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氮化鎵 (GaN) 功率元件市場預測（至 2032 年）：按元件類型、電壓範圍、應用、最終用戶和地區進行的全球分析

Gallium Nitride (GaN) Power Device Market Forecasts to 2032 - Global Analysis By Device Type (Power Discrete Devices, Power Integrated Circuits (ICs), and Power Modules), Voltage Range, Application, End User and By Geography
出版日期: | 出版商: Stratistics Market Research Consulting | 英文 200+ Pages | 商品交期: 2-3個工作天內

價格

根據 Stratistics MRC 的數據，全球氮化鎵 (GaN) 功率元件市場預計在 2025 年達到 6.158 億美元，到 2032 年將達到 72.052 億美元，預測期內的複合年成長率為 42.1%。

氮化鎵 (GaN) 功率元件是一種專注於半導體的裝置，與矽基元件相比，其效率、開關速度和功率密度均更勝一籌。 GaN 裝置在家用電子電器、汽車、可再生能源、資料中心和通訊基礎設施領域發揮關鍵作用。快速充電、電動車和節能系統的需求日益成長，推動了其應用。 5G 網路以及航太和國防應用的進步進一步拓展了相關機會。研發和生產投入的不斷增加，使 GaN 市場成為下一代電力電子的關鍵推動力。

根據 IEEE Spectrum 報告，GaN 裝置的效率提高了 40%，並且正在被電動車、5G基地台和航太應用所採用。

電動車（EV）和可再生能源的成長

電動車 (EV) 的日益普及以及全球向可再生能源的轉變是氮化鎵 (GaN) 功率元件市場的關鍵驅動力。 GaN 的卓越效率和緊湊性使其成為電動車的理想選擇，可增強車載充電器和逆變器的功率轉換。此外，在可再生能源領域，GaN 的卓越性能也使太陽能逆變器和能源儲存系統系統受益。電動車和可再生能源之間的這種協同效應將加速對 GaN 功率元件的需求，使其成為向永續能源解決方案轉型的關鍵組件。

來自矽基技術的競爭

矽基元件技術成熟、經濟高效，並廣泛應用於各行各業。向GaN過渡需要對新的製造流程和基礎設施進行大量投資。此外，GaN裝置的初始成本較高，這可能會阻礙潛在的採用者，尤其是在價格敏感的市場。這種對矽技術的根深蒂固的偏好，對GaN功率元件的廣泛應用構成了顯著的挑戰。

資料中心和通訊基礎設施的擴展

資料中心和通訊基礎設施的快速擴張為GaN功率元件帶來了巨大的機會。這些領域需要高效的電源解決方案來管理不斷成長的資料負載和能耗。 GaN能夠處理高壓和高頻，同時最大限度地降低能量損耗，使其成為這些應用中電源和穩壓器的理想選擇。隨著數位轉型的加速，資料中心和通訊網路對高效電源解決方案的需求預計將推動GaN技術的普及。

影響投資的經濟因素

通貨膨脹、供應鏈中斷和原料成本波動等經濟不確定性對GaN功率元件市場構成威脅。這些因素可能導致製造成本上升，並導致新技術投資延遲。此外，景氣衰退可能會減少有潛力採用GaN裝置的產業的資本支出。這些經濟挑戰可能會阻礙GaN功率元件市場的成長和發展，並影響市場擴張的前景。

COVID-19的影響：

新冠疫情最初擾亂了GaN功率元件市場，原因是全球供應鏈挑戰和製造業停工。然而，對數位基礎設施的依賴日益增加以及隨之而來的數據消費成長，加速了對高效電源解決方案的需求。此外，疫情凸顯了醫療保健和物流等各行業對節能技術的需求。隨著各行各業適應新的營運規範，對能源效率數位化的日益重視，推動了GaN功率裝置市場的復甦。

預計 200V-600V 段在預測期內將佔最大佔有率

預計200V-600V電壓段將在預測期內佔據最大的市場佔有率。此段應用範圍廣泛，包括消費性電子產品、工業機械和電動車。此電壓範圍內的GaN元件具有更高的效率和熱性能，非常適合高功率應用。 200V-600V電壓範圍內的GaN元件的多功能性和性能優勢是預測其在市場上佔據主導地位的關鍵因素。

