汽車功率半導體及模組（SiC、GaN）產業（2025）

採用 800V+ 架構的汽車銷售量將成長十倍以上，這將推動 SiC/GaN 功率晶片在汽車領域的應用。

第三代半導體（由碳化矽 (SiC) 和氮化鎵 (GaN) 等寬帶隙材料製造）具有更寬的帶隙、更高的擊穿場強、更高的導熱係數、更高的電子飽和速度和更高的抗輻射性能，使其適用於製造高溫、高頻、抗輻射和高功率裝置。這些特性使其成為提升新能源車領域功率半導體性能的首選。

SiC 功率元件具有高耐壓性、低損耗和高頻特性，使其適用於高溫、高壓和高功率應用。它們廣泛應用於主驅動逆變器、車載充電器 (OBC) 和 DC/DC 轉換器等關鍵部件，使其成為高壓架構的理想合作夥伴。隨著 800V 高壓平台逐漸成為主流，成本持續下降，SiC 的應用範圍將從主驅動逆變器擴展到汽車壓縮機和主動懸吊等領域。

GaN 功率元件具有高開關頻率、耐高溫和低損耗等優勢，可望用於製造功率元件、高頻元件和光電元件。 GaN 的電子遷移率高於 SiC，因此能夠實現更高的開關頻率。然而，其功率範圍並不寬，且漏源導通電阻受溫度影響顯著，導致在高電流和高溫環境下性能下降。目前，GaN 在汽車領域，尤其是在車載充電器和 DC-DC 轉換器方面，正在取得進展。

根據ResearchInChina資料庫顯示，2022年中國僅有13款採用800-1000V高壓架構的乘用車在售。 2024年，這數字超過47款。到2025年上半年，預計將達到70款。目前在中國銷售的800V高壓架構乘用車涵蓋了保時捷、賓士等豪華品牌，蔚來、小鵬、捷克等中端品牌，以及比亞迪、躍躍欲試等售價在15萬-20萬元人民幣的車型。

預計2024年，中國將售出73.9萬輛採用800-1000V高壓架構的乘用車，佔國內新能源乘用車總銷量的6.9%。預計到 2025 年，這些乘用車的滲透率將達到 10.9%，銷量將達到 149.5 萬輛。到 2030 年，滲透率預計將超過 35%，出貨量將超過 745 萬輛，是 2024 年銷量的 10 倍以上。

未來預計將出現更多採用 800V 高壓架構的全碳化矽 (SiC) 純電動車。在該架構中，空調壓縮機（3-10kW）、電池組、逆變器（5-600kW）、直流充電站、直流/直流轉換器（1-5kW）和車載電腦（3-30kW）等關鍵零件都將採用碳化矽元件。受技術創新驅動，預計2024年中國乘用車用SiC/GaN功率晶片（用於汽車、充電設備等）的需求量將達到7,300萬顆，2025年將達到1.46億顆，較去年同期成長98.6%。到2030年，需求量預計將達到6.08億顆，標誌著該產業正處於快速發展階段。

本報告對中國汽車功率半導體及模組產業進行了分析，提供了應用場景、市場規模、發展趨勢和供應鏈產能分佈等資訊。

目錄

第一章：功率半導體概述

• 定義與分類
• 汽車應用場景
• 第三代半導體：汽車用碳化矽功率元件產業及市場
• 第三代半導體：汽車用氮化鎵功率元件產業及市場
• 汽車功率半導體認證標準

第二章：汽車功率半導體應用場景及市場

• 應用場景：主驅動逆變器
• 應用場景：車用充電器
• 應用場景：高壓直流轉換器
• 應用場景：電動壓縮機
• 應用場景：直流充電器
• 碳化矽/氮化鎵市場規模中國乘用車晶片市場

第三章 汽車功率元件發展趨勢及供應鏈產能分佈

• 發展趨勢（一）：嵌入式封裝技術
• 發展趨勢（二）：三電壓級SiC模組
• 發展趨勢（三）：Si/SiC混合功率模組
• 國內外汽車功率半導體廠商產能佈局
• 國內外第三代功率半導體材料廠商產能佈局
• 國內外第三代半導體功率元件廠商營收

第四章 OEM功率半導體及模組佈局策略

• 佈局策略
• 比亞迪
• 李汽車
• 小鵬汽車
• 蔚來汽車
• 躍躍汽車
• 小米汽車
• 吉利汽車
• 上汽國際
• 廣汽集團
• 一汽紅旗
• 奇瑞汽車
• 長城汽車
• 長安車
• 東風汽車
• 和諧智慧旅行聯盟 (HIMA)
• 北汽集團
• 特斯拉
• 福斯汽車
• BMW汽車
• 戴姆勒汽車
• 本田汽車
• 豐田汽車

第五章：國外汽車功率半導體供應商

• 英飛凌
• 昂森美半導體
• 意法半導體
• 三菱電機
• 富士電機
• 威世Intertechnology
• 東芝
• 電裝

第六章：國內汽車功率半導體供應商

• 思蘭微電子
• 中車時代電子
• 星能
• 聯諾科技
• 艾科光電
• 華潤微電子
• 聞泰科技
• 貝思半導體
• NCE Power
• 方正微電子

第七章：國內外第三代功率半導體材料供應商

• Wolfspeed（原科銳）
• 相干半導體
• 納維達斯半導體

SiC/GaN Research: Sales volume of 800V+ architecture-based vehicles will increase more than 10 times, and hybrid carbon (SiC+IGBT) power modules are rapidly being deployed in vehicles.

Sales volume of 800V+ architecture-based vehicles will increase more than 10 times, driving the installation of SiC/GaN power chips in vehicles.

The third-generation semiconductors, such as those made from wide-bandgap materials like silicon carbide (SiC) and gallium nitride (GaN), are better suited for manufacturing high-temperature, high-frequency, radiation-resistant, and high-power devices due to their wider bandgap, higher breakdown electric field, higher thermal conductivity, greater electron saturation velocity, and higher radiation resistance. They are the primary choice for upgrading the performance of power semiconductors in the new energy vehicle sector.

SiC power devices possess feature high voltage resistance, low loss, and high frequency, catering to high-temperature, high-voltage and high-power applications. They are widely used in key components such as main drive inverters, on-board chargers (OBCs), and DC/DC converters. They are also the best partners for high-voltage architectures. As 800V high-voltage platforms become the mainstream and costs continue to decline, SiC will expand from main drive inverters to fields such as automotive compressors and active suspensions.

GaN power devices have advantages such as high switching frequency, high temperature resistance, and low loss, and can be used to make power, radio frequency, and optoelectronic devices. Because GaN has a higher electron mobility than SiC, GaN can achieve a higher switching frequency. However, its power range is not particularly wide, and its drain-source on-resistance is greatly affected by temperature, thus it has performance disadvantages in high-current and high-temperature scenarios. Currently, GaN has made progress in the automotive field covering OBCs and DC-DC converters.

