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1851584

動態隨機存取記憶體（DRAM）：市場佔有率分析、產業趨勢與成長預測（2025-2030 年）

Dynamic Random Access Memory (DRAM) - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2025 - 2030)
出版日期: | 出版商: Mordor Intelligence | 英文 120 Pages | 商品交期: 2-3個工作天內

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簡介目錄

預計到 2025 年，動態隨機存取記憶體 (DRAM) 市場規模將達到 1,086.8 億美元，到 2030 年將達到 2,329.7 億美元，複合年成長率為 16.47%。

動態隨機存取記憶體 (DRAM) - 市場 - 圖1

人工智慧伺服器的加速普及、高頻寬記憶體的快速成長以及日益嚴格的汽車認證要求，正促使採購標準從單純追求容量轉向兼顧頻寬、功耗和散熱性能。超大規模雲端營運商在2024年開始用DDR5和HBM3E模組更新其機架，而亞洲行動電話OEM廠商則將其大部分旗艦和中端產品組合遷移到LPDDR5X，並在2025年中期之前保持了95%以上的工廠使用率。隨著分區架構取代傳統的ECU網路，電動車的記憶體容量迅速成長，推動汽車DRAM需求進入多GB等級。同時，HBM3E產品線和傳統DDR4產品線之間的供應分配競爭引發了價格上漲，並重塑了PC、智慧型手機和工業IoT闆卡的性價比格局。

全球動態隨機存取記憶體（DRAM）市場趨勢與洞察

人工智慧和生成式人工智慧工作負載在超大規模資料中心的內容足跡不斷擴大

NVIDIA 的 2025 年 Blackwell GP-AI 平台建立了超越傳統 DDR 架構的頻寬基準，將伺服器平均記憶體容量從 2024 年的 256GB 提升至 2025 年年中的數Terabyte部署。隨著每個 HBM3E 堆疊的吞吐量超過 1TB/s，雲端營運商圍繞著以記憶體為中心的拓撲結構重新設計了機架。三星交付了可用於生產的 CXL 2.0 DRAM，使 Azure 和其他服務提供者能夠跨主機共享內存，從而提高利用率，同時推遲添加計算節點的資本支出。因此，供應商將晶圓生產從 DDR4 轉向 HBM，這導致傳統等級的記憶體供應緊張，但加速了高階市場的利潤成長。

亞太地區5G旗艦和中階智慧型手機LPDDR採用率激增

美光的一年期LPDDR5X樣品，運行速度高達9200 MT/s，將於2025年第一季交付給行動電話製造商，功耗降低20%，並將中國和印度機型的基準記憶體從8GB提升至12GB。小米、OPPO和傳音等新興品牌已簽訂長期合約，佔用亞太地區晶圓廠的產能，迫使供應商調整行動和資料中心領域的產能分配。這種轉變使得LPDDR自2015年LPDDR4量產以來，成為成長速度最快的行動記憶體。

週期性的供需關係導致平均售價出現劇烈波動

高利潤率的HBM內存條的吸引力促使工廠將DDR4運作推遲到2025年初，導致5月份主流內存條現貨價格上漲了50%。 DDR5記憶體的訂單量也成長了15%至20%，促使OEM廠商重新設計材料清單或超額訂購以避免價格進一步上漲。這種回饋循環加劇了市場波動，降低了生產計畫的可視性，導致動態隨機存取記憶體（DRAM）市場的預期複合年成長率下降了2個百分點以上。

細分市場分析

到2024年，DDR5在動態隨機存取記憶體（DRAM）市場中所佔比重仍然很小，但其預期複合年成長率（CAGR）將達到30.2%，成為成長最快的記憶體類型，這得益於JEDEC的JESD79-5C更新將其效能上限提升至8,800 Mbps。這項技術飛躍使得一級雲端服務商能夠運行DDR5-HBM3E混合配置，從而使每個插槽的有效頻寬翻倍。美光的1Y DDR5將於2025年2月達到9,200 MT/s的效能，這項里程碑將促使伺服器OEM廠商加速平台更新換代。同時，由於企業IT預算仍傾向於成本最佳化配置，DDR4在2024年之前將維持45.3%的動態隨機存取記憶體（DRAM）市場佔有率。隨著工業和汽車設計向新標準的過渡，傳統DDR3和DDR2的市佔率持續縮小。

