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1836409

射頻 GaAs 市場預測（至 2032 年）：按設備類型、頻寬、技術、應用和地區進行的全球分析

Radio Frequency GaAs Market Forecasts to 2032 - Global Analysis By Device Type, Frequency Band, Technology, Application, and By Geography
出版日期: | 出版商: Stratistics Market Research Consulting | 英文 200+ Pages | 商品交期: 2-3個工作天內

價格

根據 Stratistics MRC 的數據，全球射頻 (RF) GaAs 設備市場預計在 2025 年達到 23 億美元，到 2032 年將達到 39 億美元，預測期內的複合年成長率為 7.7%。

射頻 (RF) GaAs 裝置包括基於砷化鎵的元件，例如用於高頻無線通訊的放大器、開關和電晶體。 GaAs 裝置具有高電子遷移率、低雜訊以及在微波和毫米波頻率下的卓越性能，使其成為 5G、衛星通訊和國防應用的關鍵。市場成長的驅動力包括行動網路的快速擴張、航太和國防領域日益普及以及射頻元件整合度的不斷提高。

消費性電子產品的成長

家用電子電器的普及，尤其是智慧型手機、平板電腦和穿戴式裝置的普及，大大推動了對射頻砷化鎵裝置的需求。這些元件對於確保高效的無線通訊、高速資料傳輸和無縫連接至關重要。隨著消費者偏好轉向更智慧、連網程度更高的設備，對先進射頻元件的需求也日益成長。家用電子電器的普及直接促進了射頻砷化鎵元件市場的擴張，並凸顯了其在現代技術生態系統中所扮演的關鍵角色。

製造成本高

射頻 GaAs 裝置的製造涉及複雜的製程和專用材料，導致製造成本高昂。這些費用包括原料、精密加工和嚴格的品管措施。這些高成本抑制了潛在的製造商（尤其是在新興市場），並限制了 GaAs 技術的廣泛應用。因此，與製造 GaAs 裝置相關的經濟壁壘嚴重限制了市場的成長。

射頻前端模組的進步

射頻前端模組的技術創新為射頻砷化鎵裝置市場創造了巨大的機會。這些進步旨在提升射頻組件的性能、整合性和小型化程度。隨著5G網路和物聯網設備的普及，對緊湊、高效、高效能射頻模組的需求日益成長。射頻砷化鎵裝置憑藉其卓越的性能，能夠充分利用這些技術進步，推動市場擴張。

智慧財產權問題

智慧財產權 (IP) 問題，例如專利侵權和未經授權使用專有技術，對射頻 GaAs 裝置市場構成了重大威脅。此類問題可能導致法律糾紛、財務損失，並扼殺創新。製造商在保護技術進步方面可能面臨挑戰，這也可能阻礙投資和合作。解決 IP 問題對於營造安全、進步的市場環境至關重要。

COVID-19的影響：

新冠疫情擾亂了全球供應鏈，導致射頻砷化鎵裝置的生產和交付延遲。封鎖和限制措施導致工廠關閉、勞動力運轉率降低，並影響了產能。然而，疫情期間遠距辦公和線上教育帶來的通訊設備需求激增，部分抵消了這些挑戰，凸顯了射頻砷化鎵裝置的韌性及其對現代基礎設施的至關重要性。

預計在預測期內，6GHz 以下細分市場將佔據最大佔有率

由於廣泛應用於4G LTE、6GHz以下5G部署和Wi-Fi系統，預計6GHz以下頻段將在預測期內佔據最大的市場佔有率。此頻寬在覆蓋範圍和數據速度方面實現了良好的平衡，使其成為廣泛無線通訊的理想選擇。隨著5G基礎設施在全球範圍內的擴展，預計對6GHz以下頻段射頻組件的需求將會增加，從而鞏固其作為最大市場的地位。

異質接面雙極電晶體 (HBT) 領域預計將在預測期內以最高複合年成長率成長

異質接面雙極電晶體 (HBT) 市場預計將在預測期內實現最高成長率，這得益於其在高頻應用中的卓越性能。 HBT 具有更高的效率和線性度，非常適合包括 5G 網路在內的先進通訊系統。 HBT 能夠在更高頻率下工作，同時功耗更低，使其成為射頻應用的首選，並有助於實現預期的高成長率。