According to ResearchInChina's database, there were only 13 800-1000V high-voltage architecture passenger car models on sale in China in 2022. In 2024, the number exceeded 47. By the first half of 2025, the number had reached 70. China's 800V high-voltage architecture passenger cars on sale extend from luxury brands such as Porsche and Mercedes-Benz to mid-range brands such as NIO, Xpeng, and Zeekr, and then to models priced at RMB150,000-200,000 such as those from BYD and Leapmotor.

In 2024, 739,000 passenger cars based on 800-1000V high-voltage architectures were sold in China, accounting for 6.9% of the total sales of new energy passenger cars in the country. It is projected that by 2025, the penetration rate of such passenger cars will reach 10.9%, with the sales volume reaching 1.495 million units. By 2030, the penetration rate will exceed 35%, with shipments exceeding 7.45 million units, more than 10 times the sales volume in 2024.

In the future, more all-SiC BEVs will emerge, involving 800V high-voltage architectures. Under such architectures, key components including air conditioning compressors (3-10kW), battery packs, inverters (5-600kW), DC charging piles, DC/DC converters (1-5kW), and OBCs (3-30kW) will all use SiC devices. Driven by technology, the demand for SiC/GaN power chips (automotive grade, charging equipment, etc.) for passenger cars in China hit 73 million units in 2024, and is expected to reach 146 million units in 2025, representing a year-on-year spike of 98.6%. By 2030, the demand will be 608 million units, and the industry will enter a rapid development stage

While 800V high-voltage platforms are being installed on a large scale in vehicles, BYD is gradually upgrading its vehicles to 1000V platforms, and raising the withstand voltage of automotive SiC power devices to 1500V-1700V accordingly.

BYD has taken the lead in releasing its next-generation automotive-grade 1500V high-power SiC power chip. Equipped with the Super e-Platform, it secures an electronic control efficiency of 99.7% and a cost reduction of 40% compared to imports.

Utilizing stacked laser welding technology and optimizing the chip interconnect structure, it has successfully reduced the stray inductance by 75% and dynamic loss by 30% compared to traditional packaging;

The peak current can reach 1000A, with overcurrent capacity enhanced by 10%;

The charging power can be up to 1000kW, nearly 70% higher than the industry's mainstream 600kW fast charging technology;

The nano-silver sintering technology reduces the thermal resistance of the bonding layer by 95%, improves reliability and extends lifespan by more than 5 times.

By combining Cuclipbonding technology with silicon nitride AMB substrates, the chip size is reduced by 50% and the power density is doubled.

This is the industry's first mass-produced automotive-grade SiC power chip with the highest voltage level, first seen in the Han L EV, Tang L EV, Yangwang U7 and Denza N9.

Dongfeng eπ plans to adopt a 1700V SiC power module on its next-generation ultra-1000V platform. This module was officially launched in June 2025, with a 60% reduction in switching loss. The second-generation SiC chip technology optimizes the gate drive design (supporting +15~+18V drive voltage) and low parasitic inductance packaging (<=10nH), slashing Eon/Eoff loss. Compared to traditional IGBTs, the system efficiency jumps from 96% to 99%, which can extend the vehicle's range by more than 3%.

SiC power devices continue to introduce new packaging technologies to improve efficiency, and hybrid carbon (SiC+IGBT) power modules are rapidly being deployed in vehicles.

SiC power devices continue to introduce new technologies to improve efficiency, such as embedded packaging technology and three-voltage-level topology. Many OEMs and Tier 1 suppliers have launched corresponding solutions.

Embedded packaging technology: High-voltage power chips (such as SiC and GaN chips) are directly embedded in the PCB, replacing traditional discrete power modules, which can significantly improve the high-density integration and performance of electric drive controllers. For the same outflow requirements, the amount of semiconductors used can be reduced by 20%-30% compared to frame-packaged modules. In the WLTC cycle, compared with the 800V SiC frame package, the 800V SiC embedded package reduces energy loss by about 60%, and cuts down switching loss and conduction loss. Moreover, under the same temperature conditions, the lifespan of embedded power modules is several times that of frame-packaged modules.

Three-voltage-level topology: A three-voltage-level inverter circuit can output high and low voltage levels by turning on the upper and lower transistors, and output zero level by clamping the middle diode. Compared to the two-voltage-level solution, the three-voltage-level solution has better waveform quality and less noise; switching loss are reduced by about 75%, device heat generation is less, and lifespan is longer; ripple current is lower, reducing equipment vibration and heat generation, resulting in more stable operation; filter design is more flexible, inductor and capacitor values can be reduced, and size and weight are reduced by 30%-50%; and dynamic response is faster.

GAC Group's new ADiMOTION adopts GAC Quark Electric Drive 2.0. Equipped with an embedded power module, the size reduces by 80% and the maximum electronic control efficiency hits 99.9%. Under a 1000V high-voltage platform, the drive motor power density reaches 17.29kW/kg, and the CLTC operating efficiency of the electric drive system is as high as 93%.

The Chip Inlay Power Board (CIPB), developed by ZF's Asia Pacific R&D team, achieves ultimate inverter performance by embedding power chips into the PCB, reducing stray inductance, increasing volumetric power density, and thus gaining the ultimate inverter performance. At the same time, this technology enables compact and lightweight designs that are compatible with market-standard wafers or dies and allow for free adjustment of semiconductor type, chip quantity, and size.

Geely's latest E-DHT 11-in-1 hybrid system is the first to adopt a hybrid carbon electronic control system, which combines IGBTs and SiC TPAK discrete devices. IGBTs excel at stable output in low-to-medium frequency scenarios, while SiC is more efficient in high-voltage, high-frequency environments. The synergy between the two can enable the power control module to achieve an efficiency of over 99%.

Among them, the hybrid carbon module adopts three-voltage-level SiC high-efficiency technology and has two packaging forms: plastic-encapsulated module and SiC TPAK discrete device. Meanwhile, the SiC stepless boost module can maintain stable system voltage even when the battery level is below 20% through global voltage optimization.

Hybrid carbon (SiC+IGBT) power modules help balance performance and cost and are rapidly being mass-produced and deployed in vehicles. SiC and Si-based power electronics can be used in combination at different levels to achieve a balance between performance and cost.

In inverters built with discrete components, SiC and Si devices can be flexibly mixed and connected in parallel, and SiC and Si can even be mixed at the module level or the device level (bare die).

In a BEV equipped with multiple motors, the main motor inverter can leverage SiC, while the auxiliary motor can use Si. For two-phase or open-winding motors, both power modules can be SiC, Si, or a combination of both.

