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市場調查報告書
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1910504

功率半導體：市場佔有率分析、產業趨勢與統計、成長預測（2026-2031）

Power Semiconductor - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2026 - 2031)
出版日期: | 出版商: Mordor Intelligence | 英文 120 Pages | 商品交期: 2-3個工作天內

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簡介目錄

2025年功率半導體市場價值為568.7億美元，預計到2031年將達到782.5億美元，而2026年為599.8億美元。

預計在預測期（2026-2031 年）內，複合年成長率將達到 5.46%。

功率半導體市場-IMG1

儘管其他行業週期性放緩，但電動車、可再生能源系統和數據密集型電子產品對高效功率轉換的強勁需求，支撐了功率半導體市場保持穩健成長。寬能能隙（WBG）材料，主要是碳化矽（SiC）和氮化鎵（GaN），由於其在高壓和高頻條件下優於矽的性能，因此價格較高。汽車電氣化推動了市場規模的成長，而太陽能發電加儲能系統的應用、5G基礎設施的部署以及工廠自動化程度的提高，則推動了市場的快速成長。美國《晶片和半導體產品法案》（CHIPS Act）和歐洲《晶片和半導體產品法案》（CHIPS Act）等區域供應鏈政策正在推動國內製造業投資，而亞太地區則憑藉其端到端的製造規模優勢，保持主導地位。

全球功率半導體市場趨勢及展望

電動車和充電基礎設施的需求激增

電動車越來越依賴碳化矽（SiC）MOSFET來提高驅動效率和加快充電速度。汽車製造商在向800V系統過渡的過程中，指定使用SiC來降低逆變器損耗。而像安森美半導體（ON Semiconductor）與大眾汽車（Volkswagen）達成的、由FORVIA支持的垂直整合晶片到模組（C2M）解決方案，則提供了成熟的解決方案，確保了供應並降低了分配風險。並聯直流快速充電樁的部署需要8kW至1MW的功率模組，這實際上使每輛車的SiC需求加倍。車規級產量比率仍然是一個挑戰，這促使整合元件製造商（IDM）提高自身的基板製造能力，以穩定成本曲線並保護利潤率。

5G基地台的分佈

在6GHz以下和毫米波頻段，GaN高電子移動性電晶體比LDMOS具有更高的增益和效率。隨著通訊業者為應對不斷上漲的電力成本而提高小型基地台密度，預計未來10年內GaN的出貨量將成長四倍。恩智浦半導體（NXP）提供將Si LDMOS和GaN晶粒整合到多晶片大規模MIMO模組中的解決方案，這些模組整合了天線陣列並簡化了散熱設計。功率半導體供應商正在添加燒結晶片黏接材料，以解決超過225°C的熱點問題。隨著通訊業日益關注整體擁有成本（TCO），效率的逐步提升將轉化為營運成本（OPEX）的降低，從而鞏固GaN在下一代部署中的應用。

矽晶圓供應週期

目前晶圓總需求已超過核定產能，記憶體供應商的庫存削減正在影響近期採購行為。地緣政治摩擦推高了晶圓廠建設成本，而缺水地區的用水限制則限制了新建工廠。來自中國新參與企業的價格競爭正在擠壓整個供應鏈的利潤空間。前端設備訂單顯示出復甦跡象，但個人電腦和智慧型手機終端市場的疲軟限制了銷售成長，這反映出市場存在結構性而非週期性失衡。

細分市場分析

到2025年，功率積體電路（PIC）將成為功率半導體市場規模的重要組成部分，預計到2031年將以6.02%的複合年成長率成長。汽車電池管理單元需要多軌穩壓器和功能安全診斷功能，而這些功能都整合在緊湊的PMIC封裝中。英飛凌符合ISO 26262標準的OPTIREG TLF35585支援安全相關的電控系統，體現了單晶片電源管理的發展趨勢。分立元件仍然是高電流路徑的關鍵組成部分，佔44.60%的收入佔有率。然而，隨著設計人員在空間受限的子系統中傾向於選擇成本最佳化的模組或IC解決方案，分立產品的佔有率正在下降。

供應商的藍圖正在將GaN或SiC晶粒整合到智慧功率模組中，這些模組整合了閘極驅動、感測和保護功能，以加快逆變器和充電器組件的上市速度。模組整合使那些沒有自有封裝技術的中型工業和住宅能源客戶受益。同時，消費性電子產品ODM廠商持續採購分離式MOSFET用於轉接器設計，以利用基板級柔軟性和價格優勢。分離式、模組和積體電路形式的共存豐富了功率半導體市場，實現了可自訂的性能和成本權衡。