佔比最大的地區：

在預測期內，亞太地區預計將佔據最大的市場佔有率，這得益於其強大的半導體製造基礎設施以及對5G和物聯網技術的大量投資。中國、日本和韓國等國家在採用和部署先進的無線通訊系統方面處於領先地位。此外，該地區蓬勃發展的消費性電子產業也進一步推動了對射頻元件的需求。技術進步和市場需求的結合，使亞太地區成為射頻砷化鎵裝置市場的主導者。

複合年成長率最高的地區：

由於技術的快速進步和5G網路的普及，預計亞太地區將在預測期內實現最高的複合年成長率。該地區對技術創新和基礎設施建設的重視，加上不斷成長的消費群，正在推動市場的蓬勃發展。中國和印度等國家正在大力投資智慧城市計畫和數位轉型，進一步刺激了對射頻砷化鎵裝置的需求。這些因素使亞太地區成為射頻砷化鎵裝置快速成長的市場。

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目錄

第1章執行摘要

第2章 前言

  • 概述
  • 相關利益者
  • 調查範圍
  • 調查方法
    • 資料探勘
    • 數據分析
    • 數據檢驗
    • 研究途徑
  • 研究材料
    • 主要研究資料
    • 次級研究資訊來源
    • 先決條件

第3章市場走勢分析

  • 驅動程式
  • 抑制因素
  • 機會
  • 威脅
  • 技術分析
  • 應用分析
  • 新興市場
  • COVID-19的影響

第4章 波特五力分析

  • 供應商的議價能力
  • 買方的議價能力
  • 替代品的威脅
  • 新進入者的威脅
  • 競爭對手之間的競爭

5. 全球射頻（RF）GaAs市場（依設備類型）

  • 射頻放大器
  • 攪拌機和變頻器
  • 開關和衰減器
  • 振盪器和 VCO
  • 其他射頻元件

6. 全球射頻（RF）GaAs市場（依頻段）

  • 低於 6GHz
  • 6GHz～20GHz
  • 20GHz～60GHz
  • 60GHz或更高

7. 全球射頻（RF）GaAs市場（按技術）

  • 金屬半導體場場效電晶體（MESFET）
  • 高電子移動性電晶體（HEMT）
    • pHEMT（偽HEMT）
    • mHEMT（變質HEMT）
  • 異質接面雙極電晶體 (HBT)

8. 全球射頻（RF）GaAs市場（依應用）

  • 家電
    • 智慧型手機
    • 平板電腦和筆記型電腦
    • 穿戴式裝置
  • 通訊基礎設施
    • 行動電話基地台
    • 核心網與回程傳輸
    • CPE和FWA設備
  • 汽車和運輸
    • ADAS和雷達系統
    • 車通訊（V2X）
  • 航太和國防
    • 雷達與電子戰（EW）
    • 衛星通訊（SATCOM）
    • 航空電子設備
  • Wi-Fi和CATV
    • 路由器、閘道器和網路基地台
    • 纜線數據機和機上盒
  • 工業和醫學
    • 工業IoT
    • 醫學影像與設備

9. 全球射頻（RF）GaAs市場（按地區）

  • 北美洲
    • 美國
    • 加拿大
    • 墨西哥
  • 歐洲
    • 德國
    • 英國
    • 義大利
    • 法國
    • 西班牙
    • 其他歐洲國家
  • 亞太地區
    • 日本
    • 中國
    • 印度
    • 澳洲
    • 紐西蘭
    • 韓國
    • 其他亞太地區
  • 南美洲
    • 阿根廷
    • 巴西
    • 智利
    • 南美洲其他地區
  • 中東和非洲
    • 沙烏地阿拉伯
    • 阿拉伯聯合大公國
    • 卡達
    • 南非
    • 其他中東和非洲地區

