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市場調查報告書
商品編碼
1737073
直通矽晶穿孔(TSV) 技術的全球市場規模:依產品、應用、地區及預測Global Through Silicon Via (TSV) Technology Market Size By Product (Via First TSV, Via Middle TSV), By Application (Image Sensors, 3D Package, 3D Integrated Circuits), By Geographic Scope And Forecast |
2024 年直通矽晶穿孔(TSV) 技術市場規模價值為 351.2 億美元,預計到 2032 年將達到 1922.9 億美元,2026 年至 2032 年的複合年成長率為 26.12%。
直通矽晶穿孔(TSV) 技術的應用也呈指數級成長。 TSV 主要用於3D積體電路 (IC) 的製造和 IC 封裝,而 IC 封裝是智慧電子製造中最關鍵的組件之一。此外,與傳統的覆晶和打線接合相比,TSV 還能提供更高密度的鍵結、更小的空間和更佳的連接性。 TSV 的效用使其廣泛應用於各種電子元件,例如微處理單元 (MPU)、可程式邏輯元件 (PLD)、動態隨機存取記憶體 (DRAM)、圖形電子晶片、CMOS 影像感測器等等。
定義全球直通矽晶穿孔(TSV) 技術市場
直通矽晶穿孔(TSV) 技術是實現3D (3D) 矽晶圓與3D積體電路 (IC) 整合的核心與最重要的技術。它能夠實現最短的晶片間互連,並具有最小的墊片尺寸和間距。使用直通矽晶穿孔(TSV) 技術進行3D晶片堆疊互連,正成為 CMOS 成像器、記憶體和 MEMS 的先進封裝技術。 TSV 技術與傳統互連技術相比具有許多優勢,包括更低的功耗、更高的電氣性能、更高的密度、由於資料頻寬更寬而帶來的更高頻寬以及更輕的重量。
直通矽晶穿孔(TSV) 是指完全貫穿矽晶圓或晶粒晶圓的垂直電氣連接。 TSV 是一種用於創建 3D 積體電路和 3D 封裝的高性能互連技術,取代了打線接合和覆晶。此技術可顯著提高裝置和互連密度,並縮短連接長度。直通矽晶穿孔(TSV) 記憶體的市場驅動應用包括:整合邏輯功能和記憶體以提高手持裝置的視訊品質;多晶片高效能 DRAM;以及用於固態硬碟的堆疊NAND快閃記憶體快閃記憶體。
直通矽晶穿孔(TSV) 技術的全球市場概覽
半導體晶片在電力、醫療、能源、汽車、電動車、電機控制應用以及航太和國防等各行各業的應用日益增多,推動了全球直通矽晶穿孔(TSV) 技術市場的成長。發光二極體)在產品中的日益普及,刺激了更高產量、更低成本和更高密度裝置的生產。與2D封裝不同,採用 TSV 技術的3D (3D) 封裝可實現更高密度的垂直佈線。
此外,由於晶片結構小型化,對電子設備小型化的需求日益成長,這推動了直通矽晶穿孔(TSV) 技術的發展。汽車、通訊、醫療保健和工業生產等各個領域都需要半導體積體電路的小型化。此外,用於 3D 晶片封裝的 TSV 技術需求日益成長,以縮短佈線長度、降低功率損耗、提高訊號速度並降低功耗,這直通矽晶穿孔(TSV) 技術市場的成長創造了巨大的機會。
然而,供應商必須投入大量資金來設計用於生產小型積體電路的設備。此外,製造過程複雜且耗時。此外,隨著半導體積體電路製造製程設計日益複雜,供應商需要增加對封裝和組裝設備的投入,以提高半導體積體電路的性能,這將對半導體晶片製造商產生一定程度的影響。
相關調查
Through Silicon Via (TSV) Technology Market size was valued at USD 35.12 Billion in 2024 and is projected to reach USD 192.29 Billion by 2032, growing at a CAGR of 26.12% from 2026 to 2032.
The growing adoption of smart electronics products such as smartphones, laptops, tablets, and many others is leading to the exponential growth of Through Silicon Via (TSV) Technology. Since, these TSVs are majorly used in building 3D integrated circuits (ICs), and the IC packages which are one of the most vital components in smart electronics manufacturing. Besides this, the TSVs provide higher-density bonds, require minimal space, and provide the best connectivity compared to conventional flip-chips and wire bonds. The usability of TSVs and various electronic components such as microprocessing units (MPUs), PLDs, DRAMs, electronic chips for graphics and CMOS image sensors, and many others.
