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1457132

寬能能隙功率半導體市場 - 2024 年至 2029 年預測

Wide-Bandgap Power Semiconductor Market - Forecasts from 2024 to 2029

出版日期: 2024年02月29日 | 出版商:

Knowledge Sourcing Intelligence | 英文 124 Pages | 商品交期: 最快1-2個工作天內

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簡介目錄

預計寬能能隙功率半導體市場的複合年成長率將在預測期內達到27.37%，市場規模將從2022年的1,769,826,000美元增至2029年的9,623,132,000美元。

當以分子種類修飾時，寬能能隙(WBG) 半導體表現出獨特的光學和電子特性。與電力電子領域的矽基組件相比，這些組件的特點是尺寸更小、運行速度更快、可靠性更高、效率更高。 WBG功率半導體獨特的科技特性使其在高性能光電和電子設備中越來越受歡迎。目前，家用電子電器及快速充電等相關技術的需求不斷增加，WBG半導體市場預計將大幅擴大。該設備利用射頻來改變其物理特性，而其化學和機械特性則應用於光電應用。高性能和新穎特性的結合開闢了新的機遇，並為未來的市場成長鋪平了道路。

市場促進因素：

擴大轉向碳化矽 (SiC) 和氮化鎵 (GaN) 材料：

在電力電子領域，寬能能隙和超寬能能隙電力電子半導體代表了革命性的創新。這些先進材料，包括碳化矽 (SiC)、氮化鎵 (GaN) 和鑽石，性能優於傳統的矽基產品。近年來，寬能能隙電力電子半導體取得了顯著進展。這包括材料品質、設備設計和製造技術的改進。優質 SiC 和 GaN基板的開發、結晶生長方法的進步基板裝置製造流程的改進是學術界和工業界相關人員之間合作的結果。這些進步使得寬能能隙裝置在商業性越來越可行。這是由改進的材料性能、提高的裝置產量比率和降低的製造成本所推動的。

碳化矽 (SiC) 是一種被廣泛研究且容易取得的寬能能隙材料。 SiC 的能隙能量約為 3.3 電子伏特 (eV)，與矽的 1.1 eV 相比顯著增加。基於 SiC 的功率元件具有多種優勢，包括降低傳導和開關損耗、提高耐高溫能力以及提高整體效率。另一種值得注意的寬能能隙材料是氮化鎵（GaN），它最近受到了廣泛關注。 GaN 的能隙能量約為 3.4 eV，與 SiC 類似。使用GaN的功率元件表現出出色的性能特徵，例如高擊穿電壓、高速開關和低導通電阻。

市場開拓增加寬能能隙功率半導體材料的市場優勢。

PowerAmerica 和 X-Fab 聯合將德克薩斯) 一家生產傳統矽晶圓的工廠改造成世界上第一家開放式碳化矽鑄造廠。為了提高電力電子技術的能源效率和可靠性，Power America 旨在降低進入門檻並支援寬能能隙(WBG) 電力電子技術的商業化。這有望擴大美國寬能能隙功率半導體的市場佔有率。

2021 年 11 月，領先的基礎半導體供應商 Nexperia 宣布進軍高功率碳化矽 (SiC) 二極體市場，推出 650V、10A SiC 肖特基二極體。 Nexperia 以其可靠的高效能功率氮化鎵 (GaN) FET 供應而聞名，這項策略舉措旨在擴大其高電壓寬能能隙半導體裝置產品組合。 Nexperia 發布的 SiC 肖特基二極體是一款工業級裝置。它具有 650V 的重複峰值反向電壓 (VRRM) 和 10A 的連續正向電流 (IF)，專為在電源轉換應用中提供超高性能、高效率和低能量損耗的組合而設計。

2022年2月17日，英飛凌科技股份公司透過擴大其在寬能能隙（SiC和GaN）半導體領域的製造能力，鞏固了其在功率半導體市場的領導地位。該公司已投資超過 20 億歐元在馬來西亞居林工廠建造第三個模組。一旦全面運作，新模組預計將為基於碳化矽和氮化鎵的產品帶來 20 億歐元的額外年銷售額。

2023 年 6 月 19 日，Vitesco Technologies 是一家專注於最新驅動技術和電氣化解決方案的全球知名製造商，已在節能碳化矽功率半導體領域獲得了具有重要戰略意義的能力。這項成就是與 ROHM 長期供應合作關係的結果，該合作關係延續至 2030 年，價值超過 10 億美元。碳化矽 (SiC) 裝置在高效能電力電子設備的設計中發揮重要作用，尤其是在電動車逆變器等應用中。 SiC 晶片是一項關鍵技術，特別是對於具有高電壓、遠大的續航里程目標和最佳整體效率的車輛而言。透過與 ROHM 的持續開發合作，相關 SiC 晶片將進一步增強，可用於汽車逆變器，並於 2024 年開始實施。

