全球砷化鎵（GaAs）射頻元件市場

預計到 2030 年，全球砷化鎵 (GaAs) 射頻元件市場規模將達到 9.094 億美元

全球砷化鎵 (GaAs) 射頻元件市場規模預計在 2024 年達到 5.956 億美元，預計到 2030 年將達到 9.094 億美元，2024 年至 2030 年的複合年成長率為 7.3%。濾波器是本報告分析的細分市場之一，預計其複合年成長率為 7.7%，到分析期結束時將達到 3.773 億美元。功率放大器細分市場在分析期間的複合年成長率預計為 5.3%。

美國市場規模將達 1.566 億美元；中國市場預期複合年成長率為 7.1%

2024年，美國砷化鎵 (GaAs) 射頻元件市場規模估計為1.566億美元。預計到2030年，作為世界第二大經濟體的中國市場規模將達到1.456億美元，在2024-2030年的分析期內，複合年成長率為7.1%。其他值得關注的區域市場包括日本和加拿大，預計在分析期間內，這兩個市場的複合年成長率分別為6.8%和6.1%。在歐洲，預計德國市場的複合年成長率為5.8%。

全球砷化鎵（GaAs）射頻元件市場－主要趨勢與促進因素摘要

為什麼 GaAs RF 裝置對於現代高頻通訊至關重要？

砷化鎵 (GaAs) 射頻元件正逐漸成為全球通訊基礎設施中的基本組件，可實現現代無線系統所需的高頻、低雜訊和高效性能。 GaAs 具有出色的電子遷移率和直接能隙，使其性能優於矽，尤其是在功率效率和訊號保真度至關重要的射頻 (RF) 和微波應用中。這些特性使功率放大器、低雜訊放大器、開關和攪拌機等 GaAs 射頻元件特別適用於行動通訊、航太和國防、衛星通訊、雷達系統和無線寬頻等關鍵領域。在家用電子電器中，智慧型手機嚴重依賴 GaAs 射頻前端模組來支援多頻段 4G 和 5G 連接，同時延長電池壽命並保持緊湊的外形。 GaAs 元件還提供出色的線性度和增益，使其能夠支援高資料速率應用所需的進階調變方案。隨著世界轉向使用越來越高的頻段，例如用於5G及更高頻段的毫米波頻率，矽的限制日益凸顯，進一步鞏固了GaAs在先進射頻電路設計中的重要性。隨著人們越來越重視跨裝置和網路的可靠、高吞吐量無線通訊，GaAs射頻元件已成為高效能連接的重要推動因素。

工業應用如何推動GaAs RF元件的成長與多樣化？

無線支援應用領域不斷擴大，推動各行各業採用 GaAs RF 裝置。在行動通訊，GaAs 功率放大器和開關廣泛用於用戶設備和基地台，以在多個頻段（包括 sub-6 GHz 和毫米波）提供強大的訊號發送和接收。國防和航太長期以來一直依賴 GaAs RF 技術用於雷達、電子戰和安全通訊系統，這些系統要求高功率、堅固耐用和耐輻射。在衛星通訊，GaAs RF 組件用於中繼器和終端，為廣播、導航和全球網際網路服務提供高頻鏈路。此外，汽車行業正在將 GaAs RF 裝置應用於車對一切 (V2X)通訊和高級駕駛輔助系統 (ADAS) 等新應用，可靠的高頻性能對於安全和自主功能至關重要。工業物聯網 (IIoT) 和智慧基礎設施也受益於 GaAs RF 裝置在智慧計量、遙感探測和機器對機器 (M2M)通訊等應用中的應用。這些多樣化的使用案例不僅推動了市場需求，而且還鼓勵製造商開發客製化的、特定應用的 GaAs RF 解決方案，以滿足獨特的環境和技術規格。

