電晶體：市場佔有率分析、產業趨勢和統計數據、成長預測（2026-2031）

根據 Mordor Intelligence 估計，到 2026 年電晶體市場規模將達到 200.2 億美元，高於 2025 年的 186.3 億美元，預計到 2031 年將達到 286.6 億美元。

預計從 2026 年到 2031 年，其複合年成長率將達到 7.46%。

本報告按電晶體類型（例如，雙極接面電晶體 (BJT)）、材料（例如，矽 (Si)）、製程節點（例如，65 奈米或更大）、封裝類型（例如，通孔封裝、表面黏著技術）、終端用戶產業（例如，家用電子電器、資訊與通訊技術 (ICT)）以及地區進行細分。市場預測以美元 (USD) 為單位。

全球電晶體市場趨勢與洞察

低功耗行動SoC需求激增

行動系統晶片(SoC) 供應商正在增加電晶體數量，以整合人工智慧加速器，從而在不耗盡電池電量的情況下在設備上執行推理任務。晶片結構正在融合高效能邏輯和針對低於 10 mW 待機功耗最佳化的類比模組，採購標準也正從單價轉向「每次操作的焦耳數」。台積電的 3nm 生產線計劃於 2025 年開始量產，主要用於智慧型手機 SoC，這表明製程節點升級仍根植於行動工作負載。異質整合正在推動晶圓層次電子構裝的普及，因為設計人員可以將神經網路處理核心和電源管理電路放置在單個晶圓上。儘管全球智慧型手機出貨量已趨於平穩，但每個設備矽晶圓用量的增加正在維持電晶體市場的整體收入成長。

交通運輸和充電基礎設施的快速電氣化

電動車使用的半導體數量大約是內燃機汽車的10倍，其中大部分是用於控制牽引逆變器、車載充電器和DC-DC轉換器的大電流電晶體。產業從400V系統轉變為800V系統的轉變已經超出了矽元件的安全工作範圍，促使汽車製造商指定使用額定電壓為1200V的SiC MOSFET和IGBT模組。東芝新建的300毫米製造工廠旨在將其汽車功率半導體的產量提高三倍，這表明供應商正在積極響應這一長期商機。公共快速充電樁的普及化也進一步推動了這一趨勢，因為每個充電站都包含多個IGBT堆疊和閘極驅動器。符合AEC-Q100標準需要長達兩年的設計週期，這導致需求預測與供應之間存在持續的差距，從而支撐了穩健的價格。

3 nm 以下節點處的量子穿隧極限

在3奈米以下的微結構中，由於量子穿隧效應，會出現不可接受的漏電流，從而削弱了迄今為止支撐節點小型化的能耗和延遲優勢。環柵（GAA）奈米片電晶體可以部分降低靜電損耗，但需要複雜的圖形化製程和高成本的極紫外線（EUV）多重圖形化製程。因此，代工廠不再追求純粹的微影術小型化，而是透過將逐步縮短閘極長度與系統級創新（例如3D堆疊和晶片組）相結合，來擴展其性能藍圖。目前，3奈米以下製程的單套遮罩成本超過1,000萬美元，這意味著只有產量最高的消費級和雲端處理器才能攤提模具成本。

細分市場分析

預計2026年至2031年，全球IGBT銷售額將以8.66%的複合年成長率成長，超過電晶體市場整體成長速度，這主要得益於電動車和可再生能源逆變器對高效能開關元件的需求。傳統的BJT電晶體在2025年仍將佔據電晶體市場48.35%的佔有率，主要滿足注重成本的消費者和工業設計需求，這些應用對開關速度或耐壓要求不高。供應商正利用晶圓級封裝技術，在保持開關損耗競爭力的同時，將IGBT的額定電流提升至1000A以上。

包括ISO 26262在內的汽車安全標準，透過強制執行更長的任務剖面測試，提高了准入門檻，這支撐了高階產品的價格，並強化了業界適度集中的格局。 Nexperia在GaN和SiC製程方面投資2億美元，這與客戶尋求超越矽IGBT結構耐久性極限的替代材料的藍圖相契合。儘管場效電晶體（FET）在邏輯應用中仍然至關重要，但由於製程節點小型化速度放緩以及智慧型手機和PC中分立元件的使用量趨於穩定，其市場佔有率成長緩慢。