美洲寬能能隙功率半導體市場將顯著成長：

各行業對節能電子設備的需求不斷成長是推動美國市場的因素之一。

此外，對電動車的日益重視以及向可再生能源的轉變正在推動美國對WBG功率半導體的需求並擴大市場。例如，各行業對節能電子設備的需求不斷成長是關鍵的成長要素。 WBG 功率半導體對於家用電子電器、汽車和可再生能源等應用至關重要。因為 WBG 功率半導體比傳統矽基元件具有更好的性能和效率。此類裝置的範例包括碳化矽 (SiC) 和氮化鎵 (GaN) 組件。此外，向電動車和再生能源來源的轉變正在推動對 WBG 功率半導體的需求並擴大美國市場。

此外，國際能源總署宣布，2022 年美國電動車銷量將比 2021 年成長 55%，其中純電動車將推動這一成長。經過2019-2020年的強勁成長後，純電動車銷量成長了70%，達到約80萬輛，標誌著第二年的強勁成長。

Wide-bandgap (WBG) semiconductors, when modified with molecular species, exhibit distinctive optical and electronic properties. These components are characterized by their smaller size, faster operation, enhanced reliability, and greater efficiency compared to silicon-based counterparts in power electronics. The unique scientific and technological attributes of WBG power semiconductors have led to their increasing popularity in high-performance optoelectronic and electronic devices. With a rising demand for consumer electronics and related technologies like fast charging in the current period, the market for WBG semiconductors is expected to expand significantly. The devices transform their physical characteristics at high frequencies, while their chemical and mechanical features find applications in optoelectronic uses. The combination of high performance and novel properties is opening new opportunities and paving the way for the market's growth in the years ahead.

MARKET DRIVERS:

Rising shift towards silicon carbide (SiC) and gallium nitride (GaN) materials:

In the realm of power electronics, wide and ultrawide bandgap power electronic semiconductors represent a transformative innovation. These state-of-the-art materials, including silicon carbide (SiC), gallium nitride (GaN), and diamond, outperform traditional Si-based products. Recent years have witnessed substantial improvements in wide bandgap power electronic semiconductors. It encompasses improvements in material quality, device design, and manufacturing techniques. The development of superior SiC and GaN substrates, progress in crystal growth methods, and refinement in device production processes have resulted from collaborative efforts between academic and industry stakeholders. These advancements have made wide bandgap devices increasingly viable commercially. This is driven by heightened material performance, improved device yields, and reduced production costs.

Silicon carbide (SiC) stands out as one of the extensively researched and readily available wide bandgap materials. It possesses a bandgap energy of approximately 3.3 electron volts (eV), a notable increase compared to silicon's 1.1 eV. Power devices based on SiC offer multiple advantages, including reduced conduction and switching losses, heightened tolerance to higher temperatures, and enhanced overall efficiency. Another noteworthy wide bandgap material is gallium nitride (GaN), which has garnered significant attention in recent times. GaN exhibits a bandgap energy of approximately 3.4 eV, similar to SiC. Power devices based on GaN demonstrate exceptional performance characteristics, including high breakdown voltages, swift switching speeds, and low on-resistance.

Market developments to increase the market lucrativeness for wide bandgap power semiconductor materials.

PowerAmerica and X-Fab partnered together to convert a former Texas Instruments facility that produced conventional silicon wafers into the world's first open silicon carbide foundry. To improve power electronics' energy efficiency and dependability, PowerAmerica aimed to lower entry barriers and assist in the commercialization of wide bandgap (WBG) power electronics technologies. This is expected to increase the market share of wide-bandgap power semiconductors in the United States.

In November 2021, Nexperia, a leading provider of essential semiconductors, announced its entry into the high-power Silicon Carbide (SiC) diodes market by introducing 650 V, 10 A SiC Schottky diodes. This strategic move by Nexperia, known for its reliable supply of efficient power Gallium Nitride (GaN) FETs, aims to broaden its portfolio of high-voltage wide bandgap semiconductor devices. The inaugural SiC Schottky diode from Nexperia is an industrial-grade device. It features a repetitive peak reverse voltage (VRRM) of 650 V and a continuous forward current (IF) of 10 A. It is specifically designed to offer a combination of ultra-high performance, high efficiency, and low energy loss in power conversion applications.

