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絕緣柵雙極電晶體 (IGBT) 市場預測（至 2032 年）：按類型、額定功率、開關頻率、封裝類型、晶圓尺寸、最終用戶和地區進行的全球分析

Insulated-Gate Bipolar Transistors (IGBTs) Market Forecasts to 2032 - Global Analysis By Type (Discrete IGBT, IGBT Module and Intelligent Power Module (IPM)), Power Rating, Switching Frequency, Packaging Type, Wafer Size, End User and By Geography
出版日期: | 出版商: Stratistics Market Research Consulting | 英文 200+ Pages | 商品交期: 2-3個工作天內

價格

根據 Stratistics MRC 的數據，全球絕緣柵雙極電晶體 (IGBT) 市場預計在 2025 年達到 151 億美元，到 2032 年將達到 294 億美元，預測期內的複合年成長率為 10%。

絕緣柵雙極電晶體 (IGBT) 是一種半導體裝置，它結合了 MOSFET 的高輸入電阻和雙極電晶體的低飽和壓降，從而實現高效的功率開關。 IGBT 廣泛應用於電動車、可再生能源系統、馬達驅動裝置和工業設備等應用。 IGBT 能夠實現高效的功率轉換，處理高電壓和高電流，同時降低能量損耗。其設計支援要求嚴苛的電子系統的小型化、堅固性和可靠性。

據國際能源總署（IEA）稱，電動車產量和電動車充電基礎設施的爆炸性成長是下一代IGBT模組製造能力提升和技術創新的主要驅動力。

高效電力電子的需求

IGBT 市場受到日益成長的高效電力電子元件需求的強勁推動，這些元件能夠實現節能和高效能轉換。可再生能源、電動車和工業驅動裝置的應用日益增多，凸顯了對可靠開關元件的需求。 IGBT 具有低傳導損耗、高電流密度和高耐用性，是現代電源架構不可或缺的裝置。此外，隨著各行各業尋求節能解決方案，全球永續性的趨勢也進一步推動了 IGBT 的應用。這一趨勢鞏固了 IGBT 作為先進電子系統基石的地位。

IGBT 的溫度控管挑戰

IGBT 市場發展的主要限制因素在於其溫度控管挑戰，這阻礙了其實現最佳性能。高開關損耗和傳導損耗會產生熱量，需要複雜的冷卻系統來確保可靠性。這增加了設計複雜性和成本，尤其是在電動車逆變器和電網系統等高壓應用中。如果無法有效管理熱量，則會降低效率和裝置壽命，從而阻礙其廣泛應用。因此，對於尋求在高能耗、高效能應用中推廣 IGBT 的製造商來說，熱瓶頸仍然是一個持續存在的障礙。

整合到工業自動化系統中

IGBT 與工業自動化系統的整合代表著巨大的市場擴展機會。自動化製造、機器人技術和智慧工廠依賴高效的功率裝置來精確驅動馬達和控制系統。 IGBT 能夠實現緊湊、節能的設計，從而降低營運成本並提高生產力。隨著工業 4.0 在全球範圍內的加速應用，對可靠功率半導體的需求也隨之飆升。這項產業轉型為 IGBT 供應商擴大市場範圍並進入各種自動化驅動應用領域提供了肥沃的土壤。

與寬能能隙半導體的競爭

IGBT 市場面臨來自 SiC 和 GaN 等寬能能隙半導體的顯著威脅。這些替代半導體具有卓越的效率、更快的開關速度和更佳的熱性能，對電動車和可再生逆變器等應用中的 IGBT 構成了挑戰。隨著 SiC 和 GaN 裝置成本的下降，終端用戶擴大轉向這些先進材料。這一趨勢可能會限制 IGBT 在高效能領域的成長。因此，儘管 IGBT 仍然很重要，但來自寬能能隙技術的競爭將對 IGBT 的主導地位構成長期風險。

COVID-19的影響

新冠疫情擾亂了IGBT市場的供應鏈，導致生產停頓和出貨放緩。作為主要終端用戶的汽車和工業領域一度放緩，導致需求下降。然而，在電動車普及率加快、可再生能源投資和數位轉型舉措的推動下，市場復甦迅速。疫情過後，世界各國政府更加重視綠色能源計劃，為IGBT在電網和行動移動領域的應用創造了新的機會。整體而言，儘管短期內遭遇了重大挫折，但疫情凸顯了高韌性、高能源效率的電力電子解決方案的重要性。

