氮化鎵裝置市場－2025-2030年預測

全球氮化鎵裝置市場預計將從 2025 年的 248.05 億美元成長到 2030 年的 323.42 億美元，複合年成長率為 5.45%。

寬能能隙，具有優異的介電擊穿強度、快速開關特性、高導熱性和低電阻率，正在革新電力電子領域。透過在矽基基板外延生長 GaN 層，製造商可以利用現有基礎設施降低成本，並實現無需專用設施的大尺寸晶圓生產。 GaN 的功率效率優於矽，使其在高頻、高壓應用中廣泛應用。受 5G 擴展、家用電子電器需求、可再生能源併網、汽車電氣化以及高效能運算技術進步的推動，全球 GaN 裝置市場預計將保持強勁成長。亞太地區的製造優勢以及矽基 GaN 成本的下降進一步推動了市場發展。

市場趨勢

氮化鎵（GaN）的多功能性使其能夠支援緊湊高效的設計，應用範圍涵蓋從增強通訊網路到為智慧型設備供電等各個領域。在可再生能源領域，它有助於最佳化太陽能和風能逆變器；在汽車領域，它能夠提升電動車的電源管理和效率。高效能運算受益於氮化鎵更快的處理器，而亞太地區的在地化生產正在推動市場需求。基於矽的氮化鎵創新簡化了生產流程，降低了進入門檻，擴大了應用範圍。

成長驅動力

家用電子電器和通訊的快速成長

家用電子電器市場在可支配收入成長的推動下快速發展，促使高效充電器和小型設備中廣泛採用氮化鎵（GaN）技術。隨著5G的推出，通訊產業預計將迎來指數級成長，對高速、高功率密度的組件提出了更高的要求。 GaN在射頻放大器和基地台的卓越性能，能夠滿足激增的數據流量和網路需求，從而幫助這項轉型。

可再生能源和汽車應用

氮化鎵（GaN）可最佳化太陽能和風能系統的功率轉換，提高效率並降低損耗。在汽車領域，它能為電動車實現先進的電源管理，從而提升續航里程和充電速度。這些領域的拓展，以及全球永續性目標的推進，正進一步擴大氮化鎵在節能解決方案中的作用。

市場限制

GaN 特定製程的高昂初始開發成本以及供應鏈對稀有材料的依賴性會阻礙因素可擴展性，與傳統矽系統的整合挑戰也會限制其可擴展性，尤其是在成本敏感型應用中。

市場區隔分析

按終端用戶分類，家用電子電器和通訊佔據主導地位，這主要得益於對高效能射頻和功率裝置的需求。可再生能源和汽車產業正在快速成長，它們利用氮化鎵技術製造逆變器和車載充電器。其他行業，包括國防和計算，也在穩步貢獻力量。依技術分類，矽基氮化鎵（GaN-on-Si）憑藉其成本優勢佔據主導，而碳化矽基氮化鎵（GaN-on-SiC）則瞄準高功率需求。按地區分類，亞太地區佔最大佔有率，這主要得益於中國和日本的製造地、智慧型設備的蓬勃發展以及可再生能源計劃的推進。

競爭格局

英飛凌、羅姆和Guerrilla RF等主要企業正致力於建立夥伴關係、晶圓創新和高功率解決方案，以獲得市場佔有率。他們的策略重點在於降低成本、提升效能，並提供產業專用的解決方案，以滿足通訊、汽車和可再生能源等產業不斷變化的需求。

區域分析

亞太地區憑藉工業化、低成本製造以及不斷成長的家用電子電器需求，正引領經濟成長，全球智慧型手機普及率已超過60%。大型太陽能發電工程等可再生能源措施也進一步推動了該地區的成長。北美和歐洲緊隨其後，電動車和5G領域的研發投入為其發展注入了強勁動力。同時，新興市場也蘊藏著巨大的擴張機會。

受5G、電動車和可再生能源的推動，主導是亞太地區的成長，氮化鎵（GaN）裝置市場預計將迎來快速成長。矽基技術的創新正在降低成本，使其更具競爭力。晶圓技術的最新進展和夥伴關係表明，氮化鎵的應用正在加速，使其成為高效能、高性能電子設備的關鍵材料。