XPeng's next-generation hybrid SiC coaxial electric drive technology balances cost and performance by optimizing the hybrid application of SiC and silicon-based devices, and has been applied to vehicle models such as the new G9.

The electric drive system boasts a CLTC efficiency of up to 93.5%.

While reducing the amount of SiC chips by 60%, the output power is raised by 10%;

With a coaxial motor layout and compact design, the electric drive system is 30% smaller and 7.5% lighter.

This electric drive technology is based on a global 800V SiC platform and can work in conjunction with 5C superchargeable AI batteries.

GaN devices are entering the automotive OBC field, and may continue to grow in the future.

So far, OEMs including Tesla, Changan Automobile, Mazda, and Geely VREMT, as well as Tier 1 suppliers such as Inovance, UAES and Sungrow, have taken the lead in adopting GaN solutions in the OBC field. From the perspective of GaN suppliers, Innoscience, Infineon, and Navitas are launching automotive electronics.

Inovance's next-generation 6.6kW GaN automotive 2-in-1 power supply integrates an OBC and a DC-DC converter. It uses GaN power devices to achieve an industry-leading charging efficiency of 96% and a total power density of 4.8kW/L. Compared to traditional Si/SiC solutions, the power density is increased by 30% to 4.8kW/L, the average efficiency of the OBC at full load exceeds 96%, and the operating efficiency of the DC/DC converter is as high as 97.09%@700W. Compared to traditional Si/SiC solutions, the weight is reduced by 20%.

This product is suitable for vehicles with battery voltage ranges from 200V to 500V. It has optimized both the power circuit and the high-frequency high-power PCB wiring technology to reduce interference and loss caused by high-speed switching. The magnetic components of cascaded/parallel converters are integrated into a single design, systematically optimizing size and loss. For heat dissipation, a water channel structure with an integrated profile design increases the heat dissipation area, and reduces thermal resistance, size and weight.

In addition to OBCs, GaN chips, with their narrow pulse, high peak current, and high efficiency, can achieve longer detection distances and reduce power loss and temperature rise, better catering to automotive LiDAR systems. Furthermore, the application of GaN in DC-DC converters is expanding. GaN devices are gradually penetrating the new energy vehicle field, and their potential growth should not be ignored.

Table of Contents

Chapter 1 Overview of Power Semiconductors

• 1.1 Definition and Classification
• Definition
• Classification
• Materials
• Materials: SiC
• Materials: GaN (1)
• Materials: GaN (2)
• Materials: GaN (3)
• Materials: GaN VS SiC (1)
• Materials: GaN VS SiC (2)
• Materials: The Third-Generation Semiconductor Materials Will Exist for a Long Time
• 1.2 Automotive Application Scenarios
• Automotive Application
• Automotive Application: SiC/GaN power devices are mainly used in "electric drive, battery, electric control" systems
• Automotive Application: Development process of GaN power devices in the automotive field (1)
• Automotive Application: Development process of GaN power devices in the automotive field (2)
• Automotive Application: Development process of GaN power devices in the automotive field (3)
• Automotive Application: Potential application fields of GaN power devices
• 1.3 Third-Generation Semiconductors: Automotive-Grade SiC Power Device Industry and Market
• Automotive-Grade SiC Power Devices: The Best Partner for High-Voltage Architectures
• Automotive-Grade SiC Power Devices: Advantages of 800-1000V SiC Technology
• Automotive-Grade SiC Power Devices: SiC Industry Chain
• Automotive-Grade SiC Power Devices: SiC Supply Chain
• Automotive-Grade SiC Power Devices: SiC Supply Chain - SiC Substrates and Epitaxial Technology
• Automotive-Grade SiC Power Devices: SiC Supply Chain - SiC Substrate Development Trends
• Automotive-Grade SiC Power Devices: SiC Supply Chain - SiC Substrate Price
• Automotive-Grade SiC Power Devices: SiC Supply Chain - Mainstream SiC Substrate Vendors
• Automotive-Grade SiC Power Devices: SiC Supply Chain - Epitaxial Cost and Price
• Automotive-Grade SiC Power Devices: SiC Supply Chain - Epitaxial Capacity Layout
• Automotive-Grade SiC Power Devices: SiC Supply Chain - Packaging Technology (1)
• Automotive-Grade SiC Power Devices: SiC Supply Chain - Packaging Technology (2)
• Automotive-Grade SiC Power Devices: SiC Supply Chain - Packaging Technology (3)
• Automotive-Grade SiC Power Devices: SiC Supply Chain - Packaging Technology (4)
• Automotive-Grade SiC Power Devices: 800-1000V Power Device Packaging Cases
• Automotive-Grade SiC Power Devices: Global Supplier Competitive Landscape
• Automotive-Grade SiC Power Devices: Global SiC Power Device Industry Landscape
• Automotive-Grade SiC Power Devices: Conductive SiC Power Devices Used in New Energy Vehicles
• Automotive-Grade SiC Power Devices: SiC Application Solutions in Vehicle Models with 800-1000V Architectures
• Automotive-Grade SiC Power Devices: List of Vehicle Models with SiC Power Devices and 800-1000V Architectures
• Automotive-Grade SiC Power Devices: Development Trends of SiC in New Energy Passenger Cars with 800-1000V Architectures
• Automotive-Grade SiC Power Devices: List of Vehicle Models Equipped with SiC Power Devices and 1200-1500V Architectures
• Automotive-Grade SiC Power Devices: Competitive Landscape of SiC Power Devices for New Energy Passenger Cars
• Automotive-Grade SiC Power Devices: 650-1500V SiC Power Chips
• Automotive-Grade SiC Power Devices: 650-1500V SiC Power Modules
• Automotive-Grade SiC Power Devices: Technological Trends, 2025-2030E
• Global SiC Power Device Market Size, 2020-2030E
• Core Application Scenarios of SiC Power Devices in Chinese Passenger Cars
• China's Automotive-Grade Passenger Car SiC Chip Market Size, 2022-2030E
• 1.4 Third-Generation Semiconductors: Automotive-Grade GaN Power Device Industry and Market
• Automotive-Grade GaN Power Devices: 800-1000V High-Voltage Architecture Application
• Automotive-Grade GaN Power Devices: GaN Supply Chain - Differences Between SiC and GaN Process Technologies
• Automotive-Grade GaN Power Devices: GaN Supply Chain - GaN Epitaxial Substrate Materials
• Automotive-Grade GaN Power Devices: GaN Supply Chain - New Diamond-Based GaN Epitaxial Substrate Materials (1)
• Automotive-Grade GaN Power Devices: GaN Supply Chain - New Diamond-Based GaN Epitaxial Substrate Materials (2)
• Automotive-Grade GaN Power Devices: GaN Supply Chain - New Diamond-Based GaN Epitaxial Substrate Materials (3)
• Automotive-Grade GaN Power Devices: GaN Supply Chain - Mainstream GaN Packaging Technologies - Discrete Devices (1)
• Automotive-Grade GaN Power Devices: GaN Supply Chain - Mainstream GaN Packaging Technologies - Discrete Devices (2)
• Automotive-Grade GaN Power Devices: GaN Supply Chain - Mainstream GaN Packaging Technologies - Composite Devices (1)
• Automotive-Grade GaN Power Devices: GaN Supply Chain - Mainstream GaN Packaging Technologies - Composite Devices (2)
• Automotive-Grade GaN Power Devices: GaN Supply Chain - Comparison of Mainstream GaN Packaging Technologies
• Automotive-Grade GaN Power Devices: GaN Supply Chain - Advanced GaN Packaging Technologies (1): Electrical Performance Optimization
• Automotive-Grade GaN Power Devices: GaN Supply Chain - Advanced GaN Packaging Technologies (2): Innovative Thermal Management Structures
• Automotive-Grade GaN Power Devices: GaN Supply Chain - Advanced GaN Packaging Technologies (3): Integrated Packaging
• Automotive-Grade GaN Power Devices: GaN Supply Chain - Advanced GaN Packaging Technologies (2): Stress Optimization Design
• Automotive-Grade GaN Power Devices: GaN Supply Chain - Device Cost Comparison
• Automotive-Grade GaN Power Devices: Major Suppliers and Technical Routes (1)
• Automotive-Grade GaN Power Devices: Major Suppliers and Technical Routes (2)
• Automotive-Grade GaN Power Devices: Major Suppliers and Technical Routes (3)
• Automotive-Grade GaN Power Devices: Major Suppliers and Technical Routes (4)
• Automotive-Grade GaN Power Devices:Product Cases (1)
• Automotive-Grade GaN Power Devices:Product Cases (2)
• Automotive-Grade GaN Power Device Price (1)
• Automotive-Grade GaN Power Device Price (2)
• Global GaN Power Device Market Size, 2020-2030E
• Core Application Scenarios of GaN Power Devices in Chinese Passenger Cars
• China's Passenger Car GaN Power Device Market Size, 2025-2030E
• 1.5 Automotive-Grade Power Semiconductor Certification Standards
• Automotive-Grade Power Semiconductor Standards
• Automotive-Grade Power Semiconductor Standards: AEC-Q
• Automotive-Grade Power Semiconductor Standards: AEC-Q101 (Discrete Devices)
• Automotive-Grade Power Semiconductor Standards: AQG 324 (Power Modules) (1)
• Automotive-Grade Power Semiconductor Standards: AQG 324 (Power Modules) (2)
• Automotive-Grade Power Semiconductor Standards: AQG 324 (Power Modules) (3)
• Automotive-Grade Power Semiconductor Standards: IATF 16949 (Quality Management System Certification System)
• Automotive-Grade Power Semiconductor Standards: ISO 26262 (Functional Safety) (1)
• Automotive-Grade Power Semiconductor Standards: ISO 26262 (Functional Safety) (2)

