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半導體生產設備電力設備化合物半導體

市場調查報告書

商品編碼

1846114

2024-2031年GaN半導體裝置市場（按類型、裝置類型、應用和地區）

GaN Semiconductor Device Market By Type (Power Semiconductors, Optoelectronic Semiconductors), Device Type (Transistor, Diodes), Application (Power Electronics, RF Devices), & Region for 2024-2031

出版日期: 2025年08月11日 | 出版商:

Verified Market Research | 英文 202 Pages | 商品交期: 2-3個工作天內

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簡介目錄

GaN半導體裝置市場評估 - 2024-2031

智慧型手機、筆記型電腦等設備中高效能電力電子和無線射頻 (RF) 組件的使用日益增多，推動了 GaN 半導體裝置的普及。與傳統的矽基元件相比，GaN 元件具有更高的效率、更快的開關速度和更高的熱導率，因此預計 2024 年市場規模將超過 34.5 億美元，到 2031 年將達到約 105.4 億美元。

此外，GaN半導體裝置在電動車動力傳動系統和可再生能源系統中的日益普及也刺激了它們的應用。持續的研究和開發活動導致GaN元件的功能增強和成本降低，使市場在2024年至2031年期間的複合年成長率達到16.53%。

GaN半導體裝置市場定義/概述

GaN（氮化鎵）半導體元件是由寬能能隙材料氮化鎵製成的電子元件。與矽相比，GaN具有優異的電學特性，包括高擊穿電壓、高熱導率和快速開關。這些特性使GaN裝置能夠在更高的電壓、頻率和溫度下有效運作。

GaN半導體裝置廣泛應用於各領域。在家用電子電器中，其高效率和緊湊的尺寸使其能夠為充電器和適配器供電。在通訊，它們對於5G基礎設施和衛星通訊系統中的高頻、高功率應用至關重要。 GaN元件在汽車產業也佔據重要地位，用於電動車動力傳動系統和充電系統，並在可再生能源領域用於太陽能逆變器和風力發電機的高效功率轉換。它們也應用於工業系統、雷達、電子戰系統以及軍事和航太領域。

對節能電力電子裝置日益成長的需求將如何促進 GaN 半導體裝置的採用？

對節能電力電子日益成長的需求推動了GaN半導體裝置市場的發展。根據美國能源局的數據，與矽基替代品相比，基於GaN的功率元件可將能量損失降低高達50%。歐盟委員會報告稱，2020年至2023年間，GaN在電力電子領域的應用將成長35%。這一趨勢是由家用電子電器和汽車等各種應用對更高效率的需求所驅動。 2024年2月，英飛凌科技宣布將投資10億美元擴大其GaN產能。同樣，德克薩斯也於2024年4月宣布推出一系列以GaN為基礎的新型電源管理IC，瞄準電動車市場。

5G基礎設施的擴張正在推動對GaN射頻元件的需求。全球行動供應商協會報告稱，2023年部署的5G基地台台中，60%將使用基於GaN的射頻功率放大器。美國聯邦通訊委員會指出，2021年至2023年，用於無線基礎設施的GaN射頻裝置出貨量將成長40%。這一成長得益於GaN在高頻應用的卓越性能。 2024年3月，Qorvo宣布推出一系列針對5G毫米波應用的全新GaN-on-SiC射頻解決方案。 2024年5月，恩智浦半導體與一家大型通訊設備製造商合作，開發下一代基於GaN的5G大規模MIMO系統。

在汽車產業，向電動車和自動駕駛汽車的轉變正在推動GaN的應用。美國運輸部預測，到2025年，30%的電動車將使用GaN裝置。歐洲汽車工業協會的報告預測，從2022年到2024年，電動車中基於GaN的電力電子設備將成長55%。這一趨勢得益於GaN能夠提高功率轉換效率並減少整體系統尺寸。 2024年1月，安森美半導體宣布推出電動車車用充電器和DC-DC轉換器的全面GaN解決方案。 2024年6月，納維半導體宣布與一家大型汽車製造商建立策略合作夥伴關係，共同開發下一代電動車的基於GaN的動力傳動系統。

GaN半導體裝置的供應鏈是否有限？

GaN半導體裝置市場的發展受到其供應鏈不如矽成熟度的限制。 GaN材料和元件的供應有限，導致潛在的供應限制和成本上升。供應鏈的不成熟可能導致前置作業時間延長和供貨問題，進而影響生產計劃和可擴展性。

