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市場調查報告書
商品編碼
1871230
汽車柵極驅動器IC市場機會、成長促進因素、產業趨勢分析及2025-2034年預測Automotive Gate Driver ICs Market Opportunity, Growth Drivers, Industry Trend Analysis, and Forecast 2025 - 2034 |
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2024 年全球汽車閘極驅動器 IC 市場價值為 14 億美元,預計到 2034 年將以 5.2% 的複合年成長率成長至 23 億美元。

汽車產業的快速電氣化仍然是推動閘極驅動積體電路需求的主要因素之一。隨著電動車在新生產線上佔據主導地位,對馬達、電池系統和逆變器的精確控制需求日益成長。閘極驅動積體電路是管理功率電晶體的關鍵組件,能夠提升效率、耐熱性和開關性能,這對最佳化電動車的續航里程和可靠性至關重要。對零排放交通和全球碳中和目標的推動加速了電動車的普及,導致高性能、高壓驅動積體電路的需求顯著增加了40%。汽車製造商和零件製造商正在整合先進的電力電子技術,以提高續航里程、減少能量損耗,並提供符合政府永續發展要求的快速充電系統。
| 市場範圍 | |
|---|---|
| 起始年份 | 2024 |
| 預測年份 | 2025-2034 |
| 起始值 | 14億美元 |
| 預測值 | 23億美元 |
| 複合年成長率 | 5.2% |
隨著碳化矽 (SiC) 和氮化鎵 (GaN) 半導體的應用,汽車產業正經歷一場重大的技術變革,徹底改變了電力電子裝置的設計方式。這些寬禁帶材料相比傳統矽材料,具有更高的能量效率、功率密度和更快的開關速度。隨著汽車製造商開發出更緊湊、更有效率的平台,專為 SiC 和 GaN 裝置最佳化的閘極驅動器對於下一代電動車架構而言變得至關重要。
2024年,隔離式閘極驅動器IC市場規模達到2.892億美元,主要得益於電動和混合動力車的日益普及,這些車輛對安全性和性能提出了更高的電氣隔離要求。這些IC能夠實現功率級和控制級之間的可靠通訊,同時還能處理高瞬態電壓,因此在牽引逆變器、先進動力總成和能量管理系統中不可或缺。
2024年,矽MOSFET(標準矽MOSFET)市場規模達4.726億美元。由於其成本效益高、供應鏈成熟且可靠性高,市場對這類積體電路的需求保持穩定。它們廣泛應用於低壓和中壓汽車應用,例如車載充電器、輔助電源系統和汽車電子產品。其與傳統設計的兼容性和穩定的性能使其成為汽車電氣系統的首選。
2024年美國汽車閘極驅動器IC市場規模將達到3.88億美元,預計2034年將以4.6%的複合年成長率成長。市場擴張的主要驅動力是聯邦政府大力推行清潔能源技術政策以及電動車製造業的快速發展。美國本土汽車製造商正大力投資創新電動車動力總成系統,從而帶動了對高效閘極驅動器IC的需求成長,這些IC需與高壓牽引和充電解決方案中使用的SiC和GaN功率模組相容。
全球汽車閘極驅動器IC市場的主要參與者包括NXP Semiconductors NV、三菱電機株式會社、英飛凌科技股份公司、瑞薩電子株式會社、Monolithic Power Systems (MPS)、Power Integrations Inc.、博通公司、Analog Devices, Inc.、德州儀器公司、義大利化學儀器公司、東芝電子導體(onsemi)、羅姆半導體、Diodes Incorporated、MACOM Technology Solutions Inc.、Microchip Technology Inc.、Semtech Corporation、Vishay Intertechnology, Inc.和Skyworks Solutions, Inc.。這些領先企業正致力於創新、產品差異化和技術合作,以鞏固其市場地位。各公司正大力投資開發針對SiC和GaN電晶體最佳化的IC,以提高電動車系統的效率、功率密度和熱管理性能。與汽車製造商和一級供應商的策略合作,正推動高壓IC更快地整合到牽引和充電系統中。
The Global Automotive Gate Driver ICs Market was valued at USD 1.4 Billion in 2024 and is estimated to grow at a CAGR of 5.2% to reach USD 2.3 Billion by 2034.