Global Through Silicon Via (TSV) Technology Market Definition
Through-silicon via (TSV) technology is the central and most crucial technology enabling the integration of the three-dimensional (3D) Si and 3D integrated circuit (IC). It offers the ability for the shortest chip-to-chip interconnections, and the interconnection of the smallest pad size and pitch. Stacking chips in three dimensional with through-silicon via (TSV) technology as interconnects is an emerging advanced packaging technology for CMOS imagers, memories, and MEMS. TSV technology offers several advantages as compared to traditional interconnection technology, including lower power consumption, better electrical performance, higher density, wider data width and thus bandwidth, and lighter weight.
A through-silicon via (TSV) refers to a vertical electrical connection that passes entirely through a wafer of silicone or dies. TSVs are higher-performance interconnect methods utilized to create 3D integrated circuits and 3D packages as an alternative to wire-bond and flip-chips. In this technique, the device and interconnect density is significantly higher, and the connection length becomes shorter. Market-driven application of through-silicon via (TSV) engaging memory comprises the integration of logic functions and memory for the improved video quality on handheld devices, multi-chip high-performance DRAM, and stacked NAND flash memory for solid-state drives.
Global Through Silicon Via (TSV) Technology Market Overview
The increasing use of semiconductor chips' applications in various industries such as the power, medical, energy, automobiles, electric vehicles, motor control applications, and aerospace and defense is accelerating the growth of the Global Through Silicon Via (TSV) Technology Market. The rising use of light-emitting diodes in products has stimulated the production of higher capacity, lower cost, and higher density devices. Using three-dimensional (3D) packaging in TSV technology, unlike 2D packaging, allows for a higher density of vertical interconnections.
Furthermore, the increasing demand for the miniaturization of the electronic device owing to the compact size chip architecture is driving the development of through silicon via (TSV) technology. Various sectors, such as automotive, telecommunications, healthcare, and industrial manufacturing created the requirement for miniaturized semiconductor ICs. Also, the growing demand for TSV technology for 3D chip packaging to reduce interconnection length, reduce power dissipation, increase signal speed, and reduce power consumption presents a great opportunity for the Through Silicon Via (TSV) Technology Market growth.
However, the market vendors have to capitalize a lot on designing equipment to manufacture compact ICs. In addition to this, the production process is complex and also consumes more time. Also, the designing of the semiconductor ICs manufacturing process is becoming complex, therefore it would have a moderate impact on semiconductor chip manufacturers as they need to invest a great deal in packaging and assembly equipment to improve the performance of semiconductor ICs.
The Global Through Silicon Via (TSV) Technology Market is segmented on the basis of Product, Application, and Geography.
Based on Product, the market is segmented into Via First TSV, Via Middle TSV, and Via Last TSV. The Via Middle TSV segment accounted for the largest market share in 2021. Via-middle TSV approaches typically insert the TSV module after completion of the FEOL phases, which consists of various high-temperature processes but before BEOL processing, where multi-layer metal routing is carried out. Via-middle TSVs are presently a prevalent option for advanced three-dimensional (3D) ICs and also for interposer stacks.
Based on Application, the market is segmented into Image Sensors, 3D Package, 3D Integrated Circuits, and Others. The 3D Integrated Circuits segment accounted for the largest market share in 2021. 3-dimensional integration of integrated circuits (3DIC) using Through Silicon Vias (TSV) is one of the most promising but also challenging technology. Furthermore, increasing penetration of smartphones, feature phones & tablets, and technological advancements in consumer electronic devices are major factors driving the growth of the global 3D integrated circuit with the Through Silicon Via (TSV) Technology Market.
The "Global Through Silicon Via (TSV) Technology Market" study report will provide valuable insight with an emphasis on the global market. The major players in the market are AMS, Hua Tian Technology, Samsung, Amkor Micralyne, Inc., Intel Corporation, TESCAN, Dow Inc., WLCSP, ALLVIA, Applied Materials, International Business Machines Corporation, Tezzaron Semiconductors, STATS ChipPAC Ltd, Xilinx, Renesas Electronics Corporation, Texas Instruments. Besides this, much new entrance and Through Silicon Via manufacturers from the respective economies are forming supply agreements with the Smart Electronics manufacturing companies to attain a competitive edge in the market.
Our market analysis also entails a section solely dedicated to such major players wherein our analysts provide an insight into the financial statements of all the major players, along with its product benchmarking and SWOT analysis. The competitive landscape section also includes key development strategies, market share, and market ranking analysis of the above-mentioned players globally.
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