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市場調查報告書
商品編碼
1872064
SiC MOSFET晶片(元件)和模組:2025-2031年全球市場佔有率和排名、總收入和需求預測SiC MOSFET Chips (Devices) and Module - Global Market Share and Ranking, Overall Sales and Demand Forecast 2025-2031 |
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2024 年全球 SiC MOSFET 晶片(元件)和模組的市場規模估計為 10.54 億美元,預計在預測期(2025-2031 年)內將以 26.6% 的複合年成長率成長,到 2031 年達到 61.53 億美元。
本報告對近期碳化矽MOSFET晶片(元件)和模組的關稅調整和國際戰略反制措施進行了全面評估,包括其對跨境產業佈局、資本配置模式、區域經濟相互依存關係和供應鏈重組的影響。
碳化矽金屬氧化物場效電晶體(SiC MOSFET)晶片是一種採用碳化矽(SiC)材料製造的新型功率半導體晶片。與傳統的矽(Si)材料相比,SiC具有更寬的能隙(能隙寬度約為3.26 eV,而矽的能隙寬度約為1.12 eV),這使得SiC MOSFET晶片具有一系列優異的性能特性。
SiC MOSFET元件是完整的半導體元件,其核心是SiC MOSFET晶片,並包含必要的封裝材料和引腳。封裝對於SiC MOSFET元件至關重要,它不僅能為晶片提供物理保護(防止機械損傷和潮濕腐蝕),還能實現晶片與外部電路之間的電氣連接。 SiC MOSFET元件的常用封裝形式包括TO-247和TO-220。例如,TO-247封裝具有出色的散熱性能,能夠快速散發晶片工作過程中產生的熱量,即使在高溫環境下也能確保裝置穩定運作。
SiC MOSFET模組透過特定的電路拓撲結構,將多個SiC MOSFET元件和二極體等輔助元件整合到單一功率模組中。這種整合設計具有諸多優勢。首先,模組內元件間最佳化的電路連接實現了高功率密度。例如,在新能源汽車(NEV)的主驅動逆變器中使用SiC MOSFET模組,可在有限的空間內實現更高的輸出功率,有助於打造更緊湊、更輕的車輛設計。其次,模組的內部佈局和連接經過精心設計,有效降低了漏感,並提高了系統的穩定性和可靠性。漏感會在開關過程中產生電壓尖峰,可能會影響裝置的正常運作。而SiC MOSFET模組透過精簡的佈局和佈線設計,有效緩解了這種影響。
新能源汽車產業的爆發式成長:新能源汽車市場的快速發展是推動SiC MOSFET晶片、裝置和模組市場成長的主要因素。隨著全球對排放減排和環境保護的日益重視,新能源汽車已成為汽車產業發展的主流趨勢。特別是800V高壓平台的廣泛應用,對功率元件提出了更高的性能要求。 SiC MOSFET具有低導通電阻、高開關頻率和高耐壓等優勢,是800V高壓平台主驅動逆變器的理想選擇。採用SiC MOSFET模組的主驅動逆變器可將新能源車的續航里程延長5-10%,並將充電時間縮短至15-20分鐘,大幅提升使用者體驗。例如,特斯拉率先在其Model 3和Model Y車型中採用SiC MOSFET模組。隨後,眾多汽車製造商紛紛效仿,推動了整個新能源汽車產業對SiC MOSFET需求的快速成長。
太陽能發電和儲能產業的快速發展:在太陽能發電領域,全球對可再生能源的需求持續成長,推動了太陽能發電裝置容量的持續成長。在太陽能逆變器中應用碳化矽(SiC)MOSFET可顯著提高逆變器的轉換效率並降低能量損耗。傳統的矽基IGBT逆變器的轉換效率通常在96%至98%之間,而採用SiC MOSFET的逆變器效率可超過99%,在相同的光照條件下產生更多功率。此外,SiC MOSFET的高頻特性使得逆變器中可以使用更小更輕的被動元件,例如感應器和電容器,從而降低系統成本。在儲能領域,隨著儲能市場的擴張,SiC MOSFET擴大應用於儲能轉換器(PCS)。這些應用提高了能源儲存系統的充放電效率,延長了電池壽命,並增強了系統的穩定性和可靠性。例如,在大規模儲能電廠計劃中,使用SiC MOSFET模組的儲能轉換器可實現98%以上的充放電效率,顯著提高能源儲存系統的經濟效益。
工業領域的節能與電力系統升級:包括馬達驅動裝置和電力轉換設備在內的各種工業設備迫切需要節能降耗。 SiC MOSFET的應用能夠顯著降低能耗,並提高生產效率。例如,在工業馬達驅動系統中以SiC MOSFET取代傳統的矽基元件,可使系統效率提高3-5%,從而實現可觀的年度節能。在電力系統領域,隨著智慧電網建設的推進,對電力電子裝置的性能和可靠性要求不斷提高。 SiC MOSFET有望在高壓直流輸電(HVDC)和軟性交流輸電(FACTS)系統等領域中廣泛應用,以滿足電力系統不斷變化的需求,例如提高輸電效率、增強系統穩定性和可控性、實現更高電壓、更大容量以及建立更智慧的系統。
本報告旨在按地區/國家、類型和應用對全球 SiC MOSFET 晶片(裝置)和模組市場進行全面分析,重點關注總銷售量、收入、價格、市場佔有率以及主要企業的排名。
本報告以2024年為基準年,按銷量(千件)和收入(百萬美元)對SiC MOSFET晶片(裝置)和模組的市場規模、估算和預測進行了呈現,並包含了2020年至2031年的歷史數據和預測數據。透過定量和定性分析,我們幫助讀者制定SiC MOSFET晶片(裝置)和模組的業務/成長策略,評估市場競爭,分析自身在當前市場中的地位,並做出明智的商業決策。
市場區隔
公司
按類型分類的細分市場
應用領域
按地區