預計電動車 (EV) 充電器部分在預測期內將實現最高的複合年成長率。

電動車 (EV) 充電器領域預計將在預測期內呈現最高成長率。 GaN 的高效率和緊湊特性在電動車充電基礎設施中尤其有利，因為此類基礎設施對空間和能源效率至關重要。隨著電動車越來越普及，對採用 GaN 技術的先進充電解決方案的需求預計將推動該領域的快速擴張。

佔比最高的地區：

預計北美將在預測期內佔據最大的市場佔有率。該地區對技術創新的關注，加上對電動車和可再生能源的大量投資，正在推動對基於GaN的解決方案的需求。此外，北美主要半導體製造商和研究機構的存在將加速GaN技術的開發和應用，從而鞏固該地區在市場上的主導地位。

複合年成長率最高的地區：

預計亞太地區在預測期內的複合年成長率最高。快速工業化、電動車的廣泛普及以及對可再生能源基礎設施的大量投資等因素都推動了這一成長。中國、日本和韓國等國家處於領先地位，半導體製造業的進步和對節能技術日益成長的需求推動了該地區GaN功率裝置市場的擴張。

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目錄

第1章執行摘要

第2章 前言

  • 概述
  • 相關利益者
  • 調查範圍
  • 調查方法
    • 資料探勘
    • 數據分析
    • 數據檢驗
    • 研究途徑
  • 研究材料
    • 主要研究資料
    • 次級研究資訊來源
    • 先決條件

第3章市場走勢分析

  • 驅動程式
  • 抑制因素
  • 機會
  • 威脅
  • 應用分析
  • 最終用戶分析
  • 新興市場
  • COVID-19的影響

第4章 波特五力分析

  • 供應商的議價能力
  • 買方的議價能力
  • 替代品的威脅
  • 新進入者的威脅
  • 競爭對手之間的競爭

5. 全球氮化鎵（GaN）功率元件市場（依元件類型）

  • 功率分離式元件元件
  • 功率積體電路（IC）
  • 電源模組

6. 全球氮化鎵（GaN）功率元件市場（依電壓範圍）

  • 200V以下
  • 200V～600V
  • 600V以上

7. 全球氮化鎵（GaN）功率元件市場（依應用）

  • 動力驅動
  • 電源
  • 馬達驅動
  • 光伏（PV）逆變器
  • 電動車（EV）充電器
  • 資料中心和通訊基礎設施

8. 全球氮化鎵（GaN）功率元件市場（依最終用戶）

  • 車
  • 家電
  • 工業自動化
  • 可再生能源
  • 通訊
  • 軍事和航太

9. 全球氮化鎵（GaN）功率元件市場（按地區）

  • 北美洲
    • 美國
    • 加拿大
    • 墨西哥
  • 歐洲
    • 德國
    • 英國
    • 義大利
    • 法國
    • 西班牙
    • 其他歐洲國家
  • 亞太地區
    • 日本
    • 中國
    • 印度
    • 澳洲
    • 紐西蘭
    • 韓國
    • 其他亞太地區
  • 南美洲
    • 阿根廷
    • 巴西
    • 智利
    • 其他南美
  • 中東和非洲
    • 沙烏地阿拉伯
    • 阿拉伯聯合大公國
    • 卡達
    • 南非
    • 其他中東和非洲地區

第10章：重大進展

  • 協議、夥伴關係、合作和合資企業
  • 收購與合併
  • 新產品發布
  • 業務擴展
  • 其他關鍵策略

第11章 公司概況

  • Wolfspeed, Inc.
  • Qorvo, Inc.
  • MACOM Technology Solutions Holdings, Inc.
  • Infineon Technologies AG
  • Sumitomo Electric Industries, Ltd.
  • Navitas Semiconductor
  • Mitsubishi Electric Corporation
  • Efficient Power Conversion Corporation（EPC）
  • GaN Systems
  • NXP Semiconductors NV
  • Texas Instruments Incorporated
  • Toshiba Electronic Devices & Storage Corporation
  • ROHM Co., Ltd.
  • Analog Devices, Inc.
  • ON Semiconductor Corporation
  • Panasonic Corporation
  • Fujitsu Limited
  • Taiwan Semiconductor Manufacturing Company（TSMC）
  • Nexperia Holding BV
  • Innoscience
Product Code: SMRC31448