儘管矽電晶體在2025年仍保持著68.85%的市場佔有率，但預計到2031年，碳化矽裝置將以8.86%的複合年成長率（CAGR）實現最高成長，因為牽引逆變器、太陽能逆變器和工業驅動器正朝著1200V設計發展，而降低開關損耗在這些應用中耗在這些驅動器正朝著1200V設計發展，而降低到這些開關耗在這些應用程式中都耗在這些驅動器正朝著1200V設計發展，而降低到這些開關耗在這些應用程式中都耗在這些驅動器正朝著1200V設計發展，而降低到這些開關耗在這些應用程式中都耗在這些驅動器正朝著1200V設計發展，而降低到這些開關耗在這些應用程式中消耗至關重要。氮化鎵在射頻和快速充電器功率級的細分市場正在擴張，但基板成本和晶圓良率仍然是其大規模應用的障礙。

政府獎勵，例如《晶片法案》（CHIPS Act）下針對碳化矽（SiC）試點生產線的專項津貼，降低了國內晶圓廠的初始成本，並縮短了晶體生長投資的回收期。然而，寬能隙材料的晶圓良率比矽低20-30個百分點，推高了晶圓成本，因此其應用僅限於性能優勢足以抵銷更高成本的應用領域。實驗室對碳化矽結型場效電晶體（JFET）音頻放大器的演示表明，其應用範圍已擴展到功率轉換之外，這為寬能隙材料供應商未來的多元化發展指明了方向。

區域分析

預計到2025年，亞太地區將佔全球銷售額的55.90%，並將在2031年之前維持10.62%的複合年成長率。儘管中國國內晶圓代工廠正在響應政策要求，擴大其28奈米和14奈米生產線，但最尖端科技的供應限制導致企業更多地從台灣和韓國的晶圓廠採購。印度的生產連結獎勵計畫計畫促使多家外包半導體製造（OSAT）公司宣佈進駐，但物流和熟練勞動力短缺仍限制了短期產量。日本在光阻劑、矽晶圓和沈積設備的供應方面仍然扮演著重要角色，儘管晶圓廠產能有限，但仍在電晶體市場佔有一席之地。隨著跨國公司將生產重點從中國沿海地區轉移出去，越南和馬來西亞等新興東南亞地區正成為第二供應商的選擇。

北美正受益於雲端資料中心的擴張、電動車組裝生產的成長以及國防項目優先考慮國內採購的需求。根據《晶片法案》（CHIPS Act），520億美元的預算撥款使得台積電、三星和英特爾等公司得以投資建設多個晶圓廠，從而提高了長期供應穩定性。在加拿大，對5G基礎設施和純電動公車的重視刺激了對射頻和高功率裝置的特殊需求。同時，墨西哥靠近美國邊境的電子製造服務（EMS）叢集正在吸引為汽車行業一級供應商服務的電晶體組裝線。強調供應鏈韌性的區域政策支撐了價格溢價，部分抵消了不斷上漲的人事費用和建設成本。

歐洲電晶體市場的發展主要受德國向電動車轉型、法國航太航太業以及旨在懲罰低效電源轉換的全部區域「綠色新政」的推動。德國原始設備製造商 (OEM) 正在獨家採購碳化矽 (SiC) 裝置，以確保其逆變器藍圖的穩定性；而法國的國防計劃則指定使用抗輻射電晶體，以應對嚴酷的宇宙射線環境。歐洲晶片聯合營業單位)正在資助先進製程節點的試點生產線，目標有兩個：策略性自給自足和減少可衡量的碳足跡。英國脫歐相關的貿易緊張局勢促使英國OEM 從歐洲大陸的外包半導體組裝測試 (OSAT) 廠商採購組件，這為比荷盧經濟聯盟地區的本地供應商創造了擴大市場佔有率的機會。

其他好處：

• Excel格式的市場預測（ME）表
• 3個月的分析師支持

目錄

第1章：引言

• 研究假設和市場定義
• 調查範圍

第2章：調查方法

第3章執行摘要

第4章 市場狀況

• 市場概覽
• 市場促進因素
  • 市場對低功耗行動SoC的需求正在激增。
  • 交通途徑和充電基礎設施的快速電氣化
  • 邊緣端的 AI/ML 推理正在推動對獨立功率裝置的需求。
  • 從 5G 到 6G 的射頻前端升級
  • 政府對寬能隙材料（SiC、GaN）的激勵措施
  • 採用先進封裝技術（晶片封裝、3D堆疊）
• 市場限制因素
  • 3 nm 下列節點處的量子穿隧效應所帶來的限制
  • 供應鏈集中在台灣及中國南方
  • 由於勞動力短缺，對製造設施的投資增加
  • 汽車設備認證成本高昂
• 產業供應鏈分析
• 監理情勢
• 技術展望
• 波特五力分析