每當晶圓分配給DDR5晶片，用於PC的DDR4晶片就會減少，這導致中國筆記型電腦組裝商的成本大幅上漲。持有長尾庫存的擁有者利用套利機會，以2017年以來前所未有的更高的價格清倉DDR4庫存。 JEDEC推出的新型CAMM2外形規格突破了SO-DIMM的高度限制，使筆記型電腦和邊緣伺服器能夠採用更高密度的單面堆疊式記憶體。這些封裝技術的改進推動了動態隨機存取記憶體（DRAM）市場對更高頻寬的需求，並帶動了消費級和企業級設備的普及。

預計到2024年，19nm至10nm製程市場將佔動態隨機存取記憶體（DRAM）市場規模的42.3%，並在2030年前以25.2%的年複合成長率成長。儘管採用EUV光刻技術的1Y製程晶片已於2025年第一季開始出貨，但其產量比率仍比成熟的1z製程晶片低至少8個百分點。因此，許多裝置製造商為了規避成本風險，續簽了1z和1y製程晶片的契約，從而提高了中節點製程的產量。

SK海力士公佈了垂直閘極DRAM藍圖，承諾從2027年起實現晶圓級堆疊，這標誌著其長期戰略重心將從橫向擴展轉向3D架構。考慮到光罩模組、材料和折舊免稅額成本，每次平面尺寸縮小帶來的成本降低不到12%，這促使晶圓廠尋求架構重新設計，而不僅僅是縮小幾何尺寸。移動和消費性電子產品對成本的敏感度使得20nm及以上製程節點對於價格敏感型產品而言仍然具有競爭力，這有助於晶圓廠實現產能多元化，並確保分層生產結構，從而支撐整體收入的穩定性。

動態隨機存取記憶體市場按架構（DDR2 之前、DDR3、DDR4、DDR5、LPDDR、GDDR）、製程節點（20 奈米以下、19 奈米至 10 奈米、10 奈米以上）、容量（4 GB 以下、4-8 GB、8-16 GB、16 GB 以上）、容量（4 GB 以下、4-8 GB、8-16 GB、16 GB 以上）、PC和筆記型電腦、伺服器和超大規模資料中心、其他）以及地區（北美、歐洲、亞太地區、南美、中東和非洲）進行細分。

區域分析

亞太地區預計2024年營收將維持31.2%的成長，主要得益於韓國、台灣和中國當地晶圓廠的強勁發展。韓國供應商已承諾在2028年投資120兆韓元（約840億美元）用於產能擴張，以確保其在HBM和傳統DRAM生產領域的主導。同時，台灣代工組裝也擴大了先進封裝生產線，以滿足日益成長的HBM4需求，並利用其在邏輯節點領域累積的前端技術，引入矽通孔技術以降低熱阻。

北美成為最大的消費市場，超大規模資料中心建置商加快了機架更新換代，美國汽車製造商也整合了區域控制器。美光科技獲得了《晶片法案》（CHIPS Act）61億美元的資金，用於建造一座新的巨型晶圓廠，旨在規避地緣政治風險並縮短國內客戶的前置作業時間。在歐洲，技術重點集中在汽車和工業應用領域，德國原始設備製造商（OEM）堅持以高價提供長壽命、高溫保固。

預計南美洲將以22.2%的複合年成長率成長，這主要得益於巴西、阿根廷和墨西哥對電子組裝生態系統的培育以及供應鏈在地化的推進。降低國產組裝記憶體組件進口關稅的政策誘因正在推動籌資策略漸進但意義深遠的轉變。中東和非洲地區實現了中等個位數的成長，這得益於波灣合作理事會資料中心的建設以及奈及利亞和肯亞智慧型手機普及率的提高，儘管政治不穩定仍然限制智慧型手機的普及。總而言之，這些區域趨勢表明，在東亞製造地的背景下，充滿活力的隨機存取記憶體（DRAM）市場正在實現收入來源多元化。

其他福利：

  • Excel格式的市場預測（ME）表
  • 3個月的分析師支持

目錄

第1章 引言

  • 研究假設和市場定義
  • 調查範圍

第2章調查方法

第3章執行摘要

第4章 市場情勢

  • 市場概覽
  • 市場促進因素
    • 加速超大規模資料中心採用人工智慧和生成式人工智慧工作負載
    • 亞太地區5G旗艦和中階智慧型手機LPDDR採用率激增
    • 汽車區域/網域控制器從 NOR 遷移到高溫 DRAM
    • 邊緣人工智慧和工業IoT闆卡需要耐高溫DRAM模組
    • 雲端服務供應商遷移到 CXL 連線記憶體池
  • 市場限制
    • 週期性的供需關係導致平均售價出現劇烈波動
    • 10nm 和 Sub-EUV 節點產量比率下降的挑戰
    • 對中國的地緣政治出口限制阻礙了高密度伺服器DRAM的出貨。
  • 價值鏈分析
  • 技術展望
  • 監理展望
  • 波特五力分析
    • 供應商的議價能力
    • 買方的議價能力
    • 新進入者的威脅
    • 替代品的威脅
    • 競爭對手之間的競爭
  • 定價分析
    • DRAM現貨價格（每GB）
    • 價格趨勢分析
  • 宏觀經濟影響分析

