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市場調查報告書
商品編碼
1858838
氮化鎵(GaN)功率晶片在電動車領域的市場機會、成長促進因素、產業趨勢分析及預測(2025-2034年)Gallium Nitride (GaN) Power Chips for EVs Market Opportunity, Growth Drivers, Industry Trend Analysis, and Forecast 2025 - 2034 |
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2024 年全球電動車用氮化鎵 (GaN) 功率晶片市場價值為 2.97 億美元,預計到 2034 年將以 15.5% 的複合年成長率成長至 15 億美元。

這一強勁成長與汽車製造商日益大規模地整合高頻、高密度轉換架構的趨勢相符。隨著電動車的普及和充電基礎設施的不斷完善,車輛及其配套系統對高效能電力電子產品的整體需求正在加速成長。 2024年,全球電動車銷量達1,700萬輛,佔新車總銷量的20%以上。全球電動車保有量已成長至近5,800萬輛,持續推動對更有效率電力轉換解決方案的需求。基於氮化鎵(GaN)的車載充電器因其在效率和尺寸縮小方面的顯著優勢而備受青睞。它們能夠提高功率密度並減輕重量,從而提升電動車的續航里程和系統整合度。氮化鎵技術的最新進展也支援高密度雙向運行,這對於未來的車網互動(V2G)應用至關重要。從分立元件到整合式驅動器、開關和保護電路的氮化鎵模組的轉變,進一步提升了系統性能,降低了電磁干擾,並改善了散熱管理。公私合作在加速這些寬禁帶解決方案的商業化過程中發揮了關鍵作用。
| 市場範圍 | |
|---|---|
| 起始年份 | 2024 |
| 預測年份 | 2025-2034 |
| 起始值 | 2.97億美元 |
| 預測值 | 15億美元 |
| 複合年成長率 | 15.5% |
2024年,橫向GaN元件市場佔有率達到70%,預計2034年將以16.1%的複合年成長率成長。由於這些裝置適用於車用充電器、輔助系統和工作電壓高達650V的DC-DC轉換器,因此已成為電動車電力電子設備的核心。得益於矽基AlGaN/GaN HEMT架構,這些元件具有高電子遷移率和高擊穿場強,與傳統的矽基元件相比,在高電壓下導通電阻顯著降低。
2024年,電壓範圍在100V至650V的中壓氮化鎵(GaN)裝置佔據了67%的市場佔有率,預計2025年至2034年間將以16%的複合年成長率成長。此電壓等級涵蓋了眾多電動車應用,包括車載充電器和直流-直流轉換器,適用於目前的400V電池平台和未來的800V架構。在此電壓範圍內,氮化鎵裝置具有卓越的開關速度和效率,能夠實現緊湊輕巧的電源轉換系統,這對於高密度電動車應用至關重要。
2024年,中國用於電動車的氮化鎵(GaN)功率晶片市場規模預計將達到7,340萬美元。作為全球最大的電動車市場,中國約佔全球電動車銷量的三分之二,光是2023年就交付了超過800萬輛。如此龐大的市場規模為GaN組件創造了巨大的潛在市場,因為每輛電動車和充電站都需要高性能的功率電子裝置。此外,政府對新能源汽車的大力支持、國內半導體研發的蓬勃發展以及電動車基礎設施的廣泛部署,都進一步鞏固了中國在電動車領域的領先地位,使其超越了印度、韓國和日本等其他區域競爭對手。
積極引領電動車氮化鎵 (GaN) 功率晶片市場的關鍵企業包括 Transphorm、GaN Systems、英飛凌科技、羅姆半導體、Navitas、EPC、Power Integrations、Innoscience、意法半導體和德州儀器。為了鞏固自身市場地位,GaN 功率晶片領域的領導企業正大力投資研發,以開發高性能、符合汽車級標準的 GaN 解決方案,從而支援更高的功率密度和更佳的熱效率。許多廠商正從分立產品轉向整合解決方案,例如採用共封裝半橋模組,將驅動器、開關和保護功能整合於一體,以簡化設計、最大限度地降低電磁干擾 (EMI) 並提高可靠性。此外,這些企業也積極尋求與汽車製造商和一級供應商建立策略合作夥伴關係,以加速在電動車平台的設計中勝出。
The Global Gallium Nitride (GaN) Power Chips for EVs Market was valued at USD 297 million in 2024 and is estimated to grow at a CAGR of 15.5% to reach USD 1.5 billion by 2034.

The robust expansion aligns with automakers increasingly integrating high-frequency, high-density conversion architectures at scale. As EV adoption grows alongside expanding charging infrastructure, the overall demand for efficient power electronics in both vehicles and supporting systems is accelerating. In 2024, global EV sales reached 17 million and accounted for over 20% of all new car sales. The global EV fleet has grown to nearly 58 million, fueling consistent demand for more efficient power conversion solutions. GaN-based onboard chargers are gaining traction due to their significant advantages in efficiency and size reduction. They enable increased power density and lower weight, improving EV range and system integration. Recent advancements in GaN technology also support high-density, bidirectional operations, a key feature for future vehicle-to-grid applications. The transition from discrete components to integrated GaN modules combining drivers, switches, and protection circuits has further enhanced system performance, reduced electromagnetic interference, and improved thermal management. Public-private efforts have been instrumental in accelerating the commercialization of these wide-bandgap solutions.
| Market Scope | |
|---|---|
| Start Year | 2024 |
| Forecast Year | 2025-2034 |
| Start Value | $297 Million |
| Forecast Value | $1.5 Billion |
| CAGR | 15.5% |
In 2024, the lateral GaN devices segment held a 70% share and is projected to grow at a CAGR of 16.1% through 2034. These devices have become the backbone of EV power electronics due to their suitability for onboard chargers, auxiliary systems, and DC-DC converters operating up to 650 V. Their high electron mobility and elevated breakdown field strength, enabled by AlGaN/GaN HEMT architecture on silicon, allow for significantly lower on-resistance at higher voltages when compared to traditional silicon-based components.
The medium-voltage GaN devices, ranging from 100 V to 650 V, held a 67% share in 2024 and are forecasted to grow at a CAGR of 16% between 2025 and 2034. This voltage class covers many EV applications, including onboard chargers and DC-DC converters in both current 400 V battery platforms and future 800 V architectures. Within this range, GaN devices deliver superior switching speeds and efficiency, enabling compact and lightweight power conversion systems critical for high-density EV applications.
China Gallium Nitride (GaN) Power Chips for EVs Market generated USD 73.4 million in 2024. As the largest EV market globally, China accounted for roughly two-thirds of global EV sales, delivering over 8 million units in 2023 alone. This massive scale has created a vast addressable market for GaN components, as every vehicle and charging site requires high-performance power electronics. Additionally, strong government support for NEVs, domestic semiconductor development, and widespread deployment of EV infrastructure continue to solidify China's leadership over other regional players such as India, South Korea, and Japan.
Key companies actively shaping the Gallium Nitride (GaN) Power Chips for EVs Market include Transphorm, GaN Systems, Infineon Technologies, ROHM Semiconductor, Navitas, EPC, Power Integrations, Innoscience, STMicroelectronics, and Texas Instruments. To enhance their positioning, leading companies in the GaN power chip sector are heavily investing in R&D to develop high-performance, automotive-qualified GaN solutions that support higher power densities and better thermal efficiency. Many players are shifting from discrete products to integrated solutions such as co-packaged half-bridge modules combining drivers, switches, and protection features to simplify design, minimize EMI, and improve reliability. Strategic partnerships with automakers and Tier 1 suppliers are also being pursued to accelerate design wins in EV platforms.