將 GaN 裝置整合到現有的矽基系統中可能非常複雜且成本高昂。由於材料和性能特性存在顯著差異，需要進行大量的重新設計和調整。這種複雜性增加了實施時間和成本，使企業難以無縫過渡到 GaN 技術。

GaN 面臨著來自另一種寬能能隙材料碳化矽 (SiC) 的激烈競爭。 SiC 裝置已在高功率應用中獲得廣泛認可，並具有高熱導率和堅固耐用等優勢。這種競爭可能會限制 GaN 裝置的成長潛力，尤其是在 SiC 佔據強勢地位的市場中。

儘管 GaN 裝置性能卓越，但它仍是一個相對較新的市場，因此其採用較為謹慎：潛在用戶可能會因為沒有經過廣泛的檢驗和可靠性證明而猶豫不決，從而導致市場滲透速度緩慢，因為行業需要時間來測試和信任 GaN 裝置的性能。

Increased use in high-performance power electronics and RF (radio frequency) components for devices like smartphones and laptops are propelling the adoption of GaN semiconductor device. GaN devices offer higher efficiency, faster switching speeds, and higher thermal conductivity compared to traditional silicon-based devices which is driving the market size surpass USD 3.45 Billion valued in 2024 to reach a valuation of around USD 10.54 Billion by 2031.

In addition to this, rising adoption in electric vehicle powertrains and renewable energy systems is spurring up the adoption of GaN semiconductor device. Ongoing research and development activities leading to enhanced GaN device capabilities and reduced costs is enabling the market grow at a CAGR of 16.53% from 2024 to 2031.

GaN Semiconductor Device Market: Definition/ Overview

GaN (Gallium Nitride) semiconductor devices are electronic components made from gallium nitride, a wide bandgap material. GaN offers superior electrical properties compared to silicon, such as higher breakdown voltage, greater thermal conductivity, and faster switching speeds. These properties make GaN devices highly efficient and capable of operating at higher voltages, frequencies, and temperatures.

GaN semiconductor devices are used across various sectors. In consumer electronics, the power chargers and adapters due to their efficiency and compact size. In telecommunications, they are integral to 5G infrastructure and satellite communication systems for high-frequency and high-power applications. GaN devices are also prominent in the automotive industry for electric vehicle powertrains and charging systems, and in renewable energy for efficient power conversion in solar inverters and wind turbines. Additionally, they find applications in industrial systems, military and aerospace for radar, and electronic warfare systems.

How will Growing Demand for Energy-Efficient Power Electronics Increase Adoption of GaN Semiconductor Device?

The growing demand for energy-efficient power electronics is driving the GaN semiconductor device market. According to the U.S. Department of Energy, GaN-based power devices can reduce energy losses by up to 50% compared to silicon alternatives. The European Commission reported that GaN adoption in power electronics increased by 35% between 2020 and 2023. This trend is fueled by the need for higher efficiency in various applications, including consumer electronics and automotive. In February 2024, Infineon Technologies announced a $1 billion investment to expand its GaN production capacity. Similarly, Texas Instruments introduced a new line of GaN-based power management ICs in April 2024, targeting the electric vehicle market.

The expansion of 5G infrastructure is boosting the demand for GaN RF devices. The Global Mobile Suppliers Association reported that GaN-based RF power amplifiers were used in 60% of 5G base stations deployed in 2023. The U.S. Federal Communications Commission noted a 40% increase in GaN RF device shipments for wireless infrastructure from 2021 to 2023. This growth is driven by GaN's superior performance in high-frequency applications. In March 2024, Qorvo unveiled a new series of GaN-on-SiC RF solutions for 5G mmWave applications. NXP Semiconductors partnered with a leading telecom equipment manufacturer in May 2024 to develop next-generation GaN-based 5G massive MIMO systems.

The automotive industry's shift towards electric and autonomous vehicles is propelling GaN adoption. The U.S. Department of Transportation projected that GaN devices would be used in 30% of electric vehicles by 2025. A report from the European Automobile Manufacturers Association showed a 55% increase in GaN-based power electronics in EVs from 2022 to 2024. This trend is driven by GaN's ability to improve power conversion efficiency and reduce overall system size. In January 2024, ON Semiconductor launched a comprehensive GaN solution for EV onboard chargers and DC-DC converters. Navitas Semiconductor announced in June 2024 a strategic partnership with a major automotive manufacturer to develop GaN-based powertrains for next-generation electric vehicles.

Will Limited Supply Chain of GaN Semiconductor Device Restrain Its Market Growth?