On February 17, 2022, Infineon Technologies AG bolstered its market leadership in power semiconductors by expanding manufacturing capacities in the wide bandgap (SiC and GaN) semiconductor sector. The company invested over €2 billion to construct a third module at its Kulim, Malaysia site. When fully operational, the new module was projected to generate an additional €2 billion in annual revenue with products based on silicon carbide and gallium nitride.

On June 19, 2023, Vitesco Technologies, a prominent global manufacturer specializing in modern drive technologies and electrification solutions, secured strategically significant capacities in energy-efficient silicon carbide power semiconductors. This achievement is the result of a long-term supply partnership valued at over one billion US dollars with ROHM, extending until 2030. Silicon carbide (SiC) devices play a crucial role in the design of highly efficient power electronics, especially in applications such as electric car inverters. SiC chips represent a key technology, particularly for high voltages and for vehicles with ambitious range goals and optimal overall efficiency. Through the ongoing development partnership with ROHM, the relevant SiC chips have been further enhanced for use in automotive inverters, with implementation starting in 2024.

Americas to witness significant market growth for the wide-bandgap power semiconductors market:

The growing need for energy-efficient electronic devices across a range of industries is one of the factors driving the market in the United States.

Further, the growing emphasis on electric vehicles and the shift to renewable energy sources are driving up demand for WBG power semiconductors in the United States and expanding the market. For instance, the growing need for energy-efficient electronic devices across a range of industries is an important growth drive. WBG power semiconductors are crucial for applications in consumer electronics, automotive, and renewable energy. This is because they provide better performance and efficiency than conventional silicon-based devices. Examples of these devices are silicon carbide (SiC) and gallium nitride (GaN) components. Furthermore, the growing emphasis on electric vehicles and the shift to renewable energy sources are driving up demand for WBG power semiconductors and expanding the market in the United States.

Moreover, as per the International Energy Agency, the sales of electric vehicles rose by 55% in the US in 2022 compared to 2021, with BEVs driving this growth. After a strong growth in 2019-2020, sales of BEVs increased by 70% to nearly 800,000, indicating a second year of strong growth.

Market Segmentation:

By Material

Silicon Carbide
Gallium Nitride
Diamond
Gallium Oxide
Aluminium Nitride

By Application

Data Centers
Renewable Energy Generation
Hybrid and Electric Vehicles
Motor Drives

By Geography

Americas
USA
Others
Europe Middle East and Africa
UK
Germany
France
Others
Asia Pacific
China
Japan
Taiwan
South Korea
Others

1. INTRODUCTION

1.1. Market Overview
1.2. Market Definition
1.3. Scope of the Study
1.4. Market Segmentation
1.5. Currency
1.6. Assumptions
1.7. Base, and Forecast Years Timeline

2. RESEARCH METHODOLOGY

2.1. Research Data
2.2. Research Process

3. EXECUTIVE SUMMARY

3.1. Research Highlights

4. MARKET DYNAMICS

4.1. Market Drivers
4.2. Market Restraints
4.3. Porter's Five Forces Analysis
4.4. Industry Value Chain Analysis

5. WIDE-BANDGAP POWER SEMICONDUCTOR MARKET, BY MATERIAL

5.1. Introduction
5.2. Silicon Carbide
5.3. Gallium Nitride
5.4. Diamond
5.5. Gallium Oxide
5.6. Aluminium Nitride

6. WIDE-BANDGAP POWER SEMICONDUCTOR MARKET, BY APPLICATION

6.1. Introduction
6.2. Data Centers
6.3. Renewable Energy Generation
6.4. Hybrid and Electric Vehicles
6.5. Motor Drives

7. WIDE-BANDGAP POWER SEMICONDUCTOR MARKET, BY GEOGRAPHY

7.1. Introduction
7.2. Americas
- 7.2.1. By Material
- 7.2.2. By Application
- 7.2.3. By Country
  - 7.2.3.1. USA
  - 7.2.3.2. Others
7.3. Europe Middle East and Africa
- 7.3.1. By Material
- 7.3.2. By Application
- 7.3.3. By Country
  - 7.3.3.1. Germany
  - 7.3.3.2. France
  - 7.3.3.3. UK
  - 7.3.3.4. Others
7.4. Asia Pacific
- 7.4.1. By Material
- 7.4.2. By Application
- 7.4.3. By Country
  - 7.4.3.1. China
  - 7.4.3.2. Japan
  - 7.4.3.3. Taiwan
  - 7.4.3.4. South Korea
  - 7.4.3.5. Others