預計分立式 IGBT 市場在預測期內將佔據最大佔有率

由於分立式IGBT廣泛應用於馬達驅動器、UPS系統和可再生能源逆變器，預計將在預測期內佔據最大的市場佔有率。分離式IGBT具有靈活性、緊湊的設計和成本優勢，非常適合汽車、家電和工業領域的中等功率應用。其易於整合和可靠性確保了其在新興市場的持續應用。因此，分立式IGBT仍然是全球電力電子領域的主要產品類型。

預計預測期內離散封裝部分將以最高的複合年成長率成長。

由於對緊湊型和高熱效率電源解決方案的需求不斷成長，預計分立封裝領域將在預測期內實現最高成長率。與基於模組的設計相比，分立封裝具有更高的擴充性、更易於設計整合和成本最佳化。它們在汽車電子產品（尤其是電動車逆變器和充電系統）中的作用日益增強，進一步刺激了其應用。此外，先進的封裝技術提高了可靠性和效率。這些優勢使分立封裝成為IGBT市場成長最快的領域。

比最大的地區

受快速工業化、電動車產量擴張以及強勁的可再生能源計畫的推動，亞太地區預計將在預測期內佔據最大的市場佔有率。中國、日本和韓國等國家是功率半導體的主要採用者，擁有強大的製造生態系統。在智慧電網、交通電氣化和家用電器領域的巨額投資進一步刺激了該地區的需求。此外，低成本的製造能力也吸引了全球供應商。這些動態使亞太地區成為IGBT部署和創新的關鍵樞紐。

複合年成長率最高的地區

預計北美地區在預測期內將出現最高的複合年成長率。這得歸功於電動車的普及、可再生能源的整合以及工業自動化的加速發展。政府支持減少二氧化碳排放和採用清潔能源的政策正在活性化對先進電力電子裝置的投資。汽車電氣化和電網現代化計劃，尤其是在美國，正在推動對 IGBT 的需求。此外，技術創新者和研發中心的存在也推動了該地區的成長。這些因素共同作用，使北美成為成長最快的 IGBT 市場。

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目錄

第1章執行摘要

第2章 前言

  • 概述
  • 相關利益者
  • 調查範圍
  • 調查方法
    • 資料探勘
    • 數據分析
    • 數據檢驗
    • 研究途徑
  • 研究材料
    • 主要研究資料
    • 次級研究資訊來源
    • 先決條件

第3章市場走勢分析

  • 驅動程式
  • 抑制因素
  • 機會
  • 威脅
  • 最終用戶分析
  • 新興市場
  • COVID-19的影響

第4章 波特五力分析

  • 供應商的議價能力
  • 買方的議價能力
  • 替代品的威脅
  • 新進入者的威脅
  • 競爭對手之間的競爭

5. 全球絕緣柵雙極電晶體（IGBT）市場類型

  • 分立IGBT
  • IGBT模組
  • 智慧功率模組（IPM）

6. 全球絕緣柵雙極電晶體 (IGBT) 市場（按功率等級）

  • 低功率IGBT（最高600V）
  • 中功率IGBT（601 V至1.2 kV）
  • 高功率IGBT（1.2kV至3.3kV）
  • 高功率IGBT（3.3kV至6.5kV）

7. 全球絕緣柵雙極電晶體 (IGBT) 市場（按開關頻率）

  • 低頻IGBT（10kHz以下）
  • 高頻IGBT（10kHz或更高）

8. 全球絕緣柵雙極電晶體（IGBT）市場（以封裝類型）

  • 分立封裝
  • 模組包
  • 雙列直插式封裝（DIP）
  • 表面黏著技術封裝（SMD）
  • 壓接式IGBT

9. 全球絕緣柵雙極電晶體（IGBT）市場（以晶圓尺寸）

  • 6吋晶圓
  • 8吋晶圓

第 10 章全球絕緣柵雙極電晶體 (IGBT) 市場（按最終用戶）

  • 汽車和運輸
  • 能源與公共產業
  • 工業製造
  • 家電
  • 其他

第 11 章全球絕緣柵雙極電晶體 (IGBT) 市場（按地區）

  • 北美洲
    • 美國
    • 加拿大
    • 墨西哥
  • 歐洲
    • 德國
    • 英國
    • 義大利
    • 法國
    • 西班牙
    • 其他歐洲國家
  • 亞太地區
    • 日本
    • 中國
    • 印度
    • 澳洲
    • 紐西蘭
    • 韓國
    • 其他亞太地區
  • 南美洲
    • 阿根廷
    • 巴西
    • 智利
    • 其他南美
  • 中東和非洲
    • 沙烏地阿拉伯
    • 阿拉伯聯合大公國
    • 卡達
    • 南非
    • 其他中東和非洲地區