According to Stratistics MRC, the Global Gallium Nitride (GaN) Power Device Market is accounted for $615.8 million in 2025 and is expected to reach $7205.2 million by 2032 growing at a CAGR of 42.1% during the forecast period. The Gallium Nitride (GaN) Power Device focuses on semiconductors that provide superior efficiency, switching speed, and power density compared to silicon-based devices. GaN devices are critical in consumer electronics, automotive, renewable energy, data centers, and telecom infrastructure. Growing demand for fast charging, electric vehicles, and energy-efficient systems is fueling adoption. Advancements in 5G networks, aerospace, and defense applications further expand opportunities. With increasing investments in R&D and production, the GaN market is positioned as a key enabler of next-generation power electronics.

According to IEEE Spectrum, GaN devices offer 40% higher efficiency and are being adopted in EVs, 5G base stations, and aerospace applications.

Market Dynamics:

Driver:

Growth in Electric Vehicles (EVs) and Renewable Energy

The surge in electric vehicle (EV) adoption and the global shift towards renewable energy are pivotal drivers for the Gallium Nitride (GaN) power device market. GaN's superior efficiency and compactness make it ideal for EVs, enhancing power conversion in onboard chargers and inverters. Additionally, the renewable energy sector benefits from GaN's performance in solar inverters and energy storage systems. This synergy between EVs and renewable energy accelerates the demand for GaN power devices, positioning them as essential components in the transition to sustainable energy solutions.

Restraint:

Competition from Silicon-Based Technologies

Silicon components are well-established, cost-effective, and widely adopted across various industries. The transition to GaN requires substantial investment in new manufacturing processes and infrastructure. Moreover, the higher initial cost of GaN devices can deter potential adopters, especially in price-sensitive markets. This entrenched preference for silicon technologies presents a notable challenge to the widespread adoption of GaN power devices.

Opportunity:

Expansion in Data Centers and Telecom Infrastructure

The rapid expansion of data centers and telecom infrastructure presents a significant opportunity for GaN power devices. These sectors demand high-efficiency power solutions to manage increasing data loads and energy consumption. GaN's ability to handle high voltages and frequencies with minimal energy loss makes it an attractive option for power supplies and voltage regulators in these applications. As digital transformation accelerates, the need for efficient power solutions in data centers and telecom networks is expected to drive the adoption of GaN technology.

Threat:

Economic Factors Affecting Investment

Economic uncertainties, such as inflation, supply chain disruptions, and fluctuating raw material costs, pose threats to the GaN power device market. These factors can lead to increased production costs and delayed investments in new technologies. Additionally, economic downturns may result in reduced capital expenditure from industries that are potential adopters of GaN devices. Such economic challenges can hinder the growth and development of the GaN power device market, affecting its expansion prospects.

Covid-19 Impact:

The COVID-19 pandemic initially disrupted the GaN power device market due to global supply chain challenges and manufacturing halts. However, the increased reliance on digital infrastructure and the subsequent rise in data consumption accelerated the demand for efficient power solutions. Moreover, the pandemic highlighted the need for energy-efficient technologies in various sectors, including healthcare and logistics. As industries adapted to new operational norms, the GaN power device market witnessed resurgence, driven by the growing emphasis on energy efficiency and digitalization.

The 200V-600V segment is expected to be the largest during the forecast period

The 200V-600V segment is expected to account for the largest market share during the forecast period. This segment caters to a wide array of applications, including consumer electronics, industrial machinery, and electric vehicles. GaN devices within this voltage range offer enhanced efficiency and thermal performance, making them suitable for high-power applications. The versatility and performance benefits of GaN devices in the 200V-600V range are key factors contributing to their projected dominance in the market.

The electric vehicle (EV) chargers segment is expected to have the highest CAGR during the forecast period

Over the forecast period, the electric vehicle (EV) chargers segment is predicted to witness the highest growth rate. GaN's ability to deliver high efficiency and compactness is particularly beneficial in EV charging infrastructure, where space and energy efficiency are critical. As the adoption of electric vehicles continues to rise, the demand for advanced charging solutions that incorporate GaN technology is expected to grow, driving the segment's rapid expansion.