The GaN semiconductor device market is hindered by a less mature supply chain compared to silicon. The availability of GaN materials and components is limited, leading to potential supply constraints and higher costs. This immaturity in the supply chain can result in longer lead times and availability issues, impacting production schedules and scalability.

Integrating GaN devices with existing silicon-based systems can be complex and costly. The significant differences in material properties and performance characteristics necessitate substantial redesign and adaptation efforts. This complexity increases the time and cost for implementation, making it challenging for companies to seamlessly transition to GaN technology.

GaN faces strong competition from Silicon Carbide (SiC), another wide bandgap material. SiC devices are already well-established in high-power applications and offer advantages such as higher thermal conductivity and robustness. This competition can limit the growth potential for GaN devices, especially in markets where SiC has a strong foothold.

GaN devices, despite their superior performance, are relatively new to the market, leading to cautious adoption. Potential users may hesitate without extensive validation and proven reliability, causing market penetration to slow down as industries need time to test and trust GaN devices' performance..

Category-Wise Acumens

Will Rise in Adoption of Power Semiconductors Drive GaN Semiconductor Device Market?

Power semiconductors is emerging as the dominant segment in the GaN semiconductor device market. According to the U.S. Department of Energy, GaN-based power devices accounted for 45% of the total GaN semiconductor market in 2023. The European Power Electronics Association reported a 38% year-over-year growth in GaN power semiconductor adoption from 2021 to 2024. This dominance is driven by the increasing demand for high-efficiency power conversion in various applications. In February 2024, Infineon Technologies announced that its GaN power semiconductor revenue had doubled over the past two years. Texas Instruments introduced a new line of 650V GaN power stages in April 2024, targeting data center and industrial applications.

The electric vehicle (EV) sector is a key driver for GaN power semiconductor dominance. The U.S. Environmental Protection Agency reported that GaN power devices were used in 30% of new EVs sold in 2023, up from 15% in 2021. China's Ministry of Industry and Information Technology noted a 50% increase in GaN power semiconductor usage in EVs from 2022 to 2024. This trend is fueled by GaN's ability to improve power conversion efficiency and reduce overall system size. In March 2024, ON Semiconductor launched a 900V GaN power module specifically designed for EV traction inverters. Navitas Semiconductor partnered with a leading EV manufacturer in May 2024 to develop next-generation GaN-based onboard chargers.

The renewable energy sector is also contributing to the dominance of GaN power semiconductors. The International Energy Agency reported that GaN-based solar inverters achieved a market share of 25% in 2023, up from 10% in 2020. The U.S. National Renewable Energy Laboratory projected that GaN power devices could improve solar inverter efficiency by up to 3% by 2025. This growth is driven by the need for higher efficiency and power density in renewable energy systems. In January 2024, GaN Systems introduced a new series of power transistors optimized for solar and wind power applications. Transphorm announced in June 2024 the successful deployment of its GaN power devices in a large-scale energy storage project, demonstrating improved conversion efficiency and reliability.

Which Factors Contribute to Power Electronics Segment Dominance in GaN Semiconductor Device Market?

Power Electronics have emerged as the dominant application in the GaN Semiconductor Device Market. According to the U.S. Department of Energy, GaN-based power electronics accounted for 55% of the total GaN semiconductor market in 2023. The European Power Electronics Association reported a 42% year-over-year growth in GaN power electronics adoption from 2021 to 2024. This dominance is driven by the increasing demand for high-efficiency power conversion across various industries. In February 2024, Infineon Technologies announced that its GaN power electronics revenue had tripled over the past three years. Texas Instruments introduced a new line of GaN-based power management ICs in April 2024, targeting consumer electronics and industrial applications.

The electric vehicle (EV) sector is a key driver for GaN power electronics dominance. The U.S. Environmental Protection Agency reported that GaN power electronics were used in 40% of new EVs sold in 2023, up from 20% in 2021. China's Ministry of Industry and Information Technology noted a 60% increase in GaN power electronics usage in EVs from 2022 to 2024. This trend is fueled by GaN's ability to improve power conversion efficiency and reduce overall system size in EV powertrains. In March 2024, ON Semiconductor launched a comprehensive GaN power electronics solution for EV traction inverters and onboard chargers. Navitas Semiconductor partnered with a leading EV manufacturer in May 2024 to develop next-generation GaN-based power electronic systems for electric vehicles.