本報告的主要優勢：

• 深入分析：取得以客戶群、政府政策和社會經濟因素、消費者偏好、垂直產業和其他細分市場為重點的深入市場洞察，涵蓋主要地區和新興地區。
• 競爭格局：了解主要企業採取的策略舉措，並了解透過正確的策略實現市場滲透的潛力。
• 市場促進因素與未來趨勢：探索動態因素和關鍵市場趨勢，以及它們將如何塑造未來的市場發展。
• 可執行的建議：利用洞察力為策略決策提供訊息，從而在動態環境中開拓新的業務管道和收入來源。
• 受眾範圍廣：對新興企業、研究機構、顧問公司、中小企業和大型企業都有益處且經濟高效。

它是用來做什麼的？

產業與市場洞察、商業機會評估、產品需求預測、打入市場策略、地理擴張、資本投資決策、法律規範及其影響、新產品開發、競爭影響

分析範圍

• 歷史資料（2022-2024 年）和預測資料（2025-2030 年）
• 成長機會、挑戰、供應鏈前景、法規結構、客戶行為和趨勢分析
• 競爭對手定位、策略和市場佔有率分析
• 按業務板塊和地區（國家）分類的收入成長和預測分析
• 公司概況（策略、產品、財務資訊、關鍵趨勢等）

目錄

第1章執行摘要

第2章市場概述

• 市場概覽
• 市場定義
• 分析範圍
• 市場區隔

第3章 商業情境

• 市場促進因素
• 市場限制
• 市場機遇
• 波特五力分析
• 產業價值鏈分析
• 政策和法規
• 策略建議

第4章 技術展望

5. 全球氮化鎵裝置市場（依晶圓尺寸分類）

• 介紹
• 2英吋
• 4吋
• 6吋

6. 全球氮化鎵裝置市場（依電壓分類）

• 介紹
• 40伏特或以下
• 40至100伏
• 100伏特或以上

7. 全球氮化鎵裝置市場（依最終用戶分類）

• 介紹
• 家用電子電器
• 資訊科技/通訊
• 車
• 航太/國防
• 醫療保健
• 其他

8. 全球氮化鎵裝置市場（按地區分類）

• 介紹
• 美洲
  • 按晶圓尺寸
  • 透過電壓
  • 最終用戶
  • 按國家/地區
  • 美國
• 歐洲、中東和非洲
  • 按晶圓尺寸
  • 透過電壓
  • 最終用戶
  • 按國家/地區
    • 德國
    • 法國
    • 荷蘭
    • 其他
• 亞太地區
  • 按晶圓尺寸
  • 透過電壓
  • 最終用戶
  • 按國家/地區
    • 中國
    • 日本
    • 韓國
    • 台灣
    • 其他

第9章 競爭格局與分析

• 主要企業和策略分析
• 市佔率分析
• 企業合併、協議、商業合作
• 競爭對手儀錶板

第10章：公司簡介

• Infineon Technologies AG
• ROHM Semiconductor
• Broadcom Inc.
• Renesas Electronics Corporation
• Qorvo, Inc.
• Northrop Grumman
• Texas Instruments Inc.
• Sumitomo Electric Industries Ltd.
• MACOM
• Mitsubishi Electric Corporation

第11章附錄

• 貨幣
• 先決條件
• 基準年和預測年時間表
• 相關人員的主要收益
• 分析方法
• 簡稱

The Global Gallium Nitride Device Market will climb from USD 24.805 billion in 2025 to USD 32.342 billion in 2030, registering a 5.45% compound annual growth rate (CAGR).

Gallium Nitride (GaN) devices, leveraging a wide bandgap semiconductor with superior breakdown strength, faster switching speeds, higher thermal conductivity, and low resistance, are revolutionizing power electronics. By epitaxially growing GaN layers on silicon substrates, manufacturers reduce costs through existing infrastructure, enabling larger wafer production without specialized facilities. GaN outperforms silicon in power efficiency, driving adoption in high-frequency, high-voltage applications. The global GaN device market is poised for robust growth, fueled by 5G expansion, consumer electronics demand, renewable energy integration, automotive electrification, and high-performance computing advancements. Asia-Pacific's manufacturing dominance and cost reductions in silicon-based GaN further accelerate market momentum.