第12章 重大進展

  • 協議、夥伴關係、合作和合資企業
  • 收購與合併
  • 新產品發布
  • 業務擴展
  • 其他關鍵策略

第13章：企業概況

  • Infineon Technologies AG
  • Mitsubishi Electric Corporation
  • Fuji Electric Co., Ltd.
  • ON Semiconductor（onsemi）
  • STMicroelectronics
  • Toshiba Corporation
  • Renesas Electronics Corporation
  • ROHM Co., Ltd.
  • SEMIKRON Danfoss
  • ABB Ltd
  • Hitachi, Ltd.
  • NXP Semiconductors
  • Littelfuse, Inc.
  • Vishay Intertechnology, Inc.
  • ELAN Electronics
  • Powerex
  • SMIC
  • Microsemi
Product Code: SMRC30740

According to Stratistics MRC, the Global Insulated-Gate Bipolar Transistors (IGBTs) Market is accounted for $15.1 billion in 2025 and is expected to reach $29.4 billion by 2032 growing at a CAGR of 10% during the forecast period. Insulated-Gate Bipolar Transistors (IGBTs) are semiconductor devices that combine the high input impedance of MOSFETs with the low saturation voltage of bipolar transistors, making them highly efficient for power switching. They are used in applications such as electric vehicles, renewable energy systems, motor drives, and industrial equipment. IGBTs enable efficient power conversion, reducing energy losses while handling high voltages and currents. Their design supports compactness, durability, and reliability in demanding electronic systems.

According to the International Energy Agency (IEA), the explosive growth in electric vehicle production and EV charging infrastructure is the primary driver for increased manufacturing capacity and innovation in next-generation IGBT modules.

Market Dynamics:

Driver:

Demand for efficient power electronics

The IGBT market is strongly driven by the growing demand for efficient power electronics that enable energy savings and high-performance conversion. Increasing applications in renewable energy, electric vehicles, and industrial drives emphasize the need for reliable switching devices. IGBTs offer low conduction losses, high current density, and durability, making them vital in modern power architectures. Additionally, the global shift toward sustainability further boosts adoption, as industries seek energy-efficient solutions. This trend solidifies IGBTs as a cornerstone in advanced electronic systems.

Restraint:

Thermal management challenges in IGBTs

A major restraint in the IGBT market stems from thermal management challenges that hinder optimal performance. High switching and conduction losses generate heat, requiring advanced cooling systems for reliability. This increases design complexity and costs, especially in high-voltage applications like EV inverters and grid systems. Failure to effectively manage heat can reduce efficiency and device lifespan, discouraging wider adoption. Consequently, thermal bottlenecks remain a persistent hurdle for manufacturers aiming to expand IGBT deployment across energy-intensive and high-performance sectors.

Opportunity:

Integration in industrial automation systems

The integration of IGBTs in industrial automation systems represents a key opportunity for market expansion. Automated manufacturing, robotics, and smart factories rely on high-efficiency power devices to drive motors and control systems with precision. IGBTs enable compact, energy-efficient designs that reduce operational costs while enhancing productivity. With Industry 4.0 adoption accelerating worldwide, demand for reliable power semiconductors is surging. This industrial transformation provides a fertile ground for IGBT suppliers to expand market reach and tap into diverse automation-driven applications.

Threat:

Competition from wide bandgap semiconductors

The IGBT market faces a notable threat from wide bandgap semiconductors such as SiC and GaN. These alternatives offer superior efficiency, higher switching speeds, and better thermal performance, challenging IGBTs in applications like EVs and renewable inverters. As costs for SiC and GaN devices decline, end-users are increasingly shifting to these advanced materials. This trend could potentially limit IGBT growth in high-performance segments. Therefore, while IGBTs remain relevant, competition from wide bandgap technologies poses a long-term risk to their dominance.