Rapid electrification across the automotive sector remains one of the main factors driving demand for gate driver ICs. As electric vehicles continue to dominate new production lines, the need for precise control of electric motors, battery systems, and inverters is growing. Gate driver ICs are fundamental components that manage power transistors, enhancing efficiency, heat resistance, and switching performance vital for optimizing electric vehicle range and reliability. The push for zero-emission transportation and global carbon-neutral goals has accelerated EV adoption, driving a significant 40% increase in demand for high-performance, high-voltage driver ICs. Automakers and component manufacturers are integrating advanced power electronics to improve range, reduce energy loss, and deliver faster charging systems that meet government sustainability mandates.
| Market Scope | |
|---|---|
| Start Year | 2024 |
| Forecast Year | 2025-2034 |
| Start Value | $1.4 Billion |
| Forecast Value | $2.3 Billion |
| CAGR | 5.2% |
The industry is undergoing a significant technological shift with the adoption of silicon carbide (SiC) and gallium nitride (GaN) semiconductors, transforming how power electronics are designed for vehicles. These wide-bandgap materials provide superior energy efficiency, greater power density, and faster switching speeds than traditional silicon. As automotive manufacturers develop more compact and high-efficiency platforms, gate drivers specifically optimized for SiC and GaN devices are becoming essential for next-generation EV architectures.
In 2024, the isolated gate driver ICs segment generated USD 289.2 million, supported by the growing use of electric and hybrid vehicles that demand strong electrical isolation for safety and performance. These ICs enable reliable communication between power and control stages while managing high transient voltages, making them indispensable in traction inverters, advanced powertrains, and energy management systems.
The silicon MOSFET (Standard Si MOSFET) segment generated USD 472.6 million in 2024. Demand for these ICs remains steady due to their cost efficiency, established supply chain, and high reliability. They are extensively utilized in low- and mid-voltage vehicle applications such as onboard chargers, auxiliary power systems, and automotive electronics. Their compatibility with conventional designs and consistent performance continues to make them a preferred option in automotive electrical systems.
United States Automotive Gate Driver ICs Market is USD 388 million in 2024, growing at a CAGR of 4.6% through 2034. Market expansion is driven by strong federal policies promoting clean energy technologies and the rapid growth of EV manufacturing. Domestic automakers are heavily investing in innovative EV powertrain systems, generating increased demand for efficient gate driver ICs compatible with SiC and GaN power modules used in high-voltage traction and charging solutions.
Prominent companies operating in the Global Automotive Gate Driver ICs Market include NXP Semiconductors N.V., Mitsubishi Electric Corporation, Infineon Technologies AG, Renesas Electronics Corporation, Monolithic Power Systems (MPS), Power Integrations Inc., Broadcom Inc., Analog Devices, Inc., Texas Instruments Incorporated, STMicroelectronics N.V., Toshiba Electronic Devices & Storage Corporation, ON Semiconductor Corporation (onsemi), ROHM Semiconductor, Diodes Incorporated, MACOM Technology Solutions Inc., Microchip Technology Inc., Semtech Corporation, Vishay Intertechnology, Inc., and Skyworks Solutions, Inc. Leading players in the Automotive Gate Driver ICs Market are focusing on innovation, product differentiation, and technology partnerships to reinforce their market position. Companies are investing heavily in the development of ICs optimized for SiC and GaN transistors to enhance efficiency, power density, and thermal management in EV systems. Strategic collaborations with automakers and Tier-1 suppliers are enabling faster integration of high-voltage ICs in traction and charging systems.