Chapter 2 Automotive-Grade Power Semiconductor Application Scenarios and Market

• 2.1 Application Scenarios: Main Drive Inverters
• Main Drive Inverters
• Main Drive Inverters: SiC Power Modules Are Applied to 800V and Higher-Voltage Platforms (1)
• Main Drive Inverters: SiC Power Modules Are Applied to 800V and Higher-Voltage Platforms (2)
• Main Drive Inverters: Technological and Cost Differences
• 800V Motor Controllers - Products and Technologies of Core Suppliers
• Development Trends of Main Drive Inverters: GaN Devices (1)
• Development Trends of Main Drive Inverters: GaN Devices (2)
• Technological Innovations in Main Drive Inverters: Hyundai's 2-Stage Motor System Design (1)
• Technological Innovations in Main Drive Inverters: Hyundai's 2-Stage Motor System Design (2)
• Passenger Cars with 800-1000V High-Voltage Architectures on Sale in China as of Q2 2025 (1)
• Passenger Cars with 800-1000V High-Voltage Architectures on Sale in China as of Q2 2025 (2)
• Passenger Cars with 800-1000V High-Voltage Architectures on Sale in China as of Q2 2025 (3)
• Competitive Landscape of Passenger Cars with 800-1000V High-Voltage Architectures on Sale in China
• Sales Volume and Penetration Rate of Passenger Cars with 800-1000V High-Voltage Architectures in China, 2022-2030E
• Baseline Assumptions for Forecast of Main Drive SiC Chip Market Size for Passenger Cars with 800-1000V High-Voltage Architectures in China
• Table: Main Drive SiC Chip Market Size for Passenger Cars with 800-1000V High-Voltage Architectures in China, 2022-2030E
• 2.2 Application Scenarios: OBCs
• OBCs
• OBCs: Power Evolution
• OBCs: Power architecture
• OBCs: 400V Voltage Platforms (1)
• OBCs: 400V Voltage Platforms (2)
• OBCs: 800V Voltage Platforms (1)
• OBC Development Trends (1): Bidirectional OBCs
• OBC Development Trends (2): GaN (1)
• OBC Development Trends (2): GaN (2)
• OBC Development Trends (2): GaN (3) - GaN OBCs
• OBC Development Trends (2): GaN (4) - Bidirectional GaN Power Devices
• OBC Development Trends (2): GaN (5) - Bidirectional GaN Power Devices
• Baseline Assumptions for Forecast of China's New Energy Passenger Car OBC SiC Chip Market Size
• Table: China's New Energy Passenger Car OBC SiC Chip Market Size, 2020-2030E
• 2.3 Application Scenarios: High-Voltage DC Converters
• High-Voltage DC Converters
• High-Voltage DC Converters: onsemi's SiC Product Application Design
• High-Voltage DC Converters: STMicroelectronics' SiC Product Application Design
• High-Voltage DC Converter Development Trends: GaN Devices
• China's New Energy Passenger Car High-Voltage DC/DC SiC/GaN Market Size, 2022-2030E
• Tabl: China's New Energy Passenger Car High-Voltage DC/DC SiC/GaN Market Size, 2022-2030E
• 2.4 Application Scenarios: Electric Compressors
• Electric Compressors (1)
• Electric Compressors (2)
• Electric Compressor Solutions (1)
• Electric Compressor Solutions (2)
• China's New Energy Passenger Car Electric Compressor SiC Market Size, 2022-2030E
• Table: China's New Energy Passenger Car Electric Compressor SiC Market Size, 2022-2030E
• 2.5 Application Scenarios: DC Chargers
• Comparison of Different Voltage System Topologies and MOSFETs for DC Chargers
• DC Charger Development Trends: Evolution of Modules and Power Devices
• DC Charger Development Trends: Accelerated Construction of Megawatt-Level Fast Charging Networks
• DC Charger Development Trends: National Energy Administration's Three-Year Charging Pile Growth Action Plan
• DC Charger Development Trends: GB 46519-2025 "Minimum Allowable Values of Energy Efficiency and Energy Efficiency Grades for Electric Vehicle Power Supply Equipment"
• DC Charger Development Trends: Vendors Accelerate Procurement Bidding for SiC Devices
• DC Charger Development Trends: Some Application Cases of SiC in DC Chargers
• Baseline Assumptions for Forecast of China's SiC DC Charger Market Size
• Table: China's SiC DC Charger Market Size, 2022-2030E
• 2.6 Automotive-Grade Passenger Car SiC/GaN Chip Market Size in China
• China's Automotive-Grade Passenger Car SiC Chip Market Size, 2022-2030E
• China's Automotive-Grade Passenger Car GaN Chip Market Size, 2022-2030E