區域分析

亞太地區預計到2025年將佔據功率半導體市場51.35%的佔有率，並在2031年之前保持6.74%的複合年成長率。中國在國家補貼和垂直整合的供應鏈支持下，主導碳化矽（SiC）和氮化鎵（GaN）產能的擴張。印度正在快速推進一個投資760億盧比的OSAT（外包半導體組裝測試）園區項目，目標產能為每日1500萬片，並表明其有意在國內進行組裝。台灣和韓國分別在先進封裝和記憶體領域保持主導，而日本則在上游材料領域鞏固其主導地位。

在北美，500億美元的《晶片製造和生產法案》（CHIPS Act）激勵措施正鼓勵沃爾夫斯皮德（Wolfspeed）、博世（Bosch）等國際公司改造現有工廠並​​新建工廠。汽車、國防和資料中心產業的集中發展正在集中需求，並提高在地採購的要求。 SEMI預測，到2027年，區域製造設備投資將加倍，達到247億美元，凸顯了長期規模擴張的趨勢。

歐洲將利用汽車產業與可再生能源政策的合作，促進碳化矽（SiC）和氮化鎵（GaN）技術的應用。德國核准德勒斯登工廠（投資50億歐元）就是一個公私合營提高能源自給率的良好範例。法國和義大利將提供額外的津貼方案，以維持尖端組件和基板技術的發展。中東、非洲和拉丁美洲等注重成本的新興市場正積極採用成熟的矽平台，同時逐步試行白光發光二極體（WBG）技術，用於大規模太陽能發電和鐵路電氣化。

其他福利：

  • Excel格式的市場預測（ME）表
  • 3個月的分析師支持

目錄

第1章 引言

  • 研究假設和市場定義
  • 調查範圍

第2章調查方法

第3章執行摘要

第4章 市場情勢

  • 市場概覽
  • 市場促進因素
    • 電動車和充電基礎設施的需求激增
    • 5G基地台的分佈
    • 可再生能源主導的電力轉型成長
    • 工業自動化和電機驅動裝置升級
    • 高空平台系統與全電動飛機動力傳動系統
    • 亞洲兩輪和三輪電動車的快速充電架構
  • 市場限制
    • 矽晶圓供應週期
    • 寬能能隙（WBG）裝置高成本/設計複雜
    • 高密度電動車逆變器的熱限制
    • 氮化鎵外延設備的出口限制
  • 價值/供應鏈分析
  • 監管環境
  • 技術展望
  • 波特五力分析
    • 供應商的議價能力
    • 買方的議價能力
    • 新進入者的威脅
    • 競爭對手之間的競爭
    • 替代品的威脅
  • 投資分析

第5章 市場規模與成長預測

  • 按組件
    • 離散的
      • 整流器
      • 雙極
      • MOSFET
      • IGBT
      • 其他分立元件（閘流體、HEMT 等）
    • 模組
      • 閘流體模組
      • IGBT模組
      • MOSFET模組
      • 智慧型電源模組（IPM）
    • 功率積體電路
      • PMIC（多通道）
      • 開關穩壓器（AC/DC、DC/DC、隔離式/非隔離式）
      • 線性穩壓器
      • 電池管理積體電路
      • 其他電源積體電路
  • 材料
    • 矽
    • 碳化矽（SiC）
    • 氮化鎵（GaN）
    • 其他
  • 按最終用戶行業分類
    • 車
    • 家用電子電器和家用電器
    • 資訊與通訊科技（ICT）
    • 工業和製造業
    • 能源與電力（可再生能源、電網）
    • 航太/國防
    • 醫療設備
    • 其他（鐵路、船）
  • 按地區
    • 北美洲
      • 美國
      • 加拿大
      • 墨西哥
    • 歐洲
      • 德國
      • 法國
      • 英國
      • 義大利
      • 其他歐洲地區
    • 亞太地區
      • 中國
      • 日本
      • 韓國
      • 印度
      • 亞太其他地區
    • 南美洲
      • 巴西
      • 阿根廷
      • 其他南美洲
    • 中東
      • 以色列
      • 沙烏地阿拉伯
      • 阿拉伯聯合大公國
      • 其他中東地區
    • 非洲
      • 南非
      • 埃及
      • 其他非洲地區