哪些技術創新正在提高GaAs RF元件的性能和整合度？

材料工程、電路設計和半導體製程的突破顯著提高了 GaAs RF 設備的性能、整合度和可製造性，使它們能夠滿足下一代通訊系統日益嚴格的要求。金屬有機化學氣相沉積 (MOCVD) 和分子束外延 (MBE) 等外延生長技術的改進，正在生產出更高純度的 GaAs 晶圓，並能精確控制摻雜分佈和異質結形成，這對於製造高效電晶體（如 HBT（異質結雙極電晶體）和 pHEMT（偽高電子移動性電晶體）至關重要。先進的微影術和蝕刻製程可實現更小的幾何尺寸和更高的整合密度，從而產生緊湊、高性能的單片微波積體電路 (MMIC)。這些 MMIC 採用 GaAs基板製造，將放大、濾波和開關等多種 RF 功能整合到單一晶片上，從而降低了功耗和物理佔用空間。溫度控管領域的創新，例如先進的封裝和散熱技術，正在提高GaAs射頻元件在高功率、高溫環境下的可靠性。此外，與GaN和SiGe等互補技術的混合整合，可以實現多功能模組，結合不同材料的優勢，從而最佳化更寬頻寬的性能。借助針對射頻模擬和佈局進行最佳化的電子設計自動化(EDA)工具的支持，工程師現在可以更有效率地設計、測試和迭代GaAs射頻電路，從而加速尖端無線系統的開發。

哪些市場力量推動GaAs射頻元件產業的擴張？

在宏觀經濟趨勢、技術要求和不斷變化的消費者期望等因素的共同推動下，全球 GaAs 射頻元件市場正經歷強勁成長。其中最突出的促進因素之一是 5G 網路的快速部署和密集化，這需要更高頻率和更有效率的射頻元件，以支援更高的頻寬、更低的延遲和增強的設備間通訊。串流媒體、遊戲和即時通訊推動的行動數據消費激增，給通訊業者帶來了投資高效能射頻硬體的額外壓力。同時，從智慧家庭到工業自動化的物聯網生態系統的擴展，正在推動對小型、低功耗射頻模組的需求，而這正是 GaAs 元件的優勢領域。領先晶片製造商的戰略投資以及政府支持的旨在加強國內半導體能力的舉措，尤其是在美國、中國、韓國和歐盟，正在進一步刺激 GaAs 射頻供應鏈。電子設備向更小、功能更多的方向發展也推動了對整合式射頻解決方案的需求，這些解決方案能夠在性能、空間和功率效率之間取得平衡。同時，持續的地緣政治擔憂正促使各國和各企業尋求多元化採購，並投資於垂直整合的砷化鎵 (GaAs) 製造。隨著 6G、衛星網際網路、無人系統和國防電子等領域新應用的湧現，對高效能射頻解決方案的需求將持續成長。砷化鎵射頻裝置憑藉其獨特的優勢，能夠應對高頻工作的技術挑戰，使其在下一個全球互聯時代仍將保持關鍵技術支柱的地位。

部分

設備（濾波器、功率放大器、低雜訊放大器、開關、其他設備）、應用（消費性設備、汽車、通訊、航太和國防、其他應用）

受訪公司範例（47家值得關注的公司）

• Analog Devices, Inc.
• AXT Inc.
• CEL（California Eastern Laboratories）
• China Crystal Technologies
• Coherent Corp.
• Freiberger Compound Materials GmbH
• Guerrilla RF
• IQE PLC
• MACOM Technology Solutions
• Microchip Technology Inc.
• Murata Manufacturing Co., Ltd.
• NXP Semiconductors NV
• ON Semiconductor Corporation
• Qorvo, Inc.
• RFHIC Corporation
• Shenzhou Crystal Technology Co., Ltd.
• Skyworks Solutions, Inc.
• Sumitomo Electric Industries, Ltd.
• United Monolithic Semiconductors SAS
• Xiamen Powerway Advanced Material Co., Ltd.