The global market for SiC MOSFET Chips (Devices) and Module was estimated to be worth US$ 1054 million in 2024 and is forecast to a readjusted size of US$ 6153 million by 2031 with a CAGR of 26.6% during the forecast period 2025-2031.
This report provides a comprehensive assessment of recent tariff adjustments and international strategic countermeasures on SiC MOSFET Chips (Devices) and Module cross-border industrial footprints, capital allocation patterns, regional economic interdependencies, and supply chain reconfigurations.
SiC MOSFET chips, or silicon carbide metal-oxide-semiconductor field-effect transistor chips, are a new type of power semiconductor chip manufactured using silicon carbide (SiC) material. Compared to traditional silicon (Si) materials, SiC has a wide bandgap characteristic (bandgap width of approximately 3.26 eV, while silicon has 1.12 eV), which endows SiC MOSFET chips with a series of superior performance characteristics.
SiC MOSFET devices are complete semiconductor devices composed of SiC MOSFET chips as the core, along with necessary packaging materials, leads, etc. Packaging is critical for SiC MOSFET devices, as it not only provides physical protection for the chip, preventing mechanical damage and moisture corrosion, but also enables electrical connection between the chip and external circuits. Common packaging forms for SiC MOSFET devices include TO-247 and TO-220. Taking the TO-247 packaging as an example, it has excellent heat dissipation performance, enabling rapid dissipation of heat generated during chip operation, ensuring stable device operation in high-temperature environments.
SiC MOSFET modules integrate multiple SiC MOSFET devices and other auxiliary components such as diodes into a single power module through a specific circuit topology. This integrated design offers numerous advantages. On one hand, the optimized circuit connections between devices within the module enable higher power density. For example, in the main drive inverter of new energy vehicles, using SiC MOSFET modules can achieve higher power output within a limited space, contributing to the vehicle's miniaturization and lightweight design. On the other hand, the internal layout and connections of the module are carefully designed to effectively reduce stray inductance, thereby enhancing system stability and reliability. Stray inductance can generate voltage spikes during switching processes, affecting the normal operation of devices. However, SiC MOSFET modules mitigate this impact through rational layout and routing.