Market Trends

GaN's versatility supports compact, efficient designs across sectors, from enhancing telecommunication networks to powering smart devices. Its role in renewable energy optimizes solar and wind inverters, while in automotive, it improves EV power management and efficiency. High-performance computing benefits from GaN's faster processors, and regional manufacturing in Asia-Pacific boosts demand. Innovations in silicon-based GaN streamline production, lowering barriers to entry and expanding accessibility.

Growth Drivers

Surge in Consumer Electronics and Telecommunications

The booming consumer electronics market, driven by rising disposable incomes, propels GaN adoption for efficient chargers and compact devices. Telecommunications sees exponential growth from 5G rollout, requiring high-speed, power-dense components. GaN's superior performance in RF amplifiers and base stations supports this transition, addressing surging data traffic and network demands.

Renewable Energy and Automotive Adoption

GaN optimizes power conversion in solar and wind systems, enhancing efficiency and reducing losses. In automotive, it enables advanced power management for EVs, improving range and charging speeds. These sectors' expansion, coupled with global sustainability goals, amplifies GaN's role in energy-efficient solutions.

Market Restraints

High initial development costs for GaN-specific processes and supply chain dependencies on rare materials may constrain scalability. Integration challenges with legacy silicon systems also pose hurdles, particularly in cost-sensitive applications.

Market Segment Analysis

By end-user, consumer electronics and telecommunications dominate, driven by demand for high-efficiency RF and power devices. Renewable energy and automotive segments grow rapidly, leveraging GaN for inverters and onboard chargers. Defense and others, including computing, contribute steadily. By technology, GaN-on-Si leads for cost advantages, while GaN-on-SiC targets high-power needs. Geographically, Asia-Pacific holds the largest share, propelled by manufacturing hubs in China and Japan, with surging smart device penetration and renewable projects.

Key Developments

In January 2025, Guerrilla RF Inc. launched GRF0020D and GRF0030D, GaN-on-SiC HEMT power amplifiers delivering up to 50W saturated power for wireless infrastructure, military, aerospace, and industrial heating markets. In December 2024, ROHM Semiconductor partnered with TSMC for GaN power device development and volume production targeting EV applications. In September 2024, Infineon Technologies developed 300 mm power GaN wafer technology, pioneering larger-scale production to substantially advance GaN-based power semiconductors.

Competitive Landscape

Leading players like Infineon, ROHM, and Guerrilla RF focus on partnerships, wafer innovations, and high-power solutions to capture market share. Strategies emphasize cost reduction, performance enhancement, and sector-specific tailoring to meet evolving demands in telecom, automotive, and renewables.

Regional Analysis

Asia-Pacific drives growth through industrialization, low-cost manufacturing, and rising consumer electronics demand, with smartphone penetration exceeding 60% globally. Renewable initiatives, like large-scale solar projects, further bolster the region. North America and Europe follow, supported by R&D in EVs and 5G, while emerging markets offer expansion opportunities.

The GaN device market is set for exponential growth, propelled by 5G, EVs, and renewables, with Asia-Pacific leading. Silicon-based innovations reduce costs, enhancing competitiveness against silicon alternatives. Recent advancements in wafer tech and partnerships signal accelerated adoption, positioning GaN as pivotal for efficient, high-performance electronics.

Key Benefits of this Report:

• Insightful Analysis: Gain detailed market insights covering major as well as emerging geographical regions, focusing on customer segments, government policies and socio-economic factors, consumer preferences, industry verticals, and other sub-segments.
• Competitive Landscape: Understand the strategic maneuvers employed by key players globally to understand possible market penetration with the correct strategy.
• Market Drivers & Future Trends: Explore the dynamic factors and pivotal market trends and how they will shape future market developments.
• Actionable Recommendations: Utilize the insights to exercise strategic decisions to uncover new business streams and revenues in a dynamic environment.
• Caters to a Wide Audience: Beneficial and cost-effective for startups, research institutions, consultants, SMEs, and large enterprises.

What do businesses use our reports for?

