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1698422

寬能能隙功率半導體市場：2025-2030 年預測

Wide-Bandgap Power Semiconductor Market - Forecasts from 2025 to 2030
出版日期: | 出版商: Knowledge Sourcing Intelligence | 英文 144 Pages | 商品交期: 最快1-2個工作天內

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簡介目錄

寬能能隙(WBG) 功率半導體市場價值在 2025 年達到 5,135,529,000 美元，複合年成長率為 15.91%，到 2030 年市場規模將達到 10,745,033,000 美元。

寬能能隙半導體在以分子物種改質後，表現出獨特的光學和電子特性。這些元件比電力電子領域的矽基元件更小、更快、更可靠、更有效率。 WBG功率半導體獨特的科學技術特性使其在高性能光電和電子應用中越來越受歡迎。隨著對家用電子電器和快速充電等相關技術的需求不斷成長，WBG半導體市場預計將大幅擴張。該設備在高頻下會改變其物理特性，而其化學和機械特性則可用於光電應用。高性能和新穎特性的結合開闢了新的機會並為未來的市場成長鋪平了道路。

市場趨勢：

  • 碳化矽 (SiC) 和氮化鎵 (GaN) 材料的採用日益增多

寬能能隙(WBG) 和超寬能能隙(WBG) 電力電子半導體，例如碳化矽 (SiC) 和氮化鎵 (GaN)，正在徹底改變電力電子產業。這些先進材料比傳統的矽基產品具有更優異的性能和效率。 WBG 半導體的最新進展主要集中在材料品質、裝置設計和製造流程的改進。學術界和工業界的共同努力促進了高品質 SiC 和 GaN基板的開發、結晶生長技術的進步和製造方法的改進。這些創新提高了材料性能、增加了裝置產量比率並降低了製造成本，使得WBG半導體更具商業性可行性。

碳化矽的能隙能量約為 3.3 eV，而矽的能隙能量為 1.1 eV，因此碳化矽是研究最廣泛、應用最廣泛的 WBG 材料之一。基於 SiC 的功率元件具有顯著的優勢，包括更低的傳導和開關損耗、更高的耐高溫性和更高的整體效率。同樣，能隙能量約為3.4 eV的GaN由於其高擊穿電壓、快的開關速度、低導通電阻等優異的性能特點而備受關注。

  • 對高效電力電子產品的需求不斷增加

電動車 (EV)、可再生能源和通訊等領域對高效能電力電子元件的需求日益成長，這是 WBG 半導體市場的主要驅動力。 SiC 特別適用於電動車逆變器和快速充電器等高壓應用，而 GaN 的高頻開關能力使其成為 5G基地台和低壓電源的理想選擇。隨著各行業逐漸轉向更節能的解決方案，向 WBG 半導體的轉變變得至關重要。此外，晶圓品質和基板製造的進步正在推動成本降低和能力增強，從而實現 WBG 半導體的大規模市場應用。這種快速成長凸顯了寬頻隙半導體在全球轉型為低功耗設計過程中核心技術的角色。

  • 預測期內美洲將出現顯著成長

以美國為首的美洲地區，由於各行業對節能電子設備的需求不斷增加，WBG半導體市場正呈指數級成長。人們對電動車的日益關注以及向可再生能源的轉變進一步推動了對 WBG 功率半導體的需求。

例如，家用電子電器、汽車和可再生能源應用對節能設備的需求是一個主要的成長要素。與傳統的矽基元件相比，SiC 和 GaN 等 WBG 半導體元件具有更優異的性能和效率。此外，人們對電動車和可再生能源的日益關注正在加速 WBG 功率半導體的採用，從而擴大美國的市場。

報告中介紹的主要企業包括 ROHM Semiconductor、Wolfspeed、義法半導體、英飛凌科技股份公司、三菱電機、賽米控丹佛斯和德克薩斯。

本報告的主要優點

  • 深刻分析：獲得涵蓋主要地區和新興地區的深入市場洞察，重點關注客戶群、政府政策和社會經濟因素、消費者偏好、垂直行業和其他子區隔。
  • 競爭格局：了解全球主要企業所採用的策略策略，並了解正確策略帶來的潛在市場滲透。
  • 市場趨勢和促進因素：探索動態因素和關鍵市場趨勢以及它們將如何影響市場的未來發展。
  • 可行的建議：利用洞察力進行策略決策，在動態環境中開闢新的業務流和收益。
  • 受眾廣泛：對於新興企業、研究機構、顧問公司、中小企業和大型企業都有益且具有成本效益。

它有什麼用途？

產業和市場考量、商業機會評估、產品需求預測、打入市場策略、地理擴張、資本支出決策、法律規範與影響、新產品開發、競爭影響

研究範圍

  • 2022 年至 2024 年的歷史數據和 2025 年至 2030 年的預測數據
  • 成長機會、挑戰、供應鏈前景、法律規範與趨勢分析
  • 競爭定位、策略和市場佔有率分析
  • 收益成長和預測分析（包括國家在內的細分市場和地區）
  • 公司概況（策略、產品、財務資訊、主要趨勢等）