第10章：重大進展

  • 協議、夥伴關係、合作和合資企業
  • 收購與合併
  • 新產品發布
  • 業務擴展
  • 其他關鍵策略

第11章 公司概況

  • Skyworks Solutions, Inc.
  • Qorvo, Inc.
  • Broadcom Inc.
  • WIN Semiconductors Corp.
  • Sumitomo Electric Industries, Ltd.
  • Murata Manufacturing Co., Ltd.
  • Analog Devices, Inc.
  • MACOM Technology Solutions Holdings, Inc.
  • Mitsubishi Electric Corporation
  • Qualcomm Incorporated
  • NXP Semiconductors NV
  • Cree, Inc.
  • Microchip Technology Inc.
  • Texas Instruments Incorporated
  • Maxim Integrated Products, Inc.
  • Mercury Systems, Inc.
  • ON Semiconductor Corporation
  • RFHIC Corporation
  • RichWave Technology Corporation
  • STMicroelectronics NV
Product Code: SMRC31533

According to Stratistics MRC, the Global Radio Frequency (RF) GaAs Devices Market is accounted for $2.3 billion in 2025 and is expected to reach $3.9 billion by 2032 growing at a CAGR of 7.7% during the forecast period. Radio Frequency (RF) GaAs Devices encompasses Gallium Arsenide-based components such as amplifiers, switches, and transistors used in high-frequency wireless communication. GaAs devices offer high electron mobility, low noise, and superior performance at microwave and millimeter-wave frequencies, making them vital for 5G, satellite communications, and defense applications. Market growth is driven by rapid expansion of mobile networks, increasing adoption in aerospace and defense, and advancements in RF device integration.

Market Dynamics:

Driver:

Consumer Electronics Growth

The proliferation of consumer electronics, particularly smartphones, tablets, and wearables, has significantly propelled the demand for RF GaAs devices. These devices are integral in ensuring efficient wireless communication, high-speed data transfer, and seamless connectivity. As consumer preferences shift towards smarter, more connected devices, the need for advanced RF components intensifies. This surge in consumer electronics directly contributes to the expansion of the RF GaAs device market, highlighting their essential role in modern technology ecosystems.

Restraint:

High Manufacturing Costs

The production of RF GaAs devices involves complex processes and specialized materials, leading to elevated manufacturing costs. These expenses encompass raw materials, precision fabrication, and stringent quality control measures. Such high costs can deter potential manufacturers, especially in emerging markets, limiting the widespread adoption of GaAs technology. Consequently, the financial barriers associated with GaAs device production pose a significant restraint to market growth.

Opportunity:

Advancements in RF Front-End Modules

Innovations in RF front-end modules present substantial opportunities for the RF GaAs device market. These advancements aim to enhance the performance, integration, and miniaturization of RF components. As 5G networks and IoT devices proliferate, the demand for compact, efficient, and high-performing RF modules escalates. RF GaAs devices, with their superior characteristics, are well-positioned to capitalize on these technological advancements, driving market expansion.

Threat:

Intellectual Property Concerns

Intellectual property (IP) issues, including patent infringements and unauthorized use of proprietary technologies, pose significant threats to the RF GaAs device market. Such concerns can lead to legal disputes, financial losses, and hindered innovation. Manufacturers may face challenges in protecting their technological advancements, which can deter investment and collaboration. Addressing IP concerns is crucial to fostering a secure and progressive market environment.

Covid-19 Impact:

The COVID-19 pandemic disrupted global supply chains, leading to delays in the production and delivery of RF GaAs devices. Lockdowns and restrictions resulted in factory shutdowns and reduced workforce availability, affecting manufacturing capacities. However, the surge in demand for communication devices during the pandemic, driven by remote work and online education, partially offset these challenges, highlighting the resilience and essential nature of RF GaAs devices in modern infrastructure.

The sub-6 GHz segment is expected to be the largest during the forecast period

The sub-6 GHz segment is expected to account for the largest market share during the forecast period due to its extensive application in 4G LTE, sub-6 GHz 5G deployments, and Wi-Fi systems. This frequency range offers a balance between coverage and data speed, making it ideal for widespread wireless communication. As global 5G infrastructure expands, the demand for RF components operating within the sub-6 GHz spectrum is projected to increase, solidifying its position as the largest segment in the market.