Region with largest share:

During the forecast period, the North America region is expected to hold the largest market share. The region's strong emphasis on technological innovation, coupled with substantial investments in electric vehicles and renewable energy, fuels the demand for GaN-based solutions. Additionally, the presence of leading semiconductor manufacturers and research institutions in North America accelerates the development and adoption of GaN technologies, reinforcing the region's dominant position in the market.

Region with highest CAGR:

Over the forecast period, the Asia Pacific region is anticipated to exhibit the highest CAGR. Factors such as rapid industrialization, increasing adoption of electric vehicles, and significant investments in renewable energy infrastructure contribute to this growth. Countries like China, Japan, and South Korea are at the forefront, with advancements in semiconductor manufacturing and a growing demand for energy-efficient technologies driving the region's expansion in the GaN power device market.

Key players in the market

Some of the key players in Gallium Nitride (GaN) Power Device Market include Wolfspeed, Inc., Qorvo, Inc., MACOM Technology Solutions Holdings, Inc., Infineon Technologies AG, Sumitomo Electric Industries, Ltd., Navitas Semiconductor, Mitsubishi Electric Corporation, Efficient Power Conversion Corporation (EPC), GaN Systems, NXP Semiconductors N.V., Texas Instruments Incorporated, Toshiba Electronic Devices & Storage Corporation, ROHM Co., Ltd., Analog Devices, Inc., ON Semiconductor Corporation, Panasonic Corporation, Fujitsu Limited, Taiwan Semiconductor Manufacturing Company (TSMC), Nexperia Holding B.V., and Innoscience.

Key Developments:

In September 2025, Wolfspeed, Inc. has officially introduced its 200mm silicon carbide (SiC) materials products to the commercial market, marking a pivotal advancement in its ongoing effort to accelerate the industry's shift from traditional silicon to SiC technologies. ollowing an initial phase in which the company made 200mm SiC available to select customers, the strong feedback and clear benefits prompted Wolfspeed to move forward with a full-scale release.

In June 2025, Qorvo(R) a leading global provider of connectivity and power solutions, is expanding its SATCOM portfolio with the launch of a new K-band power amplifier (PA) designed to improve the performance and integration of Low Earth Orbit (LEO) satellites. Developed to meet the evolving demands of next-generation payloads, Qorvo's newest PA further expands its proven GaN-on-SiC SATCOM portfolio, giving system designers a more efficient, compact and scalable option for space-based payloads.

In May 2025, Infineon Technologies AG announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon's own foundry, based on its proven CoolGan(TM) technology. Designed to operate in harsh space environments, the company's new product is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794.

Device Types Covered:

  • Power Discrete Devices
  • Power Integrated Circuits (ICs)
  • Power Modules

Voltage Ranges Covered:

  • Below 200V
  • 200V-600V
  • Above 600V

Applications Covered:

  • Power Drives
  • Power Supplies
  • Motor Drives
  • Photovoltaic (PV) Inverters
  • Electric Vehicle (EV) Chargers
  • Data Centers and Telecom Infrastructure

End Users Covered:

  • Automotive
  • Consumer Electronics
  • Industrial Automation
  • Renewable Energy
  • Telecommunications
  • Military and Aerospace

Regions Covered:

  • North America
    • US
    • Canada
    • Mexico
  • Europe
    • Germany
    • UK
    • Italy
    • France
    • Spain
    • Rest of Europe
  • Asia Pacific
    • Japan
    • China
    • India
    • Australia
    • New Zealand
    • South Korea
    • Rest of Asia Pacific
  • South America
    • Argentina
    • Brazil
    • Chile
    • Rest of South America
  • Middle East & Africa
    • Saudi Arabia
    • UAE
    • Qatar
    • South Africa
    • Rest of Middle East & Africa

What our report offers:

  • Market share assessments for the regional and country-level segments
  • Strategic recommendations for the new entrants
  • Covers Market data for the years 2024, 2025, 2026, 2028, and 2032
  • Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations)
  • Strategic recommendations in key business segments based on the market estimations
  • Competitive landscaping mapping the key common trends
  • Company profiling with detailed strategies, financials, and recent developments
  • Supply chain trends mapping the latest technological advancements