人工智慧整合

我們正在利用可操作的專家內容和人工智慧工具來改變市場和競爭情報。

Global 特定產業SLM 的典型規範，而是建立了一個從全球專家收集的內容庫，其中包括視訊錄影、部落格、搜尋引擎研究以及大量的公司、產品/服務和市場數據。

關稅影響係數

全球產業分析師根據公司總部所在國家、製造地、進出口狀況（成品和原始OEM）預測其競爭態勢的變化。這種複雜且多面向的市場動態預計將以多種方式影響競爭對手，包括銷貨成本成本 (COGS) 上升、盈利下降、供應鏈重組以及其他微觀和宏觀市場動態。

目錄

第1章調查方法

第2章執行摘要

• 市場概覽
• 主要企業
• 市場趨勢和促進因素
• 全球市場展望

第3章市場分析

• 美國
• 加拿大
• 日本
• 中國
• 歐洲
• 法國
• 德國
• 義大利
• 英國
• 其他歐洲國家
• 亞太地區
• 其他地區

第4章 競賽

Global Gallium Arsenide (GaAs) RF Devices Market to Reach US$909.4 Million by 2030

The global market for Gallium Arsenide (GaAs) RF Devices estimated at US$595.6 Million in the year 2024, is expected to reach US$909.4 Million by 2030, growing at a CAGR of 7.3% over the analysis period 2024-2030. Filters, one of the segments analyzed in the report, is expected to record a 7.7% CAGR and reach US$377.3 Million by the end of the analysis period. Growth in the Power Amplifiers segment is estimated at 5.3% CAGR over the analysis period.

The U.S. Market is Estimated at US$156.6 Million While China is Forecast to Grow at 7.1% CAGR

The Gallium Arsenide (GaAs) RF Devices market in the U.S. is estimated at US$156.6 Million in the year 2024. China, the world's second largest economy, is forecast to reach a projected market size of US$145.6 Million by the year 2030 trailing a CAGR of 7.1% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 6.8% and 6.1% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 5.8% CAGR.

Global Gallium Arsenide (GaAs) RF Devices Market - Key Trends & Drivers Summarized

Why Are GaAs RF Devices Essential to Modern High-Frequency Communications?

Gallium Arsenide (GaAs) RF devices are increasingly recognized as foundational components in the global communication infrastructure, enabling the high-frequency, low-noise, and high-efficiency performance required by modern wireless systems. GaAs possesses superior electron mobility and a direct bandgap, which allow it to outperform silicon in radio frequency (RF) and microwave applications, particularly in devices where power efficiency and signal fidelity are crucial. These characteristics make GaAs RF devices-such as power amplifiers, low-noise amplifiers, switches, and mixers-especially suitable for critical sectors including mobile telecommunications, aerospace and defense, satellite communication, radar systems, and wireless broadband. In consumer electronics, smartphones heavily rely on GaAs RF front-end modules to support multiband 4G and 5G connectivity while preserving battery life and maintaining compact form factors. GaAs devices also excel in linearity and gain, enabling them to support sophisticated modulation schemes required for high-data-rate applications. As the world shifts toward increasingly high-frequency spectrum usage, such as millimeter-wave frequencies in 5G and beyond, the limitations of silicon become more apparent-further solidifying GaAs’s relevance in advanced RF circuit design. With a growing emphasis on reliable, high-throughput wireless communication across devices and networks, GaAs RF devices are positioned as indispensable enablers of high-performance connectivity.

How Are Industry Applications Driving Growth and Diversification of GaAs RF Devices?