第5章 市場規模與成長預測

• 依電晶體類型
  • 雙極電晶體（BJT）
  • 場效電晶體（FET）
  • 絕緣柵雙極型電晶體（IGBT）
  • 異質接面雙極電晶體 (HBT)
• 材料
  • 矽（Si）
  • 碳化矽（SiC）
  • 氮化鎵（GaN）
  • 鍺（Ge）
• 依技術節點
  • 65奈米或以上
  • 45～28 nm
  • 22～16 nm
  • 14～10 nm
  • 小於10奈米
• 按包裝類型
  • 通孔
  • 表面黏著技術型
  • 晶片級封裝（CSP）
  • 晶圓級封裝（WLP）
• 按最終用戶行業分類
  • 家用電子產品
  • ICT
  • 汽車和運輸業
  • 工業製造
  • 能源與電力
  • 航太/國防
  • 醫療保健和醫療設備
• 按地區
  • 北美洲
    • 美國
    • 加拿大
    • 墨西哥
  • 南美洲
    • 巴西
    • 阿根廷
    • 哥倫比亞
    • 其他南美國家
  • 歐洲
    • 英國
    • 德國
    • 法國
    • 義大利
    • 西班牙
    • 其他歐洲國家
  • 亞太地區
    • 中國
    • 日本
    • 韓國
    • 印度
    • 其他亞太國家
  • 中東和非洲
    • 中東
      • 沙烏地阿拉伯
      • 阿拉伯聯合大公國
      • 其他中東國家
    • 非洲
      • 南非
      • 埃及
      • 其他非洲國家

第6章 競爭情勢

• 市場集中度
• 策略趨勢
• 市佔率分析
• 公司簡介
  • onsemi Corporation
  • Infineon Technologies AG
  • STMicroelectronics NV
  • Texas Instruments Incorporated
  • Vishay Intertechnology, Inc.
  • Diodes Incorporated
  • NXP Semiconductors NV
  • Renesas Electronics Corporation
  • Linear Integrated Systems, Inc.
  • ROHM Co., Ltd.
  • Toshiba Electronic Devices and Storage Corporation
  • Microchip Technology Inc.
  • Broadcom Inc.
  • Samsung Electronics Co., Ltd.
  • Fuji Electric Co., Ltd.
  • Mitsubishi Electric Corporation
  • Alpha and Omega Semiconductor Limited
  • Qorvo, Inc.
  • Wolfspeed, Inc.
  • Analog Devices, Inc.

第7章 市場機會與未來展望

According to Mordor Intelligence, the transistor market size in 2026 is estimated at USD 20.02 billion, growing from 2025 value of USD 18.63 billion with 2031 projections showing USD 28.66 billion, growing at 7.46% CAGR over 2026-2031.

This report is Segmented by Transistor Type (Bipolar Junction Transistors (BJT), and More), Material (Silicon (Si), and More), Technology Node (Greater Than Equal To 65 Nm, and More), Packaging Type (Through-Hole, Surface-Mount, and More), End-User Industry (Consumer Electronics, Information and Communication Technology, and More), and Geography. The Market Forecasts are Provided in Terms of Value (USD).

Global Transistor Market Trends and Insights

Surging Demand for Power-Efficient Mobile SoCs

Mobile system-on-chip suppliers are lengthening transistor counts to integrate AI accelerators that execute on-device inference tasks without draining batteries. Chip architectures blend high-performance logic with analog blocks optimized for standby below 10 mW, shifting purchasing criteria from unit price to joules-per-operation. TSMC's 3 nm production lines entered mass production during 2025 mainly to serve smartphone SoCs, underscoring how node migration remains anchored in mobility workloads. Heterogeneous integration is reinforcing wafer-level packaging adoption as designers co-locate neural-processing cores and power-management circuitry on a single substrate. Although global smartphone shipments plateaued, rising silicon per handset is sustaining revenue growth across the transistor market.