Chapter 3 Development Trends and Supply Chain Capacity Distribution of Automotive-Grade Power Devices

• 3.1 Development Trends (1): Embedded Packaging Technology
• Embedded Packaging Technology (1)
• Embedded Packaging Technology (2)
• Embedded Packaging Technology (3)
• Embedded SiC Packaging Solutions: GAC Quark Electric Drive 2.0
• Embedded SiC Packaging Solutions: Shanghai Chengzhi's SiC Embedded Power Module
• Embedded SiC Packaging Solutions: Xinhuarui Semiconductor's Embedded SiC Packaging
• Embedded SiC Packaging Solutions: ZF's CIPB
• Embedded SiC Packaging Solutions: Infineon's Embedded Packaging
• Embedded SiC Packaging Solutions: UAES' Embedded Inverter Brick
• Embedded GaN Packaging Solutions: Horse Powertrain's Independent Power GaN Embedded Packaging Module Design (1)
• Embedded GaN Packaging Solutions: Horse Powertrain's Independent Power GaN Embedded Packaging Module Design (2)
• Embedded GaN Packaging Solutions: Horse Powertrain's Independent Power GaN Embedded Packaging Module Design (7)
• 3.2 Development Trends (2): Three-Voltage-Level SiC Modules
• Three-Voltage-Level Inverter Technology (1)
• Three-Voltage-Level Inverter Technology (6)
• Three-Voltage-Level SiC Module Solutions: Three-Voltage-Level 1200V SiC Modules
• Three-Voltage-Level SiC Module Solutions: Three-Voltage-Level Inverter Technology of OEMs
• Three-Voltage-Level SiC Module Solutions: UAES' T-type Three-Voltage-Level Motor Controllers
• 3.3 Development Trends (3): Si/SiC Hybrid Power Modules
• Si/SiC Hybrid Power Modules (1)
• Si/SiC Hybrid Power Modules (5)
• Si/SiC Hybrid Power Module Solutions
• Si/SiC Hybrid Power Module Solutions: XPeng's Hybrid SiC Coaxial Electric Drive Technology
• Si/SiC Hybrid Power Module Solutions: Geely's SiC Hybrid Drive Integration Technology
• Si/SiC Hybrid Power Module Solutions: InfiMotion's All-in-One Electric Drive
• Si/SiC Hybrid Power Module Solutions: ZF's CIPB
• Si/SiC Hybrid Power Module Solutions: Inovance's PD4H Hybrid Carbon Electronic Control
• 3.4 Production Capacity Layout of Domestic and Foreign Automotive-Grade Power Semiconductor Vendors
• Production Capacity Layout of Domestic and Foreign Automotive-Grade Power Semiconductor Vendors (1)
• Production Capacity Layout of Domestic and Foreign Automotive-Grade Power Semiconductor Vendors (2)
• Production Capacity Layout of Domestic and Foreign Automotive-Grade Power Semiconductor Vendors (8)
• Production Capacity Layout of Domestic and Foreign Automotive-Grade Power Semiconductor Vendors (9)
• 3.5 Production Capacity Layout of Domestic and Foreign Third-Generation Power Semiconductor Material Vendors
• Production Capacity Layout of Domestic and Foreign Third-Generation Power Semiconductor Material Vendors (1)
• Production Capacity Layout of Domestic and Foreign Third-Generation Power Semiconductor Material Vendors (5)
• 3.6 Revenue of Domestic and Foreign Third-Generation Semiconductor Power Device Vendors
• Revenue, Gross Profit and Business of Domestic and Foreign Third-Generation Semiconductor Power Device Vendors (1)
• Revenue, Gross Profit and Business of Domestic and Foreign Third-Generation Semiconductor Power Device Vendors (2)
• Revenue, Gross Profit and Business of Domestic and Foreign Third-Generation Semiconductor Power Device Vendors (3)
• Revenue, Gross Profit and Business of Domestic and Foreign Third-Generation Semiconductor Power Device Vendors (4)

