市場調查報告書
商品編碼
1155436
High-k和CVD/ALD金屬前體全球市場規模、份額和行業趨勢分析報告:按技術(互連、電容器、門)、區域展望和預測2022-2028Global High-k And CVD ALD Metal Precursors Market Size, Share & Industry Trends Analysis Report By Technology (Interconnect, Capacitors, and Gates), By Regional Outlook and Forecast, 2022 - 2028 |
到 2028 年,用於High-k和 CVD/ALD 的金屬前驅體的全球市場規模預計將達到 7.4 億美元,在預測期內以 6.3% 的複合年增長率增長。。
ALD 是製造半導體器件的關鍵步驟,也是合成納米材料的武器工具。具有高介電常數的材料用於快速數據訪問和存儲。 ALD 除了能夠將薄膜厚度控制在埃級別外,即使對於具有大縱橫比的結構,ALD 也能夠實現出色的成膜效果。高介電常數材料薄膜,如 Al2O3、HfO2、Ta2O5、High-k柵極氧化物、用於 DRAM 的 ZrO2,以及用於電極和互連的氮化物,都是通過 ALD 工藝製造的。
ALD(原子層沉積)是用於製造薄膜的 CVD(化學氣相沉積)技術的一個子類別。 ALD 工藝共同註入前體,例如 Hf 和 Si,以形成多組分薄膜,從而形成單層均勻薄膜,用於各種應用,例如用於氣相沉積的 3D NAND、自對準圖案和 FinFET。
COVID-19 影響分析
這擾亂了High-k和 CVD/ALD 金屬前體的整個供應鏈。與此同時,High-k和 CVD/ALD 金屬前體業務將在當前的經濟衰退期間獲利,因為越來越多的組織尋求僱用遠程員工,而最終用戶在數字平台上消費更多材料。我預見到這樣做的機會。這推動了內存和存儲解決方案對於數據筆記本電腦和數據中心、小型且具有成本效益的封裝 IC 和其他半導體設備的重要性。放寬鎖定限制後,預計半導體設備組件製造商將改變其採購策略、生產計劃和行業動態以刺激增長。
市場增長因素
納米技術需求增加,應用範圍擴大
納米技術是能夠自我複制的指數級技術的代名詞。它還意味著一種生產方法,使製造商能夠以清潔、廉價和快速的方式生產商品。在醫學領域,已經開始生產具有定制分子大小的納米顆粒,以便將藥物直接輸送到受損細胞。這最大限度地減少了化學療法造成的損害,化學療法會殺死健康細胞。
近年來全球發展最快的半導體領域
人工智能、物聯網和 5G 等技術的出現極大地擴展了數據驅動解決方案的發展。為了基於這些技術構建尖端解決方案,許多公司都在研發活動中投入了大量精力。提供有效、複雜和智能解決方案的需求增加了對嵌入設備的 IC 的需求。
市場障礙
製造過程中的技術挑戰和復雜性
半導體製造需要衛生設施和設備。即使是少量的灰塵也會嚴重干擾製造過程並降低質量。由於製造錯誤造成的交貨延遲可能會導致訂單取消和額外損失。半導體製造容易受到機械缺陷、原材料缺陷和芯片級問題的影響。此外,製造高質量的半導體器件以及 IC(集成電路)需要創新和原創技術。
技術展望
High-k和 CVD/ALD 金屬前體市場按技術細分為互連、電容器和柵極。到 2021 年,柵極部分將在High-k和 CVD ALD 金屬前體市場中佔據重要的收入份額。已經對用於從High-k導電聚合物製造薄膜的 ALD 方法進行了重要研究。金屬柵極技術與High-k電介質的結合可□□以顯著降低厚度為 1 納米或更小的晶體管的柵極洩漏。
區域展望
按地區分析了北美、歐洲、亞太地區和 LAMEA 的High-k和 CVD/ALD 金屬前體市場。 2021 年,亞太地區在High-k和 ALD CVD 電介質金屬前驅體市場的收入份額最大。由於中國對電子產品的需求顯著增加以及電子設備製造持續外包給中國等因素,該地區預計在預測期內將顯著增長。
The Global High-k And CVD ALD Metal Precursors Market size is expected to reach $740.0 Million by 2028, rising at a market growth of 6.3% CAGR during the forecast period.
High-k is a substance with a high dielectric constant that has been the industry benchmark for the gate dielectric substrate of a device for a very long period of time, compared to silicon dioxide. Widespread usage of high-k dielectrics in the semiconductor production process has enabled the miniaturization of microelectronic components.