第6章 競爭情勢

  • 市場集中度
  • 策略趨勢
  • 市佔率分析
  • 公司簡介
    • Infineon Technologies AG
    • Texas Instruments Incorporated
    • Qorvo Inc.
    • STMicroelectronics NV
    • NXP Semiconductors NV
    • ON Semiconductor Corporation
    • Renesas Electronics Corporation
    • Broadcom Inc.
    • Toshiba Corporation
    • Mitsubishi Electric Corporation
    • Fuji Electric Co., Ltd.
    • Semikron Danfoss GmbH and Co. KG
    • Wolfspeed Inc.
    • ROHM Co., Ltd.
    • Vishay Intertechnology Inc.
    • Nexperia BV
    • Alpha and Omega Semiconductor Ltd.
    • Magnachip Semiconductor Corp.
    • Microchip Technology Inc.
    • Littelfuse Inc.
    • Navitas Semiconductor Corp.
    • Power Integrations Inc.
    • Monolithic Power Systems Inc.

第7章 市場機會與未來展望

簡介目錄
Product Code: 63819

The power semiconductor market was valued at USD 56.87 billion in 2025 and estimated to grow from USD 59.98 billion in 2026 to reach USD 78.25 billion by 2031, at a CAGR of 5.46% during the forecast period (2026-2031).

Power Semiconductor - Market - IMG1

Strong demand for efficient power conversion across electric vehicles, renewable energy systems, and data-intensive electronics keeps the power semiconductor market resilient even as cyclical slowdowns emerge elsewhere. Wide-bandgap (WBG) materials-chiefly silicon carbide (SiC) and gallium nitride (GaN)-command premium pricing because they outperform silicon in high-voltage and high-frequency conditions. Automotive electrification anchors volume, yet rapid growth stems from solar-plus-storage installations, 5G infrastructure rollouts, and factory automation upgrades. Regional supply-chain policies such as the U.S. CHIPS Act and the European Chips Act intensify domestic fabrication investments, while the Asia Pacific leverages its end-to-end manufacturing scale to maintain leadership.

Global Power Semiconductor Market Trends and Insights

Surging Demand for EVs and Charging Infrastructure

Electric vehicles increasingly rely on SiC MOSFETs that raise drivetrain efficiency and shorten charging times. Automakers shifting to 800 V systems specify SiC to trim inverter losses, evidenced by FORVIAs, such as onsemi's agreement with Volkswagen, secure vertically integrated chip-to-module deliveries, mitigating allocation risks. Parallel DC fast-charger roll-outs require 8 kW to 1 MW power blocks, effectively doubling SiC demand from vehicle content alone. Automotive-grade yields stay challenging, so IDMs add captive substrate capacity to stabilize cost curves and safeguard margins.

Proliferation of 5G Base-Stations

GaN high-electron-mobility transistors deliver higher gain and efficiency than LDMOS at sub-6 GHz and mmWave frequencies. Small-cell densification pushes GaN shipments to quadruple by decade-end as operators combat escalating energy bills. NXP couples Si LDMOS with GaN die in multichip massive-MIMO modules that integrate antenna arrays and simplify thermal design. Power semiconductor suppliers add sintered die-attach materials to cope with hot-spot temperatures above 225 °C. The telecom sector's focus on total-cost-of-ownership converts incremental efficiency gains into reduced opex, cementing GaN adoption in next-phase rollouts.

Silicon Wafer Supply Tightness Cycles

Total wafer demand now eclipses qualified capacity, and inventory drawdown at memory suppliers distorts short-term purchasing behavior . Geopolitical friction inflates fab-construction costs, while water-usage limits restrict greenfield sites in drought-prone zones. Chinese entrants pursue price competition that compresses margins across the chain. Although front-end equipment bookings hint at recovery, end-market weakness in PCs and smartphones tempers volume pick-up, exposing structural rather than cyclical imbalances.

Other drivers and restraints analyzed in the detailed report include:

  1. Renewables-Led Power Conversion Growth
  2. Industrial Automation and Motor-Drive Upgrades
  3. High Cost / Design Complexity of WBG Devices

For complete list of drivers and restraints, kindly check the Table Of Contents.

Segment Analysis

Power integrated circuits contributed significantly to the power semiconductor market size in 2025 and will climb at a 6.02% CAGR through 2031. Automotive battery-management units require multi-rail regulators and functional-safety diagnostics delivered in a compact PMIC footprint. Infineon's ISO 26262-compliant OPTIREG TLF35585 underpins safety-related electronic control units, illustrating the trend toward single-chip power management . Discrete devices remain indispensable for high-current paths, preserving 44.60% revenue share; nevertheless, the discrete share edges lower as designers favor cost-optimized module or IC solutions in space-constrained subsystems.