The renewable energy sector is also contributing to the dominance of GaN power electronics. The International Energy Agency reported that GaN-based solar inverters achieved a market share of 30% in 2023, up from 12% in 2020. The U.S. National Renewable Energy Laboratory projected that GaN power electronics could improve overall solar system efficiency by up to 5% by 2025. This growth is driven by the need for higher efficiency and power density in renewable energy systems. In January 2024, GaN Systems introduced a new series of power modules optimized for solar and wind power applications. Transphorm announced in June 2024 the successful deployment of its GaN power electronics in a large-scale grid-tied energy storage project, demonstrating improved conversion efficiency and reliability.

Country/Region-wise Acumens

Will Rising Industrialization Enhance Adoption of GaN Semiconductor Device in Asia Pacific?

The Asia Pacific region has emerged as the dominant player in the GaN semiconductor device market. According to China's Ministry of Industry and Information Technology, the country's GaN device production increased by 45% from 2021 to 2023. Japan's Ministry of Economy, Trade and Industry reported that GaN semiconductor exports grew by 38% between 2020 and 2024. This dominance is driven by strong government support and a robust electronics manufacturing ecosystem. In February 2024, Taiwan Semiconductor Manufacturing Company (TSMC) announced a $2 billion investment to expand its GaN fabrication capacity. South Korea's Samsung Electronics introduced a new line of GaN-based power devices in April 2024, targeting the consumer electronics and automotive markets.

The rapid adoption of 5G technology in Asia Pacific is fueling the demand for GaN RF devices. China's National Bureau of Statistics reported that GaN-based RF power amplifiers were used in 70% of 5G base stations deployed in the country by 2023. The Indian Department of Telecommunications noted a 55% increase in GaN RF device imports for wireless infrastructure from 2022 to 2024. This growth is driven by GaN's superior performance in high-frequency applications. In March 2024, Sumitomo Electric Industries unveiled a new series of GaN-on-SiC RF solutions for 5G mmWave applications. Mitsubishi Electric partnered with a leading Chinese telecom equipment manufacturer in May 2024 to develop next-generation GaN-based 5G massive MIMO systems.

Will Increasing Demand for High-Power and High-Frequency Applications in North America Drive GaN Semiconductor Device Market Growth?

North America's GaN semiconductor device market is experiencing rapid growth, driven by increasing demand for high-power and high-frequency applications. The region's robust technological infrastructure and strong presence of key industry players contribute to its market dominance. The automotive and telecommunications sectors are particularly fuelling this growth, as GaN devices offer superior performance in electric vehicles and 5G networks.

According to the U.S. Department of Energy, GaN-based power electronics could reduce energy losses by up to 50% in various applications. The U.S. government has allocated $17 million for GaN research and development in 2023. Market analysts predict that the North American GaN semiconductor device market will reach $1.2 billion by 2026, with a compound annual growth rate (CAGR) of 22.4% from 2021 to 2026.

Recent developments from key players underscore the market's dynamism. In March 2024, Wolfspeed announced a $6.5 billion investment in a new GaN fabrication facility in North Carolina. Qorvo, another major player, reported a 35% year-over-year increase in GaN-related revenues in their Q2 2024 earnings call. These advancements highlight the region's commitment to maintaining its leadership in GaN semiconductor technology.

Competitive Landscape

The GaN semiconductor device market is a dynamic and competitive space, characterized by a diverse range of players vying for market share. These players are on the run for solidifying their presence through the adoption of strategic plans such as collaborations, mergers, acquisitions, and political support.

The organizations are focusing on innovating their product line to serve the vast population in diverse regions. Some of the prominent players operating in the GaN semiconductor device market include:

Cree, Inc. (Wolfspeed)
Infineon Technologies AG
Qorvo, Inc.
NXP Semiconductors N.V.
MACOM Technology Solutions Holdings, Inc.
Efficient Power Conversion (EPC) Corporation
Texas Instruments Incorporated
STMicroelectronics N.V.
GaN Systems, Inc.
Analog Devices, Inc.
Transphorm, Inc.
Mitsubishi Electric Corporation
Sumitomo Electric Device Innovations, Inc.
VisIC Technologies Ltd.
Navitas Semiconductor Inc.
Exagan S.A.S.
Ampleon Netherlands B.V.
NexGen Power Systems
Panasonic Corporation
Microsemi Corporation (Microchip Technology, Inc.)

Latest Developments

In January 2024, Infineon Technologies announced the launch of its new generation of GaN-based power transistors designed for high-efficiency power conversion in electric vehicles, promising up to 30% reduction in energy loss.
In March 2024, Cree Inc. introduced a groundbreaking GaN-on-SiC RF amplifier that provides enhanced performance for 5G infrastructure, offering a 50% increase in power density compared to previous models.