第5章 市場規模與成長預測

  • 建築設計
    • DDR2之前
    • DDR3
    • DDR4
    • DDR5
    • LPDDR
    • GDDR
  • 依技術節點
    • 20奈米或以上
    • 19 nm-10 nm
    • 小於 10 奈米（極紫外光）
  • 按產能
    • 4 GB 或更少
    • 4-8 GB
    • 8-16 GB
    • 超過 16 GB
  • 按最終用途
    • 智慧型手機和平板電腦
    • 桌上型電腦和筆記型電腦
    • 伺服器和超大規模資料中心
    • 圖形和遊戲機
    • 汽車電子產品
    • 消費性電子產品（機上盒、智慧型電視、VR/AR）
    • 工業和物聯網設備
    • 其他
  • 按地區
    • 北美洲
      • 美國
      • 加拿大
      • 墨西哥
    • 歐洲
      • 德國
      • 法國
      • 英國
      • 北歐國家
      • 其他歐洲地區
    • 亞太地區
      • 中國
      • 台灣
      • 韓國
      • 日本
      • 印度
      • 亞太其他地區
    • 南美洲
      • 巴西
      • 智利
      • 阿根廷
      • 南美洲其他地區
    • 中東和非洲
      • 中東
      • 沙烏地阿拉伯
      • 阿拉伯聯合大公國
      • 土耳其
      • 其他中東地區
      • 非洲
      • 南非
      • 其他非洲地區

第6章 競爭情勢

  • 市場集中度
  • 策略趨勢
  • 市佔率分析
  • 公司簡介
    • Samsung Electronics Co., Ltd.
    • SK Hynix Inc.
    • Micron Technology Inc.
    • ChangXin Memory Technologies Inc.（CXMT）
    • Nanya Technology Corporation
    • Winbond Electronics Corporation
    • Powerchip Semiconductor Manufacturing Corp.（PSMC）
    • Fujian Jinhua Integrated Circuit Co., Ltd.（JHICC）
    • GigaDevice Semiconductor（Beijing）Inc.
    • Etron Technology Inc.
    • Integrated Silicon Solution Inc.（ISSI）
    • Elite Semiconductor Memory Technology Inc.（ESMT）
    • Zentel Electronics Corporation
    • Alliance Memory, Inc.
    • AP Memory Technology Corp.
    • Phison Electronics Corporation
    • JSC Mikron（Mikron Group）
    • AMIC Technology Corporation
    • Utron Technology Inc.
    • Hua Hong Semiconductor Limited

第7章 市場機會與未來展望

簡介目錄
Product Code: 59292

The Dynamic Random Access Memory market size is valued at USD 108.68 billion in 2025 and is projected to reach USD 232.97 billion by 2030, translating into a strong 16.47% CAGR.

Dynamic Random Access Memory (DRAM) - Market - IMG1

Accelerated adoption of AI-centric servers, the steep ramp-up of high-bandwidth memory, and tighter automotive qualification requirements have shifted purchasing criteria from capacity alone to a balanced focus on bandwidth, power, and thermal performance. Hyperscale cloud operators began refreshing racks with DDR5 and HBM3E modules during 2024, while handset OEMs in Asia moved much of their flagship and mid-tier portfolios to LPDDR5X, collectively keeping fab utilization above 95% through mid-2025. Memory content per electric vehicle rose quickly as zonal architectures replaced traditional ECU networks, pushing automotive DRAM demand into multi-gigabyte territory. At the same time, supply allocation conflicts between lucrative HBM3E and legacy DDR4 lines triggered price surges that reshaped cost-performance trade-offs for PCs, smartphones, and industrial IoT boards.