Both atomic layer deposition (ALD), as well as chemical vapor deposition (CVD) thin film deposition methods, utilize a chemical interaction between the material and the substrate to be deposited. Atomic layer deposition (ALD) is a thin-film deposition technology based on the successive usage of a form of chemical vapor deposition procedure employing two chemicals referred to as precursors or reactants that react with the material surface in a sequential, self-limiting manner.
ALD is a crucial step in the production of semiconductor devices and a tool in the arsenal for the synthesis of nanomaterials. The materials with high dielectric values are utilized for quick data access and storage. In addition to giving thickness control there at the Angstrom level, ALD enables excellent conformality of deposition in structures with large aspect ratios. Thin films made from high-k dielectric materials, like Al2O3, HfO2, Ta2O5, high-k gate oxides, ZrO2 for DRAM, and nitrides for electrodes and interconnects, are produced using the ALD process.
Atomic Layer Deposition (ALD) is a subcategory of the Chemical Vapor Deposition (CVD) technique, which is used to produce thin films. The ALD process is used to deposit multi-component thin films via co-injecting precursors, like Hf and Si, for the formation of a single-layer homogeneous film utilized in a variety of applications, including 3D NAND, self-aligned patterning, and FinFET.
COVID-19 Impact Analysis
This has disrupted the High-K and ALD CVD Metal Precursors market's overall supply chain. In contrast, the High-K and ALD CVD metal precursors business anticipates an opportunity to capitalize during the current economic downturn, as more organizations seek to employ remote workers and as end-users consume more material on digital platforms. This impacts the significance of memory and storage solutions for data laptops, centers, and other devices, such as small, cost-effective, high-powered packaged ICs and other semiconductor devices. After lockdown constraints are relaxed, it is estimated that semiconductor device component manufacturers would alter their sourcing strategy, production planning, and industry dynamics to drive growth.
Market Growth Factors
Rising Demand And Number Of Applications Of Nanotechnology
Nanotechnology is capable of self-replication, which is synonymous with exponential technology. It also signifies a production method, which means that manufacturers would be able to produce goods in a clean, inexpensive, and quick manner. In addition, in the field of Medicine, researchers have begun producing nanoparticles that are customized to the size of molecules in order to deliver medications directly to damaged cells. This strategy would minimize the damage caused by chemotherapy, which kills healthy cells in patients.
The Rapid Expansion Of The Semiconductor Sector All Over The World In Recent Years
As a result of the emergence of technologies such as artificial intelligence, the Internet of Things, and 5G, the development of data-driven solutions has expanded dramatically. Numerous businesses place a significant emphasis on research and development activities in order to build cutting-edge solutions based on such technology. There is an increase in demand for ICs to be embedded in devices as a result of the requirement to provide effective, sophisticated, and intelligent solutions.
Market Restraining Factors
Technical Challenges And Complexities In The Manufacturing Process
Manufacturing methods for semiconductors require hygienic facilities and equipment. Even a modest amount of dust can significantly hinder and degrade the process. Order cancellations and additional losses may result from delivery delays caused by production errors. Mechanical integrity difficulties, flaws in the raw materials, and chip-level problems typically impede the fabrication of semiconductors. Moreover, for the production of high-quality semiconductor devices along with integrated circuits (ICs), innovative and inventive techniques are necessary.
Technology Outlook
By Technology, the High-k And CVD ALD Metal Precursors Market is segregated into Interconnect, Capacitors, and Gates. In 2021, the gate segment garnered a substantial revenue share of the high-K and CVD ALD metal precursors market. Significant research has been done on the ALD approach for producing thin films from high-k dielectric conducting polymers. The combination of metal gate technologies and high-k dielectric allows a significant reduction in gate leakage for transistors with a thickness of one nanometer or less.
Regional Outlook
Region-Wise, the High-k And CVD ALD Metal Precursors Market is analyzed across North America, Europe, Asia-pacific, and LAMEA. In 2021, Asia-Pacific witnessed the largest revenue share of the high-K and ALD CVD dielectric metal precursors market. Due to factors such as China's significantly high demand for electronic items and continuing outsourcing of electronic device manufacture to China, it is anticipated that the region would grow significantly over the forecast duration.
The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include Air Liquide S.A, Air Product & Chemicals, Inc., The Dow Chemical Company, Linde PLC, Merck KGAA, Samsung Electronics Co., Ltd., Nanmat Technology Co. Ltd., Adeka Corporation, Strem Chemicals, Inc., and Colnatec.
Market Segments covered in the Report:
By Technology
By Geography
Companies Profiled
Unique Offerings from KBV Research
List of Figures