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市場調查報告書
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1825333

分離式二極體市場:2025-2030 年預測

Discrete Diodes Market - Forecasts from 2025 to 2030

出版日期: | 出版商: Knowledge Sourcing Intelligence | 英文 150 Pages | 商品交期: 最快1-2個工作天內

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簡介目錄

分離式二極體市場預計將從 2025 年的 42.54 億美元成長到 2030 年的 54.77 億美元,複合年成長率為 5.19%。

分立二極體,也稱為半導體二極體,是一種具有非對稱電阻特性的基本電子元件。這些半導體裝置以正向偏壓導電,因此與流經它們的電流相比,其電壓降較小,使其成為各種電子應用中必不可少的元件。

這項技術的多功能性源自於其能夠有效控制電子電路中的電流和調節電壓。現代分離式二極體受益於晶片結構和半導體製造製程的不斷創新,性能特性不斷提升,並拓展了其在多個行業的應用範圍。

市場基本面與成長軌跡

由於消費性電子、工業應用、醫療設備和汽車電子領域的快速擴張和應用,分離式二極體市場呈現強勁成長動能。物聯網 (IoT) 設備需求的不斷成長進一步推動了市場發展,這些設備需要分立二極體提供的高效電源管理解決方案。

市場受益於半導體製造技術的進步以及對電子系統電源效率的日益重視,這些因素共同創造了對各種工業應用中高性能分立二極體解決方案的持續需求。

市場促進因素

數據和通訊對節能半導體的需求

推動市場成長的最重要因素是資料通訊產業對節能半導體的需求不斷成長。數位轉型計畫、遠距工作的日益普及以及網路服務的使用增加,顯著增加了流量,並刺激了對資料中心和通訊基地台的資本投資。

投資激增正在為電源帶來更大的需求和市場機會。先進的射頻開關技術表明,業界正致力於用更有效率的替代方案取代傳統解決方案。最新的開關系列能夠取代需要多個被動元件和高壓偏壓電源的傳統PIN二極體開關,從而節省基板空間、降低整體成本並簡化射頻前端設計。

市場區隔分析

產品類型領先:肖特基二極體

肖特基二極體憑藉其在電力消耗領域降低功率損耗的專業應用,佔據了相當大的市場佔有率。這些元件在資料中心和通訊基地台台中發揮關鍵作用,功率半導體可以有效地將來自公共設施的交流電轉換為系統運作所需的直流電。

功率半導體應用面臨的一個主要挑戰是電力傳輸過程中的穩態功率損耗。先進的解決方案透過減少基板厚度、縮短能量傳輸距離和降低功率損耗來應對這項挑戰。第二代分立碳化矽肖特基勢壘二極體 (SBD) 技術代表了資料中心和通訊基地台能源效率的顯著提升。

這些先進系列採用厚度約為傳統第一代 SiC-SBD 系列三分之一的碳化矽基板,並結合重新設計的晶片結構,實現了顯著的穩態損耗降低,展示了該技術向提高效率的方向發展。

市場區域分佈

亞太市場優勢

亞太地區在分立二極體市場佔有相當大的佔有率,這主要得益於新興市場對智慧城市計劃的投資不斷增加。智慧城市是一項城市發展計劃,旨在將綜合資訊和通訊技術融入城市基礎設施,以改善資產和資源管理。

隨著亞太地區各國大力推動智慧城市建設,包括政府、ICT服務供應商和智慧設備製造商在內的各相關人員在解決方案的實施中發揮關鍵作用。這些投資將加速網路基礎設施的建設,以支持通訊需求,創造巨大的市場機會。

智慧城市計畫正在增加對智慧燈、智慧電錶、智慧家電和通訊設備等連網產品的需求,直接推動全部區域對分離式二極體的需求。

近期市場發展趨勢

市場正透過先進的產品發布展現持續的技術創新。碳化矽肖特基勢壘二極體代表了一項重大的技術進步,它不僅顯著提升了效率,提高了高溫可靠性,也滿足了市場對降低系統運作成本和減少維護需求的需求。

這些元件支援各種應用,包括交流-直流 (AC-DC)、直流-直流 (DC-DC) 和直流-交流 (DC-AC) 開關轉換器、太陽能逆變器、不斷電系統以及工業馬達驅動應用。其他應用包括功率因數校正升壓轉換器和其他專用電路實作。

