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市場調查報告書
商品編碼
1876568
碳化矽(SiC)無線電動汽車充電市場機會、成長促進因素、產業趨勢分析及預測(2025-2034年)Silicon Carbide (SiC) for Wireless EV Charging Market Opportunity, Growth Drivers, Industry Trend Analysis, and Forecast 2025 - 2034 |
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2024 年全球用於電動車無線充電的碳化矽 (SiC) 市場價值為 420 萬美元,預計到 2034 年將以 15.1% 的複合年成長率成長至 1700 萬美元。

全球電動車普及率的激增推動了無線電動汽車充電系統對碳化矽(SiC)的需求,因為消費者和商業車隊越來越傾向於更快、更有效率、更便利的充電解決方案。與傳統的矽元件相比,SiC 裝置具有更高的功率轉換效率和更低的能量損耗,使其非常適合高頻無線充電應用。 SiC 能夠在更高的電壓和溫度下工作,這使得充電器設計更加緊湊輕便,也使其成為下一代電動車充電基礎設施的關鍵推動因素。 SiC 半導體材料和製造流程的進步,例如更高的晶圓品質、更高的生產良率和更最佳化的裝置結構,都提高了效率、熱穩定性和可靠性。 SiC MOSFET 和二極體的創新進一步降低了能量損耗,並支援更小巧、整合度更高、功率密度和開關頻率更高的充電解決方案。
| 市場範圍 | |
|---|---|
| 起始年份 | 2024 |
| 預測年份 | 2025-2034 |
| 起始值 | 420萬美元 |
| 預測值 | 1700萬美元 |
| 複合年成長率 | 15.1% |
預計到2024年,SiC功率MOSFET元件將佔據39.4%的市場佔有率,這主要得益於其卓越的效率、更低的開關損耗和更高的功率密度。這些特性使得無線電動汽車充電器能夠實現更快、更緊湊、散熱效率更高的應用。製造商正致力於提升裝置的可靠性、閘極氧化層穩定性以及封裝性能,以滿足高頻運作的需求。
由於其適用於中高功率無線電動汽車充電,651V至1200V電壓等級的逆變器市場預計在2024年將創造170萬美元的銷售額。這些組件具有卓越的效率和散熱性能,生產商正致力於提升裝置的穩健性、柵極可靠性和車規級封裝整合,同時與電動汽車OEM廠商合作進行逆變器設計和熱建模,以增強產品市場定位。
2024年,北美無線電動汽車充電用碳化矽(SiC)市場佔有率預計將達到34.5%,這主要得益於電動車普及率的提高、政府扶持政策的訂定以及對先進充電基礎設施的投資。環保意識的增強和清潔能源激勵措施的訂定,也推動了對高效SiC技術的需求成長。製造商有機會在城市和郊區擴展無線電動汽車充電網路,透過與公用事業公司建立戰略合作夥伴關係以及投資可擴展的SiC基礎設施,可以更好地滿足日益成長的住宅、商業和公共交通充電需求。
全球電動車無線充電式碳化矽 (SiC) 市場的主要參與者包括英飛凌科技、三菱電機、微芯科技、意法半導體、GeneSiC Semiconductor(Qorvo)、安森美半導體、UnitedSiC(Qorvo)、富士電機、東芝、羅姆半導體、WixelDA. Ltd.、Plugless Power Inc.(Evatran)、高通技術公司(Halo)、InductEV Inc.、ABB Ltd.、羅伯特博世有限公司、豐田汽車公司、西門子公司和大陸集團。這些企業正透過持續的產品創新等策略來鞏固其在電動車無線充電碳化矽 (SiC) 市場的領先地位,專注於高效、耐熱的 SiC MOSFET 和二極體。許多企業正在與電動車原始設備製造商 (OEM) 和公用事業供應商建立策略合作夥伴關係,以將 SiC 解決方案整合到無線充電網路中。對可擴展製造製程、晶圓品質改進和封裝最佳化的投資提高了可靠性並降低了能量損耗。各公司也致力於擴大區域影響力、參與合作研究並展示高性能應用,以獲得競爭優勢。行銷活動著重強調碳化矽解決方案的能源效率和緊湊設計優勢,以吸引住宅和商業客戶,從而鞏固其在蓬勃發展的電動車生態系統中的地位。
The Global Silicon Carbide (SiC) for Wireless EV Charging Market was valued at USD 4.2 million in 2024 and is estimated to grow at a CAGR of 15.1% to reach USD 17 million by 2034.