Chapter 4 Power Semiconductor and Module Layout Strategies of OEMs

• 4.1 Layout Strategies
• Investing in/Joint Venture/Self-built Power Semiconductor Companies (1)
• Investing in/Joint Venture/Self-built Power Semiconductor Companies (2)
• 4.2 BYD
• Power Semiconductor Layout
• Power Semiconductor Layout: Capacity Distribution
• Evolution of Power Semiconductor Application (1)
• Evolution of Power Semiconductor Application (2)
• Sales Proportion of 800V Vehicle Models (1)
• Sales Proportion of 800V Vehicle Models (2)
• 1500V SiC: Next-Generation High-Voltage SiC Power Chips (1)
• 1500V SiC: Next-Generation High-Voltage SiC Power Chips (2)
• 1500V SiC: Next-Generation High-Voltage SiC Power Chips (3)
• 1500V SiC Application: Super e-Platform
• 1500V SiC Application: 12-in-1 Electric Drive Assembly (1)
• 1500V SiC Application: 12-in-1 Electric Drive Assembly (2)
• 1200V SiC Application: 8-in-1 Electric Drive Assembly (1)
• 1200V SiC Application: 8-in-1 Electric Drive Assembly (2)
• 1200V SiC Application: 8-in-1 Electric Drive Assembly (3)
• GaN Application: Lingyuan Intelligent UAV System Uses GaN
• 4.3 Li Auto
• Power Semiconductor Layout
• Power Semiconductor Layout: SiC Electric Drive Technology System and Capacity Distribution
• Evolution of Power Semiconductor Application
• Sales Proportion of 800V Vehicle Models
• 800V SiC: Self-developed High-voltage SiC Power Modules (1)
• 800V SiC: Self-developed High-voltage SiC Power Modules (2)
• 800V SiC Application: Huixiang 5-in-1 Electric Drive Assembly
• 4.4 XPeng
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application
• Sales Proportion of 800V Vehicle Models
• 800V SiC: Hybrid Carbon Modules
• 800V SiC Application: Next-Generation Hybrid Carbon Coaxial Electric Drive (1)
• 800V SiC Application: Next-Generation Hybrid Carbon Coaxial Electric Drive (2)
• 800V SiC Application: Next-Generation Hybrid Carbon Coaxial Electric Drive (3)
• 800V SiC: Plastic-Encapsulated SiC Modules (1)
• 800V SiC: Plastic-Encapsulated SiC Modules (2)
• 800V SiC Application: Electric Drive Based on SEPA 2.0
• 800V SiC Application: 800V Electric Drive Systems (1)
• 800V SiC Application: 800V Electric Drive Systems (2)
• 4.5 NIO
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application
• Sales Proportion of 800V Vehicle Models
• 1200V SiC Application: The Latest Electric Drive System
• 1200V SiC Application: 900V High-Performance Electric Drive Systems (1)
• 1200V SiC Application: 900V High-Performance Electric Drive Systems (2)
• 1200V SiC Application: 900V High-Performance Electric Drive Systems (3)
• 800V SiC Application: Second-Generation Electric Drive Systems (1)
• 800V SiC Application: Second-Generation Electric Drive Systems (2)
• 800V SiC Application: Second-Generation Electric Drive Systems (3)
• 4.6 Leapmotor
• Power Semiconductor Layout
• Power Semiconductor Layout: Capacity Distribution
• Evolution of Power Semiconductor Application
• Sales Proportion of 800V Vehicle Models
• 800V SiC Application: 4-in-1 Range Extender Drive Systems
• 800V SiC Application: Electric Drive Systems (1)
• 800V SiC Application: Electric Drive Systems (2)
• 4.7 Xiaomi Auto
• Power Semiconductor Layout
• Power Semiconductor Layout: Supply Chain (1)
• Power Semiconductor Layout: Supply Chain (2)
• Evolution of Power Semiconductor Application
• Sales Proportion of 800V Vehicle Models
• 800V SiC Application: V6s Plus Super Motors
• 800V SiC Application: 800V SiC Electric Drive Systems
• 400V/800V SiC Application: V6/V6s Motors
• 4.8 Geely
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application (1)
• Evolution of Power Semiconductor Application (2)
• Evolution of Power Semiconductor Application (3)
• Sales Proportion of 800V Vehicle Models (1)
• Sales Proportion of 800V Vehicle Models (2)
• 800V SiC: Hybrid Carbon Modules
• 800V SiC Application: E-DHT 11-in-1 Hybrid Systems
• 800V SiC Application: 800V High-Voltage Platforms
• GaN Application: Gemini Range Extenders
• GaN Application: GaN Range Extended Power Generation Systems
• 4.9 SAIC IM
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application
• Sales Proportion of 800V Vehicle Models
• 800V SiC Application: Quasi-900V Dual SiC Platforms
• 800V SiC Application: Next-Generation Hurricane Motor
• 800V SiC Application: Hurricane Motor
• 4.10 GAC Group
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application
• Sales Proportion of 800V Vehicle Models
• 800V SiC Application: Quark Electric Drive 2.0 (1)
• 800V SiC Application: Quark Electric Drive 2.0 (2)
• 800V SiC Application: Quark Electric Drive 1.0 (1)
• 800V SiC Application: Quark Electric Drive 1.0 (2)
• 800V SiC Application: Quark Electric Drive 1.0 (3)
• GaN Deployment: GaN Power Chip Projects
• 4.11 FAW Hongqi
• Automotive Power Semiconductor Layout (1)
• Automotive Power Semiconductor Layout (2)
• Evolution of Power Semiconductor Application
• 800V SiC Application: Tiangong Battery-Electric Platform
• 1700V SiC: 1700V Ultra-High-Voltage SiC Power Devices
• 800V SiC: 750V SiC Power Chips
• 800V SiC Application: M220-220 Electric Drive Systems
• 4.12 Chery
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application (1)
• Evolution of Power Semiconductor Application (2)
• Sales Proportion of 800V Vehicle Models
• 800V SiC Application: Underwater Thruster
• 800V SiC Application: Kunpeng Hybrid System (1)
• 800V SiC Application: Kunpeng Hybrid System (2)
• 1200V SiC Application: Fourth-Generation Hybrid Transmission
• 800V SiC Application: 800V Electric Drive Platforms
• 4.13 Great Wall Motor
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application (1)
• Evolution of Power Semiconductor Application (2)
• Sales Proportion of 800V Vehicle Models
• 1200V SiC Application: Hi4 Electric Hybrid System (1)
• 1200V SiC Application: Hi4 Electric Hybrid System (2)
• 1200V SiC Application: Hi4 Electric Hybrid System (3) - Hi4-Z Drive Platform
• 800V SiC Application: X-in-1 Electric Drive System
• 4.14 Changan Automobile
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application
• 800V SiC Application: Super Range Extender 2.0
• 800V SiC Application: 7-in-1 Electric Drive Assembly
• GaN Application: GaN OBCs
• 4.15 Dongfeng Motor
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application
• Evolution of Power Semiconductor Application: Electric Drive
• High-Voltage SiC Application: Mach Power (1)
• High-Voltage SiC Application: Mach Power (2) - iD4
• High-Voltage SiC Application: Mach Power (3) - iD5
• High-Voltage SiC Application: Mach Power (4) - Off-Road Powertrain
• 1700V SiC: 1700V SiC MOSFETs
• 800V SiC: SiC Modules
• 800V SiC Application: 10-in-1 Ultra-High-Speed Electric Drive Systems
• 800V SiC Application: Lanhai Intelligent Hybrid Technology
• 4.16 Harmony Intelligent Mobility Alliance (HIMA)
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application
• Sales Proportion of 800V Vehicle Models
• 800V SiC Application: Huawei Drive ONE Golden Range Extender Power Platform
• 800V SiC Application: Second-Generation Huawei DriveONE 800V High-Voltage Power Platform
• 800V SiC Application: Huawei DriveONE Hyperconverged Gold Power Platform
• 800V SiC Application: First-Generation Huawei DriveONE 800V High-Voltage Power Platform
• 4.17 BAIC
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application
• Sales Proportion of 800V Models (including ARCFOX)
• Evolution of Power Semiconductor Application: Powertrain Products
• Evolution of Power Semiconductor Application: Powertrain Planning (1)
• Evolution of Power Semiconductor Application: Powertrain Planning (2)
• 800V SiC Application: a-power
• 4.18 Tesla
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application
• SiC Application: Energy Storage Systems
• SiC Application: Inverters
• 4.19 Volkswagen
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application
• SiC Application: Automotive Energy Storage Systems
• SiC Application: 800V High-Voltage Platforms
• 4.20 BMW
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application
• SiC Application: Sixth-Generation BMW eDrive Technology
• SiC Application: Sixth-Generation BMW eDrive Technology - Electric Drive Systems (1)
• SiC Application: Sixth-Generation BMW eDrive Technology - Electric Drive Systems (2)
• SiC Application: Sixth-Generation BMW eDrive Technology - Electric Drive Systems (3)
• SiC Application: BMW eDrive Systems Equipped with SiC Inverters
• 4.21 Daimler
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application
• Power Semiconductor Layout: Vehicle Model Configuration Strategy
• SiC Application: Inverters
• SiC Application: Magna eDS System
• 4.22 Honda Motor
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application
• SiC: SiC Modules
• 4.23 Toyota Motor
• Power Semiconductor Layout
• Evolution of Power Semiconductor Application
• Core Power Semiconductor Technology: SiC
• Core Power Semiconductor Technology: GaN
• SiC Application: Traction Inverters
• SiC Application: Sixth-Generation Hybrid System
• GaN Application: GaN Inverter