Free Customization Offerings:

All the customers of this report will be entitled to receive one of the following free customization options:

  • Company Profiling
    • Comprehensive profiling of additional market players (up to 3)
    • SWOT Analysis of key players (up to 3)
  • Regional Segmentation
    • Market estimations, Forecasts and CAGR of any prominent country as per the client's interest (Note: Depends on feasibility check)
  • Competitive Benchmarking
    • Benchmarking of key players based on product portfolio, geographical presence, and strategic alliances

Table of Contents

1 Executive Summary

2 Preface

  • 2.1 Abstract
  • 2.2 Stake Holders
  • 2.3 Research Scope
  • 2.4 Research Methodology
    • 2.4.1 Data Mining
    • 2.4.2 Data Analysis
    • 2.4.3 Data Validation
    • 2.4.4 Research Approach
  • 2.5 Research Sources
    • 2.5.1 Primary Research Sources
    • 2.5.2 Secondary Research Sources
    • 2.5.3 Assumptions

3 Market Trend Analysis

  • 3.1 Introduction
  • 3.2 Drivers
  • 3.3 Restraints
  • 3.4 Opportunities
  • 3.5 Threats
  • 3.6 Application Analysis
  • 3.7 End User Analysis
  • 3.8 Emerging Markets
  • 3.9 Impact of Covid-19

4 Porters Five Force Analysis

  • 4.1 Bargaining power of suppliers
  • 4.2 Bargaining power of buyers
  • 4.3 Threat of substitutes
  • 4.4 Threat of new entrants
  • 4.5 Competitive rivalry

5 Global Gallium Nitride (GaN) Power Device Market, By Device Type

  • 5.1 Introduction
  • 5.2 Power Discrete Devices
  • 5.3 Power Integrated Circuits (ICs)
  • 5.4 Power Modules

6 Global Gallium Nitride (GaN) Power Device Market, By Voltage Range

  • 6.1 Introduction
  • 6.2 Below 200V
  • 6.3 200V-600V
  • 6.4 Above 600V

7 Global Gallium Nitride (GaN) Power Device Market, By Application

  • 7.1 Introduction
  • 7.2 Power Drives
  • 7.3 Power Supplies
  • 7.4 Motor Drives
  • 7.5 Photovoltaic (PV) Inverters
  • 7.6 Electric Vehicle (EV) Chargers
  • 7.7 Data Centers and Telecom Infrastructure

8 Global Gallium Nitride (GaN) Power Device Market, By End User

  • 8.1 Introduction
  • 8.2 Automotive
  • 8.3 Consumer Electronics
  • 8.4 Industrial Automation
  • 8.5 Renewable Energy
  • 8.6 Telecommunications
  • 8.7 Military and Aerospace

9 Global Gallium Nitride (GaN) Power Device Market, By Geography

  • 9.1 Introduction
  • 9.2 North America
    • 9.2.1 US
    • 9.2.2 Canada
    • 9.2.3 Mexico
  • 9.3 Europe
    • 9.3.1 Germany
    • 9.3.2 UK
    • 9.3.3 Italy
    • 9.3.4 France
    • 9.3.5 Spain
    • 9.3.6 Rest of Europe
  • 9.4 Asia Pacific
    • 9.4.1 Japan
    • 9.4.2 China
    • 9.4.3 India
    • 9.4.4 Australia
    • 9.4.5 New Zealand
    • 9.4.6 South Korea
    • 9.4.7 Rest of Asia Pacific
  • 9.5 South America
    • 9.5.1 Argentina
    • 9.5.2 Brazil
    • 9.5.3 Chile
    • 9.5.4 Rest of South America
  • 9.6 Middle East & Africa
    • 9.6.1 Saudi Arabia
    • 9.6.2 UAE
    • 9.6.3 Qatar
    • 9.6.4 South Africa
    • 9.6.5 Rest of Middle East & Africa

10 Key Developments

  • 10.1 Agreements, Partnerships, Collaborations and Joint Ventures
  • 10.2 Acquisitions & Mergers
  • 10.3 New Product Launch
  • 10.4 Expansions
  • 10.5 Other Key Strategies