The surge in electric vehicle adoption worldwide is driving demand for SiC in wireless EV charging systems, as consumers and commercial fleets increasingly prefer faster, more efficient, and convenient charging solutions. SiC components provide higher power conversion efficiency and lower energy losses than conventional silicon devices, making them highly suitable for high-frequency wireless charging applications. Their ability to function at elevated voltages and temperatures also allows for compact and lightweight charger designs, positioning SiC as a critical enabler of next-generation EV charging infrastructure. Advancements in SiC semiconductor materials and manufacturing such as higher wafer quality, improved production yield, and refined device architecture have enhanced efficiency, thermal stability, and reliability. Innovations in SiC MOSFETs and diodes further reduce energy losses and support smaller, integrated charging solutions with higher power density and switching frequency.
| Market Scope | |
|---|---|
| Start Year | 2024 |
| Forecast Year | 2025-2034 |
| Start Value | $4.2 Million |
| Forecast Value | $17 Million |
| CAGR | 15.1% |
The SiC power MOSFETs segment held a 39.4% share in 2024, driven by their superior efficiency, lower switching losses, and higher power density. These features enable faster, more compact, and thermally efficient wireless EV chargers. Manufacturers are focusing on improving device reliability, gate oxide stability, and packaging to meet high-frequency operational demands.
The 651V to 1200V class segment generated USD 1.7 million in 2024, owing to its suitability for mid- to high-power wireless EV charging. These components offer exceptional efficiency and thermal performance, and producers are investing in device robustness, gate reliability, and automotive-grade packaging integration, while collaborating with EV OEMs on inverter design and thermal modeling to enhance product positioning.
North America Silicon Carbide (SiC) for Wireless EV Charging Market held a 34.5% share in 2024, driven by rising EV adoption, supportive government initiatives, and investments in advanced charging infrastructure. Environmental awareness and clean energy incentives are increasing demand for high-efficiency SiC technology. Manufacturers have opportunities to expand wireless EV charging networks in both urban and suburban areas, with strategic partnerships with utilities and investments in scalable SiC infrastructure helping to capture growing residential, commercial, and public transit charging demand.
Leading players in the Global Silicon Carbide (SiC) for Wireless EV Charging Market include Infineon Technologies, Mitsubishi Electric, Microchip Technology, STMicroelectronics, GeneSiC Semiconductor (Qorvo), onsemi (ON Semiconductor), UnitedSiC (Qorvo), Fuji Electric, Toshiba, ROHM Semiconductor, WiTricity Corporation, HEVO Inc., Littelfuse (IXYS), General Electric (GE), Electreon Wireless Ltd., Plugless Power Inc. (Evatran), Qualcomm Technologies (Halo), InductEV Inc., ABB Ltd., Robert Bosch GmbH, Toyota Motor Corporation, Siemens AG, and Continental AG. Companies in the Silicon Carbide (SiC) for Wireless EV Charging Market are strengthening their presence through strategies such as continuous product innovation, focusing on high-efficiency, thermally robust SiC MOSFETs and diodes. Many are forming strategic partnerships with EV OEMs and utility providers to integrate SiC solutions into wireless charging networks. Investments in scalable manufacturing processes, wafer quality improvements, and packaging optimization enhance reliability and reduce energy losses. Firms also focus on expanding regional presence, participating in collaborative research, and demonstrating high-performance applications to gain a competitive edge. Marketing efforts highlight the energy efficiency and compact design advantages of SiC-based solutions to attract both residential and commercial clients, solidifying their foothold in the growing EV ecosystem.