Covid-19 Impact:

The COVID-19 pandemic initially disrupted supply chains, halting production and delaying shipments in the IGBT market. Automotive and industrial sectors, key end-users, experienced a temporary downturn, reducing demand. However, recovery was swift, fueled by accelerated EV adoption, renewable energy investments, and digital transformation initiatives. Post-pandemic, governments emphasized green energy projects, creating new opportunities for IGBTs in grid and mobility applications. Overall, while short-term setbacks were significant, the pandemic underscored the importance of resilient and energy-efficient power electronics solutions.

The discrete IGBT segment is expected to be the largest during the forecast period

The discrete IGBT segment is expected to account for the largest market share during the forecast period, owing to its widespread use in motor drives, UPS systems, and renewable energy inverters. Discrete IGBTs offer flexibility, compact design, and cost advantages, making them suitable for medium-power applications across automotive, consumer electronics, and industrial domains. Their ease of integration and reliability have ensured continued adoption across emerging markets. Consequently, discrete IGBTs remain the dominant product type in the global power electronics landscape.

The discrete packaging segment is expected to have the highest CAGR during the forecast period

Over the forecast period, the discrete packaging segment is predicted to witness the highest growth rate, driven by rising demand for compact and thermally efficient power solutions. Discrete packages enable better scalability, ease of design integration, and cost optimization compared to module-based designs. Their expanding role in automotive electronics, especially EV inverters and charging systems, further accelerates adoption. Moreover, advancements in packaging technologies improve reliability and efficiency. These advantages collectively position discrete packaging as the fastest-expanding segment in the IGBT market.

Region with largest share:

During the forecast period, the Asia Pacific region is expected to hold the largest market share, driven by rapid industrialization, expanding EV production, and strong renewable energy initiatives. Countries like China, Japan, and South Korea are leading adopters, with robust manufacturing ecosystems for power semiconductors. Significant investments in smart grids, transportation electrification, and consumer electronics further amplify regional demand. Additionally, low-cost manufacturing capabilities attract global suppliers. These dynamics establish Asia Pacific as the dominant hub for IGBT deployment and innovation.

Region with highest CAGR:

Over the forecast period, the North America region is anticipated to exhibit the highest CAGR, attributed to accelerating EV adoption, renewable integration, and industrial automation. Government policies supporting carbon reduction and clean energy deployment drive strong investments in advanced power electronics. The U.S. in particular is witnessing rising demand for IGBTs in automotive electrification and grid modernization projects. Additionally, the presence of technology innovators and R&D centers accelerates regional growth. Together, these factors make North America the fastest-growing IGBT market.

Key players in the market

Some of the key players in Insulated-Gate Bipolar Transistors (IGBTs) Market include Infineon Technologies AG, Mitsubishi Electric Corporation, Fuji Electric Co., Ltd., ON Semiconductor (onsemi), STMicroelectronics, Toshiba Corporation, Renesas Electronics Corporation, ROHM Co., Ltd., SEMIKRON Danfoss, ABB Ltd, Hitachi, Ltd., NXP Semiconductors, Littelfuse, Inc., Vishay Intertechnology, Inc., ELAN Electronics, Powerex, SMIC, and Microsemi.

Key Developments:

In May 2025, Infineon Technologies AG began volume production of its new CoolSiC(TM) hybrid IGBTs at its expanded facility in Villach, Austria. These modules combine Si IGBT and SiC diode technology to offer a cost-effective performance boost for industrial motor drives.

In April 2025, STMicroelectronics and Renault Group signed a long-term agreement for the supply of ST's ACEPACK DRIVE power modules, which use advanced IGBTs and SiC technology, for Renault's upcoming electric vehicle platforms.

In March 2025, onsemi (ON Semiconductor) announced the opening of its state-of-the-art IGBT and SiC module production line in Bucheon, South Korea, to better serve the growing APAC market for electric vehicle and industrial automation power solutions.

In February 2025, Fuji Electric Co., Ltd. launched the "X-series" of 7th generation IGBT modules, which feature a 10% increase in maximum operating temperature (Tvjop) to 175°C, enabling higher power density in solar inverters and UPS systems.