Global Dynamic Random Access Memory (DRAM) Market Trends and Insights

Ascending content footprint of AI and generative-AI workloads in hyperscale data centers

NVIDIA's 2025 Blackwell GP-AI platforms established bandwidth baselines that eclipsed conventional DDR architectures, lifting average server memory from 256 GB in 2024 to multi-terabyte deployments by mid-2025. With each HBM3E stack delivering more than 1 TB/s, cloud operators re-architected racks around memory-centric topologies. Samsung delivered production-ready CXL 2.0 DRAM that allowed Azure and other providers to pool memory across hosts, improving utilization while deferring capex on additional compute nodes. Suppliers consequently shifted wafer starts from DDR4 to HBM, triggering tightness in legacy grades but accelerating profit growth in the premium segment.

Soaring LPDDR adoption in 5G flagship and mid-tier smartphones across APAC

Micron's 1Y LPDDR5X samples running at 9,200 MT/s reached handset makers in Q1 2025, cutting power by 20% and raising baseline configurations in Chinese and Indian models from 8 GB to 12 GB RAM. Xiaomi, OPPO, and emerging brands such as Transsion are locked in forward contracts that consume a growing slice of APAC fab capacity, forcing suppliers to juggle commitments between mobile and datacenter lines. The shift gave LPDDR a steeper growth curve than any other mobile memory since LPDDR4 entered mass production in 2015.

Supply-demand cyclicality driving extreme ASP volatility

High-margin HBM pull-ins persuaded fabs to postpone DDR4 runs early in 2025, igniting a 50% spot-price jump for mainstream modules in May. DDR5 contracts also climbed 15-20%, prompting OEMs to re-engineer product bills of materials or over-order to hedge against further spikes. The feedback loop amplified volatility and cut visibility for production planning, knocking two-plus points from the Dynamic Random Access Memory market's forecast CAGR.

Other drivers and restraints analyzed in the detailed report include:

  1. Automotive zonal and domain controllers migrating from NOR to high-temperature DRAM
  2. Edge-AI and industrial IoT boards requiring extended-temperature DRAM modules
  3. Yield-erosion challenges below 10 nm EUV nodes

For complete list of drivers and restraints, kindly check the Table Of Contents.

Segment Analysis

DDR5 accounted for a minimal share of the Dynamic Random Access Memory market in 2024, yet carried the fastest 30.2% forecast CAGR, underpinned by JEDEC's JESD79-5C update that lifted performance ceilings to 8,800 Mbps. That technical leap allowed tier-1 cloud builders to run mixed DDR5-HBM3E configurations that doubled per-socket effective bandwidth. Micron's 1Y DDR5 reached 9,200 MT/s in February 2025, a milestone that pushed server OEMs to pull forward platform refreshes. Meanwhile, DDR4 retained a 45.3% Dynamic Random Access Memory market share through 2024 because corporate IT budgets still favoured cost-optimized configurations. Legacy DDR3 and DDR2 footprints continued to shrink as industrial and automotive design-ins migrated to newer standards.

Suppliers confronted a balancing act: every wafer reassigned to DDR5 meant fewer DDR4 chips for PCs, driving cost spikes that flowed downstream to notebook assemblers in China. Holders of long-tail inventory exploited arbitrage trading, unloading stockpiled DDR4 at premiums unseen since 2017. JEDEC's new CAMM2 form factor removed the height constraints of SO-DIMMs, letting laptops and edge servers adopt denser single-sided stacks. Those packaging gains fed into the Dynamic Random Access Memory market's momentum toward higher-bandwidth norms across consumer and enterprise devices.

The 19 nm-10 nm bracket held 42.3% of the Dynamic Random Access Memory market size in 2024 and is projected to grow 25.2% through 2030 as suppliers squeeze additional dies per wafer without plunging into the yield-risk chasm of sub-10 nm. EUV-enabled 1Y production began shipping revenue units in Q1 2025, but line yields remained at least eight points below mature 1z lines. Consequently, many device makers renewed agreements for 1z and 1y grades to buffer cost risk, giving mid-node processes a volume boost.

SK Hynix laid out a vertical-gate DRAM roadmap that promises wafer-level stacking beyond 2027, signalling the long-term pivot from lateral scaling to 3D architectures. Each successive planar shrink delivers less than 12% cost reduction after mask set, materials, and depreciation are factored in, nudging fabs to look for structural redesigns rather than geometrical shrink alone. Cost sensitivity in mobile and consumer electronics kept >=20 nm nodes alive for price-focused SKUs, ensuring a stratified production mix that diversified fab output and underpinned overall revenue resiliency.