本報告的主要優點

  • 深刻分析:獲得深入的市場洞察,重點關注客戶細分、政府政策和社會經濟因素、消費者偏好、垂直行業和其他細分市場,涵蓋主要地區和新興地區。
  • 競爭格局:了解主要企業所採用的策略策略,並了解正確策略的市場滲透潛力。
  • 市場趨勢和促進因素:探索動態因素和關鍵市場趨勢以及它們將如何影響未來的市場發展。
  • 可行的建議:利用洞察力進行策略決策,並在動態環境中開闢新的業務流和收益。
  • 適合廣泛的使用者:對於新興企業、研究機構、顧問、中小企業和大型企業來說都是有益且具有成本效益的。

它有什麼用途?

產業和市場考量、商業機會評估、產品需求預測、打入市場策略、地理擴張、資本投資決策、法律規範與影響、新產品開發、競爭影響

調查範圍

  • 2022 年至 2024 年的歷史數據和 2025 年至 2030 年的預測數據
  • 成長機會、挑戰、供應鏈前景、法律規範與趨勢分析
  • 競爭定位、策略和市場佔有率分析
  • 收益成長和預測細分市場和區域分析(包括國家)
  • 公司概況(尤其是財務狀況和關鍵發展)

目錄

第1章執行摘要

第2章市場概述

  • 市場概況
  • 市場定義
  • 調查範圍
  • 市場區隔

第3章 經營狀況

  • 市場促進因素
  • 市場限制
  • 市場機遇
  • 波特五力分析
  • 產業價值鏈分析
  • 政策法規
  • 策略建議

第4章 技術展望

第5章分立二極體市場(依產品類型)

  • 介紹
  • 齊納二極體
  • 肖特基二極體
  • 整流二極體
  • 其他

第6章 分立二極體市場(依材料)

  • 介紹
  • 碳化矽
  • 氮化鎵
  • 其他

第7章 分立二極體市場(依最終用戶)

  • 介紹
  • 家電
  • 資訊科技/通訊
  • 航太和國防
  • 其他

第8章分立二極體市場(按地區)

  • 介紹
  • 北美洲
    • 美國
    • 加拿大
    • 墨西哥
  • 南美洲
    • 巴西
    • 阿根廷
    • 其他
  • 歐洲
    • 德國
    • 法國
    • 英國
    • 義大利
    • 其他
  • 中東和非洲
    • 沙烏地阿拉伯
    • 阿拉伯聯合大公國
    • 其他
  • 亞太地區
    • 中國
    • 印度
    • 日本
    • 韓國
    • 台灣
    • 其他

第9章:競爭格局及分析

  • 主要企業和策略分析
  • 市佔率分析
  • 合併、收購、協議和合作
  • 競爭對手儀表板

第10章:公司簡介

  • Diodes Incorporated
  • Infineon Technologies AG
  • Littelfuse Inc
  • Microchip Technology
  • NXP Semiconductors
  • Onsemi
  • ROHM Co Ltd
  • Semikron
  • STMicroelectronics
  • Vishay Intertechnology Inc

第11章 附錄

  • 貨幣
  • 先決條件
  • 基準年和預測年時間表
  • 相關人員的主要利益
  • 調查方法
  • 簡稱
簡介目錄
Product Code: KSI061614348

The discrete diodes market is expected to grow from USD 4.254 billion in 2025 to USD 5.477 billion in 2030, at a CAGR of 5.19%.

Discrete diodes, also known as semiconductor diodes, represent fundamental electrical components characterized by their asymmetric resistance properties-ideally zero resistance to current flow in one direction and infinite resistance in the opposite direction. These semiconductor devices conduct electricity when forward-biased, resulting in lower voltage drops compared to flowing current, making them essential components across diverse electronic applications.

The technology's versatility stems from its ability to efficiently control current flow and voltage regulation in electronic circuits. Modern discrete diodes benefit from continuous innovations in chip architecture and semiconductor manufacturing processes, enhancing their performance characteristics and expanding their application scope across multiple industries.

Market Fundamentals and Growth Trajectory

The discrete diodes market demonstrates robust growth driven by rapid expansion and proliferation across consumer electronics, industrial applications, medical devices, and automotive electronics sectors. Market momentum is further accelerated by the growing demand for Internet of Things (IoT) devices, which require efficient power management solutions that discrete diodes provide.