Types Covered:

  • Discrete IGBT
  • IGBT Module
  • Intelligent Power Module (IPM)

Power Ratings Covered:

  • Low Power IGBT (Up to 600 V)
  • Medium Power IGBT (601 V - 1.2 kV)
  • High Power IGBT (1.2 kV - 3.3 kV)
  • Very High Power IGBT (3.3 kV - 6.5 kV)

Switching Frequencies Covered:

  • Low-Frequency IGBT (Below 10 kHz)
  • High-Frequency IGBT (Above 10 kHz)

Packaging Types Covered:

  • Discrete Packaging
  • Module Packaging
  • Dual-In-Line Package (DIP)
  • Surface-Mount Package (SMD)
  • Press-Pack IGBT

Wafer Sizes Covered:

  • 6-Inch Wafer
  • 8-Inch Wafer

End Users Covered:

  • Automotive & Transportation
  • Energy & Utilities
  • Industrial Manufacturing
  • Consumer Electronics
  • Other End Users

Regions Covered:

  • North America
    • US
    • Canada
    • Mexico
  • Europe
    • Germany
    • UK
    • Italy
    • France
    • Spain
    • Rest of Europe
  • Asia Pacific
    • Japan
    • China
    • India
    • Australia
    • New Zealand
    • South Korea
    • Rest of Asia Pacific
  • South America
    • Argentina
    • Brazil
    • Chile
    • Rest of South America
  • Middle East & Africa
    • Saudi Arabia
    • UAE
    • Qatar
    • South Africa
    • Rest of Middle East & Africa

What our report offers:

  • Market share assessments for the regional and country-level segments
  • Strategic recommendations for the new entrants
  • Covers Market data for the years 2024, 2025, 2026, 2028, and 2032
  • Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations)
  • Strategic recommendations in key business segments based on the market estimations
  • Competitive landscaping mapping the key common trends
  • Company profiling with detailed strategies, financials, and recent developments
  • Supply chain trends mapping the latest technological advancements

Free Customization Offerings:

All the customers of this report will be entitled to receive one of the following free customization options:

  • Company Profiling
    • Comprehensive profiling of additional market players (up to 3)
    • SWOT Analysis of key players (up to 3)
  • Regional Segmentation
    • Market estimations, Forecasts and CAGR of any prominent country as per the client's interest (Note: Depends on feasibility check)
  • Competitive Benchmarking
    • Benchmarking of key players based on product portfolio, geographical presence, and strategic alliances

Table of Contents

1 Executive Summary

2 Preface

  • 2.1 Abstract
  • 2.2 Stake Holders
  • 2.3 Research Scope
  • 2.4 Research Methodology
    • 2.4.1 Data Mining
    • 2.4.2 Data Analysis
    • 2.4.3 Data Validation
    • 2.4.4 Research Approach
  • 2.5 Research Sources
    • 2.5.1 Primary Research Sources
    • 2.5.2 Secondary Research Sources
    • 2.5.3 Assumptions

3 Market Trend Analysis

  • 3.1 Introduction
  • 3.2 Drivers
  • 3.3 Restraints
  • 3.4 Opportunities
  • 3.5 Threats
  • 3.6 End User Analysis
  • 3.7 Emerging Markets
  • 3.8 Impact of Covid-19

4 Porters Five Force Analysis

  • 4.1 Bargaining power of suppliers
  • 4.2 Bargaining power of buyers
  • 4.3 Threat of substitutes
  • 4.4 Threat of new entrants
  • 4.5 Competitive rivalry

5 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type

  • 5.1 Introduction
  • 5.2 Discrete IGBT
  • 5.3 IGBT Module
  • 5.4 Intelligent Power Module (IPM)

6 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating

  • 6.1 Introduction
  • 6.2 Low Power IGBT (Up to 600 V)
  • 6.3 Medium Power IGBT (601 V - 1.2 kV)
  • 6.4 High Power IGBT (1.2 kV - 3.3 kV)
  • 6.5 Very High Power IGBT (3.3 kV - 6.5 kV)

7 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Switching Frequency

  • 7.1 Introduction
  • 7.2 Low-Frequency IGBT (Below 10 kHz)
  • 7.3 High-Frequency IGBT (Above 10 kHz)

8 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Packaging Type

  • 8.1 Introduction
  • 8.2 Discrete Packaging
  • 8.3 Module Packaging
  • 8.4 Dual-In-Line Package (DIP)
  • 8.5 Surface-Mount Package (SMD)
  • 8.6 Press-Pack IGBT

9 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Wafer Size

  • 9.1 Introduction
  • 9.2 6-Inch Wafer
  • 9.3 8-Inch Wafer

10 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By End User

  • 10.1 Introduction
  • 10.2 Automotive & Transportation
  • 10.3 Energy & Utilities
  • 10.4 Industrial Manufacturing
  • 10.5 Consumer Electronics
  • 10.6 Other End Users