Rapid Electrification of Transportation and Charging Infrastructure

Electric vehicles embed roughly 10 times more semiconductors than combustion models, most of which are high-current transistors handling traction inverters, on-board chargers, and DC-DC converters. The industry shift from 400 V to 800 V systems exceeds the safe-operating area of silicon devices, prompting automakers to specify SiC MOSFETs and IGBT modules rated at 1,200 V. Toshiba's new 300 mm facility aims to triple automotive-grade power semiconductor output, illustrating supplier responses to this long-cycle opportunity. Public fast-charger rollouts add further upside, as each station integrates multiple IGBT stacks and gate drivers. Qualification to AEC-Q100 extends design cycles by up to two years, creating a persistent gap between demand visibility and supply availability that underpins healthy pricing.

Quantum-Tunneling Limits Below 3 nm Nodes

Sub-3 nm geometries experience prohibitive leakage due to quantum tunneling, eroding the energy-delay benefit that historically justified node shrinks. Gate-all-around nanosheet transistors partially mitigate electrostatic loss yet demand intricate patterning sequences and expensive EUV multi-patterning steps. Foundries are therefore combining modest gate-length reductions with system-level innovations such as 3D stacking and chiplets to extend performance roadmaps rather than chasing pure lithographic scaling. The cost of a single sub-3 nm mask set now exceeds USD 10 million, meaning only the highest-volume consumer and cloud processors can amortize tooling expenses.

Other drivers and restraints analyzed in the detailed report include:

1. AI/ML Inference at the Edge Driving Discrete Power Devices
2. 5G-to-6G RF Front-End Upgrades
3. Supply-Chain Concentration in Taiwan and South China

For complete list of drivers and restraints, kindly check the Table Of Contents.

Segment Analysis

Global IGBT revenue is projected to advance at 8.66% CAGR between 2026 and 2031, outpacing overall transistor market growth as e-mobility and renewable inverters demand high-efficiency switching components. The legacy BJT category retained 48.35% share of the transistor market size in 2025 by serving cost-sensitive consumer and industrial designs that do not need fast switching or extreme voltage tolerance. Suppliers are leveraging wafer-level packages to drive IGBT current ratings beyond 1,000 A while keeping switching loss at competitive levels.

Automotive safety standards, including ISO 26262, elevate barriers to entry by mandating extended mission-profile testing, a factor that supports premium pricing and reinforces moderate industry concentration. Nexperia's USD 200 million expansion into GaN and SiC processes aligns with customer roadmaps seeking alternative materials that can surpass the ruggedness limits of silicon IGBT structures. Field-effect transistors remain indispensable in logic applications, but their share gains are modest as node scaling slows and discrete counts plateau in smartphones and PCs.

Silicon kept 68.85% of the 2025 transistor market share, yet silicon-carbide devices are forecast to log the highest 8.86% CAGR to 2031 as traction inverters, solar inverters, and industrial drives transition to 1,200 V designs that reward lower switching loss. Gallium-nitride's niche in RF and fast-charger power stages is expanding, although substrate cost and wafer yield remain hurdles to mass penetration.

Government incentives, such as dedicated CHIPS Act grants for SiC pilot lines, ease upfront costs for domestic fabs and shorten the payback period on crystal-growth investments. Still, wide-bandgap wafer yields trail silicon by 20-30 percentage points, inflating die cost and confining adoption to applications where performance benefits justify premiums. Lab demonstrations of SiC JFET audio amplifiers highlight the broadening scope beyond power conversion, signaling future diversification paths for wide-bandgap suppliers.

Complete Report Scope:

• By Transistor Type
  • Bipolar Junction Transistors (BJT)
  • Field Effect Transistors (FET)
  • Insulated Gate Bipolar Transistors (IGBT)
  • Heterojunction Bipolar Transistors (HBT)
• By Material
  • Silicon (Si)
  • Silicon Carbide (SiC)
  • Gallium Nitride (GaN)
  • Germanium (Ge)
• By Technology Node
  • Greater than Equal to 65 nm
  • 45 - 28 nm
  • 22 - 16 nm
  • 14 - 10 nm
  • Less than 10 nm
• By Packaging Type
  • Through-Hole
  • Surface-Mount
  • Chip-Scale Package (CSP)
  • Wafer-Level Package (WLP)
• By End-User Industry
  • Consumer Electronics
  • Information and Communication Technology
  • Automotive and Transportation
  • Industrial Manufacturing
  • Energy and Power
  • Aerospace and Defense
  • Healthcare and Medical Devices
• By Geography
  • North America
    • United States
    • Canada
    • Mexico
  • South America
    • Brazil
    • Argentina
    • Colombia
    • Rest of South America
  • Europe
    • United Kingdom
    • Germany
    • France
    • Italy
    • Spain
    • Rest of Europe
  • Asia-Pacific
    • China
    • Japan
    • South Korea
    • India
    • Rest of Asia-Pacific
  • Middle East and Africa
    • Middle East
      • Saudi Arabia
      • United Arab Emirates
      • Rest of Middle East
    • Africa
      • South Africa
      • Egypt
      • Rest of Africa

