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市場調查報告書
商品編碼
1868070
MRAM:全球市場佔有率和排名、總收入和需求預測(2025-2031 年)MRAM - Global Market Share and Ranking, Overall Sales and Demand Forecast 2025-2031 |
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2024 年全球 MRAM 市場規模估計為 2.5 億美元,預計在 2025 年至 2031 年的預測期內將以 23.3% 的複合年成長率成長,到 2031 年將調整至 11.35 億美元。
本報告全面評估了近期關稅調整和國際戰略反制措施對MRAM跨境產業基礎、資本配置模式、區域經濟相互依存關係和供應鏈重組的影響。
磁阻隨機存取記憶體(MRAM)是一種基於磁阻效應的非揮發性儲存技術,其核心單元為磁隧道接點(MTJ)。 MTJ由兩層鐵磁層夾在中間的絕緣隧道勢壘層所構成。透過控制自由層和釘扎層的磁化方向平行或反平行,MTJ可以呈現低阻狀態(邏輯0)或高阻狀態(邏輯1),從而實現資料儲存。
MRAM的技術發展經歷了三代:
第一代:磁驅動型MRAM。寫入資料時需要外部磁場,效率相對較低。
第二代:自旋轉移力矩磁隨機存取記憶體(STT-MRAM),利用垂直於磁隧道接面的電流來翻轉磁矩,其速度接近SRAM,耐久性超過10^15次循環,目前已實現大規模商業性生產。
第三代:自旋軌道力矩磁阻隨機存取記憶體(SOT-MRAM)和電壓調節器異向性隨機存取記憶體(VCMA-MRAM)。其中,SOT-MRAM利用面內電流產生自旋軌道力矩並反轉磁矩,寫入速度可達0.4奈秒,功耗僅為STT-MRAM的1%,並支援記憶體內運算。預計它將成為下一代主流技術。
與傳統儲存方式相比:
DRAM:易失性,需持續供電。 MRAM 可以取代 DRAM 作為非揮發性快取。
NAND快閃記憶體:寫入速度慢(微秒級)且耐久性低;MRAM在即時資料儲存場景中具有優勢。
SRAM:速度快,但密度低,功耗高。 MRAM 則在效能和成本之間取得了良好的平衡,更適合嵌入式應用。
技術突破:
SOT-MRAM的商業化:台積電和工程院共同開發的SOT-MRAM寫入速度僅0.4奈秒,功耗降低99%,目前正處於車規級檢驗階段。東北大學開發的SOT-MRAM寫入功耗低至156飛焦耳,是目前全球最低的寫入功耗。
記憶體內運算整合:台積電將 SOT-MRAM 與運算架構整合,實現了直接記憶體內運算,能源效率提高了 10 倍以上,使其適用於 AI 邊緣運算。
材料創新:石墨烯磁性複合材料可將讀寫速度提高 50%,功耗降低 30%。3D堆疊技術將裝置尺寸縮小至奈米級,顯著提高了密度。
市場促進因素:
新興應用需求:
人工智慧和邊緣運算:MRAM 的低功耗和高速特性使其成為人工智慧推理晶片的理想選擇。例如,阿里巴巴的嵌入式 MRAM 人工智慧晶片 PingTouGe,功耗降低了 62%。
物聯網設備:預計到 2030 年,全球物聯網設備數量將超過 5,000 億,MRAM 的非揮發性和耐用性滿足了感測器節點的要求。
政策支持:中國的「十四五」規劃將MRAM定位為一項關鍵的新型儲存技術。國家積體電路產業投資基金第二期撥款35億元支持供應鏈發展,並在北京、上海等地設立了三個國家級研發中心。
挑戰與衝突:
成本與製程:MRAM 的單位成本是 DRAM 的 35 倍。降低成本需要大規模生產(例如合肥昌鑫的 28nm 生產線)和國內材料生產(目前 75% 的鈷、鐵和硼靶材依賴進口)。
技術競爭:ReRAM 在記憶體運算領域發展迅速(例如,信玄半導體的車規級產品),FeRAM 也正在向汽車電子領域拓展。然而,MRAM 在速度和耐久性方面仍然具有優勢。
標準與生態系統:JEDEC 發布了 SOT-MRAM 介面標準 JESD232,預計到 2025 年將形成一個完整的系統,並將促進供應商之間的兼容性。
本報告旨在按地區/國家、類型和應用程式對全球 MRAM 市場進行全面分析,重點關注總銷售量、收入、價格、市場佔有率和主要企業的排名。
本報告以銷售量(千台)和收入(百萬美元)為單位,提供MRAM市場規模、估算和預測,基準年為2024年,並包含2020年至2031年期間的歷史數據和預測數據。定量和定性分析相結合,有助於讀者制定業務和成長策略,評估市場競爭,分析自身在當前市場中的地位,並就MRAM做出明智的商業決策。
市場區隔
公司
按類型分類的細分市場
應用領域
按地區
The global market for MRAM was estimated to be worth US$ 250 million in 2024 and is forecast to a readjusted size of US$ 1135 million by 2031 with a CAGR of 23.3% during the forecast period 2025-2031.