Industry and Market Insights, Opportunity Assessment, Product Demand Forecasting, Market Entry Strategy, Geographical Expansion, Capital Investment Decisions, Regulatory Framework & Implications, New Product Development, Competitive Intelligence

Report Coverage:

• Historical data from 2022 to 2024 & forecast data from 2025 to 2030
• Growth Opportunities, Challenges, Supply Chain Outlook, Regulatory Framework, and Trend Analysis
• Competitive Positioning, Strategies, and Market Share Analysis
• Revenue Growth and Forecast Assessment of segments and regions including countries
• Company Profiling (Strategies, Products, Financial Information, and Key Developments among others.

The Gallium Nitride Device Market is analyzed into the following segments:

By Wafer Size

• 2 inch
• 4 inch
• 6 inch

By Voltage

• Up to 40 Volts
• 40 to 100 Volts
• Greater than 100 Volts

By End-User

• Consumer Electronics
• IT & Telecommunication
• Automotive
• Aerospace & Defense
• Healthcare
• Others

By Geography

• Americas
• USA
• Europe Middle East and Africa
• Germany
• France
• Netherlands
• Others
• Asia Pacific
• China
• Japan
• South Korea
• Taiwan
• Others

TABLE OF CONTENTS

1. EXECUTIVE SUMMARY

2. MARKET SNAPSHOT

• 2.1. Market Overview
• 2.2. Market Definition
• 2.3. Scope of the Study
• 2.4. Market Segmentation

3. BUSINESS LANDSCAPE

• 3.1. Market Drivers
• 3.2. Market Restraints
• 3.3. Market Opportunities
• 3.4. Porter's Five Forces Analysis
• 3.5. Industry Value Chain Analysis
• 3.6. Policies and Regulations
• 3.7. Strategic Recommendations

4. TECHNOLOGICAL OUTLOOK

5. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY WAFER SIZE

• 5.1. Introduction
• 5.2. 2 inch
• 5.3. 4 inch
• 5.4. 6 inch

6. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY VOLTAGE

• 6.1. Introduction
• 6.2. Up to 40 Volts
• 6.3. 40 to 100 Volts
• 6.4. Greater than 100 Volts

7. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY END-USER

• 7.1. Introduction
• 7.2. Consumer Electronics
• 7.3. IT & Telecommunication
• 7.4. Automotive
• 7.5. Aerosapce & Defense
• 7.6. Healthcare
• 7.7. Others

8. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY GEOGRAPHY

• 8.1. Introduction
• 8.2. Americas
  • 8.2.1. By Wafer Size
  • 8.2.2. By Voltage
  • 8.2.3. By End-User
  • 8.2.4. By Country
  • 8.2.5. USA
• 8.3. Europe Middle East and Africa
  • 8.3.1. By Wafer Size
  • 8.3.2. By Voltage
  • 8.3.3. By End-User
  • 8.3.4. By Country
    • 8.3.4.1. Germany
    • 8.3.4.2. France
    • 8.3.4.3. Netherlands
    • 8.3.4.4. Others
• 8.4. Asia Pacific
  • 8.4.1. By Wafer Size
  • 8.4.2. By Voltage
  • 8.4.3. By End-User
  • 8.4.4. By Country
    • 8.4.4.1. China
    • 8.4.4.2. Japan
    • 8.4.4.3. South Korea
    • 8.4.4.4. Taiwan
    • 8.4.4.5. Others

9. COMPETITIVE ENVIRONMENT AND ANALYSIS

• 9.1. Major Players and Strategy Analysis
• 9.2. Market Share Analysis
• 9.3. Mergers, Acquisitions, Agreements, and Collaborations
• 9.4. Competitive Dashboard

10. COMPANY PROFILES

• 10.1. Infineon Technologies AG
• 10.2. ROHM Semiconductor
• 10.3. Broadcom Inc.
• 10.4. Renesas Electronics Corporation
• 10.5. Qorvo, Inc.
• 10.6. Northrop Grumman
• 10.7. Texas Instruments Inc.
• 10.8. Sumitomo Electric Industries Ltd.
• 10.9. MACOM
• 10.10. Mitsubishi Electric Corporation

11. APPENDIX

• 11.1. Currency
• 11.2. Assumptions
• 11.3. Base and Forecast Years Timeline
• 11.4. Key benefits for the stakeholders
• 11.5. Research Methodology
• 11.6. Abbreviations