The heterojunction bipolar transistor (HBT) segment is expected to have the highest CAGR during the forecast period

Over the forecast period, the heterojunction bipolar transistor (HBT) segment is predicted to witness the highest growth rate driven by its superior performance in high-frequency applications. HBTs offer enhanced efficiency and linearity, making them suitable for advanced communication systems, including 5G networks. Their ability to operate at higher frequencies with reduced power consumption positions HBTs as a preferred choice in RF applications, contributing to their anticipated high growth rate.

Region with largest share:

During the forecast period, the Asia Pacific region is expected to hold the largest market share attributed to its robust semiconductor manufacturing infrastructure and significant investments in 5G and IoT technologies. Countries such as China, Japan, and South Korea are at the forefront of adopting and deploying advanced wireless communication systems. Additionally, the region's substantial consumer electronics industry further drives the demand for RF components. The combination of technological advancements and market demand positions Asia Pacific as the dominant player in the RF GaAs device market.

Region with highest CAGR:

Over the forecast period, the Asia Pacific region is anticipated to exhibit the highest CAGR driven by rapid technological advancements and increasing adoption of 5G networks. The region's focus on innovation and infrastructure development, coupled with a growing consumer base, contributes to its dynamic market expansion. Countries like China and India are investing heavily in smart city initiatives and digital transformation, further accelerating the demand for RF GaAs devices. These factors collectively position Asia Pacific as the fastest-growing market for RF GaAs devices.

Key players in the market

Some of the key players in Radio Frequency (RF) GaAs Devices Market include Skyworks Solutions, Inc., Qorvo, Inc., Broadcom Inc., WIN Semiconductors Corp., Sumitomo Electric Industries, Ltd., Murata Manufacturing Co., Ltd., Analog Devices, Inc., MACOM Technology Solutions Holdings, Inc., Mitsubishi Electric Corporation, Qualcomm Incorporated, NXP Semiconductors N.V., Cree, Inc., Microchip Technology Inc., Texas Instruments Incorporated, Maxim Integrated Products, Inc., Mercury Systems, Inc., ON Semiconductor Corporation, RFHIC Corporation, RichWave Technology Corporation, and STMicroelectronics N.V.

Key Developments:

In September 2025, WIN Semiconductors Corp. has unveiled a significant breakthrough in RF power amplifier technology with the launch of the NP12-1B - a cutting-edge 0.12-μm gate-length depletion-mode (d-mode) GaN HEMT process. This innovative solution, built on SiC substrates, is specifically designed for high-power applications operating across the K-band and V-band frequencies. The NP12-1B offers high linearity, power density, and efficiency, making it a candidate for next-generation RF and microwave systems.

In August 2025, Skyworks Solutions, Inc. released SKY53510/80/40 family of low-power DC to 3.1 GHz ultra-low additive jitter differential clock buffers, supporting high-speed communication such as 5G, PCIe 7.0, AI, and cloud networks. The devices operate from DC to 3.1 GHz with multiple outputs, improving signal integrity for diverse platforms.

In July 2025, Macom Technology has assumed full control of the GaN-on-SiC wafer fab it acquired from Wolfspeed in 2023 for $125m. Located in Research Triangle Park, North Carolina, the fab specialises in RF and microwave GaN-on-SiC process technologies for telecommunication system infrastructure and defence electronics. The facility is an accredited United States Department of Defense Trusted Foundry.

Device Types Covered:

  • RF Amplifiers
  • Mixers & Frequency Converters
  • Switches & Attenuators
  • Oscillators & VCOs
  • Other RF Components

Frequency Bands Covered:

  • Sub-6 GHz
  • 6 GHz - 20 GHz
  • 20 GHz - 60 GHz
  • Above 60 GHz

Technologies Covered:

  • Metal-Semiconductor Field-Effect Transistor (MESFET)
  • High Electron Mobility Transistor (HEMT)
  • Heterojunction Bipolar Transistor (HBT)

Applications Covered:

  • Consumer Electronics
  • Telecommunication Infrastructure
  • Automotive & Transportation
  • Aerospace & Defense
  • Wi-Fi & CATV
  • Industrial & Medical

Regions Covered:

  • North America
    • US
    • Canada
    • Mexico
  • Europe
    • Germany
    • UK
    • Italy
    • France
    • Spain
    • Rest of Europe
  • Asia Pacific
    • Japan
    • China
    • India
    • Australia
    • New Zealand
    • South Korea
    • Rest of Asia Pacific
  • South America
    • Argentina
    • Brazil
    • Chile
    • Rest of South America
  • Middle East & Africa
    • Saudi Arabia
    • UAE
    • Qatar
    • South Africa
    • Rest of Middle East & Africa

What our report offers:

  • Market share assessments for the regional and country-level segments
  • Strategic recommendations for the new entrants
  • Covers Market data for the years 2024, 2025, 2026, 2028, and 2032
  • Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations)
  • Strategic recommendations in key business segments based on the market estimations
  • Competitive landscaping mapping the key common trends
  • Company profiling with detailed strategies, financials, and recent developments
  • Supply chain trends mapping the latest technological advancements

Free Customization Offerings:

All the customers of this report will be entitled to receive one of the following free customization options:

  • Company Profiling
    • Comprehensive profiling of additional market players (up to 3)
    • SWOT Analysis of key players (up to 3)
  • Regional Segmentation
    • Market estimations, Forecasts and CAGR of any prominent country as per the client's interest (Note: Depends on feasibility check)
  • Competitive Benchmarking
    • Benchmarking of key players based on product portfolio, geographical presence, and strategic alliances

Table of Contents

1 Executive Summary

2 Preface

  • 2.1 Abstract
  • 2.2 Stake Holders
  • 2.3 Research Scope
  • 2.4 Research Methodology
    • 2.4.1 Data Mining
    • 2.4.2 Data Analysis
    • 2.4.3 Data Validation
    • 2.4.4 Research Approach
  • 2.5 Research Sources
    • 2.5.1 Primary Research Sources
    • 2.5.2 Secondary Research Sources
    • 2.5.3 Assumptions

3 Market Trend Analysis

  • 3.1 Introduction
  • 3.2 Drivers
  • 3.3 Restraints
  • 3.4 Opportunities
  • 3.5 Threats
  • 3.6 Technology Analysis
  • 3.7 Application Analysis
  • 3.8 Emerging Markets
  • 3.9 Impact of Covid-19

4 Porters Five Force Analysis

  • 4.1 Bargaining power of suppliers
  • 4.2 Bargaining power of buyers
  • 4.3 Threat of substitutes
  • 4.4 Threat of new entrants
  • 4.5 Competitive rivalry

5 Global Radio Frequency (RF) GaAs Market, By Device Type

  • 5.1 Introduction
  • 5.2 RF Amplifiers
  • 5.3 Mixers & Frequency Converters
  • 5.4 Switches & Attenuators
  • 5.5 Oscillators & VCOs
  • 5.6 Other RF Components

6 Global Radio Frequency (RF) GaAs Market, By Frequency Band

  • 6.1 Introduction
  • 6.2 Sub-6 GHz
  • 6.3 6 GHz - 20 GHz
  • 6.4 20 GHz - 60 GHz
  • 6.5 Above 60 GHz

7 Global Radio Frequency (RF) GaAs Market, By Technology

  • 7.1 Introduction
  • 7.2 Metal-Semiconductor Field-Effect Transistor (MESFET)
  • 7.3 High Electron Mobility Transistor (HEMT)
    • 7.3.1 pHEMT (Pseudomorphic HEMT)
    • 7.3.2 mHEMT (Metamorphic HEMT)
  • 7.4 Heterojunction Bipolar Transistor (HBT)

8 Global Radio Frequency (RF) GaAs Market, By Application

  • 8.1 Introduction
  • 8.2 Consumer Electronics
    • 8.2.1 Smartphones
    • 8.2.2 Tablets & Laptops
    • 8.2.3 Wearables
  • 8.3 Telecommunication Infrastructure
    • 8.3.1 Cellular Base Stations
    • 8.3.2 Core Network & Backhaul
    • 8.3.3 CPE & FWA Equipment
  • 8.4 Automotive & Transportation
    • 8.4.1 ADAS and Radar Systems
    • 8.4.2 Vehicle-to-Everything (V2X) Communication
  • 8.5 Aerospace & Defense
    • 8.5.1 Radar and Electronic Warfare (EW)
    • 8.5.2 Satellite Communication (SATCOM)
    • 8.5.3 Avionics
  • 8.6 Wi-Fi & CATV
    • 8.6.1 Routers, Gateways, and Access Points
    • 8.6.2 Cable Modems and Set-Top Boxes
  • 8.7 Industrial & Medical
    • 8.7.1 Industrial IoT
    • 8.7.2 Medical Imaging and Equipment