Supplier roadmaps bundle GaN or SiC dies within intelligent power modules that integrate gate drive, sensing, and protection, shortening time-to-market for inverter and charger assemblies. Module consolidation benefits mid-volume industrial and residential energy customers who lack in-house packaging expertise. Conversely, consumer-electronics ODMs still procure discrete MOSFETs for adapter designs to exploit board-level flexibility and price advantages. The coexistence of discrete, module, and IC formats enriches the power semiconductor market, enabling tailored performance-cost trade-offs.

The Power Semiconductor Market Report is Segmented by Component (Discrete, Modules, Power IC), Material (Silicon, Silicon Carbide, Gallium Nitride, Others), End-User Industry (Automotive, Consumer Electronics and Appliances, ICT, Industrial and Manufacturing, Energy and Power, Aerospace and Defense, Healthcare and Equipment, Others), and Geography. The Market Forecasts are Provided in Terms of Value (USD).

Geography Analysis

Asia Pacific accounted for 51.35% of the power semiconductor market share in 2025 and sustained a 6.74% CAGR through 2031. China spearheads SiC and GaN capacity ramps, aided by state subsidies and vertically integrated supply chains. India fast-tracks an INR 7,600 crore OSAT campus targeting 15 million units per day, signaling intent to onshore assembly. Taiwan and South Korea guard leadership in advanced packaging and memory, respectively, while Japan fortifies upstream materials command.

North America benefits from USD 50 billion in CHIPS Act incentives that unlock brownfield conversions and greenfield fabs by Wolfspeed, Bosch, and overseas entrants. Automotive, defense, and data-center clusters concentrate demand, boosting local content requirements. SEMI projects regional fab-equipment outlays doubling to USD 24.7 billion by 2027, underscoring long-term scale-up .

Europe leverages its automotive and renewable energy policy alignment to catalyze SiC and GaN uptake. Germany's EUR 5 billion Dresden fab approval exemplifies public-private alignment to elevate self-sufficiency. France and Italy offer additional grant packages to preserve leading-edge module and substrate know-how. Emerging markets across the Middle East, Africa, and Latin America stay value-conscious, adopting mature silicon platforms while gradually trialing WBG for utility-scale solar and railway electrification.

  1. Infineon Technologies AG
  2. Texas Instruments Incorporated
  3. Qorvo Inc.
  4. STMicroelectronics N.V.
  5. NXP Semiconductors N.V.
  6. ON Semiconductor Corporation
  7. Renesas Electronics Corporation
  8. Broadcom Inc.
  9. Toshiba Corporation
  10. Mitsubishi Electric Corporation
  11. Fuji Electric Co., Ltd.
  12. Semikron Danfoss GmbH and Co. KG
  13. Wolfspeed Inc.
  14. ROHM Co., Ltd.
  15. Vishay Intertechnology Inc.
  16. Nexperia B.V.
  17. Alpha and Omega Semiconductor Ltd.
  18. Magnachip Semiconductor Corp.
  19. Microchip Technology Inc.
  20. Littelfuse Inc.
  21. Navitas Semiconductor Corp.
  22. Power Integrations Inc.
  23. Monolithic Power Systems Inc.

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Assumptions and Market Definition
  • 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE

  • 4.1 Market Overview
  • 4.2 Market Drivers
    • 4.2.1 Surging demand for EVs and charging infrastructure
    • 4.2.2 Proliferation of 5G base-stations
    • 4.2.3 Renewables-led power conversion growth
    • 4.2.4 Industrial automation and motor-drive upgrades
    • 4.2.5 HAPS and all-electric aircraft powertrains
    • 4.2.6 Fast-charging 2-/3-wheeler EV architectures in Asia
  • 4.3 Market Restraints
    • 4.3.1 Silicon wafer supply tightness cycles
    • 4.3.2 High cost / design complexity of WBG devices
    • 4.3.3 Thermal limits in high-density EV inverters
    • 4.3.4 Export controls on GaN epitaxy tools
  • 4.4 Value / Supply-Chain Analysis
  • 4.5 Regulatory Landscape
  • 4.6 Technological Outlook
  • 4.7 Porters Five Forces Analysis
    • 4.7.1 Bargaining Power of Suppliers
    • 4.7.2 Bargaining Power of Buyers
    • 4.7.3 Threat of New Entrants
    • 4.7.4 Intensity of Competitive Rivalry
    • 4.7.5 Threat of Substitutes
  • 4.8 Investment Analysis