The explosive growth of the new energy vehicle industry: The rapid development of the new energy vehicle market is the key driver behind the growth of the SiC MOSFET chip, device, and module markets. As countries worldwide increasingly prioritize energy conservation, emissions reduction, and environmental protection, new energy vehicles have become the mainstream direction for automotive industry development. In particular, the widespread adoption of 800V high-voltage platforms has imposed higher performance requirements on power devices. SiC MOSFETs, with their advantages of low on-resistance, high switching frequency, and high voltage withstand capability, have become the ideal choice for main drive inverters in 800V high-voltage platforms. Main drive inverters using SiC MOSFET modules can increase the range of new energy vehicles by 5%-10% while reducing charging time to 15-20 minutes, significantly enhancing the user experience. For example, Tesla was the first to adopt SiC MOSFET modules in its Model 3 and Model Y vehicles, and many other automakers have since followed suit, driving rapid growth in demand for SiC MOSFETs across the entire new energy vehicle industry.
Rapid development of the photovoltaic and energy storage industries: In the photovoltaic sector, global demand for renewable energy continues to rise, driving sustained growth in photovoltaic power generation capacity. The application of SiC MOSFETs in photovoltaic inverters can significantly improve inverter conversion efficiency and reduce energy loss. Traditional silicon-based IGBT inverters typically achieve conversion efficiencies of 96%-98%, while inverters using SiC MOSFETs can exceed 99% efficiency, meaning they can generate more electricity under the same lighting conditions. Additionally, the high-frequency characteristics of SiC MOSFETs enable the reduction in size and weight of passive components such as inductors and capacitors within inverters, thereby lowering system costs. In the energy storage sector, as the energy storage market continues to expand, the application of SiC MOSFETs in energy storage converters (PCS) is becoming increasingly widespread. They enhance the charging and discharging efficiency of energy storage systems, extend battery lifespan, and improve system stability and reliability. For example, in some large-scale energy storage power plant projects, energy storage converters using SiC MOSFET modules can achieve charging and discharging efficiencies of over 98%, significantly improving the economic benefits of energy storage systems.
Industrial energy conservation and power system upgrade requirements: In the industrial sector, there is an urgent need for energy conservation and consumption reduction in various industrial equipment such as motor drives and power converters. The application of SiC MOSFETs can significantly reduce the energy consumption of industrial equipment and improve production efficiency. For example, in industrial motor drive systems, replacing traditional silicon-based devices with SiC MOSFETs can increase system efficiency by 3%-5%, saving a significant amount of electricity annually. In the power system sector, as smart grid construction progresses, the performance and reliability requirements for power electronic devices continue to rise. SiC MOSFETs hold broad application prospects in fields such as high-voltage direct current transmission (HVDC) and flexible alternating current transmission systems (FACTS). They can enhance power system transmission efficiency, strengthen grid stability and controllability, and meet the evolving demands of power systems toward higher voltages, larger capacities, and greater intelligence.
This report aims to provide a comprehensive presentation of the global market for SiC MOSFET Chips (Devices) and Module, focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of SiC MOSFET Chips (Devices) and Module by region & country, by Type, and by Application.
The SiC MOSFET Chips (Devices) and Module market size, estimations, and forecasts are provided in terms of sales volume (K Units) and sales revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding SiC MOSFET Chips (Devices) and Module.
Market Segmentation
By Company
Segment by Type
Segment by Application
By Region
Chapter Outline
Chapter 1: Introduces the report scope of the report, global total market size (value, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of SiC MOSFET Chips (Devices) and Module manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of SiC MOSFET Chips (Devices) and Module in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of SiC MOSFET Chips (Devices) and Module in country level. It provides sigmate data by Type, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.