The expanding landscape of wireless-enabled applications is propelling the adoption of GaAs RF devices across a wide range of industries, each leveraging the technology’s unique strengths for specific operational demands. In mobile communications, GaAs power amplifiers and switches are widely used in both user devices and base stations to ensure strong signal transmission and reception across multiple frequency bands, including sub-6 GHz and mmWave. The defense and aerospace sectors have long depended on GaAs RF technology for radar, electronic warfare, and secure communication systems, where high power output, ruggedness, and resistance to radiation are vital. In satellite communications, GaAs RF components are used in transponders and terminals to provide high-frequency links for broadcasting, navigation, and global internet services. Additionally, the automotive industry is adopting GaAs RF devices in emerging applications such as vehicle-to-everything (V2X) communication and advanced driver-assistance systems (ADAS), where reliable high-frequency performance is critical to safety and autonomous functionality. Industrial IoT (IIoT) and smart infrastructure are also benefiting from GaAs RF devices in applications like smart meters, remote sensing, and machine-to-machine (M2M) communication. These diverse use cases are not only expanding market demand but are also encouraging manufacturers to develop custom, application-specific GaAs RF solutions that meet unique environmental and technical specifications.

What Technological Innovations Are Enhancing the Performance and Integration of GaAs RF Devices?

Breakthroughs in materials engineering, circuit design, and semiconductor processing are significantly enhancing the performance, integration, and manufacturability of GaAs RF devices, enabling them to meet the increasingly stringent demands of next-generation communication systems. Improvements in epitaxial growth techniques-such as metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE)-are producing higher-purity GaAs wafers with precise control over doping profiles and heterojunction formation, which are essential for fabricating high-efficiency transistors like HBTs (heterojunction bipolar transistors) and pHEMTs (pseudomorphic high electron mobility transistors). Advanced lithography and etching processes are enabling finer geometries and greater integration density, allowing for compact and high-performance monolithic microwave integrated circuits (MMICs). These MMICs, fabricated using GaAs substrates, combine multiple RF functions-such as amplification, filtering, and switching-into a single chip, reducing power consumption and physical footprint. Innovations in thermal management, including the use of advanced packaging and heat-spreading techniques, are improving the reliability of GaAs RF devices in high-power and high-temperature environments. Additionally, hybrid integration with complementary technologies such as GaN and SiGe is enabling multifunctional modules that combine the advantages of different materials to optimize performance across a wider frequency spectrum. With the support of electronic design automation (EDA) tools tailored for RF simulation and layout, engineers can now design, test, and iterate GaAs RF circuits more efficiently, accelerating the development of cutting-edge wireless systems.

What Market Forces Are Driving the Expansion of the GaAs RF Devices Industry?

The global GaAs RF devices market is experiencing robust growth fueled by the convergence of macroeconomic trends, technological imperatives, and evolving consumer expectations. One of the most prominent drivers is the rapid rollout and densification of 5G networks, which demand high-frequency and high-efficiency RF components capable of supporting greater bandwidth, low latency, and enhanced device-to-device communication. The surge in mobile data consumption, fueled by streaming, gaming, and real-time communication, is putting additional pressure on telecom providers to invest in high-performance RF hardware. Concurrently, the expansion of IoT ecosystems, from smart homes to industrial automation, is increasing the demand for compact, low-power RF modules, an area where GaAs components excel. Strategic investments by major chipmakers and government-backed initiatives to strengthen domestic semiconductor capabilities-especially in the U.S., China, South Korea, and the EU-are further energizing the GaAs RF supply chain. The trend toward miniaturization and multifunctionality in electronic devices is also driving the need for integrated RF solutions that combine performance with space and power efficiency. Meanwhile, ongoing geopolitical concerns around semiconductor supply chains are prompting nations and companies to diversify sourcing and invest in vertically integrated GaAs manufacturing. As new applications emerge in 6G, satellite internet, unmanned systems, and defense electronics, the demand for high-performance RF solutions will only grow stronger. GaAs RF devices, with their unique ability to meet the technical challenges of high-frequency operation, are well-positioned to remain a critical technology pillar in the next era of global connectivity.

SCOPE OF STUDY:

The report analyzes the Gallium Arsenide (GaAs) RF Devices market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:

Device (Filters, Power Amplifiers, Low Noise Amplifiers, Switch, Other Devices); Application (Consumer Devices, Automotive, Telecommunications, Aerospace & Defense, Other Applications)

Geographic Regions/Countries:

World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; and Rest of Europe); Asia-Pacific; Rest of World.