Chapter 5 Foreign Automotive-Grade Power Semiconductor Vendors

• 5.1 Infineon
• Power Semiconductor Layout
• Power Semiconductor Layout: "In China, For China" Strategy
• Power Semiconductor Wafer Foundry Process and Product Application
• Power Semiconductor Wafer Foundry Process: Wafer Technology
• Power Semiconductor Capacity Distribution
• Power Semiconductor Product Line and Technology Evolution
• Core SiC Technology: Trench-based SiC MOSFETs (1)
• Core SiC Technology: Trench-based SiC MOSFETs (2)
• Core SiC Technology: Next-Generation Trench-based SiC Superjunction (TSJ) Technology
• Core GaN Technology: CoolGaN(TM) Technology
• SiC MOSFET Packaging Technology
• SiC MOSFET Packaging Technology: Embedded Packaging Technology (1)
• SiC MOSFET Packaging Technology: Embedded Packaging Technology (2)
• SiC Products: CoolSiC(TM) MOSFETs
• SiC Products: CoolSiC(TM) MOSFET Discretes
• SiC Products: CoolSiC(TM) MOSFET Modules
• SiC Products: Si/SiC Hybrid Modules
• G2 SiC MOSFETs: 650V CoolSiC MOSFETs
• G2 SiC MOSFETs: 1400V CoolSiC MOSFETs (1)
• G2 SiC MOSFETs: 1400V CoolSiC MOSFETs (2)
• G2 Si/SiC Hybrid Modules: HybridPACK Drive G2 CoolSiC Modules
• GaN Products: CoolGaN
• G1 CoolGaN: CoolGaN(TM) Automotive Transistor 100 V G1 Family
• Power Semiconductor Cooperation: SiC Packaging Technology in Cooperation with ROHM (1)
• Power Semiconductor Cooperation: SiC Packaging Technology in Cooperation with ROHM (2)
• 5.2 onsemi
• Power Semiconductor Layout
• Power Semiconductor Capacity Distribution
• Power Semiconductor Technology Development Roadmap
• Power Semiconductor Product Line and Technology Evolution
• Core SiC Technology: Planar SiC MOSFETs (1)
• Core SiC Technology: Planar SiC MOSFETs (2)
• Core SiC Technology: Next-Generation Trench-based SiC MOSFETs
• GaN Core Technology: vGaN (1)
• GaN Core Technology: vGaN (2)
• SiC Products: EliteSiC MOSFET Diodes
• SiC Products: EliteSiC MOSFETs
• SiC Products: EliteSiC MOSFETs, SiC Module/Hybrid Modules
• M3 SiC MOSFET: EliteSiC MOSFET Bare Die
• M3 SiC MOSFET: M3S 650V SiC MOSFET Device
• SiC Product Application: Main Drive Inverters
• 5.3 STMicroelectronics
• Development History
• Development Process: Localization Strategy in China
• Power Semiconductor Wafer Foundry Process and Product Application
• Power Semiconductor Capacity Distribution
• Power Semiconductor Product Line and Technology Evolution
• SiC Products: STPOWER
• SiC Products: STPOWER SiC MOSFETs
• SiC Products: STPOWER SiC Diodes
• GaN Products: STPOWER
• 5.4 Mitsubishi Electric
• Power Semiconductor Layout
• Power Semiconductor Capacity Distribution
• Power Semiconductor Product Line and Technology Evolution
• Core SiC Technology: Trench-based SiC MOSFETs
• Automotive-Grade SiC Products: J3-Series SiC-MOSFET Modules (1)
• Automotive-Grade SiC Products: J3-Series SiC-MOSFET Modules (2)
• Automotive-Grade SiC Products: J3-Series SiC-MOSFET Modules (3)
• Automotive-Grade SiC Products: J3-Series SiC-MOSFET Modules (4)
• Automotive-Grade SiC Products: SiC-MOSFET Bare Dies
• Automotive-Grade SiC Application: Main Drive Inverters/Range Extenders
• 5.5 Fuji Electric
• Power Semiconductor Layout
• Power Semiconductor Capacity Distribution
• Power Semiconductor Product Line and Technology Evolution
• Core SiC Technology: All-SiC Trench-based MOSFETs
• SiC Products: SiC Schottky Barrier Diodes
• SiC Products: SiC Hybrid Modules (1)
• SiC Products: SiC Hybrid Modules (2)
• G2 SiC Modules: 1200V All-SiC Modules
• SiC Product Application: Bidirectional OBCs
• 5.6 Vishay Intertechnology
• Power Semiconductor Layout and Capacity Distribution
• Power Semiconductor Product Line and Technology Evolution
• Automotive-Grade SiC Modules
• Automotive-Grade SiC Modules: EF Series Power MOSFETs
• Automotive-Grade SiC Modules: 1200V SiC Single-Phase Full-Bridge Modules
• GaN Products: D3GaN
• G2 GaN Product Application: 400V Main Drive Inverters
• 5.7 Toshiba
• Power Semiconductor Layout
• Power Semiconductor Capacity Distribution
• Power Semiconductor Product Line and Technology Evolution
• Core SiC Technology: Innovation in SiC Device Structure (1)
• Core SiC Technology: Innovation in SiC Device Structure (2)
• SiC Products: SiC Modules/Chips
• G3 SiC Products: SiC MOSFETs (1)
• G3 SiC Products: SiC MOSFETs (2)
• 5.8 Denso
• Power Semiconductor Layout (1)
• Power Semiconductor Layout (2)
• Power Semiconductor Capacity Distribution
• Core SiC Technology: U-shaped Trench-based SiC MOSFETs
• Core SiC Technology: SiC Epitaxial Growth Technology
• Power Semiconductor Product Line and Technology Evolution