Dynamic Random Access Memory Market is Segmented by Architecture (DDR2 and Earlier, DDR3, DDR4, DDR5, LPDDR, and GDDR), Technology Node (>=20 Nm, 19 Nm-10 Nm, and <10 Nm), Capacity (<=4 GB, 4-8 GB, 8-16 GB, and >=16 GB), End-Use Application (Smartphones and Tablets, Pcs and Laptops, Servers and Hyperscale Data Centers, and More), and Geography (North America, Europe, Asia-Pacific, South America, and Middle East and Africa).

Geography Analysis

Asia-Pacific retained a 31.2% revenue position in 2024 on the strength of fabs clustered across South Korea, Taiwan, and mainland China. South Korean suppliers pledged KRW 120 trillion (USD 84 billion) for capacity build-outs through 2028, a figure intended to safeguard leadership in both HBM and traditional DRAM production. Taiwan's contract assembly houses, meanwhile, expanded advanced packaging lines to service rising HBM4 demand, leveraging front-end know-how from logic nodes to introduce Through-Silicon-Via innovations that reduce thermal resistance.

North America formed the largest consumption market as hyperscale builders accelerated rack refreshes and automakers in the United States integrated zonal controllers. Micron secured USD 6.1 billion CHIPS Act funding to construct a new megafab, a move aimed at de-risking geopolitical exposure and shortening lead times for domestic clients. Europe maintained a technology focus on automotive and industrial applications, with German OEMs insisting on extended temperature and longevity guarantees that fetched premium pricing.

South America is forecast to grow at a 22.2% CAGR as Brazil, Argentina, and Mexico nurture electronics assembly ecosystems to localize supply. Policy incentives cut import tariffs on memory components assembled domestically, creating modest but meaningful shifts in sourcing strategies. The Middle East and Africa displayed mid-single-digit growth anchored by data-center build-outs in Gulf Cooperation Council states and rising smartphone penetration in Nigeria and Kenya, yet political instability continued to temper wider adoption. Combined, these regional narratives underscore how the Dynamic Random Access Memory market diversifies revenue streams even as manufacturing remains concentrated in East Asia.

  1. Samsung Electronics Co., Ltd.
  2. SK Hynix Inc.
  3. Micron Technology Inc.
  4. ChangXin Memory Technologies Inc. (CXMT)
  5. Nanya Technology Corporation
  6. Winbond Electronics Corporation
  7. Powerchip Semiconductor Manufacturing Corp. (PSMC)
  8. Fujian Jinhua Integrated Circuit Co., Ltd. (JHICC)
  9. GigaDevice Semiconductor (Beijing) Inc.
  10. Etron Technology Inc.
  11. Integrated Silicon Solution Inc. (ISSI)
  12. Elite Semiconductor Memory Technology Inc. (ESMT)
  13. Zentel Electronics Corporation
  14. Alliance Memory, Inc.
  15. AP Memory Technology Corp.
  16. Phison Electronics Corporation
  17. JSC Mikron (Mikron Group)
  18. AMIC Technology Corporation
  19. Utron Technology Inc.
  20. Hua Hong Semiconductor Limited

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Assumptions and Market Definition
  • 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE

  • 4.1 Market Overview
  • 4.2 Market Drivers
    • 4.2.1 Ascending Content Footprint of AI and Generative-AI Workloads in Hyperscale Data Centers
    • 4.2.2 Soaring LPDDR Adoption in 5G Flagship and Mid-Tier Smartphones Across APAC
    • 4.2.3 Automotive Zonal/Domain Controllers Migrating from NOR to High-Temperature DRAM
    • 4.2.4 Edge-AI and Industrial IoT Boards Requiring Extended-Temperature DRAM Modules
    • 4.2.5 Cloud Service Providers' Transition to CXL-attached Memory Pools
  • 4.3 Market Restraints
    • 4.3.1 Supply-Demand Cyclicality Driving Extreme ASP Volatility
    • 4.3.2 Yield-Erosion Challenges Below 10 nm EUV Nodes
    • 4.3.3 Geopolitical Export Controls on China Limiting High-density Server DRAM Shipments
  • 4.4 Value Chain Analysis
  • 4.5 Technological Outlook
  • 4.6 Regulatory Outlook
  • 4.7 Porter's Five Forces Analysis
    • 4.7.1 Bargaining Power of Suppliers
    • 4.7.2 Bargaining Power of Buyers
    • 4.7.3 Threat of New Entrants
    • 4.7.4 Threat of Substitute Products
    • 4.7.5 Intensity of Competitive Rivalry
  • 4.8 Pricing Analysis
    • 4.8.1 DRAM Spot Price (Per GB)
    • 4.8.2 Pricing Trends Analysis
  • 4.9 Macroeconomic Impact Analysis