Geography Analysis

Asia-Pacific contributed 55.90% revenue in 2025 and is forecast to record a 10.62% CAGR to 2031. China's domestic foundries are scaling 28 nm and 14 nm lines under policy mandates, yet leading-edge constraints drive procurement from Taiwanese and South Korean fabs. India's production-linked incentive program has attracted multiple OSAT announcements, but logistics and skilled-labor gaps still temper near-term output. Japan maintains a critical role in photoresist, silicon-wafer, and deposition-tool supply, cushioning its transistor market relevance despite limited wafer-fab capacity. Emerging Southeast-Asian hubs such as Vietnam and Malaysia gain as second-source alternatives when multinationals diversify away from coastal China.

North America benefits from cloud-data-center expansion, electric-vehicle assembly growth, and defense-program mandates that prioritize domestic sourcing. The CHIPS Act's USD 52 billion allocation has unlocked multi-fab investments by TSMC, Samsung, and Intel, improving long-term supply security. Canada's focus on 5G infrastructure and battery-electric buses spurs specialized demand for RF and high-power devices, while Mexico's EMS clusters near the U.S. border attract transistor assembly lines that service automotive Tier-1 suppliers. Regional policy emphasis on supply-chain resilience supports a price premium that partially offsets elevated labor and construction costs.

Europe's transistor market gravitates around Germany's e-mobility shift, France's aerospace sector and the region-wide Green Deal that penalizes inefficient power conversion. Germany's OEMs are solo-sourcing SiC devices to stabilize inverter roadmaps, while French defense programs specify radiation-hardened transistors that endure harsh cosmic-ray environments. The European Chips Joint Undertaking funds advanced-node pilot lines with a dual objective: strategic autonomy and measurable carbon-footprint reduction. Brexit-related trade frictions prompt British OEMs to dual-source assemblies from continental OSATs, creating share opportunities for local suppliers in the Benelux corridor.

1. onsemi Corporation
2. Infineon Technologies AG
3. STMicroelectronics N.V.
4. Texas Instruments Incorporated
5. Vishay Intertechnology, Inc.
6. Diodes Incorporated
7. NXP Semiconductors N.V.
8. Renesas Electronics Corporation
9. Linear Integrated Systems, Inc.
10. ROHM Co., Ltd.
11. Toshiba Electronic Devices and Storage Corporation
12. Microchip Technology Inc.
13. Broadcom Inc.
14. Samsung Electronics Co., Ltd.
15. Fuji Electric Co., Ltd.
16. Mitsubishi Electric Corporation
17. Alpha and Omega Semiconductor Limited
18. Qorvo, Inc.
19. Wolfspeed, Inc.
20. Analog Devices, Inc.

Additional Benefits:

• The market estimate (ME) sheet in Excel format
• 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

• 1.1 Study Assumptions and Market Definition
• 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE

• 4.1 Market Overview
• 4.2 Market Drivers
  • 4.2.1 Surging demand for power-efficient mobile SoCs
  • 4.2.2 Rapid electrification of transportation and charging infrastructure
  • 4.2.3 AI/ML inference at the edge driving discrete power devices
  • 4.2.4 5G?to-6G RF front-end upgrades
  • 4.2.5 Government incentives for wide-band-gap fabs (SiC, GaN)
  • 4.2.6 Adoption of advanced packaging (chip-let, 3D stacking)
• 4.3 Market Restraints
  • 4.3.1 Quantum-tunnelling limits below 3 nm nodes
  • 4.3.2 Supply-chain concentration in Taiwan and South-China
  • 4.3.3 Rising fab construction CAPEX amid talent shortages
  • 4.3.4 High qualification cost for automotive-grade devices
• 4.4 Industry Supply Chain Analysis
• 4.5 Regulatory Landscape
• 4.6 Technological Outlook
• 4.7 Porter's Five Forces Analysis
  • 4.7.1 Threat of New Entrants
  • 4.7.2 Bargaining Power of Buyers
  • 4.7.3 Bargaining Power of Suppliers
  • 4.7.4 Threat of Substitute Products
  • 4.7.5 Intensity of Competitive Rivalry