The market benefits from technological advancement in semiconductor manufacturing and increasing emphasis on power efficiency across electronic systems. These factors combine to create sustained demand for high-performance discrete diode solutions across diverse industrial applications.

Primary Market Drivers

Power-Efficient Semiconductor Demand in Data and Communications

The most significant driver propelling market growth stems from escalating demand for power-efficient semiconductors within the data and communications industry. Digital transformation initiatives, increased remote work adoption, and expanded Internet service utilization have created substantial traffic flow increases, driving capital investment in data centers and telecommunications base stations.

This investment surge generates increased demand for power supply equipment and market expansion opportunities. Advanced RF switch technologies demonstrate the industry's focus on replacing traditional solutions with more efficient alternatives. Modern switch families enable customers to replace conventional PIN diode-based switches, which require multiple passive components and high-voltage bias supplies, thereby saving board space, reducing total costs, and simplifying RF front-end design.

Market Segmentation Analysis

Product Type Leadership: Schottky Diodes

Schottky diodes are positioned to capture significant market share based on their specialized applications in power-consuming sectors for power loss mitigation. These devices play crucial roles in data centers and communication base stations, where power semiconductors efficiently convert AC power from utility companies into DC power for system operations.

The primary challenge in power semiconductor applications involves steady-state power loss during power delivery. Advanced solutions address this challenge through substrate thickness reduction, shortening energy travel distances to minimize power losses. Second-generation discrete Silicon Carbide Schottky Barrier Diode (SBD) technologies demonstrate significant advancement in energy efficiency for data centers and telecommunications base stations.

These advanced series utilize silicon carbide substrates approximately one-third the thickness of traditional first-generation SiC-SBD series, combined with redesigned chip structures that achieve substantial steady-state loss reductions, demonstrating the technology's evolution toward enhanced efficiency.

Geographic Market Distribution

Asia Pacific Market Dominance

The Asia Pacific region is positioned to maintain significant market share in the discrete diodes market, driven primarily by increasing investments in smart city projects across developing nations. Smart cities represent urban development initiatives where city infrastructure incorporates comprehensive information and communication technologies for improved asset and resource management.

Countries throughout the Asia Pacific region prioritize smart city construction, with various stakeholders including governments, ICT service providers, and smart device manufacturers playing essential roles in solution implementation. These investments accelerate network infrastructure development to support communication requirements and create substantial market opportunities.

Smart city initiatives generate increased demand for connected products including smart lights, smart meters, smart appliances, and telecommunications equipment, directly driving discrete diode demand throughout the region.

Recent Market Developments

The market demonstrates continued innovation through advanced product launches. Silicon Carbide Schottky barrier diodes represent significant technological advancement, providing substantial efficiency improvements and high-temperature reliability while meeting market requirements for reduced system operating costs and minimal maintenance requirements.

These devices support diverse applications including AC-DC, DC-DC, and DC-AC switching converters, photovoltaic inverters, uninterruptible power supplies, and industrial motor driving applications. Additional applications include power factor correction boost converters and other specialized circuit implementations.

Key Benefits of this Report:

  • Insightful Analysis: Gain detailed market insights covering major as well as emerging geographical regions, focusing on customer segments, government policies and socio-economic factors, consumer preferences, industry verticals, and other sub-segments.
  • Competitive Landscape: Understand the strategic maneuvers employed by key players globally to understand possible market penetration with the correct strategy.
  • Market Drivers & Future Trends: Explore the dynamic factors and pivotal market trends and how they will shape future market developments.
  • Actionable Recommendations: Utilize the insights to exercise strategic decisions to uncover new business streams and revenues in a dynamic environment.
  • Caters to a Wide Audience: Beneficial and cost-effective for startups, research institutions, consultants, SMEs, and large enterprises.

What do businesses use our reports for?

Industry and Market Insights, Opportunity Assessment, Product Demand Forecasting, Market Entry Strategy, Geographical Expansion, Capital Investment Decisions, Regulatory Framework & Implications, New Product Development, Competitive Intelligence

Report Coverage:

  • Historical data from 2022 to 2024 & forecast data from 2025 to 2030
  • Growth Opportunities, Challenges, Supply Chain Outlook, Regulatory Framework, and Trend Analysis
  • Competitive Positioning, Strategies, and Market Share Analysis
  • Revenue Growth and Forecast Assessment of segments and regions including countries
  • Company Profiling (Strategies, Products, Financial Information, and Key Developments among others.