5 MARKET SIZE AND GROWTH FORECASTS (VALUE)

  • 5.1 By Component
    • 5.1.1 Discrete
      • 5.1.1.1 Rectifier
      • 5.1.1.2 Bipolar
      • 5.1.1.3 MOSFET
      • 5.1.1.4 IGBT
      • 5.1.1.5 Other Discrete Components (Thyristor, HEMT, etc.)
    • 5.1.2 Modules
      • 5.1.2.1 Thyristor Module
      • 5.1.2.2 IGBT Module
      • 5.1.2.3 MOSFET Module
      • 5.1.2.4 Intelligent Power Module (IPM)
    • 5.1.3 Power IC
      • 5.1.3.1 PMIC (Multichannel)
      • 5.1.3.2 Switching Regulators (AC/DC, DC/DC, Iso/Non-iso)
      • 5.1.3.3 Linear Regulators
      • 5.1.3.4 Battery Management IC
      • 5.1.3.5 Other Power ICs
  • 5.2 By Material
    • 5.2.1 Silicon
    • 5.2.2 Silicon Carbide (SiC)
    • 5.2.3 Gallium Nitride (GaN)
    • 5.2.4 Others
  • 5.3 By End-user Industry
    • 5.3.1 Automotive
    • 5.3.2 Consumer Electronics and Appliances
    • 5.3.3 ICT (IT and Telecom)
    • 5.3.4 Industrial and Manufacturing
    • 5.3.5 Energy and Power (Renewables, Grid)
    • 5.3.6 Aerospace and Defense
    • 5.3.7 Healthcare Equipment
    • 5.3.8 Others (Rail, Marine)
  • 5.4 By Geography
    • 5.4.1 North America
      • 5.4.1.1 United States
      • 5.4.1.2 Canada
      • 5.4.1.3 Mexico
    • 5.4.2 Europe
      • 5.4.2.1 Germany
      • 5.4.2.2 France
      • 5.4.2.3 United Kingdom
      • 5.4.2.4 Italy
      • 5.4.2.5 Rest of Europe
    • 5.4.3 Asia Pacific
      • 5.4.3.1 China
      • 5.4.3.2 Japan
      • 5.4.3.3 South Korea
      • 5.4.3.4 India
      • 5.4.3.5 Rest of Asia Pacific
    • 5.4.4 South America
      • 5.4.4.1 Brazil
      • 5.4.4.2 Argentina
      • 5.4.4.3 Rest of South America
    • 5.4.5 Middle East
      • 5.4.5.1 Israel
      • 5.4.5.2 Saudi Arabia
      • 5.4.5.3 United Arab Emirates
      • 5.4.5.4 Rest of Middle East
    • 5.4.6 Africa
      • 5.4.6.1 South Africa
      • 5.4.6.2 Egypt
      • 5.4.6.3 Rest of Africa

6 COMPETITIVE LANDSCAPE

  • 6.1 Market Concentration
  • 6.2 Strategic Moves
  • 6.3 Market Share Analysis
  • 6.4 Company Profiles (includes Global level Overview, Market level overview, Core Segments, Financials as available, Strategic Information, Market Rank/Share for key companies, Products and Services, and Recent Developments)
    • 6.4.1 Infineon Technologies AG
    • 6.4.2 Texas Instruments Incorporated
    • 6.4.3 Qorvo Inc.
    • 6.4.4 STMicroelectronics N.V.
    • 6.4.5 NXP Semiconductors N.V.
    • 6.4.6 ON Semiconductor Corporation
    • 6.4.7 Renesas Electronics Corporation
    • 6.4.8 Broadcom Inc.
    • 6.4.9 Toshiba Corporation
    • 6.4.10 Mitsubishi Electric Corporation
    • 6.4.11 Fuji Electric Co., Ltd.
    • 6.4.12 Semikron Danfoss GmbH and Co. KG
    • 6.4.13 Wolfspeed Inc.
    • 6.4.14 ROHM Co., Ltd.
    • 6.4.15 Vishay Intertechnology Inc.
    • 6.4.16 Nexperia B.V.
    • 6.4.17 Alpha and Omega Semiconductor Ltd.
    • 6.4.18 Magnachip Semiconductor Corp.
    • 6.4.19 Microchip Technology Inc.
    • 6.4.20 Littelfuse Inc.
    • 6.4.21 Navitas Semiconductor Corp.
    • 6.4.22 Power Integrations Inc.
    • 6.4.23 Monolithic Power Systems Inc.

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK

  • 7.1 White-space and Unmet-Need Assessment