5.5.3.6 Russia
    • 5.5.3.7 Rest of Europe
  • 5.5.4 Asia Pacific
    • 5.5.4.1 China
    • 5.5.4.2 Japan
    • 5.5.4.3 India
    • 5.5.4.4 South Korea
    • 5.5.4.5 Australia
    • 5.5.4.6 Rest of Asia Pacific
  • 5.5.5 Middle East and Africa
    • 5.5.5.1 Middle East
      • 5.5.5.1.1 Saudi Arabia
      • 5.5.5.1.2 United Arab Emirates
      • 5.5.5.1.3 Turkey
      • 5.5.5.1.4 Rest of Middle East
    • 5.5.5.2 Africa
      • 5.5.5.2.1 South Africa
      • 5.5.5.2.2 Nigeria
      • 5.5.5.2.3 Egypt
      • 5.5.5.2.4 Rest of Africa

6 COMPETITIVE LANDSCAPE

• 6.1 Market Concentration
• 6.2 Strategic Moves
• 6.3 Market Share Analysis
• 6.4 Company Profiles (includes Global level Overview, Market level overview, Core Segments, Financials as available, Strategic Information, Market Rank/Share for key companies, Products and Services, and Recent Developments)
  • 6.4.1 Samsung Electronics Co. Ltd.
  • 6.4.2 SK Hynix Inc.
  • 6.4.3 Micron Technology Inc.
  • 6.4.4 Intel Corporation
  • 6.4.5 Western Digital Corporation
  • 6.4.6 Kioxia Holdings Corporation
  • 6.4.7 Everspin Technologies Inc.
  • 6.4.8 Crossbar Inc.
  • 6.4.9 Weebit Nano Ltd.
  • 6.4.10 Nantero Inc.
  • 6.4.11 Fujitsu Ltd.
  • 6.4.12 Texas Instruments Incorporated
  • 6.4.13 Infineon Technologies AG
  • 6.4.14 STMicroelectronics N.V.
  • 6.4.15 Renesas Electronics Corporation
  • 6.4.16 TSMC (Taiwan Semiconductor Manufacturing Company Limited)
  • 6.4.17 GlobalFoundries Inc.
  • 6.4.18 United Microelectronics Corporation
  • 6.4.19 Avalanche Technology Inc.
  • 6.4.20 Adesto Technologies Corporation
  • 6.4.21 Toshiba Electronic Devices and Storage Corporation
  • 6.4.22 Winbond Electronics Corporation
  • 6.4.23 NXP Semiconductors N.V.

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK

• 7.1 White-Space and Unmet-Need assessment