Segmentation

By Product Type

  • Zener Diode
  • Schottky Diode
  • Rectifier Diode
  • Others

By Material

  • Silicon Carbide
  • Gallium Nitride
  • Others

By End-User

  • Automotive
  • Consumer Electronics
  • IT & Telecommunication
  • Aerospace & Defense
  • Others

By Geography

  • North America
  • USA
  • Canada
  • Mexico
  • South America
  • Brazil
  • Argentina
  • Others
  • Europe
  • Germany
  • France
  • United Kingdom
  • Italy
  • Others
  • Middle East and Africa
  • Saudi Arabia
  • UAE
  • Others
  • Asia Pacific
  • China
  • India
  • Japan
  • South Korea
  • Taiwan
  • Others

TABLE OF CONTENTS

1. EXECUTIVE SUMMARY

2. MARKET SNAPSHOT

  • 2.1. Market Overview
  • 2.2. Market Definition
  • 2.3. Scope of the Study
  • 2.4. Market Segmentation

3. BUSINESS LANDSCAPE

  • 3.1. Market Drivers
  • 3.2. Market Restraints
  • 3.3. Market Opportunities
  • 3.4. Porter's Five Forces Analysis
  • 3.5. Industry Value Chain Analysis
  • 3.6. Policies and Regulations
  • 3.7. Strategic Recommendations

4. TECHNOLOGICAL OUTLOOK

5. DISCRETE DIODES MARKET BY PRODUCT TYPE

  • 5.1. Introduction
  • 5.2. Zener Diode
  • 5.3. Schottky Diode
  • 5.4. Rectifier Diode
  • 5.5. Others

6. DISCRETE DIODES MARKET BY MATERIAL

  • 6.1. Introduction
  • 6.2. Silicon Carbide
  • 6.3. Galium Nitride
  • 6.4. Others

7. DISCRETE DIODES MARKET BY END-USER

  • 7.1. Introduction
  • 7.2. Automotive
  • 7.3. Consumer Electronics
  • 7.4. IT & Telecommunication
  • 7.5. Aerospace & Defense
  • 7.6. Others

8. DISCRETE DIODES MARKET BY GEOGRAPHY

  • 8.1. Introduction
  • 8.2. North America
    • 8.2.1. USA
    • 8.2.2. Canada
    • 8.2.3. Mexico
  • 8.3. South America
    • 8.3.1. Brazil
    • 8.3.2. Argentina
    • 8.3.3. Others
  • 8.4. Europe
    • 8.4.1. Germany
    • 8.4.2. France
    • 8.4.3. United Kingdom
    • 8.4.4. Italy
    • 8.4.5. Others
  • 8.5. Middle East and Africa
    • 8.5.1. Saudi Arabia
    • 8.5.2. UAE
    • 8.5.3. Others
  • 8.6. Asia Pacific
    • 8.6.1. China
    • 8.6.2. India
    • 8.6.3. Japan
    • 8.6.4. South Korea
    • 8.6.5. Taiwan
    • 8.6.6. Others

9. COMPETITIVE ENVIRONMENT AND ANALYSIS

  • 9.1. Major Players and Strategy Analysis
  • 9.2. Market Share Analysis
  • 9.3. Mergers, Acquisitions, Agreements, and Collaborations
  • 9.4. Competitive Dashboard

10. COMPANY PROFILES

  • 10.1. Diodes Incorporated
  • 10.2. Infineon Technologies AG
  • 10.3. Littelfuse Inc
  • 10.4. Microchip Technology
  • 10.5. NXP Semiconductors
  • 10.6. Onsemi
  • 10.7. ROHM Co Ltd
  • 10.8. Semikron
  • 10.9. STMicroelectronics
  • 10.10. Vishay Intertechnology Inc

11. APPENDIX

  • 11.1. Currency
  • 11.2. Assumptions
  • 11.3. Base and Forecast Years Timeline
  • 11.4. Key benefits for the stakeholders
  • 11.5. Research Methodology
  • 11.6. Abbreviations