11 Company Profiling

  • 11.1 Wolfspeed, Inc.
  • 11.2 Qorvo, Inc.
  • 11.3 MACOM Technology Solutions Holdings, Inc.
  • 11.4 Infineon Technologies AG
  • 11.5 Sumitomo Electric Industries, Ltd.
  • 11.6 Navitas Semiconductor
  • 11.7 Mitsubishi Electric Corporation
  • 11.8 Efficient Power Conversion Corporation (EPC)
  • 11.9 GaN Systems
  • 11.10 NXP Semiconductors N.V.
  • 11.11 Texas Instruments Incorporated
  • 11.12 Toshiba Electronic Devices & Storage Corporation
  • 11.13 ROHM Co., Ltd.
  • 11.14 Analog Devices, Inc.
  • 11.15 ON Semiconductor Corporation
  • 11.16 Panasonic Corporation
  • 11.17 Fujitsu Limited
  • 11.18 Taiwan Semiconductor Manufacturing Company (TSMC)
  • 11.19 Nexperia Holding B.V.
  • 11.20 Innoscience

List of Tables

  • Table 1 Global Gallium Nitride (GaN) Power Device Market Outlook, By Region (2024-2032) ($MN)
  • Table 2 Global Gallium Nitride (GaN) Power Device Market Outlook, By Device Type (2024-2032) ($MN)
  • Table 3 Global Gallium Nitride (GaN) Power Device Market Outlook, By Power Discrete Devices (2024-2032) ($MN)
  • Table 4 Global Gallium Nitride (GaN) Power Device Market Outlook, By Power Integrated Circuits (ICs) (2024-2032) ($MN)
  • Table 5 Global Gallium Nitride (GaN) Power Device Market Outlook, By Power Modules (2024-2032) ($MN)
  • Table 6 Global Gallium Nitride (GaN) Power Device Market Outlook, By Voltage Range (2024-2032) ($MN)
  • Table 7 Global Gallium Nitride (GaN) Power Device Market Outlook, By Below 200V (2024-2032) ($MN)
  • Table 8 Global Gallium Nitride (GaN) Power Device Market Outlook, By 200V-600V (2024-2032) ($MN)
  • Table 9 Global Gallium Nitride (GaN) Power Device Market Outlook, By Above 600V (2024-2032) ($MN)
  • Table 10 Global Gallium Nitride (GaN) Power Device Market Outlook, By Application (2024-2032) ($MN)
  • Table 11 Global Gallium Nitride (GaN) Power Device Market Outlook, By Power Drives (2024-2032) ($MN)
  • Table 12 Global Gallium Nitride (GaN) Power Device Market Outlook, By Power Supplies (2024-2032) ($MN)
  • Table 13 Global Gallium Nitride (GaN) Power Device Market Outlook, By Motor Drives (2024-2032) ($MN)
  • Table 14 Global Gallium Nitride (GaN) Power Device Market Outlook, By Photovoltaic (PV) Inverters (2024-2032) ($MN)
  • Table 15 Global Gallium Nitride (GaN) Power Device Market Outlook, By Electric Vehicle (EV) Chargers (2024-2032) ($MN)
  • Table 16 Global Gallium Nitride (GaN) Power Device Market Outlook, By Data Centers and Telecom Infrastructure (2024-2032) ($MN)
  • Table 17 Global Gallium Nitride (GaN) Power Device Market Outlook, By End User (2024-2032) ($MN)
  • Table 18 Global Gallium Nitride (GaN) Power Device Market Outlook, By Automotive (2024-2032) ($MN)
  • Table 19 Global Gallium Nitride (GaN) Power Device Market Outlook, By Consumer Electronics (2024-2032) ($MN)
  • Table 20 Global Gallium Nitride (GaN) Power Device Market Outlook, By Industrial Automation (2024-2032) ($MN)
  • Table 21 Global Gallium Nitride (GaN) Power Device Market Outlook, By Renewable Energy (2024-2032) ($MN)
  • Table 22 Global Gallium Nitride (GaN) Power Device Market Outlook, By Telecommunications (2024-2032) ($MN)
  • Table 23 Global Gallium Nitride (GaN) Power Device Market Outlook, By Military and Aerospace (2024-2032) ($MN)

Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.