目錄

第1章 引言

  • 市場概覽
  • 市場定義
  • 研究範圍
  • 市場區隔
  • 貨幣
  • 先決條件
  • 基準年和預測年時間表
  • 相關利益者的主要利益

第2章調查方法

  • 研究設計
  • 研究過程

第3章執行摘要

  • 主要發現

第4章 市場動態

  • 市場促進因素
  • 市場限制
  • 波特五力分析
  • 產業價值鏈分析
  • 分析師觀點

第5章寬能能隙功率半導體市場（依材料）

  • 介紹
  • 碳化矽
  • 氮化鎵
  • 鑽石
  • 氧化鎵
  • 氮化鋁

第6章寬能能隙功率半導體市場（依應用）

  • 介紹
  • 資料中心
  • 可再生能源發電
  • 混合動力汽車和電動車
  • 馬達驅動

第7章寬能能隙功率半導體市場（按區域）

  • 美洲
    • 美國
  • 歐洲、中東和非洲
    • 德國
    • 荷蘭
    • 其他
  • 亞太地區
    • 中國
    • 日本
    • 台灣
    • 韓國
    • 其他

第8章競爭格局及分析

  • 主要企業和策略分析
  • 市場佔有率分析
  • 合併、收購、協議和合作
  • 競爭儀錶板

第9章 公司簡介

  • ROHM Semiconductor
  • Wolfspeed, Inc.
  • STMicroelectronics
  • Infineon Technologies AG
  • Mitsubishi Electric Corporation
  • Semikron Danfoss
  • Texas Instruments
  • Analog Devices, Inc.
  • Navitas Semiconductor
  • Microchip Technology Inc.
簡介目錄
Product Code: KSI061611371

The wide-bandgap power semiconductor market is evaluated at US$5,135.529 million in 2025, growing at a CAGR of 15.91%, reaching the market size of US$10,745.033 million by 2030.

Wide-bandgap (WBG) semiconductors, when modified with molecular species, exhibit distinctive optical and electronic properties. These components are characterized by their smaller size, faster operation, enhanced reliability, and greater efficiency than silicon-based counterparts in power electronics. The unique scientific and technological attributes of WBG power semiconductors have led to their increasing popularity in high-performance optoelectronic and electronic devices. With the rising demand for consumer electronics and related technologies like fast charging, the market for WBG semiconductors is expected to expand significantly. The devices transform their physical characteristics at high frequencies, while their chemical and mechanical features find applications in optoelectronic uses. The combination of high performance and novel properties is opening new opportunities and paving the way for the market's growth in the years ahead.

Market Trends:

  • Increasing Adoption of Silicon Carbide (SiC) and Gallium Nitride (GaN) Materials

Wide and ultrawide bandgap (WBG) power electronic semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are revolutionizing the power electronics industry. These advanced materials outperform traditional silicon-based products, offering superior performance and efficiency. Recent advancements in WBG semiconductors have focused on improving material quality, device design, and manufacturing processes. Collaborative efforts between academia and industry have led to the development of high-quality SiC and GaN substrates, advancements in crystal growth techniques, and refined production methods. These innovations have enhanced material performance, increased device yields, and reduced manufacturing costs, making WBG semiconductors more commercially viable.

SiC, with a bandgap energy of approximately 3.3 electron volts (eV) compared to silicon's 1.1 eV, is one of the most extensively researched and widely available WBG materials. SiC-based power devices offer significant advantages, including lower conduction and switching losses, higher temperature tolerance, and improved overall efficiency. Similarly, GaN, with a bandgap energy of around 3.4 eV, has gained considerable attention for its exceptional performance characteristics, such as high breakdown voltages, fast switching speeds, and low on-resistance.

  • Rising Demand for High-Efficiency Power Electronics

The growing need for high-efficiency power electronics in sectors like electric vehicles (EVs), renewable energy, and telecommunications is a key driver of the WBG semiconductors market. SiC is particularly favored for high-voltage applications, such as EV inverters and fast chargers, while GaN's high-frequency switching capabilities are making it ideal for 5G base stations and low-voltage power supplies. The shift toward WBG semiconductors is becoming essential as industries converge toward energy-efficient solutions. Additionally, advancements in wafer quality and substrate production are reducing costs and enhancing functionality, enabling mass-market adoption of WBG semiconductors. This rapid growth underscores their role as a central technology in the global transition to low-power electronics.

  • Americas Experiencing Significant Growth in the Forecast Period

The Americas, particularly the United States, are witnessing exponential growth in the WBG semiconductors market, driven by the increasing demand for energy-efficient electronic devices across various industries. The growing focus on electric vehicles and the transition to renewable energy sources are further boosting the demand for WBG power semiconductors.

For example, the need for energy-efficient devices in consumer electronics, automotive, and renewable energy applications is a major growth factor. WBG semiconductors, such as SiC and GaN components, offer superior performance and efficiency compared to traditional silicon-based devices. Additionally, the rising emphasis on EVs and renewable energy is accelerating the adoption of WBG power semiconductors, expanding the market in the United States and beyond.

