伺服器DRAM需求激增，推動主要供應商提高產量

根據TrendForce研究顯示，人工智慧需求的激增導致DRAM供應趨緊。三星、SK海力士和美光計畫在2026年之前擴大DRAM產能。

主要亮點

• 人工智慧驅動的需求：由於人工智慧應用的興起，包括DDR5和HBM在內的伺服器DRAM需求正在飆升。
• 產能短缺：不斷增長的需求使DRAM晶圓產能捉襟見肘，製造商正在將NAND快閃生產設施改造為DRAM生產線。
• 三星擴張計畫：三星正在減少NAND快閃記憶體產量，並擴大DRAM產量。它正在逐步提高其P4L晶圓廠的產能。
• SK海力士的策略調整：SK海力士計劃將其清州工廠的部分空間改造為HBM生產線，並新建一座M15X工廠以擴大DRAM產能。
• 美光的戰略與挑戰：面對無塵室空間的限制，美光計畫擴大其在美國的產能，並提高其台灣台中工廠的DRAM產量。
• 市場預測：儘管DRAM產量預計將會增加，但不斷增長的需求將打破供需平衡，導致2026年DRAM供應短缺。

本報告分析了全球DRAM供需趨勢，總結了需求成長背後的因素、主要供應商的應對措施以及未來供需平衡的前景。

目錄

第一章：三大DRAM供應商正在加速製程升級以提高產量，但預計CSP採購需求的急劇成長將導致2026年DRAM供應短缺。

第二章：三星將專注於平澤的DRAM，調整產能分配，並同時建造新工廠和改造生產線。

• 三星：開始生產DRAM和NAND快閃晶圓

第三章：HBM需求推動產能擴張，M15X成為新晶圓生產的主要重點。

• SK海力士：開始生產DRAM和NAND快閃晶圓

第四章：由於無塵室空間有限，美光正在等待為其在美國新建的晶圓廠提供資金以推動擴張。

• 美光：DRAM晶圓生產啟動
• 三大廠商的新晶圓產能計劃
• HBM和DDR5晶圓的平均價格
• DRAM位供應、位需求及供需平衡

TrendForce shows AI-driven DRAM demand surge, creating supply tension. Samsung, SK hynix, and Micron plan to expand DRAM production through 2026.

Key Highlights

• AI-Driven Demand Growth: Increasing AI applications have spurred Server's demand for DRAM, including DDR5 and HBM.
• Capacity Shortfall: High demand has led to tight DRAM wafer production capacity, with manufacturers transitioning NAND Flash facilities to DRAM.
• Samsung's Expansion Plan: Samsung is reducing NAND Flash production to expand DRAM outputs, gradually enhancing P4L fabs' capacity.
• SK hynix Strategy Adjustment: SK hynix is converting Cheongju fab space to HBM capacity and building a new M15X fab to boost DRAM production.
• Micron's Strategy and Challenges: Facing limited cleanroom space, Micron plans to expand capacity in the US and increase DRAM output from Taiwan's Taichung fab.
• Market Forecast: Though DRAM output is set to rise, demand growth ensures a supply-demand imbalance, with DRAM supply expected to fall short in 2026.

Table of Contents

1. Three Major DRAM Suppliers Are Accelerating Process Upgrades to Increase Output, but DRAM Supply Shortage Will Persist in 2026 Due to Soaring Growth of CSPs' Procurement Demand

2. Samsung Adjusts Production Capacity Distribution with a Focus on DRAM in Pyeongtaek, Engaging New Fab Construction and Production Line Conversion Simultaneously

• Samsung's DRAM and NAND Flash Wafer Starts

3. M15X to Become Main Driver for New Wafer Starts as Demand for HBM Triggers Capacity Expansions

• SK hynix's DRAM and NAND Flash Wafer Starts

4. Micron Awaits Contributions from New US Fab for Momentum of Expansions Due to Restricted Space of Clean Rooms

• Micron's DRAM Wafer Starts
• Capacity Plans for New Fabs among the Three Major Suppliers
• Per-Wafer ASPs of HBM and DDR5
• Supply and Demand Bits and S/D of DRAM