9 Global Radio Frequency (RF) GaAs Market, By Geography

  • 9.1 Introduction
  • 9.2 North America
    • 9.2.1 US
    • 9.2.2 Canada
    • 9.2.3 Mexico
  • 9.3 Europe
    • 9.3.1 Germany
    • 9.3.2 UK
    • 9.3.3 Italy
    • 9.3.4 France
    • 9.3.5 Spain
    • 9.3.6 Rest of Europe
  • 9.4 Asia Pacific
    • 9.4.1 Japan
    • 9.4.2 China
    • 9.4.3 India
    • 9.4.4 Australia
    • 9.4.5 New Zealand
    • 9.4.6 South Korea
    • 9.4.7 Rest of Asia Pacific
  • 9.5 South America
    • 9.5.1 Argentina
    • 9.5.2 Brazil
    • 9.5.3 Chile
    • 9.5.4 Rest of South America
  • 9.6 Middle East & Africa
    • 9.6.1 Saudi Arabia
    • 9.6.2 UAE
    • 9.6.3 Qatar
    • 9.6.4 South Africa
    • 9.6.5 Rest of Middle East & Africa

10 Key Developments

  • 10.1 Agreements, Partnerships, Collaborations and Joint Ventures
  • 10.2 Acquisitions & Mergers
  • 10.3 New Product Launch
  • 10.4 Expansions
  • 10.5 Other Key Strategies

11 Company Profiling

  • 11.1 Skyworks Solutions, Inc.
  • 11.2 Qorvo, Inc.
  • 11.3 Broadcom Inc.
  • 11.4 WIN Semiconductors Corp.
  • 11.5 Sumitomo Electric Industries, Ltd.
  • 11.6 Murata Manufacturing Co., Ltd.
  • 11.7 Analog Devices, Inc.
  • 11.8 MACOM Technology Solutions Holdings, Inc.
  • 11.9 Mitsubishi Electric Corporation
  • 11.10 Qualcomm Incorporated
  • 11.11 NXP Semiconductors N.V.
  • 11.12 Cree, Inc.
  • 11.13 Microchip Technology Inc.
  • 11.14 Texas Instruments Incorporated
  • 11.15 Maxim Integrated Products, Inc.
  • 11.16 Mercury Systems, Inc.
  • 11.17 ON Semiconductor Corporation
  • 11.18 RFHIC Corporation
  • 11.19 RichWave Technology Corporation
  • 11.20 STMicroelectronics N.V.