Some of the major players covered in this report include ROHM Semiconductor, Wolfspeed, Inc., STMicroelectronics, Infineon Technologies AG, Mitsubishi Electric Corporation, Semikron Danfoss, Texas Instruments, among others.

Key Benefits of this Report:

  • Insightful Analysis: Gain detailed market insights covering major as well as emerging geographical regions, focusing on customer segments, government policies and socio-economic factors, consumer preferences, industry verticals, and other sub-segments.
  • Competitive Landscape: Understand the strategic maneuvers employed by key players globally to understand possible market penetration with the correct strategy.
  • Market Drivers & Future Trends: Explore the dynamic factors and pivotal market trends and how they will shape future market developments.
  • Actionable Recommendations: Utilize the insights to exercise strategic decisions to uncover new business streams and revenues in a dynamic environment.
  • Caters to a Wide Audience: Beneficial and cost-effective for startups, research institutions, consultants, SMEs, and large enterprises.

What do businesses use our reports for?

Industry and Market Insights, Opportunity Assessment, Product Demand Forecasting, Market Entry Strategy, Geographical Expansion, Capital Investment Decisions, Regulatory Framework & Implications, New Product Development, Competitive Intelligence

Report Coverage:

  • Historical data from 2022 to 2024 & forecast data from 2025 to 2030
  • Growth Opportunities, Challenges, Supply Chain Outlook, Regulatory Framework, and Trend Analysis
  • Competitive Positioning, Strategies, and Market Share Analysis
  • Revenue Growth and Forecast Assessment of segments and regions including countries
  • Company Profiling (Strategies, Products, Financial Information, and Key Developments among others)

Wide-Bandgap Power Semiconductor Market is analyzed into the following segments:

By Material

  • Silicon Carbide
  • Gallium Nitride
  • Diamond
  • Gallium Oxide
  • Aluminium Nitride
  • By Application
  • Data Centers
  • Renewable Energy Generation
  • Hybrid and Electric Vehicles
  • Motor Drives

By Geography

  • Americas
  • US
  • Europe, the Middle East, and Africa
  • Germany
  • Netherlands
  • Others
  • Asia Pacific
  • China
  • Japan
  • Taiwan
  • South Korea
  • Others

TABLE OF CONTENTS

1. INTRODUCTION

  • 1.1. Market Overview
  • 1.2. Market Definition
  • 1.3. Scope of the Study
  • 1.4. Market Segmentation
  • 1.5. Currency
  • 1.6. Assumptions
  • 1.7. Base and Forecast Years Timeline
  • 1.8. Key Benefits to the Stakeholder

2. RESEARCH METHODOLOGY

  • 2.1. Research Design
  • 2.2. Research Processes

3. EXECUTIVE SUMMARY

  • 3.1. Key Findings

4. MARKET DYNAMICS

  • 4.1. Market Drivers
  • 4.2. Market Restraints
  • 4.3. Porter's Five Forces Analysis
    • 4.3.1. Bargaining Power of Suppliers
    • 4.3.2. Bargaining Power of Buyers
    • 4.3.3. Threat of New Entrants
    • 4.3.4. Threat of Substitutes
    • 4.3.5. Competitive Rivalry in the Industry
  • 4.4. Industry Value Chain Analysis
  • 4.5. Analyst View

5. WIDE-BANDGAP POWER SEMICONDUCTOR MARKET BY MATERIAL

  • 5.1. Introduction
  • 5.2. Silicon Carbide
  • 5.3. Gallium Nitride
  • 5.4. Diamond
  • 5.5. Gallium Oxide
  • 5.6. Aluminium Nitride

6. WIDE-BANDGAP POWER SEMICONDUCTOR MARKET BY APPLICATION

  • 6.1. Introduction
  • 6.2. Data Centers
  • 6.3. Renewable Energy Generation
  • 6.4. Hybrid and Electric Vehicles
  • 6.5. Motor Drives

7. WIDE-BANDGAP POWER SEMICONDUCTOR MARKET BY GEOGRAPHY

  • 7.1. Americas
    • 7.1.1. US
  • 7.2. Europe, Middle East, and Africa
    • 7.2.1. Germany
    • 7.2.2. Netherland
    • 7.2.3. Others
  • 7.3. Asia Pacific
    • 7.3.1. China
    • 7.3.2. Japan
    • 7.3.3. Taiwan
    • 7.3.4. South Korea
    • 7.3.5. Others

8. COMPETITIVE ENVIRONMENT AND ANALYSIS

  • 8.1. Major Players and Strategy Analysis
  • 8.2. Market Share Analysis
  • 8.3. Mergers, Acquisitions, Agreements, and Collaborations
  • 8.4. Competitive Dashboard

9. COMPANY PROFILES

  • 9.1. ROHM Semiconductor
  • 9.2. Wolfspeed, Inc.
  • 9.3. STMicroelectronics
  • 9.4. Infineon Technologies AG
  • 9.5. Mitsubishi Electric Corporation
  • 9.6. Semikron Danfoss
  • 9.7. Texas Instruments
  • 9.8. Analog Devices, Inc.
  • 9.9. Navitas Semiconductor
  • 9.10. Microchip Technology Inc.