This report provides a comprehensive assessment of recent tariff adjustments and international strategic countermeasures on MRAM cross-border industrial footprints, capital allocation patterns, regional economic interdependencies, and supply chain reconfigurations.
Magnetoresistive Random Access Memory (MRAM) is a non-volatile storage technology based on the magnetoresistive effect, with its core unit being a magnetic tunnel junction (MTJ), composed of two ferromagnetic layers sandwiching an insulating tunnel barrier layer. By controlling the magnetization direction of the free layer and the fixed layer to be parallel or antiparallel, the MTJ exhibits a low-resistance state (logic 0) or a high-resistance state (logic 1), thereby enabling data storage.
The technological evolution of MRAM has undergone three generations:
First generation: Magnetically driven MRAM, which requires an external magnetic field for writing and has relatively low efficiency.
Second generation: Spin-transfer torque MRAM (STT-MRAM), which flips the magnetic moment using a current perpendicular to the MTJ, has been commercially mass-produced, with speeds approaching SRAM and durability exceeding 1E15 cycles.
Third generation: Spin-orbit torque MRAM (SOT-MRAM) and voltage-controlled magnetic anisotropy MRAM (VCMA-MRAM). Among these, SOT-MRAM uses in-plane current to generate spin-orbit torque to flip the magnetic moment, achieving write speeds of up to 0.4 nanoseconds, with power consumption only 1% of STT-MRAM, and supports in-memory computing, making it the next-generation mainstream technology.
Comparison with traditional storage:
DRAM: Volatile, requires continuous power supply; MRAM can replace it as non-volatile cache.
NAND flash: Slow write speed (microseconds), low durability; MRAM has advantages in real-time data storage scenarios.
SRAM: Fast but low density and high power consumption; MRAM balances performance and cost in embedded applications.
Technological breakthroughs:
SOT-MRAM commercialization: TSMC and ITRI have developed SOT-MRAM with a write speed of 0.4 nanoseconds and a 99% reduction in power consumption, which has entered the automotive-grade verification phase. SOT-MRAM developed by Tohoku University in Japan has a write power consumption as low as 156 fJ, the lowest in the world.
In-memory computing integration: TSMC combines SOT-MRAM with computing architecture to enable direct in-memory computing, improving energy efficiency by over 10 times, suitable for AI edge computing.
Material innovation: Graphene magnetic composite materials increase read/write speeds by 50% and reduce power consumption by 30%; three-dimensional stacked structures reduce device sizes to the nanometer level, significantly increasing density.
Market drivers:
Emerging application demands:
AI and edge computing: MRAM's low power consumption and high-speed characteristics are well-suited for AI inference chips. For example, Alibaba's PingTouGe AI chip with integrated MRAM reduces power consumption by 62%.
IoT Devices: Global IoT devices are projected to exceed 500 billion units by 2030, with MRAM's non-volatility and durability meeting sensor node requirements.
Policy Support: China's 14th Five-Year Plan prioritizes MRAM as the leading new storage technology, with the second phase of the National Integrated Circuit Industry Investment Fund allocating 3.5 billion yuan to support supply chain development, and three national-level R&D centers established in Beijing, Shanghai, and other regions.
Challenges and competition:
Cost and process: The unit cost of MRAM is 35 times that of DRAM. Cost reduction requires large-scale production (e.g., Hefei Changxin's 28nm production line) and domestic material production (cobalt-iron-boron target materials currently have a 75% import dependency).
Technological Competition: ReRAM is making rapid progress in the field of compute-in-memory (e.g., XinYuan Semiconductor's automotive-grade products), and FeRAM is increasing its penetration in automotive electronics. However, MRAM still holds advantages in terms of speed and durability.
Standards and Ecosystem: JEDEC has released the SOT-MRAM interface standard JESD232, with a complete system expected to be established by 2025, promoting cross-vendor compatibility.
This report aims to provide a comprehensive presentation of the global market for MRAM, focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of MRAM by region & country, by Type, and by Application.
The MRAM market size, estimations, and forecasts are provided in terms of sales volume (K Units) and sales revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding MRAM.
Market Segmentation
By Company
Segment by Type
Segment by Application
By Region
Chapter Outline
Chapter 1: Introduces the report scope of the report, global total market size (value, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of MRAM manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of MRAM in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of MRAM in country level. It provides sigmate data by Type, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.