Select Competitors (Total 47 Featured) -

• Analog Devices, Inc.
• AXT Inc.
• CEL (California Eastern Laboratories)
• China Crystal Technologies
• Coherent Corp.
• Freiberger Compound Materials GmbH
• Guerrilla RF
• IQE PLC
• MACOM Technology Solutions
• Microchip Technology Inc.
• Murata Manufacturing Co., Ltd.
• NXP Semiconductors N.V.
• ON Semiconductor Corporation
• Qorvo, Inc.
• RFHIC Corporation
• Shenzhou Crystal Technology Co., Ltd.
• Skyworks Solutions, Inc.
• Sumitomo Electric Industries, Ltd.
• United Monolithic Semiconductors S.A.S.
• Xiamen Powerway Advanced Material Co., Ltd.

AI INTEGRATIONS

We're transforming market and competitive intelligence with validated expert content and AI tools.

Instead of following the general norm of querying LLMs and Industry-specific SLMs, we built repositories of content curated from domain experts worldwide including video transcripts, blogs, search engines research, and massive amounts of enterprise, product/service, and market data.

TARIFF IMPACT FACTOR

Our new release incorporates impact of tariffs on geographical markets as we predict a shift in competitiveness of companies based on HQ country, manufacturing base, exports and imports (finished goods and OEM). This intricate and multifaceted market reality will impact competitors by increasing the Cost of Goods Sold (COGS), reducing profitability, reconfiguring supply chains, amongst other micro and macro market dynamics.

TABLE OF CONTENTS

I. METHODOLOGY

II. EXECUTIVE SUMMARY

• 1. MARKET OVERVIEW
  • Influencer Market Insights
  • World Market Trajectories
  • Tariff Impact on Global Supply Chain Patterns
  • Gallium Arsenide (GaAs) RF Devices - Global Key Competitors Percentage Market Share in 2025 (E)
  • Competitive Market Presence - Strong/Active/Niche/Trivial for Players Worldwide in 2025 (E)
• 2. FOCUS ON SELECT PLAYERS
• 3. MARKET TRENDS & DRIVERS
  • 5G Infrastructure Rollouts Throw the Spotlight on High-Linearity GaAs RF Device Performance
  • Growth in Mobile Handsets Propels Demand for GaAs-Based Power Amplifiers and Switches
  • Push for Greater RF Efficiency Expands Addressable Market for GaAs in Multi-Band Transceivers
  • High Data Rate and Bandwidth Applications Strengthen the Business Case for GaAs Front-End Modules
  • Military and Aerospace RF Requirements Drive Continued Use of Radiation-Resistant GaAs Devices
  • Emergence of Wi-Fi 6 and 6E Standards Accelerates Adoption of GaAs in Consumer Wireless Devices
  • Low Noise Characteristics of GaAs Support Use in LNA Modules Across Telecom and IoT Equipment
  • Compact, High-Frequency Antenna Designs Benefit from GaAs-Based Component Miniaturization
  • Base Station Densification in Urban Areas Spurs Growth in GaAs RF Power Devices
  • Foundry Advancements in GaAs-on-Si Processes Enable Cost-Efficient, Scalable Production
  • Growing Role in 3D Sensing and VCSEL Modules Drives Adoption in Smartphones and Automotive Systems
  • High-Temperature Operating Requirements in Harsh Environments Support Demand for GaAs RF Components
  • Specialty Epitaxy and Wafer Processing Innovations Improve Yield and Device Consistency
• 4. GLOBAL MARKET PERSPECTIVE
  • TABLE 1: World Gallium Arsenide (GaAs) RF Devices Market Analysis of Annual Sales in US$ Thousand for Years 2015 through 2030
  • TABLE 2: World Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
  • TABLE 3: World 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets for Years 2025 & 2030
  • TABLE 4: World Recent Past, Current & Future Analysis for Filters by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
  • TABLE 5: World 6-Year Perspective for Filters by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
  • TABLE 6: World Recent Past, Current & Future Analysis for Power Amplifiers by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
  • TABLE 7: World 6-Year Perspective for Power Amplifiers by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
  • TABLE 8: World Recent Past, Current & Future Analysis for Low Noise Amplifiers by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
  • TABLE 9: World 6-Year Perspective for Low Noise Amplifiers by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
  • TABLE 10: World Recent Past, Current & Future Analysis for Switch by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
  • TABLE 11: World 6-Year Perspective for Switch by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
  • TABLE 12: World Recent Past, Current & Future Analysis for Other Devices by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
  • TABLE 13: World 6-Year Perspective for Other Devices by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
  • TABLE 14: World Recent Past, Current & Future Analysis for Other Applications by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
  • TABLE 15: World 6-Year Perspective for Other Applications by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
  • TABLE 16: World Recent Past, Current & Future Analysis for Consumer Devices by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
  • TABLE 17: World 6-Year Perspective for Consumer Devices by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
  • TABLE 18: World Recent Past, Current & Future Analysis for Automotive by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
  • TABLE 19: World 6-Year Perspective for Automotive by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
  • TABLE 20: World Recent Past, Current & Future Analysis for Telecommunications by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
  • TABLE 21: World 6-Year Perspective for Telecommunications by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
  • TABLE 22: World Recent Past, Current & Future Analysis for Aerospace & Defense by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
  • TABLE 23: World 6-Year Perspective for Aerospace & Defense by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030