5 MARKET SIZE AND GROWTH FORECASTS (VALUE)

• 5.1 By Transistor Type
  • 5.1.1 Bipolar Junction Transistors (BJT)
  • 5.1.2 Field Effect Transistors (FET)
  • 5.1.3 Insulated Gate Bipolar Transistors (IGBT)
  • 5.1.4 Heterojunction Bipolar Transistors (HBT)
• 5.2 By Material
  • 5.2.1 Silicon (Si)
  • 5.2.2 Silicon Carbide (SiC)
  • 5.2.3 Gallium Nitride (GaN)
  • 5.2.4 Germanium (Ge)
• 5.3 By Technology Node
  • 5.3.1 Greater than Equal to 65 nm
  • 5.3.2 45 - 28 nm
  • 5.3.3 22 - 16 nm
  • 5.3.4 14 - 10 nm
  • 5.3.5 Less than 10 nm
• 5.4 By Packaging Type
  • 5.4.1 Through-Hole
  • 5.4.2 Surface-Mount
  • 5.4.3 Chip-Scale Package (CSP)
  • 5.4.4 Wafer-Level Package (WLP)
• 5.5 By End-User Industry
  • 5.5.1 Consumer Electronics
  • 5.5.2 Information and Communication Technology
  • 5.5.3 Automotive and Transportation
  • 5.5.4 Industrial Manufacturing
  • 5.5.5 Energy and Power
  • 5.5.6 Aerospace and Defense
  • 5.5.7 Healthcare and Medical Devices
• 5.6 By Geography
  • 5.6.1 North America
    • 5.6.1.1 United States
    • 5.6.1.2 Canada
    • 5.6.1.3 Mexico
  • 5.6.2 South America
    • 5.6.2.1 Brazil
    • 5.6.2.2 Argentina
    • 5.6.2.3 Colombia
    • 5.6.2.4 Rest of South America
  • 5.6.3 Europe
    • 5.6.3.1 United Kingdom
    • 5.6.3.2 Germany
    • 5.6.3.3 France
    • 5.6.3.4 Italy
    • 5.6.3.5 Spain
    • 5.6.3.6 Rest of Europe
  • 5.6.4 Asia-Pacific
    • 5.6.4.1 China
    • 5.6.4.2 Japan
    • 5.6.4.3 South Korea
    • 5.6.4.4 India
    • 5.6.4.5 Rest of Asia-Pacific
  • 5.6.5 Middle East and Africa
    • 5.6.5.1 Middle East
      • 5.6.5.1.1 Saudi Arabia
      • 5.6.5.1.2 United Arab Emirates
      • 5.6.5.1.3 Rest of Middle East
    • 5.6.5.2 Africa
      • 5.6.5.2.1 South Africa
      • 5.6.5.2.2 Egypt
      • 5.6.5.2.3 Rest of Africa

6 COMPETITIVE LANDSCAPE

• 6.1 Market Concentration
• 6.2 Strategic Moves
• 6.3 Market Share Analysis
• 6.4 Company Profiles (includes Global level Overview, Market level overview, Core Segments, Financials as available, Strategic Information, Market Rank/Share for key companies, Products and Services, and Recent Developments)
  • 6.4.1 onsemi Corporation
  • 6.4.2 Infineon Technologies AG
  • 6.4.3 STMicroelectronics N.V.
  • 6.4.4 Texas Instruments Incorporated
  • 6.4.5 Vishay Intertechnology, Inc.
  • 6.4.6 Diodes Incorporated
  • 6.4.7 NXP Semiconductors N.V.
  • 6.4.8 Renesas Electronics Corporation
  • 6.4.9 Linear Integrated Systems, Inc.
  • 6.4.10 ROHM Co., Ltd.
  • 6.4.11 Toshiba Electronic Devices and Storage Corporation
  • 6.4.12 Microchip Technology Inc.
  • 6.4.13 Broadcom Inc.
  • 6.4.14 Samsung Electronics Co., Ltd.
  • 6.4.15 Fuji Electric Co., Ltd.
  • 6.4.16 Mitsubishi Electric Corporation
  • 6.4.17 Alpha and Omega Semiconductor Limited
  • 6.4.18 Qorvo, Inc.
  • 6.4.19 Wolfspeed, Inc.
  • 6.4.20 Analog Devices, Inc.

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK

• 7.1 White-Space and Unmet-Need Assessment