List of Tables

  • Table 1 Global Radio Frequency (RF) GaAs Market Outlook, By Region (2024-2032) ($MN)
  • Table 2 Global Radio Frequency (RF) GaAs Market Outlook, By Device Type (2024-2032) ($MN)
  • Table 3 Global Radio Frequency (RF) GaAs Market Outlook, By RF Amplifiers (2024-2032) ($MN)
  • Table 4 Global Radio Frequency (RF) GaAs Market Outlook, By Mixers & Frequency Converters (2024-2032) ($MN)
  • Table 5 Global Radio Frequency (RF) GaAs Market Outlook, By Switches & Attenuators (2024-2032) ($MN)
  • Table 6 Global Radio Frequency (RF) GaAs Market Outlook, By Oscillators & VCOs (2024-2032) ($MN)
  • Table 7 Global Radio Frequency (RF) GaAs Market Outlook, By Other RF Components (2024-2032) ($MN)
  • Table 8 Global Radio Frequency (RF) GaAs Market Outlook, By Frequency Band (2024-2032) ($MN)
  • Table 9 Global Radio Frequency (RF) GaAs Market Outlook, By Sub-6 GHz (2024-2032) ($MN)
  • Table 10 Global Radio Frequency (RF) GaAs Market Outlook, By 6 GHz - 20 GHz (2024-2032) ($MN)
  • Table 11 Global Radio Frequency (RF) GaAs Market Outlook, By 20 GHz - 60 GHz (2024-2032) ($MN)
  • Table 12 Global Radio Frequency (RF) GaAs Market Outlook, By Above 60 GHz (2024-2032) ($MN)
  • Table 13 Global Radio Frequency (RF) GaAs Market Outlook, By Technology (2024-2032) ($MN)
  • Table 14 Global Radio Frequency (RF) GaAs Market Outlook, By Metal-Semiconductor Field-Effect Transistor (MESFET) (2024-2032) ($MN)
  • Table 15 Global Radio Frequency (RF) GaAs Market Outlook, By High Electron Mobility Transistor (HEMT) (2024-2032) ($MN)
  • Table 16 Global Radio Frequency (RF) GaAs Market Outlook, By pHEMT (Pseudomorphic HEMT) (2024-2032) ($MN)
  • Table 17 Global Radio Frequency (RF) GaAs Market Outlook, By mHEMT (Metamorphic HEMT) (2024-2032) ($MN)
  • Table 18 Global Radio Frequency (RF) GaAs Market Outlook, By Heterojunction Bipolar Transistor (HBT) (2024-2032) ($MN)
  • Table 19 Global Radio Frequency (RF) GaAs Market Outlook, By Application (2024-2032) ($MN)
  • Table 20 Global Radio Frequency (RF) GaAs Market Outlook, By Consumer Electronics (2024-2032) ($MN)
  • Table 21 Global Radio Frequency (RF) GaAs Market Outlook, By Smartphones (2024-2032) ($MN)
  • Table 22 Global Radio Frequency (RF) GaAs Market Outlook, By Tablets & Laptops (2024-2032) ($MN)
  • Table 23 Global Radio Frequency (RF) GaAs Market Outlook, By Wearables (2024-2032) ($MN)
  • Table 24 Global Radio Frequency (RF) GaAs Market Outlook, By Telecommunication Infrastructure (2024-2032) ($MN)
  • Table 25 Global Radio Frequency (RF) GaAs Market Outlook, By Cellular Base Stations (2024-2032) ($MN)
  • Table 26 Global Radio Frequency (RF) GaAs Market Outlook, By Core Network & Backhaul (2024-2032) ($MN)
  • Table 27 Global Radio Frequency (RF) GaAs Market Outlook, By CPE & FWA Equipment (2024-2032) ($MN)
  • Table 28 Global Radio Frequency (RF) GaAs Market Outlook, By Automotive & Transportation (2024-2032) ($MN)
  • Table 29 Global Radio Frequency (RF) GaAs Market Outlook, By ADAS and Radar Systems (2024-2032) ($MN)
  • Table 30 Global Radio Frequency (RF) GaAs Market Outlook, By Vehicle-to-Everything (V2X) Communication (2024-2032) ($MN)
  • Table 31 Global Radio Frequency (RF) GaAs Market Outlook, By Aerospace & Defense (2024-2032) ($MN)
  • Table 32 Global Radio Frequency (RF) GaAs Market Outlook, By Radar and Electronic Warfare (EW) (2024-2032) ($MN)
  • Table 33 Global Radio Frequency (RF) GaAs Market Outlook, By Satellite Communication (SATCOM) (2024-2032) ($MN)
  • Table 34 Global Radio Frequency (RF) GaAs Market Outlook, By Avionics (2024-2032) ($MN)
  • Table 35 Global Radio Frequency (RF) GaAs Market Outlook, By Wi-Fi & CATV (2024-2032) ($MN)
  • Table 36 Global Radio Frequency (RF) GaAs Market Outlook, By Routers, Gateways, and Access Points (2024-2032) ($MN)
  • Table 37 Global Radio Frequency (RF) GaAs Market Outlook, By Cable Modems and Set-Top Boxes (2024-2032) ($MN)
  • Table 38 Global Radio Frequency (RF) GaAs Market Outlook, By Industrial & Medical (2024-2032) ($MN)
  • Table 39 Global Radio Frequency (RF) GaAs Market Outlook, By Industrial IoT (2024-2032) ($MN)
  • Table 40 Global Radio Frequency (RF) GaAs Market Outlook, By Medical Imaging and Equipment (2024-2032) ($MN)

Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.