11 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Geography

  • 11.1 Introduction
  • 11.2 North America
    • 11.2.1 US
    • 11.2.2 Canada
    • 11.2.3 Mexico
  • 11.3 Europe
    • 11.3.1 Germany
    • 11.3.2 UK
    • 11.3.3 Italy
    • 11.3.4 France
    • 11.3.5 Spain
    • 11.3.6 Rest of Europe
  • 11.4 Asia Pacific
    • 11.4.1 Japan
    • 11.4.2 China
    • 11.4.3 India
    • 11.4.4 Australia
    • 11.4.5 New Zealand
    • 11.4.6 South Korea
    • 11.4.7 Rest of Asia Pacific
  • 11.5 South America
    • 11.5.1 Argentina
    • 11.5.2 Brazil
    • 11.5.3 Chile
    • 11.5.4 Rest of South America
  • 11.6 Middle East & Africa
    • 11.6.1 Saudi Arabia
    • 11.6.2 UAE
    • 11.6.3 Qatar
    • 11.6.4 South Africa
    • 11.6.5 Rest of Middle East & Africa

12 Key Developments

  • 12.1 Agreements, Partnerships, Collaborations and Joint Ventures
  • 12.2 Acquisitions & Mergers
  • 12.3 New Product Launch
  • 12.4 Expansions
  • 12.5 Other Key Strategies

13 Company Profiling

  • 13.1 Infineon Technologies AG
  • 13.2 Mitsubishi Electric Corporation
  • 13.3 Fuji Electric Co., Ltd.
  • 13.4 ON Semiconductor (onsemi)
  • 13.5 STMicroelectronics
  • 13.6 Toshiba Corporation
  • 13.7 Renesas Electronics Corporation
  • 13.8 ROHM Co., Ltd.
  • 13.9 SEMIKRON Danfoss
  • 13.10 ABB Ltd
  • 13.11 Hitachi, Ltd.
  • 13.12 NXP Semiconductors
  • 13.13 Littelfuse, Inc.
  • 13.14 Vishay Intertechnology, Inc.
  • 13.15 ELAN Electronics
  • 13.16 Powerex
  • 13.17 SMIC
  • 13.18 Microsemi

List of Tables

  • Table 1 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Region (2024-2032) ($MN)
  • Table 2 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Type (2024-2032) ($MN)
  • Table 3 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Discrete IGBT (2024-2032) ($MN)
  • Table 4 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By IGBT Module (2024-2032) ($MN)
  • Table 5 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Intelligent Power Module (IPM) (2024-2032) ($MN)
  • Table 6 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Power Rating (2024-2032) ($MN)
  • Table 7 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Low Power IGBT (Up to 600 V) (2024-2032) ($MN)
  • Table 8 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Medium Power IGBT (601 V - 1.2 kV) (2024-2032) ($MN)
  • Table 9 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By High Power IGBT (1.2 kV - 3.3 kV) (2024-2032) ($MN)
  • Table 10 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Very High Power IGBT (3.3 kV - 6.5 kV) (2024-2032) ($MN)
  • Table 11 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Switching Frequency (2024-2032) ($MN)
  • Table 12 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Low-Frequency IGBT (Below 10 kHz) (2024-2032) ($MN)
  • Table 13 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By High-Frequency IGBT (Above 10 kHz) (2024-2032) ($MN)
  • Table 14 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Packaging Type (2024-2032) ($MN)
  • Table 15 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Discrete Packaging (2024-2032) ($MN)
  • Table 16 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Module Packaging (2024-2032) ($MN)
  • Table 17 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Dual-In-Line Package (DIP) (2024-2032) ($MN)
  • Table 18 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Surface-Mount Package (SMD) (2024-2032) ($MN)
  • Table 19 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Press-Pack IGBT (2024-2032) ($MN)
  • Table 20 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Wafer Size (2024-2032) ($MN)
  • Table 21 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By 6-Inch Wafer (2024-2032) ($MN)
  • Table 22 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By 8-Inch Wafer (2024-2032) ($MN)
  • Table 23 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By End User (2024-2032) ($MN)
  • Table 24 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Automotive & Transportation (2024-2032) ($MN)
  • Table 25 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Energy & Utilities (2024-2032) ($MN)
  • Table 26 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Industrial Manufacturing (2024-2032) ($MN)
  • Table 27 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Consumer Electronics (2024-2032) ($MN)
  • Table 28 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Other End Users (2024-2032) ($MN)

Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.