III. MARKET ANALYSIS

• UNITED STATES
  • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in the United States for 2025 (E)
  • TABLE 24: USA Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 25: USA 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
  • TABLE 26: USA Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 27: USA 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
• CANADA
  • TABLE 28: Canada Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 29: Canada 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
  • TABLE 30: Canada Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 31: Canada 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
• JAPAN
  • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Japan for 2025 (E)
  • TABLE 32: Japan Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 33: Japan 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
  • TABLE 34: Japan Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 35: Japan 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
• CHINA
  • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in China for 2025 (E)
  • TABLE 36: China Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 37: China 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
  • TABLE 38: China Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 39: China 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
• EUROPE
  • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Europe for 2025 (E)
  • TABLE 40: Europe Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Geographic Region - France, Germany, Italy, UK and Rest of Europe Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
  • TABLE 41: Europe 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Geographic Region - Percentage Breakdown of Value Sales for France, Germany, Italy, UK and Rest of Europe Markets for Years 2025 & 2030
  • TABLE 42: Europe Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 43: Europe 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
  • TABLE 44: Europe Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 45: Europe 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
• FRANCE
  • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in France for 2025 (E)
  • TABLE 46: France Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 47: France 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
  • TABLE 48: France Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 49: France 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
• GERMANY
  • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Germany for 2025 (E)
  • TABLE 50: Germany Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 51: Germany 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
  • TABLE 52: Germany Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 53: Germany 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
• ITALY
  • TABLE 54: Italy Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 55: Italy 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
  • TABLE 56: Italy Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 57: Italy 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
• UNITED KINGDOM
  • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in the United Kingdom for 2025 (E)
  • TABLE 58: UK Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 59: UK 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
  • TABLE 60: UK Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 61: UK 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
• REST OF EUROPE
  • TABLE 62: Rest of Europe Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 63: Rest of Europe 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
  • TABLE 64: Rest of Europe Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 65: Rest of Europe 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
• ASIA-PACIFIC
  • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Asia-Pacific for 2025 (E)
  • TABLE 66: Asia-Pacific Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 67: Asia-Pacific 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
  • TABLE 68: Asia-Pacific Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 69: Asia-Pacific 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
• REST OF WORLD
  • TABLE 70: Rest of World Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 71: Rest of World 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
  • TABLE 72: Rest of World Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
  • TABLE 73: Rest of World 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030

IV. COMPETITION