5 MARKET SIZE AND GROWTH FORECASTS (VALUE)

  • 5.1 By Architecture
    • 5.1.1 DDR2 and Earlier
    • 5.1.2 DDR3
    • 5.1.3 DDR4
    • 5.1.4 DDR5
    • 5.1.5 LPDDR
    • 5.1.6 GDDR
  • 5.2 By Technology Node
    • 5.2.1 >=20 nm
    • 5.2.2 19 nm - 10 nm
    • 5.2.3 <10 nm (EUV)
  • 5.3 By Capacity
    • 5.3.1 <=4 GB
    • 5.3.2 4 - 8 GB
    • 5.3.3 8 - 16 GB
    • 5.3.4 >=16 GB
  • 5.4 By End-use Application
    • 5.4.1 Smartphones and Tablets
    • 5.4.2 PCs and Laptops
    • 5.4.3 Servers and Hyperscale Data Centers
    • 5.4.4 Graphics and Gaming Consoles
    • 5.4.5 Automotive Electronics
    • 5.4.6 Consumer Electronics (Set-top Boxes, Smart TV, VR/AR)
    • 5.4.7 Industrial and IoT Devices
    • 5.4.8 Others
  • 5.5 By Geography
    • 5.5.1 North America
      • 5.5.1.1 United States
      • 5.5.1.2 Canada
      • 5.5.1.3 Mexico
    • 5.5.2 Europe
      • 5.5.2.1 Germany
      • 5.5.2.2 France
      • 5.5.2.3 United Kingdom
      • 5.5.2.4 Nordics
      • 5.5.2.5 Rest of Europe
    • 5.5.3 Asia-Pacific
      • 5.5.3.1 China
      • 5.5.3.2 Taiwan
      • 5.5.3.3 South Korea
      • 5.5.3.4 Japan
      • 5.5.3.5 India
      • 5.5.3.6 Rest of Asia-Pacific
    • 5.5.4 South America
      • 5.5.4.1 Brazil
      • 5.5.4.2 Chile
      • 5.5.4.3 Argentina
      • 5.5.4.4 Rest of South America
    • 5.5.5 Middle East and Africa
      • 5.5.5.1 Middle East
      • 5.5.5.1.1 Saudi Arabia
      • 5.5.5.1.2 United Arab Emirates
      • 5.5.5.1.3 Turkey
      • 5.5.5.1.4 Rest of Middle East
      • 5.5.5.2 Africa
      • 5.5.5.2.1 South Africa
      • 5.5.5.2.2 Rest of Africa

6 COMPETITIVE LANDSCAPE

  • 6.1 Market Concentration
  • 6.2 Strategic Moves
  • 6.3 Market Share Analysis
  • 6.4 Company Profiles (includes Global-level Overview, Market-level Overview, Core Segments, Financials as available, Strategic Information, Market Rank/Share for key companies, Products and Services, and Recent Developments)
    • 6.4.1 Samsung Electronics Co., Ltd.
    • 6.4.2 SK Hynix Inc.
    • 6.4.3 Micron Technology Inc.
    • 6.4.4 ChangXin Memory Technologies Inc. (CXMT)
    • 6.4.5 Nanya Technology Corporation
    • 6.4.6 Winbond Electronics Corporation
    • 6.4.7 Powerchip Semiconductor Manufacturing Corp. (PSMC)
    • 6.4.8 Fujian Jinhua Integrated Circuit Co., Ltd. (JHICC)
    • 6.4.9 GigaDevice Semiconductor (Beijing) Inc.
    • 6.4.10 Etron Technology Inc.
    • 6.4.11 Integrated Silicon Solution Inc. (ISSI)
    • 6.4.12 Elite Semiconductor Memory Technology Inc. (ESMT)
    • 6.4.13 Zentel Electronics Corporation
    • 6.4.14 Alliance Memory, Inc.
    • 6.4.15 AP Memory Technology Corp.
    • 6.4.16 Phison Electronics Corporation
    • 6.4.17 JSC Mikron (Mikron Group)
    • 6.4.18 AMIC Technology Corporation
    • 6.4.19 Utron Technology Inc.
    • 6.4.20 Hua Hong Semiconductor Limited

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK

  • 7.1 White-space and Unmet-need Assessment