Chapter 6: Domestic Automotive-Grade Power Semiconductor Vendors

• 6.1 Silan Microelectronics
• Power Semiconductor Layout
• Production Lines of Subsidiaries
• Power Semiconductor Wafer Foundry Process and Product Application
• Power Semiconductor Capacity Distribution
• Power Semiconductor Product Line and Technology Evolution
• SiC Product Technology Development Roadmap
• G2 SiC MOSFET: 1200V SiC MOS
• G2 SiC MOSFET: 750V SiC MOS
• Automotive-Grade SiC Products: B3G SiC Modules
• SiC Products: Discretes Suitable for OBCs
• SiC Product Application: OBCs
• SiC Product Application: Level 1 DC-DC Power Supply Solution
• 6.2 CRRC Times Electric
• Power Semiconductor Layout
• Power Semiconductor Capacity Distribution
• Power Semiconductor Product Line and Technology Evolution
• G3 SiC Products: TO SiC Devices
• G3 SiC Products: All-SiC Power Modules
• 6.3 StarPower
• Power Semiconductor Layout
• Power Semiconductor Capacity Distribution
• Power Semiconductor Product Line and Technology Evolution
• G2 SiC Products: 1200V SiC MOSFET
• G2 SiC Products: SiC Modules
• 6.4 United Nova Technology
• Power Semiconductor Layout
• Revenue in H1 2025
• Power Semiconductor Wafer Foundry Process and Product Application
• Power Semiconductor Wafer Foundry Process Technology Platform
• Power Semiconductor Capacity Distribution
• Power Semiconductor Product Line and Technology Evolution
• SiC MOS Chip Technology Layout
• G1.7 SiC Products: 1500V SiC MOS Encapsulated Modules
• 6.5 Accopower
• Power Semiconductor Layout
• Power Semiconductor Capacity Distribution
• Core Power Semiconductor Technology
• Power Semiconductor Product Line and Technology Evolution
• Automotive-Grade SiC Products: APD Series SiC Modules (1)
• Automotive-Grade SiC Products: APD Series SiC Modules (2)
• Automotive-Grade SiC Products: Next-Generation APD Series SiC Modules
• 6.6 China Resources Microelectronics
• Power Semiconductor Layout
• Power Semiconductor Wafer Foundry Process and Product Application
• Manufacturing and Services: Wafer Foundry Core Technology
• Manufacturing and Services: Wafer Foundry IP Alliance, EDA
• Power Semiconductor Capacity Distribution
• Power Semiconductor Product Line and Technology Evolution
• GaN Products
• Automotive-Grade SiC Products
• Automotive-Grade SiC Products: SiC MOSFETs
• G2 SiC Products: Main Drive SiC Modules
• G4 SiC Products: Main Drive SiC Modules
• 6.7 Wingtech Technology
• Power Semiconductor Layout and Capacity Distribution
• Power Semiconductor Product Line and Technology Evolution
• GaN Products
• Automotive-Grade GaN Product Application: Gemini Range Extenders
• Automotive-Grade SiC Products: 1200V SiC MOSFETs
• 6.8 Basic Semiconductor
• Power Semiconductor Layout
• Power Semiconductor Capacity Distribution
• Automotive-Grade SiC Products: PcoreTM 6-Series Modules (1)
• Automotive-Grade SiC Products: PcoreTM 6-Series Modules (2)
• Automotive-Grade SiC Products: PcoreTM 2-Series Modules
• Automotive-Grade SiC Products: PcoreTM 1-Series Modules
• 6.9 NCE Power
• Power Semiconductor Layout
• Power Semiconductor Product Line and Technology Evolution
• SiC Products: Super Trench Platform Series
• G3 SiC Products (1)
• G3 SiC Products (2)
• G2 SiC Products
• Automotive-Grade SiC Products: NCE Automotive Electronics Series
• Automotive-Grade SiC Product Application: 48V Automotive Systems
• 6.10 Founder Microelectronics
• Power Semiconductor Layout
• Power Semiconductor Capacity Distribution
• Power Semiconductor Product Line and Technology Evolution
• Automotive-Grade SiC Products
• Automotive-Grade SiC Product Application: Main Drive Controllers
• Automotive-Grade SiC Product Application: OBCs
• Automotive-Grade SiC Product Application: DC Chargers
• Automotive-Grade SiC Product Application: DC-DC Converters
• Automotive-Grade SiC Product Application: Air Suspension
• Automotive-Grade SiC Product Application: Motor and Compressor Drive
• Automotive-Grade SiC Product Application: PTC Heaters

Chapter 7 Domestic and Foreign Third-Generation Power Semiconductor Material Vendors

• 7.1 Wolfspeed (formerly Cree)
• Business and Development History
• Revenue in Q2 FY2025
• Capacity Layout
• Core SiC Technology Evolution: Planar Gate VS. Trench-based Gate SiC MOSFET
• Automotive-Grade SiC Products
• SiC Products: Used in EV Powertrain
• SiC Products: Used in EV Powertrain - Discrete SiC MOSFETs (1)
• SiC Products: Used in EV Powertrain - Discrete SiC MOSFETs (2)
• SiC Products: Used in EV Powertrain - Discrete SiC MOSFETs (3)
• SiC Product Application: XM Series Three-Phase Inverters
• SiC Products: Used in OBCs
• SiC Products: Used in OBCs - E Series (1)
• SiC Products: Used in OBCs - E Series (2)
• SiC Products: Used in OBCs - E Series (3)
• SiC Products: Used in OBCs - E Series Solutions
• SiC Products: Used in Onboard DC/DC Converters
• New E Series Automotive-Grade SiC MOSFETs: E3M0900170D
• New E Series Automotive-Grade SiC MOSFETs: E3M0900170J
• 7.2 Coherent
• Business and Capacity Layout
• Revenue in FY2024-Q1 FY2025
• Core Technology: SHARP(TM) Technology for Recycling LiB Waste
• Application of SiC Products in the Automotive Industry
• Automotive-Grade SiC Products
• SiC Substrate Materials: Conductive and Semi-Insulating Substrates
• SiC Substrate Materials: SiC Epitaxial Wafers
• 7.3 Navitas Semiconductor
• Business
• Revenue in 2024
• Capacity Layout
• Core Technology: GaN and SiC Technology
• Core Technology: GaNFast(TM) Technology
• Evolution of GaN Solutions
• Applications of GaN Products in the Automotive Industry
• Automotive-Grade GaN/SiC Products
• Automotive-Grade SiC Products: TOLL Packaged Third-Generation Fast SiC MOSFETs (1)
• Automotive-Grade SiC Pro